Matches 451 - 500 out of 838 < 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 >
Match Document Document Title
6853028 Non-volatile memory device having dummy pattern  
A non-volatile memory device includes a cell region and a peripheral circuit region at the semiconductor substrate. A plurality active regions are disposed in the cell region in parallel with each...
6853006 Silicon carbide semiconductor device  
A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending...
6849497 Method of fabricating a semiconductor integrated circuit including a capacitor formed on a single insulating substrate layer having lower boron dose in the vicinity of the surface thereof  
In the case where holes are defined in BPSG films, respectively, lower electrodes are formed of polysilicon inside the holes, respectively, a nitride film is formed on top of the respective lower...
6849885 Method of producing a semiconductor integrated circuit device and the semiconductor integrated circuit device  
An amount of a semiconductor substrate cut due to etching in the bottom of a contact hole formed by the SAC technique is reduced. Silicon oxide films are dry etched under the conditions of...
6847069 Thin-film semiconductor device, manufacturing method of the same and image display apparatus  
A thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by...
6847064 Semiconductor device having a thin film transistor  
A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first...
6844578 Semiconductor integrated circuit device and manufacturing method therefor  
In a semiconductor integrated circuit device in which the number of the PMOS transistors to be used is relatively larger than that of the NMOS transistors and the PMOS transistor is used as an...
6844602 Semiconductor device, and method for manufacturing the same  
The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center...
6844076 Silicon oxide based gate dielectric layer  
A semiconductor device having a dielectric layer formed between a first and a second conductive layer. The dielectric layer comprising a layer of silicon oxide SiO X≦2 , having a dielectric...
6844590 Semiconductor device with trench isolation between two regions having different gate insulating films  
The major surface of a semiconductor substrate of a semiconductor device includes first and second regions and a boundary area therebetween. A first gate insulating film and a first gate electrode...
6838731 Microwave transistor structure having step drain region  
A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first...
6835974 Three dimensional integrated circuits using sub-micron thin-film diodes  
This invention provides practical methods to fabricate sub-micron 3D integrated circuits using multiple layers of diodes manufactured on polycrystalline or amorphous semiconductor thin films. The...
6833562 Silicon carbide semiconductor device and its manufacturing method  
In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide...
6831350 Semiconductor structure with different lattice constant materials and method for forming the same  
A semiconductor structure includes a substrate comprising a first relaxed semiconductor material with a first lattice constant. A semiconductor device layer overlies the substrate, wherein the...
6831334 Semiconductor device having electrostatic protection circuit and method of fabricating the same  
A semiconductor device including an electrostatic protection circuit capable of preventing current from being concentrated in a hot spot through a silicide layer. A plurality of salicide N-type MOS...
6831327 Vertically structured power semiconductor component  
A vertically structured semiconductor power component is described. A layer thickness of a substrate of the power module between a pn junction and a metallized back is chosen in such a manner that...
6828581 Selective electroless attachment of contacts to electrochemically-active molecules  
A solution-based method for attaching metal contacts to molecular films is described. The metal contacts are attached to functional groups on individual molecules in the molecular film. The...
6828605 Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component  
A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type....
6825515 Ferroelectric capacitor with electrode formed in separate oxidizing conditions  
A method of fabricating a ferroelectric capacitor comprises the steps of forming an upper electrode on a ferroelectric film formed on a lower electrode by a sputtering process of a conductive oxide...
6818939 Vertical compound semiconductor field effect transistor structure  
In one embodiment, a compound semiconductor vertical FET device ( 11 ) includes a first trench ( 29 ) formed in a body of semiconductor material ( 13 ), and a second trench ( 34 ) formed within the...
6818932 Semiconductor device with improved soft error resistance  
There is provided a semiconductor device including a transistor formed by means of a common contact hole that connects a gate electrode, and a diffused layer forming a source/drain terminal; and a...
6815740 Gate feed structure for reduced size field effect transistors  
A FET or BJT structure or distributed transistor amplifier having a tapered gate feed line and a tapered channel width (tapered source fingers, tapered drain fingers) provides increased bandwidth...
6815297 Ultra-thin fully depleted SOI device and method of fabrication  
A fully depleted SOI FET and methods of formation are disclosed. The FET includes a layer of semiconductor material disposed over an insulating layer, the insulating layer disposed over a...
6815765 Semiconductor device with function of modulating gain coefficient and semiconductor integrated circuit including the same  
A semiconductor device has a structure in which an impurity diffusion region with an impurity concentration lower than an impurity concentration of a source and a drain is formed between the source...
6812534 Static semiconductor memory device  
An SRAM comprises a memory cell including first and second access nMOS transistors, first and second driver nMOS transistors and first and second load pMOS transistors, polysilicon wires forming...
6812489 Liquid crystal display  
A semiconductor element suitable for use in the display region of a liquid crystal display or for use in the drive circuit region for driving the display region is comprised of first, second, third...
6812515 Polysilicon layers structure and method of forming same  
A non-volatile memory cell includes a first insulating layer over a substrate region, and a floating gate. The floating gate includes a first polysilicon layer over the first insulating layer and a...
6812535 Semiconductor device with a disposable gate and method of manufacturing the same  
A method of manufacturing a semiconductor device, includes the steps of forming a disposable gate on a semiconductor substrate in a region where a gate electrode is to be formed, forming a sidewall...
6812536 MOSFET with graded gate oxide layer  
A smile oxide film, serving as a gate oxide film, is formed under a three-layer poly-metal gate consisting of a doped polysilicon layer, a tungsten layer, and a SiON layer. The smile oxide film has...
6809402 Reflowable-doped HDP film  
Device leakage due to spacer undercutting is remedied by depositing a B-doped HDP or a BP-doped HDP oxide gap filling layer capable of flowing into undercut regions. Embodiments include depositing...
6806520 Method of making transistors  
A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at...
6803636 Semiconductor device having silicide films  
A semiconductor device capable of easily setting the sheet resistance of a resistive element or the like to an arbitrary value is obtained. This semiconductor device comprises a first silicide film...
6798000 Field effect transistor  
A field-effect transistor that having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or...
6794720 Dynamic threshold voltage metal insulator field effect transistor  
In a semiconductor device in which the gate electrode of a MISFET formed on a semiconductor substrate is electrically connected to a well region under the channel of the MISFET, the MISFET is...
6791154 Integrated semiconductor circuit device having Schottky barrier diode  
An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single...
6787859 Semiconductor memory device with shortened connection length among memory block, data buffer and data bus  
There is provided a semiconductor memory device including eight memory blocks 20 a to 20 h , first data bus 22 a , and second data bus 22 b . The eight memory blocks are arranged at respective...
6787827 Semiconductor device and method for manufacturing the same  
A method of manufacturing a semiconductor device comprising the steps of forming a dummy film and a dummy gate pattern at a predetermined gate-forming region on a semiconductor substrate, forming a...
6784485 Diffusion barrier layer and semiconductor device containing same  
A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion...
6784487 Monolithcally integrated semiconductor component  
The invention concerns a monolithically integrated semiconductor component, having a first charge carrier region of a first charge carrier doping; at least two second charge carrier regions with...
6784471 Semiconductor device and manufacturing method thereof  
A semiconductor device capable of reducing manufacturing cost and on-state resistance is provided by selectively disposing a plurality of active regions (AR) on a main surface of a stainless steel...
6784472 Semiconductor device and method for fabricating the same  
A semiconductor device comprises a first transistor 38 a having a first gate electrode 22 ; a second transistor 38 b having a second gate electrode 34 which is different from the first gate...
6780691 Method to fabricate elevated source/drain transistor with large area for silicidation  
A method for forming a transistor having an elevated source/drain structure is described. A gate electrode is formed overlying a substrate and isolated from the substrate by a gate dielectric...
6781168 Semiconductor device  
A source region ( 2 ) and a drain region ( 3 ) both containing n-type impurities are formed on a p-type Si semiconductor substrate ( 1 ) containing p-type impurities. On an active region of the...
6781206 Semiconductor device with structure restricting flow of unnecessary current therein  
Isolation regions, a peripheral anode, an N-type island region for output and a passive N-type island region are formed at the main surface of a P − substrate. A dummy N-type island region is...
6777734 Structure of SRAM having asymmetric silicide layer  
The present invention relates to a structure of a static random access memory (SRAM) having an asymmetric silicide layer and a method for manufacturing the same. The method for manufacturing a...
6777279 Semiconductor integrated circuit device and manufacturing method thereof  
Disclosed are a semiconductor integrated circuit device and a method of manufacturing the same capable of realizing the two-level gate insulator process for the DRAM without increasing the number...
6777725 NROM memory circuit with recessed bitline  
An integrated memory circuit of the type of an NROM memory includes recessed bit lines formed of a material having a low ohmic resistance. By recessing the bit lines with respect to the...
6777728 Semiconductor device and complementary semiconductor device  
A semiconductor device includes a channel layer, a gate electrode formed on the channel layer, a p-type source region formed on a first side of the channel layer, and a p-type drain region formed...
6777293 DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure  
A double diffused MOS (DMOS) transistor structure is provided that uses a trench trough suitable for high-density integration with mixed signal analog and digital circuit applications. The DMOS...
6773972 Memory cell with transistors having relatively high threshold voltages in response to selective gate doping  
A method of forming a semiconductor circuit ( 20 ). The method forms a first transistor (NT 1 ) using various steps, such as by forming a first source/drain region ( 36 1 ) as a first doped region...
Matches 451 - 500 out of 838 < 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 >