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7633135 Bottom anode Schottky diode structure and method  
This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further...
7612394 Thin film transistor array substrate  
A thin film transistor array (TFT) substrate and a method for manufacturing the same are provided. The manufacturing method needs only or even less than six mask processes for manufacturing the TFT...
7608907 LDMOS gate controlled schottky diode  
An improved diode is disclosed. The diode comprises a Schottky diode and a LDMOS device coupled in series with the Schottky diode. In a preferred embodiment, a forward current from the Schottky...
7598548 Semiconductor device and field-effect transistor  
A Schottky electrode including a WNx layer on an n-type GaN layer. A crystal plane of the n-type GaN layer is in contact with a crystal plane of the WNx layer. The crystal plane of the n-type GaN...
7547932 Vertical gate-depleted single electron transistor  
A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated...
7510921 Self-aligned silicon carbide semiconductor devices and methods of making the same  
A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by...
7485514 Method for fabricating a MESFET  
A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of...
7468551 Multiple chips bonded to packaging structure with low noise and multiple selectable functions  
A chip package for semiconductor chips is provided by the method of forming a chip package includes the steps of forming a printed circuit board with a window therethrough; forming semiconductor...
7456444 Field effect transistor  
A field effect transistor according to an embodiment of the invention includes: a semiconductor substrate; a channel layer of a first conductivity type formed on the semiconductor substrate; and a...
7453107 Method for applying a stress layer to a semiconductor device and device formed therefrom  
A semiconductor device includes a substrate of semiconductor material. A source region, a drain region, and a conducting region of the semiconductor device are formed in the substrate and doped...
7411226 High electron mobility transistor (HEMT) structure with refractory gate metal  
An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction...
7394112 Heterostructure with rear-face donor doping  
The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping...
7345350 Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias  
A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole...
7332754 Semiconductor switch  
In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET,...
7326962 Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same  
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between...
7307298 Semiconductor device  
The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element...
7297580 Methods of fabricating transistors having buried p-type layers beneath the source region  
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between...
7294900 Compound semiconductor device and manufacturing method thereof  
A pad electrode of a field effect transistor is formed solely of a pad metal layer without providing a gate metal layer. A high concentration impurity region is provided below the pad electrode,...
7250666 Schottky barrier diode and method of forming a Schottky barrier diode  
Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using...
7242040 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors  
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as...
7208785 Self-aligned Schottky-barrier clamped planar DMOS transistor structure and its manufacturing methods  
The self-aligned Schottky-barrier clamped planar DMOS transistor structure comprises a self-aligned source region being surrounded by a planar gate region. The self-aligned source region comprises...
7199408 Semiconductor multilayer structure, semiconductor device and HEMT device  
A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on a substrate, and a group of stacked semiconductor layers including a first...
7193255 Semiconductor device with floating conducting region placed between device elements  
Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to...
7141861 Semiconductor device and manufacturing method there  
A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR...
7141464 Method of fabricating T-type gate  
Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a...
7132703 Field-effect transistor  
A field-effect transistor includes: a carrier supply layer supplying carriers; a Schottky contact layer forming a Schottky barrier; and an intermediate layer formed between the carrier supply layer...
7105907 Gallium nitride compound semiconductor device having schottky contact  
A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type...
7084475 Lateral conduction Schottky diode with plural mesas  
A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and...
7071498 Gallium nitride material devices including an electrode-defining layer and methods of forming the same  
Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in...
7071499 Heterojunction field effect type semiconductor device having high gate turn-on voltage and low on-resistance and its manufacturing method  
In a heterojunction field effect type semiconductor device, a channel layer is formed over a GaAs substrate, and a first semiconductor layer including no aluminum is formed over the channel layer....
7012285 Semiconductor device  
A semiconductor device whose insertion loss is reduced and isolation characteristics are improved in a high frequency band by reducing the capacitance component when an FET is off is provided. FETs...
7005688 Semiconductor device with impurity layer to prevent depletion layer expansion  
A semiconductor switching device includes a plurality of metal layers. At least one of the metal layers forming a Schottky junction with a semi-insulating substrate or an insulating layer on a...
6995396 Semiconductor substrate, semiconductor device and method for fabricating the same  
A SiC bulk substrate whose top face has been flattened is placed in a vertical thin film growth system to be annealed in an inert gas atmosphere. A material gas of Si is then supplied at a flow...
6972440 Enhanced T-gate structure for modulation doped field effect transistors  
A structure and a method are disclosed of an enhanced T-gate for modulation doped field effect transistors (MODFETs). The enhanced T-gate has insulator spacer layers sandwiching the neck portion of...
6967360 Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof  
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs...
6956239 Transistors having buried p-type layers beneath the source region  
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between...
6943386 Pseudomorphic high electron mobility field effect transistor with high device linearity  
New pseudomorphic high electron mobility transistors (pHEMT's) with extremely high device linearity having an n + /p + /n camel-gate heterostructure and δ-doped sheet structure is disclosed. For...
6929987 Microelectronic device fabrication method  
In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so...
6876034 Semiconductor device having active grooves  
A semiconductor device having grooves uniformly filled with semiconductor fillers is provided. Both ends of each of narrow active grooves are connected to an inner circumferential groove...
6833571 Transistor device including buried source  
A transistor device includes a gate region disposed adjacent to a semiconductor substrate such that a low impedance channel is formed between a source region and drain region of a transistor device...
6815741 III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal  
By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the...
6800878 Field-effect type compound semiconductor device and method for fabricating the same  
At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the...
6791154 Integrated semiconductor circuit device having Schottky barrier diode  
An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single...
6787826 Heterostructure field effect transistor  
A high electron mobility transistor is constructed with a substrate, a lattice-matching buffer layer formed on the substrate, and a heavily doped p-type barrier layer formed on the buffer layer. A...
6770902 Charge carrier extracting transistor  
An extracting transistor ( 10 )—an FET—includes a conducting channel extending via a p-type InSb quantum well ( 22 ) between p-type InAlSb layers ( 20, 24 ) of wider band-gap. One of the InAlSb...
6768146 III-V nitride semiconductor device, and protection element and power conversion apparatus using the same  
A GaN-based Schottky diode includes a sapphire substrate on which are formed a GaN buffer layer, an n + -type GaN layer, and an n-type GaN layer that has a surface portion thereof shaped to form a...
6768143 Structure and method of making three finger folded field effect transistors having shared junctions  
An integrated circuit including a field effect transistor (FET) is provided in which the gate conducter has an even number of fingers disposed between alternating source and drain regions of a...
6717192 Schottky gate field effect transistor  
A Schottky gate FET including a gate electrode having a gate extension, a drain electrode and a drain contact layer overlying a semi-insulating substrate, wherein the gate extension overlies at...
6703678 Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss  
A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, where the thickness of the dielectric layer between the...
6686616 Silicon carbide metal-semiconductor field effect transistors  
SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects...
Matches 1 - 50 out of 379 1 2 3 4 5 6 7 8 >