Matches 1 - 50 out of 114 1 2 3 >
Match Document Document Title
7598836 Multilayer winding inductor  
A multilayer winding inductor. The inductor at least includes multi-level interconnect and single-level interconnect structures. The multi-level interconnect structure includes a plurality of...
7587193 Signal transmission arrangement having a transformer and a receiver circuit  
A signal transmission arrangement includes a transformer and a receiver circuit. The transformer has at least one primary winding and at least one secondary winding, each having first and second...
7569908 Semiconductor device and method of manufacturing the same  
A semiconductor device including inductors with improved reliability and a method of manufacturing the same are provided. The semiconductor device may include a substrate, an insulating film...
7498656 Electromagnetic shielding structure  
An improved electromagnetic shielding structure has been discovered. In one embodiment of the invention, an apparatus includes an inductor and an electrically conductive enclosure that...
7485915 Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element  
A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first...
7470927 Semiconductor chip with coil element over passivation layer  
A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing...
7456459 Design of low inductance embedded capacitor layer connections  
The present invention discloses capacitors having via connections and electrodes designed such that they provide a low inductance path, thus reducing needed capacitance, while enabling the use of...
7391067 Hybrid microwave integrated circuit  
An integrated microwave transistor amplifier includes a AlGaN/GaN active transistor arrangement on a thinned Si 1-mil heat spreader. Elongated, plated-through vias extend from the source portions...
7378328 Method of fabricating memory device utilizing carbon nanotubes  
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a...
7375376 Semiconductor display device and method of manufacturing the same  
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
7348656 Power semiconductor device with integrated passive component  
A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof.
7342266 Field effect transistors with dielectric source drain halo regions and reduced miller capacitance  
A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device...
7335992 Semiconductor apparatus with improved yield  
The semiconductor apparatus includes a pad; a first line layer placed immediately beneath the pad; and a lattice-shaped contact being between the pad and the first line layer.
7312524 Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made  
A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced...
7264986 Microelectronic assembly and method for forming the same  
According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first and second trenches on a semiconductor substrate,...
7247542 Fabrication method of spiral inductor on porous glass substrate  
The present invention discloses a fabrication method and structure of spiral RF inductor on porous glass substrate. Thick porous silicon layer is natively formed on a silicon wafer by anodic...
7199415 Conductive container structures having a dielectric cap  
Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of...
7112835 Semiconductor device including a capacitance  
It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate ( 165 ), a buried oxide film ( 166 ) and an SOI...
7109531 High frequency switch, two-band type high frequency switch, three-band type high frequency switch, and mobile communication equipment  
A high frequency switch, has a transmitting terminal, a receiving terminal, an antenna terminal, a first diode having an anode electrically connected to the transmitting terminal and a cathode...
7105884 Memory circuitry with plurality of capacitors received within an insulative layer well  
A method of forming memory circuitry having a memory array having a plurality of memory capacitors and having peripheral memory circuitry operatively configured to write to and read from the memory...
7084481 Symmetric inducting device for an integrated circuit having a ground shield  
The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a...
7064363 Symmetric inducting device for an integrated circuit having a ground shield  
The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a...
6982472 Semiconductor device and capacitor  
A semiconductor device comprises a semiconductor substrate and a capacitor provided above the semiconductor substrate, the capacitor comprises a lower electrode containing metal, a dielectric film...
6946717 High voltage semiconductor device  
A compound semiconductor device is comprising a compound semiconductor substrate ( 219 ) having a ground plane ( 205 ); an active element ( 201 ) disposed on the substrate; a passive element ( 211...
6930334 High frequency semiconductor device  
A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering...
6876076 Multilayer semiconductor device for transmitting microwave signals and associated methods  
A multilayer semiconductor device includes at least one structure for transmitting electrical signals, and in particular, microwave signals. The device includes at least one electrically conductive...
6867475 Semiconductor device with an inductive element  
There is provided a semiconductor device able to prevent performance degradation of an inductor element provided thereon. A high resistance region is provided below the inductor element formed on...
6841847 3-D spiral stacked inductor on semiconductor material  
A 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the...
6835968 High frequency switch, two-band type high frequency switch, three-band type high frequency switch, and mobile communication equipment  
A high frequency switch, has a transmitting terminal; a receiving terminal; an antenna terminal; a first diode having an anode electrically connected to the transmitting terminal and a cathode...
6830970 Inductance and via forming in a monolithic circuit  
A method for manufacturing, in a monolithic circuit including a substrate, an inductance and a through via, including the step of forming, from a first surface of the substrate, at least one trench...
6759744 Electronic circuit unit suitable for miniaturization  
The electronic circuit unit of the present invention includes first and second insulating substrates on respective surfaces of which wiring patterns are formed, and thick-film passive elements...
6737687 Field-effect transistor device having a uniquely arranged gate electrode  
A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area,...
6734531 Use of selective oxidation conditions for dielectric conditioning  
A method for conditioning or repairing a dielectric structure of a semiconductor device structure with selectivity over an adjacent conductive or semiconductive structure of the semiconductor...
6720639 Integrated inductance structure  
An integrated circuit inductance structure, including a silicon substrate, a planar winding of a conductive track, a resistive layer, not etched under the winding, a dielectric layer between the...
6710426 Semiconductor device and transceiver apparatus  
A field effect transistor (FET) is formed on a semiconductor substrate. A drain terminal, a source terminal, and a gate terminal connected to the FET are also formed on the semiconductor substrate....
6682982 Process method for 1T-SRAM  
A method of forming a cell memory structure including the step of planarizing an HDP/LDP oxide layer lying over a capacitor area. The method provides for the planarization of the cell storage node,...
6670657 Integrated circuit having photodiode device and associated fabrication process  
An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench...
6664581 Damascene capacitor having a recessed plate  
A damascene capacitor structure includes a recessed capacitor plate for preventing leakage and dielectric breakdown between the capacitor plates of the capacitor structure on the surface of the...
6646321 Power transistor with internally combined low-pass and band-pass matching stages  
RF power transistor provided with an internal shunt inductor, characterized in that the shunt is produced in two separated, capacitors (Cb, Cp), each internally bonded to the transistor internal...
6630700 NMOS circuit in isolated wells that are connected by a bias stack having pluralirty of diode elements  
An integrated NMOS circuit including an active stack having a plurality of isolated p-well active devices M 1 -M 3 , a bias stack having a plurality of diode-connected isolated p-well bias devices...
6621141 Out-of-plane microcoil with ground-plane structure  
Patterned ground planes are formed between out-of-plane microcoil structures and underlying integrated circuits (ICs). Each out-of-plane coil includes a series of loops extending from base...
6600181 Semiconductor integrated circuit and designing method thereof  
A semiconductor integrated circuit has a semiconductor internal circuit having a first power supply line and a second power supply line, wiring layers connected to a plurality of terminals of a...
6580146 Inductive structure integrated on a semiconductor substrate  
An inductive structure integrated in a semiconductor substrate, comprising at least a conductive element insulated from the substrate, comprising an insulating structure, which is formed inside...
6563192 Semiconductor die with integral decoupling capacitor  
A gateway or circuit barrier capacitor incorporated in a semiconductor die structure in lieu of a discrete capacitor employed with such a die in a Chip on Board assembly such as a single in-line...
6555893 Bar circuit for an integrated circuit  
The present invention provides a bar circuit for reducing cross talk and eddy current of an integrated circuit. The bar circuit comprises a semiconductor substrate with a first conductivity type; a...
6555435 Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids  
A method to form contacts in an integrated circuit device comprising to eliminate shorting between adjacent contacts due to dielectric layer voids is achieved. A substrate is provided. Narrowly...
6534794 Semiconductor light-emitting unit, optical apparatus and optical disk system having heat sinking means and a heating element incorporated with the mounting system  
A semiconductor light-emitting unit includes: a semiconductor laser diode; a photodetector functioning as a sub-mount for mounting the diode thereon; and a heating member, incorporated with the...
6528859 Foil wound low profile L-C power processor  
The present invention provides a foil wound low profile power L-C processor. A magnetic winding is disposed within a core. The magnetic winding can be made of one or more sets of conductive foil...
6492707 Semiconductor integrated circuit device with pad impedance adjustment mechanism  
A semiconductor integrated circuit device, which enables impedance adjustment of a particular pad without affecting other pads or signal wirings or without the need for a design change in basic...
6486002 Tape design to reduce warpage  
An improved tape substrate design for a semiconductor package is disclosed. The tape substrate semiconductor package includes a plurality of die pads, a plurality of vias, and a pattern of metal...
Matches 1 - 50 out of 114 1 2 3 >