Patents in Class 257/270

Matches 1 - 50 out of 141

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Match	Document	Document Title
1	7615809	Junction field effect transistor and method of manufacturing the same According to a junction FET of the present invention, the depth of a channel region is made shallow by selectively performing ion implantation and diffusion. Since the channel region forms a pn...
2	7605412	Distributed high voltage JFET A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping...
3	7569874	Device and method of manufacture for a low noise junction field effect transistor A microelectronic product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a...
4	7557393	JFET with built in back gate in either SOI or bulk silicon A Junction Field-Effect transistor with no surface contact for the back gate and twice as much transconductance in the channel and with a higher switching speed is achieved by intentionally...
5	7525136	JFET device with virtual source and drain link regions and method of fabrication A junction field effect transistor comprises a semiconductor substrate. A source region of a first conductivity type is formed in the substrate. A drain region of the first conductivity type is...
6	7504677	Multi-gate enhancement mode RF switch and bias arrangement Methods and apparatus are provided for RF switches ( 100, 200 ). In a preferred embodiment, the apparatus comprises one or more multi-gate n-channel enhancement mode FET transistors ( 50, 112, 114...
7	7442590	Method for forming a semiconductor device having a fin and structure thereof A method for forming a semiconductor device includes providing a semiconductor layer, forming a passivation layer over the semiconductor layer, wherein the passivation layer has an opening having...
8	7420232	Lateral junction field effect transistor and method of manufacturing the same A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the...
9	7417270	Distributed high voltage JFET A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping...
10	7385249	Transistor structure and integrated circuit A process for forming a conductive gate structure for a sub-0.25 MOSFET technology, has been developed. The process features a conductive gate structure defined from a composite polysilicon or...
11	7376403	Terahertz radiation mixer A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel...
12	7312486	Stripe board dummy metal for reducing coupling capacitance Dishing is known to be a problem after CMP of dielectric layers in which the distribution of embedded metal is non-uniform. This problem has been solved by populating those areas where the density...
13	7274053	Fin device with capacitor integrated under gate electrode A fin-type field effect transistor (FinFET) has a fin having a center channel portion, end portions comprising source and drain regions, and channel extensions extending from sidewalls of the...
14	7262447	Metal oxide silicon transistor and semiconductor apparatus having high λ and β performances A semiconductor apparatus includes a MOS transistor having a semiconductor substrate providing as a channel region between a source and a drain. A gate electrode is formed on the semiconductor...
15	7214576	Manufacturing method of semiconductor device A manufacturing method of a semiconductor device disclosed herein comprises: forming a first protrusion; forming a second protrusion which is higher than the first protrusion; forming a first...
16	7161197	RF switching circuit for use in mobile communication systems An RF switching circuit according to the present invention includes: a plurality of input/output terminals for inputting and outputting an RF signal; and a switch for opening and closing an...
17	7115921	Nano-scaled gate structure with self-interconnect capabilities Gate conductors on an integrated circuit are formed with enlarged upper portions which are utilized to electrically connect the gate conductors with other devices. A semiconductor device comprises...
18	7109516	Strained-semiconductor-on-insulator finFET device structures The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
19	7091130	Method of forming a nanocluster charge storage device A plurality of memory cell devices is formed by using an intermediate dual polysilicon-nitride control electrode stack overlying nanoclusters. The stack includes a first-formed polysilicon-nitride...
20	7075132	Programmable junction field effect transistor and method for programming the same A programmable junction field effect transistor (JFET) with multiple independent gate inputs. A drain, source and a plurality of gate regions for controlling a conductive channel between the source...
21	7061055	Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal...
22	7015550	Nonvolatile semiconductor memory device A memory cell and a selection transistor for selecting the memory cell are provided. The memory cell includes a floating gate formed on a semiconductor substrate via a first gate insulation film, a...
23	6946374	Methods of manufacturing flash memory semiconductor devices A manufacturing method for fabricating flash memory semiconductor devices is disclosed. According to one example, the manufacturing method may include: forming a trench on a silicon substrate by...
24	6894337	System and method for forming stacked fin structure using metal-induced-crystallization A method facilitates the formation of a stacked fin structure for a semiconductor device that includes a substrate. The method includes forming one or more oxide layers on the substrate and forming...
25	6888182	Thin film transistor, method for manufacturing same, and liquid crystal display device using same A thin film transistor of the present invention is provided with (i) a plurality of divided channel regions formed under a gate electrode, and (ii) divided source regions and divided drain regions...
26	6855989	Damascene finfet gate with selective metal interdiffusion A fin field effect transistor includes a fin, a source region, a drain region, a first gate electrode and a second gate electrode. The fin includes a channel. The source region is formed adjacent a...
27	6853020	Double-gate semiconductor device A double-gate semiconductor device includes a substrate, an insulating layer, a fin and two gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. A...
28	6838735	Trench FET with non overlapping poly and remote contact therefor A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with conductive polysilicon. Spaced narrow polysilicon strips...
29	6831310	Integrated circuit having multiple memory types and method of formation A transistor ( 10 ) is formed having three separately controllable gates ( 44, 42, 18 ). The three gate regions may be electrically biased differently and the gate regions may have different...
30	6806805	Low loss high Q inductor A high Q inductive clement with low losses, high inductance and high efficiency is disclosed. The high Q inductive element with one or more inductive loops is formed over a silicon micro structure...
31	6762448	FinFET device with multiple fin structures A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide...
32	6750487	Dual double gate transistor The present invention provides a dual gate transistor and a method for forming the same that results in improved device performance and density. The present invention uses a double gate design to...
33	6693314	Junction field-effect transistor with more highly doped connecting region A junction field-effect transistor containing a semiconductor region with an inner region is described. In addition, a first and a second connecting region, respectively, are disposed within the...
34	6627973	Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device A method of eliminating voids in the interlayer dielectric material of 0.18-μm flash memory semiconductor devices and a semiconductor device formed by the method. The present invention provides a...
35	6344379	Semiconductor device with an undulating base region and method therefor A transistor ( 30 ) uses a single continuous base region ( 40 ) with an undulating structure. The semiconductor device is an insulated gate field effect transistor having a semiconductor substrate...
36	6339024	Reinforced integrated circuits A method of manufacturing integrated circuits wherein a conductive structure in a topmost semiconductive layer of an integrated circuit is provided having a thickness greater than or equal to 1.5...
37	6188111	Dual gate semiconductor device for shortening channel length In a semiconductor device including a MOSFET, a first semiconductor layer is formed over a silicon substrate and has a gate region. Further, a second semiconductor layer is formed over the first...
38	6020608	Junction-type field-effect transistor with improved impact-ionization resistance Junction-type field-effect transistors are disclosed exhibiting improved resistance to impact ionization. A p-type gate region is formed above an n-type channel region between an n-type drain...
39	6020607	Semiconductor device having junction field effect transistors An N - type epitaxial layer is formed on a P type semiconductor substrate, and a P + type insulative isolating layer is so formed as to reach the semiconductor substrate from the surface of the...
40	6005267	MES/MIS FET with split-gate RF input Disclosed is an improved field effect transistor (FET) employing both a metal-semiconductor (MES) gate and a metal-insulator-semiconductor (MIS) gate, which FET is particularly useful to provide...
41	5990504	Finger structured MOSFET A boundary of a well 102 of a finger structured MOSFET is positioned between an element region 104 and a gate contact 108. With this geometry, it is feasible to reduce the well and attain a...
42	5945699	Reduce width, differentially doped vertical JFET device A load device for an MOS transistor, such as that of a memory cell, includes a differentially doped vertical JFET structure that contains two separate and distinct opposite conductivity type...
43	5920085	Multiple floating gate field effect transistors and methods of operating same A field effect transistor includes laterally spaced apart source and drain regions in a substrate, laterally spaced apart undoped regions in the substrate between the laterally spaced apart source...
44	5834802	Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages A comb-shape MESFET assembly has a plurality of unit FETs including first, second and third groups of unit FETs. The pinch-off voltages of the unit FETs are different from group to group by a step...
45	5831303	Field effect transistor utilizing the gate structure two-dimensionally The object of the invention is a field-effect transistor comprising a drain (D) and a source (S) and a gate (G) with a determined width (W) and length (L), equipped with means (G1-G2) for...
46	5818070	Electro-optical device incorporating a peripheral dual gate electrode TFT driver circuit A thin file transistor (TPT) has first (lower) and second (upper) gate electrodes which are provide respectively above and under a semiconductor active layer and first and second insulating films...
47	5811831	Semiconductor device exploiting a quantum interference effect A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a semiconductor body; n-1 (n≥3) rods of forbidden regions extending along one direction, the...
48	5804848	Field effect transistor having multiple gate electrodes surrounding the channel region A field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source and drain regions and gate electrodes disposed to at...
49	5793058	Multi-gate offset source and drain field effect transistors and methods of operating same A field effect transistor includes laterally spaced apart source and drain regions in a substrate, laterally spaced apart undoped regions in the substrate between the laterally spaced apart source...
50	5789791	Multi-finger MOS transistor with reduced gate resistance The gate resistance of a high-frequency multi-finger MOS transistor is reduced by shorting together the ends of each of the gates by utilizing gate contacts, metal regions, vias, and a metal layer....

Matches 1 - 50 out of 141

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