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9040957 Field effect transistor using graphene  
According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode...
8994003 Power-insulated-gate field-effect transistor  
To provide a power MISFET using oxide semiconductor. A gate electrode, a source electrode, and a drain electrode are formed so as to interpose a semiconductor layer therebetween, and a region of...
8975095 Integrated nanowire/nanosheet nanogap and nanopore for DNA and RNA sequencing  
A technique is provided for base recognition in an integrated device is provided. A target molecule is driven into a nanopore of the integrated device. The integrated device includes a nanowire...
8962442 Janus complementary MEMS transistors and circuits  
A method of fabricating an electromechanical device includes the following steps. A first and a second back gate are formed over a substrate. An etch stop layer is formed covering the first and...
8962062 Methods of manufacturing end effectors for energy-based surgical instruments  
A method of manufacturing an end effector for a surgical instrument includes providing a substrate wherein at least an outer periphery of the substrate is formed from an electrically-insulative...
8957405 Graphene field effect transistor  
Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed...
8932919 Vertical stacking of graphene in a field-effect transistor  
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene...
8916851 Graphene-based device and methods of forming the same  
A graphene-based device can be characterized as including a first electrode comprising graphene, a second electrode comprising graphene, and a potential barrier. The first electrode is physically...
8912530 Electrode structure including graphene and field effect transistor having the same  
According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET)...
8901666 Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures  
A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching...
8890121 Integrated nanowire/nanosheet nanogap and nanopore for DNA and RNA sequencing  
A technique is provided for base recognition in an integrated device is provided. A target molecule is driven into a nanopore of the integrated device. The integrated device includes a nanowire...
8890118 Tunnel field effect transistor  
The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to the fabrication of a tunnel field effect transistor having an improved on-current...
8890120 Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs  
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET)...
8884345 Graphene electronic device and method of fabricating the same  
The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide,...
8872161 Integrate circuit with nanowires  
The present disclosure provides an integrated circuit (IC). The IC includes a substrate having a metal-oxide-semiconductor (MOS) region. The IC further includes first gate, source and drain...
8859316 Schottky junction si nanowire field-effect bio-sensor/molecule detector  
A Schottky junction silicon nanowire field-effect biosensor/molecule detector with a nanowire thickness of 10 nanometer or less and an aligned source/drain workfunction for increased sensitivity....
8853666 Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor  
In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a...
8853674 Tunneling field effect transistor structure and method for forming the same  
A tunneling field effect transistor structure and a method for forming the same are provided. The tunneling field effect transistor structure comprises: a substrate; a plurality of convex...
8847205 Spacer for a gate electrode having tensile stress and a method of forming the same  
By reducing a deposition rate and maintaining a low bias power in a plasma atmosphere, a spacer layer, for example a silicon nitride layer, may be deposited that exhibits tensile stress. The...
8809837 Vertical stacking of graphene in a field-effect transistor  
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene...
8803131 Metal-free integrated circuits comprising graphene and carbon nanotubes  
An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped...
8796741 Semiconductor device and methods of making semiconductor device using graphene  
A semiconductor device and methods of making a semiconductor device using graphene are described. A monolithic three dimensional integrated circuit device includes a first layer having first...
8796668 Metal-free integrated circuits comprising graphene and carbon nanotubes  
An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped...
8729529 Thin film transistor including a nanoconductor layer  
A thin film transistor having a channel region including a nanoconductor layer. The nanoconductor layer can be a dispersed monolayer of nanotubes or nanowires formed of carbon. The thin film...
8716695 Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process  
A method of fabricating a FET device is provided which includes the following steps. Nanowires/pads are formed in a SOI layer over a BOX layer, wherein the nanowires are suspended over the BOX. A...
8703558 Graphene device and method for manufacturing the same  
The invention provides a graphene device structure and a method for manufacturing the same, the device structure comprising a graphene layer; a gate region in contact with the graphene layer;...
8680507 A1N inter-layers in III-N material grown on DBR/silicon substrate  
A DBR/gallium nitride/aluminum nitride base grown on a silicon substrate includes a Distributed Bragg Reflector (DBR) positioned on the silicon substrate. The DBR is substantially crystal lattice...
8674379 Light-emitting device package and method of manufacturing the same  
Provided are a light-emitting device package and a method of manufacturing the same. The light-emitting device package may include a plurality of light-emitting chips on one substrate (board). The...
8669163 Tunnel field-effect transistors with superlattice channels  
A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate...
8659006 Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices  
A nanowire FET device includes a SOI wafer having a SOI layer over a BOX, and a plurality of nanowires and pads patterned in the SOI layer, wherein the nanowires are suspended over the BOX; an...
8642996 Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates  
Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or...
8633518 Gallium nitride power devices  
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face...
8629428 Line-tunneling tunnel field-effect transistor (TFET) and manufacturing method  
A tunnel field effect transistor (TFET) and method of making the same is provided. The TFET comprises a source-channel-drain structure and a gate electrode. The source region comprises a first...
8624223 Side-gate defined tunable nanoconstriction in double-gated graphene multilayers  
A graphene-based electrically tunable nanoconstriction device and a non-transitory tangible computer readable medium encoded with a program for fabricating the device that includes a back-gate...
8617941 High-speed graphene transistor and method of fabrication by patternable hard mask materials  
Graphene or carbon nanotube-based transistor devices and techniques for the fabrication thereof are provided. In one aspect, a transistor is provided. The transistor includes a substrate; a...
8618534 Field-effect transistor with a dielectric layer having therein denatured albumen  
A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the...
8614141 Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices  
A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are...
8614136 Techniques for fabricating janus MEMS transistors  
Electromechanical transistors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical...
8614435 Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices  
A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are...
8603872 Field effect device provided with a localized dopant diffusion barrier area and fabrication method  
The field effect device comprises a sacrificial gate electrode having side walls covered by lateral spacers formed on a semiconductor material film. The source/drain electrodes are formed in the...
8598590 Organic light emitting diode display device  
An organic light emitting diode display device includes: a switching thin film transistor in a pixel region, the switching thin film transistor including a switching semiconductor layer of...
8581233 Variable capacitor single-electron transistor including a P-N junction gate electrode  
The present invention provides a single-electron transistor device 100. The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the...
8575663 High-sensitivity nanoscale wire sensors  
The present invention generally relates, in some aspects, to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. Certain embodiments of the...
8575665 Graphene electronic device and method of fabricating the same  
The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide,...
8575624 Semiconductor device  
In one embodiment, a semiconductor device includes a semiconductor substrate, a gate electrode provided on the semiconductor substrate via an insulating layer, and a gate insulator provided on a...
8507892 Omega shaped nanowire tunnel field effect transistors  
A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and...
8507893 Electronic device, light-receiving and light-emitting device, electronic integrated circuit and optical integrated circuit using the devices  
Provided are an electronic device and a light-receiving and light-emitting device which can control the electron configuration of a graphene sheet and the band gap thereof, and an electronic...
8455922 Programmable gate III-nitride semiconductor device  
A III-nitride semiconductor device which includes a charged gate insulation body.
8431924 Control of tunneling junction in a hetero tunnel field effect transistor  
A method to fabricate a hetero-junction in a Tunnel Field Effect Transistor device configuration (e.g. in a segmented nanowire TFET) is provided. A thin transition layer is inserted in between the...
8426891 Semiconductor device and method of fabricating the same  
A semiconductor substrate according to one embodiment includes: a first transistor having a first gate insulating film formed on a semiconductor substrate, a first gate electrode formed on the...

Matches 1 - 50 out of 164 1 2 3 4 >