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7626219 Surround gate access transistors with grown ultra-thin bodies  
A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to...
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same  
A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed...
7468539 Field-effect transistor with a gate having a plurality of branching elements arranged parallel to each other  
A field-effect transistor includes a substrate of a first conductivity type, and a channel diffusion region of a second conductivity type provided in the first conductivity type substrate. The...
7439563 High-breakdown-voltage semiconductor device  
A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions...
7372111 Semiconductor device with improved breakdown voltage and high current capacity  
The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged...
7268378 Structure for reduced gate capacitance in a JFET  
A junction field effect transistor (JFET) with a reduced gate capacitance. A gate definition spacer is formed on the wall of an etched trench to establish the lateral extent of an implanted gate...
7265398 Method and structure for composite trench fill  
A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon,...
7262447 Metal oxide silicon transistor and semiconductor apparatus having high λ and β performances  
A semiconductor apparatus includes a MOS transistor having a semiconductor substrate providing as a channel region between a source and a drain. A gate electrode is formed on the semiconductor...
7238976 Schottky barrier rectifier and method of manufacturing the same  
A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a...
7230275 Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same  
A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate...
7141856 Multi-structured Si-fin  
Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical...
6972444 Wafer with saw street guide  
A wafer is formed with metal traces that extend a distance across the wafer on opposite sides of a saw street. The resistances of the metal traces, which can each be formed from one or more layers...
6885110 Electrical circuit board and TFT array substrate and liquid crystal display device utilizing the same  
TFT array substrates used for liquid crystal display panels are disclosed of which the fabrication processes are simplified and the manufacturing costs are reduced by reducing the number of masks...
6870189 Pinch-off type vertical junction field effect transistor and method of manufacturing the same  
A junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation....
6831328 Anode voltage sensor of a vertical power component and use for protecting against short circuits  
The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor,...
6759693 Nanotube permeable base transistor  
A permeable base transistor (PBT) having a base layer including metallic nanotubes embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter and collector...
6750477 Static induction transistor  
In a static induction transistor, in addition to a first gate layer ( 4 ), a plurality of second gate layers ( 41 ) having a shallower depth and a narrower gap therebetween than those of the first...
6737677 Wide bandgap semiconductor device and method for manufacturing the same  
The present invention provides a wide bandgap semiconductor device encompassing: (a) a drift layer of a first conductivity type made of a wide bandgap semiconductor material; (b) a body region of a...
6720615 Vertical-type MIS semiconductor device  
A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a...
6677626 Semiconductor device with alternating conductivity type layer and method of manufacturing the same  
This invention achieves a high inverse voltage of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is...
6674107 Enhancement mode junction field effect transistor with low on resistance  
A normally “off” enhancement mode junction field effect transistor (JFET) is disclose. The JFET has a low threshold voltage in the range of 0.2 to 0.3 volts and a low on resistance. The...
6639272 Charge compensation semiconductor configuration  
Charge balancing is achieved in a compensation component by creating compensation regions having different thickness. In this manner, the ripple of the electric field can be chosen to have...
6541819 Semiconductor device having non-power enhanced and power enhanced metal oxide semiconductor devices and a method of manufacture therefor  
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a non-power enhanced metal oxide semiconductor (non-PEMOS) device...
6459108 Semiconductor configuration and current limiting device  
The semiconductor configuration is formed with a lateral channel region and an adjoining vertical channel region in an n-conductive first semiconductor region. When a predetermined saturation...
6365919 Silicon carbide junction field effect transistor  
A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body....
6344379 Semiconductor device with an undulating base region and method therefor  
A transistor ( 30 ) uses a single continuous base region ( 40 ) with an undulating structure. The semiconductor device is an insulated gate field effect transistor having a semiconductor substrate...
6313482 Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein  
Silicon carbide power devices having trench-based charge coupling regions include a silicon carbide substrate having a silicon carbide drift region of first conductivity type (e.g., N-type) and a...
6232625 Semiconductor configuration and use thereof  
A semiconductor configuration, in particular based on silicon carbide, is specified which rapidly limits a short-circuit current to an acceptable current value. For this purpose, when a...
6172381 Source/drain junction areas self aligned between a sidewall spacer and an etched lateral sidewall  
An integrated circuit fabrication process is provided in which an elevated doped polysilicon structure may be formed and isolated from another polysilicon structure lying in the same elevated...
6140680 Integrated power semiconductor transistor with current sensing  
The present invention relates to semiconductor integrated transistors comprising a conduction section and a sense section for the current flowing through the conduction section both sections being...
6097046 Vertical field effect transistor and diode  
A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).
6084277 Lateral power MOSFET with improved gate design  
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate design in which the gate structure is coupled to the gate electrode through contacts at a plurality of...
6034385 Current-limiting semiconductor configuration  
A semiconductor configuration includes a first semiconductor region which has a predetermined conductivity type and a first surface. There is a contact region disposed on the first surface of the...
6020607 Semiconductor device having junction field effect transistors  
An N - type epitaxial layer is formed on a P type semiconductor substrate, and a P + type insulative isolating layer is so formed as to reach the semiconductor substrate from the surface of the...
6008519 Vertical transistor and method  
A vertical transistor (70) comprising a first semiconductor layer (14) of a first conductive type. A gate structure (32) of a second conductive type disposed on the first semiconductor layer (14)....
5962893 Schottky tunneling device  
An n-semiconductor layer is arranged on a low-resistance n-substrate. A drain electrode is in ohmic contact with the n-substrate. A source electrode forms a Schottky junction with the...
5945701 Static induction transistor  
A static induction transistor having source, drain and gate regions. Channel regions are defined between adjacent gates and a drift region is defined from the ends of the channel regions to the...
5903020 Silicon carbide static induction transistor structure  
A static induction transistor having a silicon carbide substrate upon which is deposited a silicon carbide layer arrangement. The layer arrangement has a plurality of spaced gate regions for...
5889298 Vertical JFET field effect transistor  
A vertical field effect transistor (700) and fabrication method with buried gates (704) having gate sidewall crystal orientation the same as the substrate surface and a low index substrate crystal...
5883399 Thin film transistor having double channels and its manufacturing method  
This invention provides a method for manufacturing a this film transistor which comprised the steps of providing an oxide layer; etching a portion of the oxide layer so that a recess is formed;...
5821560 Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element  
A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a...
5804848 Field effect transistor having multiple gate electrodes surrounding the channel region  
A field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source and drain regions and gate electrodes disposed to at...
5789791 Multi-finger MOS transistor with reduced gate resistance  
The gate resistance of a high-frequency multi-finger MOS transistor is reduced by shorting together the ends of each of the gates by utilizing gate contacts, metal regions, vias, and a metal layer....
5747841 Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement  
A circuit arrangement for comparatively high powers, for example, for gas discharge lamps is protected against high currents, which may be caused inter alia by inrush effects or transients, by a...
5703389 Vertical IGFET configuration having low on-resistance and method  
A vertical IGFET configuration includes a stripe arrangement having a non-linear shape. In one example, a stripe arrangement (30) has contact cut-out portions (41) and elongated portions (42). The...
5663582 High frequency static induction transistor having high output  
A recess-gate type static induction transistor having a high breakdown voltage is provided, which includes an n-type channel region provided over an n + -type drain region, p + -type elongated...
5612547 Silicon carbide static induction transistor  
A static induction transistor fabricated of silicon carbide, preferably 6H polytype, although any silicon carbide polytype may be used. The preferred static induction transistor is the recessed...
5602405 Semiconductor device with base formed by the junction of two semiconductors of the same conductive type  
A semiconductor device, by which a base in which gates are buried can be formed by the junction of semiconductor substrates to each other at a lower temperature, and a fabrication process thereof...
5585654 Field effect transistor having saturated drain current characteristic  
A field effect transistor has the property that the product of its series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the operative...
5557119 Field effect transistor having unsaturated drain current characteristic  
A field effect transistor has the property that the product of its active total series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the...
Matches 1 - 50 out of 162 1 2 3 4 >