Matches 1 - 50 out of 250 1 2 3 4 5 >
Match Document Document Title
7638792 Tunnel junction light emitting device  
A tunnel junction light emitting device according to the present invention is provided with an active layer and an electron tunneling region supplying the active layer with carriers. The electron...
7619241 Variable capacitor single-electron transistor including a P-N junction gate electrode  
The present invention provides a single-electron transistor device 100 . The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated...
7612733 Transition region for use with an antenna-integrated electron tunneling device and method  
An electron tunneling device includes a first non-insulating strip and a second non-insulating strip spaced apart from one another such that first and second end portions, respectively, of the...
7595500 High speed electron tunneling devices  
A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form...
7586427 Sequential triggering of series-connected resonant tunneling diodes  
One embodiment of the invention includes a quantization circuit. The circuit comprises a sense resistor configured to provide a voltage that is indicative of a digital quantization of an input...
7579618 Carbon nanotube resonator transistor and method of making same  
A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input...
7579646 Flash memory with deep quantum well and high-K dielectric  
A flash memory cell includes a substrate and a gate structure formed on the substrate. The gate structure includes a tunneling layer over the substrate, a storage layer over the tunneling layer, a...
7564096 Scalable power field effect transistor with improved heavy body structure and method of manufacture  
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate...
7560736 Mid-infrared resonant cavity light emitting diodes  
A Resonant Cavity Light Emitting Diode (RCLED) device having a first active region having one or more quantum wells disposed within, a first chamber and a second chamber coupled to the first active...
7541610 LED device with re-emitting semiconductor construction and converging optical element  
A light source is provided including an LED component having an emitting surface, which may include: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor...
7534710 Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same  
The present invention relates to a device structure that contains two or more conducting layers, two peripheral insulating layers, one or more intermediate insulating layers, and two or more...
7528403 Hybrid silicon-on-insulator waveguide devices  
Device designs and techniques for providing efficient hybrid silicon-on-insulator devices where a silicon waveguide core or resonator is clad by the insulator and a top functional cladding layer in...
7514708 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio  
A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in...
7494847 Method for making a semiconductor multi-package module having inverted wire bond carrier second package  
A semiconductor multi-package module has stacked lower and upper packages, each of which includes a die attached to a substrate, in which the second package is inverted, in which the upper and...
7492022 Non-magnetic semiconductor spin transistor  
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the...
7361943 Silicon-based backward diodes for zero-biased square law detection and detector arrays of same  
A Si-based diode ( 10, 10′, 100 ) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction ( 16, 16′,...
7351996 Method of increasing efficiency of thermotunnel devices  
The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is...
7199391 Device with quantum dot layer spaced from delta doped layer  
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device;...
7187028 Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects  
A silicon-on-insulator (SOI) memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be...
7186380 Transistor and sensors made from molecular materials with electric dipoles  
A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by...
7126151 Interconnected high speed electron tunneling devices  
An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron...
7123638 Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant  
A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction...
7119359 Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures  
The design and operation of a p-i-n device, operating in a sequential resonant tunneling condition for use as a photodetector and an optically pumped emitter, is disclosed. The device contains...
7098472 Negative differential resistance (NDR) elements and memory device using the same  
A two-terminal NDR device can be formed by coupling the gate and drain of an NDR-capable FET, such that the coupled gate and drain form a first terminal and the source of the NDR-capable FET forms...
7098471 Semiconductor quantum well devices and methods of making the same  
Semiconductor quantum well devices and methods of making the same are described. In one aspect, a device includes a quantum well structure that includes semiconductor layers defining interleaved...
7078855 Dielectric light device  
A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least...
7038233 Semiconductor optical devices and optical modules  
An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for...
7034331 Material systems for semiconductor tunnel-junction structures  
The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction...
7008806 Multi-subband criterion for the design of a double-barrier quantum-well intrinsic oscillator  
Disclosed is a method of determining causes of intrinsic oscillations in a double-barrier quantum-well intrinsic oscillator comprising developing an emitter quantum-well (EQW) from a double-barrier...
7002175 Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration  
A double barrier resonant tunneling diode (RTD) is formed and integrated with a level of CMOS/BJT/SiGe devices and circuits through processes such as metal-to-metal thermocompressional bonding,...
6974967 Quantum logic gate and quantum logic operation method using exciton  
A quantum logic gate utilizes an inter-polarization (dipole—dipole) interaction between excitons having polarization in semiconductor quantum well structures, or a spin exchange interaction...
6967347 Terahertz interconnect system and applications  
An assembly includes a first electrical circuitry for providing a first electrical signal containing data and a transmitting arrangement, connected with the first electrical circuitry, for...
6952019 Electron device which controls quantum chaos and quantum chaos controlling method  
An electron device which controls quantum chaos wherein a quantum chaos property is controlled extensively and externally is provided. The electron device which controls quantum chaos is...
6929987 Microelectronic device fabrication method  
In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so...
6881984 Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode  
A resonant-cavity light-emitting diode includes a semiconductor light-emitting layer sandwiched between an under and an upper semiconductor distributed Bragg reflector mirror layer, which are...
6864501 Photon source and method of its fabrication and operation  
A photon source includes a photon source body including quantum dots, a non-insulating layer overlying and in contact with the quantum dots, and an electrical contact that allows electrically...
6849867 Method of making radiation emitter devices  
A radiation emitting device of the present invention includes at least one radiation emitter, first and second electrical leads electrically coupled to the radiation emitter, and an integral...
6835949 Terahertz device integrated antenna for use in resonant and non-resonant modes and method  
An assembly includes a device for receiving at least one input to produce an output. An antenna supports the device to transfer the input to the device and further to transfer the output from the...
6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel  
A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are...
6822266 Semiconductor light-emitting device  
A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall...
6819695 Dopant diffusion barrier layer for use in III-V structures  
A multi-layer dopant diffusion barrier is disclosed that effectively prevents dopant diffusion but does not contribute to parasitic pn junctions or parasitic capacitance. A multi-layer dopant...
6803598 Si-based resonant interband tunneling diodes and method of making interband tunneling diodes  
Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers...
6794673 Plastic substrate for a semiconductor thin film  
An amorphous silicon thin film includes a plastic substrate as a base, and insulating layers are formed thereon each radiated with a pulse laser beam which removes volatile contaminants like a...
6768131 Semiconductor device with gigantic photon-photon interactions  
The invention uses the optical nonlinearity of electrically biased exciton polariton in a strong coupling regime or exciton polariton in a strong coupling regime with spatially separated electron...
6765303 FinFET-based SRAM cell  
A SRAM cell includes a single FinFET and two resonant tunnel diodes. The FinFet has multiple channel regions formed from separate fins. The resonant tunnel diodes may be formed from FinFET type...
6762071 Method for fabricating a metal-oxide electron tunneling device for solar energy conversion  
A method for fabricating an electron tunneling device on a substrate includes forming a first non-insulating layer on the substrate and providing a first amorphous layer. The method further...
6728281 Quantum-dot photon turnstile device  
A quantum-dot photon turnstile device is capable of producing a stream of regulated and directed single pairs of photons with opposite circular polarizations. This device operates by injecting...
6710367 Multiple quantum well semiconductor optical modulator  
A quantum-confined Stark effect semiconductor optical modulator, operable to modulate light of a particular wavelength in the range of around 780 to 840 nm. A p-i-n diode having p, intrinsic and n...
6707070 Wavelength-tunable light emitting device  
A wavelength-tunable light emitting device includes a substrate having an atomic-scale structure formed on a surface thereof, a needle member for locally applying a voltage through a vacuum space...
6667490 Method and system for generating a memory cell  
A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A...
Matches 1 - 50 out of 250 1 2 3 4 5 >