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7643078 CCD with improved charge transfer  
A charge coupled device having a plurality of non-adjacent first gate electrode pairs; a plurality of second gate electrode pairs placed in every second space between the first gate electrode...
7589367 Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines  
A line layout structure and method in a semiconductor memory device having a hierarchical structure are provided. In a semiconductor memory device having a global word line and a local word line,...
7589364 Electrically rewritable non-volatile memory element and method of manufacturing the same  
A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11 a , a second interlayer insulation layer 12 having a second through-hole 12 a ...
7569845 Phase-change memory and fabrication method thereof  
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first...
7479671 Thin film phase change memory cell formed on silicon-on-insulator substrate  
A memory cell includes a semiconductor feature and a phase change material. The semiconductor feature defines a groove that divides the semiconductor feature into a first electrode and a second...
7459716 Resistance change memory device  
A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines word lines; a read/write circuit formed on the semiconductor substrate;...
7449710 Vacuum jacket for phase change memory element  
A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper...
7440019 Solid-state image pick-up device  
A plurality of low-sensitivity pixels 10 and a plurality of high-sensitivity pixels 20 are arranged like a tetragonal grid respectively, and are provided in positions shifted by ½ of an array...
7425735 Multi-layer phase-changeable memory devices  
A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second...
7423300 Single-mask phase change memory element  
A memory device. An array of memory elements is formed on a semiconductor chip. A parallel array of word lines extends in a first direction, connecting each memory element to a data source, and a...
7385235 Spacer chalcogenide memory device  
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are...
7381981 Phase-change TaN resistor based triple-state/multi-state read only memory  
The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile...
7374174 Small electrode for resistance variable devices  
A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode....
7348620 Forming phase change memories  
Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase...
7332370 Method of manufacturing a phase change RAM device utilizing reduced phase change current  
To effectively lower the current required for changing a phase of a phase change layer in a phase change RAM device, metal pads are formed on a semiconductor substrate, and an oxide layer is formed...
7307267 Electric device with phase change material and parallel heater  
The electric device ( 1, 100 ) has a body ( 2, 102 ) having a resistor ( 7, 107 ) comprising a phase change material being changeable between a first phase and a second phase. The resistor ( 7, 107...
7265397 CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture  
An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is...
7233054 Phase change material and non-volatile memory device using the same  
The present invention provides a phase change memory cell comprising (Ge A Sb B Te C ) 1-X (R a S b Te C ) X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a...
7157754 Solid-state imaging device and interline transfer CCD image sensor  
A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a...
7154549 Solid state image sensor having a single-layered electrode structure  
Provided is a CCD image sensor wherein driving power and power consumption are reduced without increasing unusable regions. Photodiodes are arranged in a honeycomb form. Each vertical...
7132702 Image sensor  
In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite...
7119353 Electric device with phase change material and method of manufacturing the same  
The electric device ( 100 ) has a body ( 102 ) having a resistor ( 107 ) comprising a phase change material being changeable between a first phase and a second phase. The resistor ( 107 ) has a...
7115927 Phase changeable memory devices  
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes...
7075131 Phase change memory device  
A semiconductor device includes a first memory cell having a substrate, an insulation layer disposed over the substrate, a first polysilicon gate formed over the insulation layer, at least one...
7030410 Resistance variable device  
A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material...
7015520 Charge-coupled devices having efficient charge transfer rates  
A camera includes a charge-coupled device having a substrate or well of a first conductivity type; a buried channel of a second conductivity type; a dielectric disposed on the substrate; six gates...
6995388 Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode  
A phase changeable memory device includes a substrate having a lower electrode disposed thereon. A phase changeable pattern is disposed on the lower electrode and an upper electrode is disposed on...
6987294 Charge-coupled device and method of fabricating the same  
A charge-coupled device capable of attaining excellent performance with a single-layer gate electrode structure is obtained. This charge-coupled device, having a single-layer gate electrode...
6967344 Multi-terminal chalcogenide switching devices  
Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal...
6885021 Adhesion layer for a polymer memory device and method therefor  
Briefly, in accordance with one embodiment of the invention, a device, such as a memory cell, includes a dielectric layer and a layer of phase-change material with an adhesion layer between the...
6864503 Spacer chalcogenide memory method and device  
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are...
6862333 CMD and CMD-carrying CCD device  
This invention controls the signal amplification rate in a simple way with high precision in a CMD or CMD-carrying CCD device. CMD 12 has plural sections, such as M sections (U 1 -U M ), each of...
6841811 Large area, fast frame rate charge coupled device  
Large area, fast frame rate, charge coupled devices (CCDs) are provided. Interline transfer CCDs can have interleaved pinned photodiodes and vertical shift registers. The interline transfer CCDs...
6833559 Non-volatile resistance variable device  
A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material...
6720593 Charge-coupled device having a reduced width for barrier sections in a transfer channel  
A charge-coupled device (CCD) includes first-level transfer electrodes and second-level transfer electrodes alternately arranged along a transfer channel, wherein charge storage sections underlying...
6586784 Accumulation mode clocking of a charge-coupled device  
A method for reducing dark current within a charge coupled device includes the steps of providing three or more phases of gates separated by an insulating layer from a buried channel of the first...
6573541 Charge coupled device with channel well  
A solid-state CCD device suitable for forming into arrays and for use with suitable hardware to form video image capture devices and methods for fabricating same are provided.
6437383 Dual trench isolation for a phase-change memory cell and method of making same  
The invention relates to a phase-change memory device. The device includes a double-trench isolation structure around the diode stack that communicates to the lower electrode. The present invention...
6417531 Charge transfer device with final potential well close to floating diffusion region  
A charge transfer device has a charge transfer region under charge transfer electrodes for stepwise conveying charge packets through potential wells to a floating diffusion region, and the charge...
6078069 Bidirectional horizontal charge transfer device  
A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the...
6011282 Charge coupled device with a buried channel two-phase driven two-layer electrode structure  
A charge coupled device of buried channel type suitable to drive the device by clock pluses having a low voltage is disclosed. Channels of the charge coupled device comprises first to third...
5986296 CCD type semiconductor device  
The disclosure relates to charge-coupled devices taking the form of shift registers and, more specifically, to those working in the MPP (Multi-Pinned Phase) mode, i.e. with high negative...
5892251 Apparatus for transferring electric charges  
A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is...
5861642 Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations  
The semiconductor device of the present invention is equipped with a plurality of photodiodes, a horizontal transfer part and a vertical transfer part, and in particular, the horizontal transfer...
5862197 Charge coupled device having CCIR/EIA mode coversion function  
A charge coupled device having a CCIR/EIA mode conversion function includes: a plurality of VCCD regions formed in the direction of row, the VCCD regions having a predetermined interval from one...
5784103 Charge coupled imaging device having an adjustable aspect ratio and camera provided with such a charge coupled imaging device  
It is known to adjust the width/height ratio (aspect ratio) in charge coupled imaging devices in that a number of columns may or may not be used on either side of the imaging matrix. It is possible...
5731601 Four-phase driving CCD solid-state imaging device with a two-layer transfer gate electrode  
According to the present invention, there is provided a solid-state imaging device that has a two-layer transfer electrode structure and is based on a four-phase driving all-pixel reading scheme....
5646427 Integrated circuit defect tolerant architecture  
A structure for a charge coupled device (CCD) to minimize effects of masking defects of a predetermined dimensional extent includes a plurality of sets of conductors, a plurality of strapping...
5641700 Charge coupled device with edge aligned implants and electrodes  
A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a...
5627388 CCD-solid state image sensor using electron and hole signal charges and method for processing signal thereof  
A CCD-solid state image sensor includes a sensing area for generating signal charges in response to incident light, a storage area for storing the signal charges from the sensing area, an HCCD...
Matches 1 - 50 out of 117 1 2 3 >