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8183558 Compound semiconductor device with T-shaped gate electrode  
A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance...
8183556 Extreme high mobility CMOS logic  
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
8178866 Optoelectronic memory device and method for manufacturing and measuring the same  
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a...
8159287 Transistor device and method  
A field-effect transistor device, including: a semiconductor heterostructure comprising, in a vertically stacked configuration, a semiconductor gate layer between semiconductor source and drain...
8154012 Thin film transistor  
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
8154011 Thin film transistor  
A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate...
8148715 Solid state charge qubit device  
This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up....
8148796 Solar cell and manufacturing method thereof  
Disclosed are a solar cell and a manufacturing method thereof. The solar cell in accordance with an embodiment of the present invention includes: a substrate having a plurality of holes formed on...
8143658 Charge storage nanostructure  
The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to...
8143616 Making a structure  
A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.
8138491 Self-aligned nanotube field effect transistor  
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the...
8138501 Switching element and manufacturing method thereof  
Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate...
8124961 Single electron transistor  
A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the...
8119488 Scalable quantum well device and method for manufacturing the same  
A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the...
8120015 Resonant structure comprising wire and resonant tunneling transistor  
A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third...
8106510 Nano-tube thermal interface structure  
A semiconductor structure having: an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; a...
8106383 Self-aligned graphene transistor  
A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating...
8106382 Field effect transistor  
A source electrode 105 which is connected to a portion of at least one semiconductor nanostructure 103 among a plurality of semiconductor nanostructures, a drain electrode 106 connected to another...
8106424 Field effect transistor with a heterostructure  
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made...
8101984 Spin injector  
A spin injector for use in a microelectronic device such as a field effect transistor (FET) is disclosed. The spin injector includes an array of ferromagnetic elements disposed within a...
8097515 Self-aligned contacts for nanowire field effect transistors  
A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a semiconductor substrate, forming a gate structure around a portion of the nanowire, forming a...
8093584 Self-aligned replacement metal gate process for QWFET devices  
A self-aligned replacement metal gate QWFET device comprises a III-V quantum well layer formed on a substrate, a III-V barrier layer formed on the quantum well layer, a III-V etch stop layer formed...
8093644 Multiwalled carbon nanotube memory device  
A carbon nanotube based memory device comprises a set of three concentric carbon nanotubes having different diameters. The diameters of the three concentric carbon nanotubes are selected such that...
8084308 Single gate inverter nanowire mesh  
Nanowire-based devices are provided. In one aspect, a field-effect transistor (FET) inverter is provided. The FET inverter includes a plurality of device layers oriented vertically in a stack, each...
8053760 Thin film transistor  
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
8044391 Thin film transistor and method of fabricating the same  
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central...
8039334 Shared gate for conventional planar device and horizontal CNT  
A semiconductor structure in which a planar semiconductor device and a horizontal carbon nanotube transistor have a shared gate and a method of fabricating the same are provided in the present...
8026504 Semiconductor device and method of forming the same  
A semiconductor device and a method of forming the same are provided. The method includes preparing a semiconductor substrate. Insulating layers may be sequentially formed on the semiconductor...
8026508 Semiconductor device and method of fabricating the same  
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a single electron box including a first quantum dot, a charge storage gate on the first...
8026509 Tunnel field effect transistor and method of manufacturing same  
A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the...
8022393 Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process  
The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a...
8017934 Carbon nanotube based integrated semiconductor circuit  
Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon...
8017933 Compositionally-graded quantum-well channels for semiconductor devices  
A compositionally-graded quantum well channel for a semiconductor device is described. A semiconductor device includes a semiconductor hetero-structure disposed above a substrate and having a...
8013324 Structurally stabilized semiconductor nanowire  
In one embodiment, a semiconductor nanowire having a monotonically increasing width with distance from a middle portion toward adjoining semiconductor pads is provided. A semiconductor link portion...
8013321 Composite comprising array of needle-like crystal, method for producing the same, photovoltaic conversion element, light emitting element, and capacitor  
A composite of a base and an array of needle-like crystals formed on the surface of the base is provided, in which the base side and the opposite side to the base with respect to the array can be...
8013320 Nitride semiconductor device and method for fabricating the same  
A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the...
8008649 Incorporating gate control over a resonant tunneling structure in CMOS to reduce off-state current leakage, supply voltage and power consumption  
A semiconductor device and method for fabricating a semiconductor device incorporating gate control over a resonant tunneling structure. The semiconductor device includes a source terminal, a gate...
8008650 Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics  
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive...
7999248 Ultrahigh density patterning of conducting media  
A nanoscale device and a method for creating and erasing of nanoscale conducting regions at the interface between two insulating oxides SrTiO3 and LaAlO3 is provided. The method uses the tip of a...
7989800 Nanowire field effect junction diode  
A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to...
7973305 Thin film transistor  
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
7964489 Semiconductor device  
A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least...
7955932 Single electron transistor and method of manufacturing the same  
A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the...
7955881 Method of fabricating quantum well structure  
In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer...
7952088 Semiconducting device having graphene channel  
The present invention, in one embodiment, provides a semiconductor device including a substrate having an dielectric layer; at least one graphene layer overlying the dielectric layer; a back gate...
7947971 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains  
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel...
7928426 Forming a non-planar transistor having a quantum well channel  
In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer,...
7928427 Semiconductor device with group III-V channel and group IV source-drain and method for manufacturing the same  
The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and...
7923753 Field effect transistor having Ohmic electrode in a recess  
The contact resistance between an Ohmic electrode and an electron transit layer is reduced compared with a case in which the Ohmic electrode is provided to a depth less than the heterointerface. As...
7915608 Scalable quantum well device and method for manufacturing the same  
A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the...
Matches 1 - 50 out of 385 1 2 3 4 5 6 7 8 >