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8183557 |
(Al,In,Ga,B)N device structures on a patterned substrate
A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1−xN and InyGa1−yN where 0
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8178863 |
Lateral collection architecture for SLS detectors
Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the...
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8169520 |
Solid-state imaging apparatus and camera
A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the...
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8159004 |
Compound semiconductor device having dopant concentration gradient
A semiconductor device includes a first compound semiconductor layer having a two-dimensional carrier gas channel, a second compound semiconductor layer which functions as a barrier layer and is...
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8148796 |
Solar cell and manufacturing method thereof
Disclosed are a solar cell and a manufacturing method thereof. The solar cell in accordance with an embodiment of the present invention includes: a substrate having a plurality of holes formed on...
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8120046 |
Light-emitting element
A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type...
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8120014 |
Nanowire based plasmonics
Nanoscaled, tunable detector devices for ultrasensitive detection of terahertz (THz) radiation based on the fabrication of one-dimensional (1D) plasma devices having clouds of strongly correlated...
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8115235 |
Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device...
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8110823 |
III-V photonic integration on silicon
Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other...
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8106381 |
Semiconductor structures with rare-earths
The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable...
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8106379 |
Hybrid silicon evanescent photodetectors
Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on...
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8093583 |
Light emitting diode having barrier layer of superlattice structure
A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a...
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8050305 |
Semiconductor device
A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor...
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8044386 |
Nitride semiconductor light emitting device and fabricating method thereof
A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier...
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8044409 |
III-nitride based semiconductor structure with multiple conductive tunneling layer
A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride...
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8044379 |
Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an...
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8022390 |
Lateral conduction infrared photodetector
A photodetector for detecting infrared light in a wavelength range of 3-25 μm is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II ...
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8022392 |
Semiconductor layer structure with superlattice
The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of...
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8013320 |
Nitride semiconductor device and method for fabricating the same
A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the...
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8008647 |
Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps
There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type...
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8000571 |
Light emitting device and planar waveguide with single-sided periodically stacked interface
Light emitting and waveguide devices with single-sided photonic bandgaps are provided. The light emitting device is formed from a heavily doped silicon (Si) bottom electrode, and a Si-containing...
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7985965 |
Quantum computing device and method including qubit arrays of entangled states using negative refractive index lenses
A quantum computing device and method employs qubit arrays of entangled states using negative refractive index lenses. A qubit includes a pair of neutral atoms separated by or disposed on opposite...
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7977666 |
Quantum dot infrared photodetector apparatus
The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device includes a substrate,...
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7977665 |
Nitride-based light emitting device
A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device...
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7968869 |
Optoelectronic architecture having compound conducting substrate
Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate...
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7960715 |
Semiconductor heterostructure nanowire devices
Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound...
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7932160 |
Planar oxidation method for producing a localised buried insulator
The invention relates to a method of producing a semiconductor device, comprising the following steps consisting in: forming first, second and third semiconductor layers (1, 2, 3), whereby the...
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7919337 |
Optoelectronic architecture having compound conducting substrate
Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate...
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7910916 |
Multi-junction type solar cell device
In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type...
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7902546 |
Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth...
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7897981 |
Light emitting device and method of manufacturing the same
The present invention provides a light emitting device comprising a first semiconductor substrate including a light emitting cell block having a plurality of light emitting cells connected in...
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7893450 |
Semiconductor light-emitting element and semiconductor light-emitting element manufacturing method
An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting...
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7893424 |
Semiconductor layer structure with superlattice
The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in...
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7872266 |
Semiconductor light emitting diode and method for manufacturing the same
A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect...
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7872274 |
n-Electrode for III group nitride based compound semiconductor element
An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the...
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7863139 |
Double gate FET and fabrication process
A method of fabricating a double gate FET on a silicon substrate includes the steps of sequentially epitaxially growing a lower gate layer of crystalline rare earth silicide material on the...
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RE42007 |
Vertical geometry InGaN LED
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting...
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7851821 |
Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device
A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a...
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7847282 |
Vertical tunneling transistor
The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the...
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7842956 |
Nitride semiconductor laser element and fabrication method thereof
On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is...
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7838868 |
Optoelectronic architecture having compound conducting substrate
Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate...
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7830939 |
Low cost InGaAIN based lasers
A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the...
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7821807 |
Nonequilibrium photodetectors with single carrier species barriers
A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a...
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7812874 |
Solid-state imaging apparatus and camera
A solid-state imaging apparatus includes a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the...
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7812423 |
Optical device comprising crystalline semiconductor layer and reflective element
An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises...
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7795609 |
Densely stacked and strain-compensated quantum dot active regions
Embodiments provide a quantum dot active structure and a methodology for its fabrication. The quantum dot active structure includes a substrate, a plurality of alternating regions of a quantum dot...
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7786503 |
Gallium nitride crystals and wafers and method of making
A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is s...
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7781755 |
Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode
The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial...
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7777233 |
Device containing non-blinking quantum dots
An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary...
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7771532 |
Nitride semiconductor substrate and method of producing same
A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase,...
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