Matches 1 - 50 out of 121 1 2 3 >


Match Document Document Title
8975634 Semiconductor device including oxide semiconductor film  
An object is to suppress occurrence of oxygen deficiency. An oxide semiconductor film is formed using germanium (Ge) instead of part of or all of gallium (Ga) or tin (Sn). At least one of bonds...
8952426 Three dimensional stacked nonvolatile semiconductor memory  
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks disposed side by...
8946784 Method and apparatus for image sensor packaging  
A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the...
8847202 Dual-band type-II superlattice detectors based on p-B-p design  
A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is...
8803141 Hydrazine-free solution deposition of chalcogenide films  
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
8772753 Nonvolatile semiconductor storage device  
A nonvolatile semiconductor storage device includes a word line, a first electrode, a high resistance ion diffusion layer, a second electrode, and a bit line. The word line is made of a conductive...
8766228 Electrically actuated device and method of controlling the formation of dopants therein  
An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of...
8723161 Two-color infrared detector  
A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins...
8698209 Encapsulated phase change cell structures and methods  
Methods and devices associated with phase change cell structures are described herein. In one or more embodiments, a method of forming a phase change cell structure includes forming a substrate...
8643140 Suspended beam for use in MEMS device  
A suspended beam includes a substrate, a main body and a first metal line structure. A first end of the main body is fixed onto the substrate. A second end of the main body is suspended. The first...
8642407 Devices having reduced susceptibility to soft-error effects and method for fabrication  
A semiconductor-on-insulator (SOI) substrate complementary metal oxide semiconductor (CMOS) device and fabrication methods include a p-type field effect transistor (PFET) and an n-type field...
8508001 Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same  
Disclosed herein is a semiconductor device that includes a semiconducting substrate and a work-function adjusting layer positioned at least partially in the semiconducting substrate, the...
8395192 Single mask adder phase change memory element  
A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a...
8390036 Image pickup device and image pickup apparatus  
An image pickup device includes a plurality of first electrodes, a second electrode, a third electrode, a photoelectric conversion layer, a plurality of signal reading portions, at least one of...
8383448 Method of fabricating metal oxide semiconductor device  
A method of fabricating an MOS device is provided. First, gates and source/drain regions of transistors are formed on a substrate. A photodiode doped region and a floating node doped region are...
8378361 Light-emitter, and light emitting device including a metal-oxide charge injection layer  
A light-emitter includes a first electrode and a layered body over the first electrode. The layered body includes a charge injection layer and a light-emitting layer. A bank defines a position of...
8239176 Simulation methods and systems for carriers having multiplications  
A simulation of a multiplication process includes tracing histories of a plurality of carriers, increasing a weight factor of a carrier to simulate a multiplication of the carrier, and summing the...
8188519 Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus  
A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to...
8178386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing  
An array of phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming a patterning layer on the separation layer and forming an array of mask...
8154056 Solid-state imaging device, method of manufacturing solid-state imaging device and method of driving solid-state imaging device  
A solid-state imaging device capable of securing sufficient sensitivity and obtaining favorable characteristics is provided. The solid-state imaging device includes a charge-transfer portion 2...
8084789 Phase change memory with ovonic threshold switch  
A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic...
8071971 Semiconductor device including air gap  
Embodiments relate to a semiconductor device, and more particularly, to a semiconductor device and a manufacturing method thereof that can reduce RC delay within the semiconductor device....
8053772 Hydrazine-free solution deposition of chalcogenide films  
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
8021524 Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states  
In some embodiments, the present invention is directed to processes for the combination of injecting charge in a material electrochemically via non-faradaic (double-layer) charging, and retaining...
8022450 Image sensor and method for manufacturing the same  
Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a first pixel having a first photodiode and a first readout circuit and a second pixel having a...
7960813 Programmable resistance memory devices and systems using the same and methods of forming the same  
A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the...
7956407 Vertical type semiconductor device, method of manufacturing a vertical type semiconductor device and method of operating a vertical semiconductor device  
A vertical pillar semiconductor device includes a substrate, a single crystalline semiconductor pattern, a gate insulation layer structure and a gate electrode. The substrate may include a first...
7859027 Back irradiating type solid state imaging device  
A back irradiating type solid state imaging device comprises: a first semiconductor substrate; a plurality of photoelectric converting devices that receives a light incident from a back side of...
7859036 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same  
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such...
7842985 CMOS image sensor  
Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance...
7750962 Device for subtracting or adding charge in a charge-coupled device  
The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer”...
7728320 Semiconductor memory device and phase change memory device  
A phase change memory (PCM) device includes a substrate, bottom electrodes disposed in the substrate, a first dielectric layer disposed on the substrate, second dielectric layers, third dielectric...
7687377 Method of fabricating phase change memory device  
In a method of fabricating a phase change memory (PCM) device, a substrate having bottom electrodes formed therein is provided. A first dielectric layer having cup-shaped thermal electrodes is...
7687830 Phase change memory with ovonic threshold switch  
A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic...
7678605 Method for chemical mechanical planarization of chalcogenide materials  
A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The...
7667218 Semiconductor integrated circuit device and method of manufacturing the same  
Disclosed herein is a phase change memory semiconductor integrated circuit device using a chalcogenide film that solves a problem that the operation temperature capable of ensuring long time...
7638357 Programmable resistance memory devices and systems using the same and methods of forming the same  
A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the...
7504675 Phase change memories with improved programming characteristics  
A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the...
7462920 Verification architecture of infrared thermal imaging array module  
The present invention relates to a verification architecture of an infrared thermal imaging array module, which includes the following steps. Perform specification design of thermal imaging...
7456879 Digital correlated double sampling using dual analog path  
An imaging system implements digital correlated double sampling (CDS) using dual channels. One channel converts reset voltages from pixel sensors to digital reset values, while the other channel...
7390715 Method of fabricating active layer thin film by metal chalcogenide precursor solution  
A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or...
7387949 Semiconductor device manufacturing method, semiconductor device, laminated semiconductor device, circuit substrate, and electronic apparatus  
A semiconductor device includes a semiconductor element, a penetrating electrode which penetrates the semiconductor element, and a resin layer which selectively covers side walls and corners of...
7348620 Forming phase change memories  
Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase...
7244651 Fabrication of an OTP-EPROM having reduced leakage current  
The leakage current of an OTP-EPROM cell formed using buried channel PMOS technology can be reduced. The reduction in leakage current of the OTP-EPROM can be achieved by blocking implantation of...
7214571 Electromechanical electron transfer devices  
An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be...
7199409 Device for subtracting or adding charge in a charge-coupled device  
The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer”...
7132319 Transparent double-injection field-effect transistor  
A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate...
7109516 Strained-semiconductor-on-insulator finFET device structures  
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
7009648 Method for operating a CMOS image sensor  
The present invention concerns a method for operating a CMOS image sensor including a matrix of pixels arranged in a plurality of lines and columns. Each of the pixels include a photosensor...
6960795 Pixel sensor cell for use in an imaging device  
A multi-layered gate for use in a CMOS or CCD imager formed with a second gate at least partially overlapping it. The multi-layered gate is a complete gate stack having an insulating layer, a...

Matches 1 - 50 out of 121 1 2 3 >