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7629643 Independent n-tips for multi-gate transistors  
Independent n-tips for multi-gate transistors are generally described. In one example, an apparatus includes a semiconductor fin, one or more multi-gate pull down (PD) devices coupled with the...
7629629 Semiconductor nanowire and semiconductor device including the nanowire  
A nanowire ( 100 ) according to the present invention includes a plurality of contact regions ( 10 a, 10 b ) and at least one channel region ( 12 ), which is connected to the contact regions ( 10...
7629603 Strain-inducing semiconductor regions  
A method to form a strain-inducing semiconductor region comprising three or more species of charge-neutral lattice-forming atoms is described. In one embodiment, formation of a strain-inducing...
7626237 Non-volatile MEMS memory cell and method of forming such memory cell  
A memory cell for storing a bit having one of two logic states. The memory cell includes a structure comprises a pair of electrically conductive shape memory alloy members separated by a...
7626190 Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device  
A memory device, in particular to a resistively switching memory device such as a Phase Change Random Access Memory (“PCRAM”), with a transistor is disclosed. Further, the invention relates to...
7616120 Multiple RF-port modulator for RFID tag  
Apparatus and systems may include integrated circuits for use with Radio Frequency Identification (RFID) tags having an antenna structure with at least three coupling ends. The integrated circuits...
7615807 Field-effect transistor structures with gate electrodes with a metal layer  
Provided is an integrated circuit including a transistor with a gate electrode. The gate electrode includes a polysilicon layer in contact with a gate dielectric layer separating the gate electrode...
7615418 High performance stress-enhance MOSFET and method of manufacture  
A semiconductor structure and method of manufacturing and more particularly a CMOS device with a stress inducing material embedded in both gates and also in the source/drain region of the PFET. The...
7612372 Method and system for laser thermal processing of semiconductor devices  
Methods and systems for performing laser thermal processing (LTP) of semiconductor devices are disclosed. The method includes forming a dielectric cap atop a temperature-sensitive element, and then...
7612412 Semiconductor device and boost circuit  
A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect...
7608489 High performance stress-enhance MOSFET and method of manufacture  
The invention relates to a semiconductor structure and method of manufacturing and more particularly to a CMOS device with a stress inducing material embedded in both gates and also in the...
7605410 Semiconductor device and manufacturing method thereof  
The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first...
7601995 Integrated circuit having resistive memory cells  
A memory includes an array of memory cells, each memory cell including resistive material, a first insulation material laterally surrounding the resistive material of each memory cell, and a heat...
7601996 Semiconductor device and manufacturing method thereof  
A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers...
7598597 Segmented magnetic shielding elements  
A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of...
7598544 Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same  
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube...
7582550 Semiconductor memory device and manufacturing method thereof  
A semiconductor memory device includes: a semiconductor substrate; a first impurity region; a second impurity region; a channel region; a first gate formed on a main surface on a side of the first...
7576355 Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor  
Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device...
7569850 Lipid bilayers on nano-templates  
A lipid bilayer on a nano-template comprising a nanotube or nanowire and a lipid bilayer around the nanotube or nanowire. One embodiment provides a method of fabricating a lipid bilayer on a...
7569848 Mobility enhanced CMOS devices  
Compressive or tensile materials are selectively introduced beneath and in alignment with spacer areas and adjacent to channel areas of a semiconductor substrate to enhance or degrade electron and...
7560757 Semiconductor device with a structure suitable for miniaturization  
A semiconductor device which is suitable for miniaturization, capable of improving variations in characteristics of a transistor and enhancing the current driving capability comprises a...
7556990 CMOS image sensor having improved signal efficiency and method for manufacturing the same  
A CMOS image sensor and a method for manufacturing the same improves signal efficiency by reducing a dark signal, and includes a substrate having a first conductive type comprising an image area...
7557512 Organic electroluminescent device and driving apparatus  
Provided is an organic EL device having a lower power consumption and high performance and enabling to display separate pictures on bidirectional screens as well as to display the same picture on...
7553722 Semiconductor device and method for manufacturing the same  
A semiconductor device includes: a semiconductor substrate having a first surface and a second surface, wherein the substrate has a first conductive type; a first trench extending from the first...
7550791 Transistor and its method of manufacture  
An embodiment includes a transistor and a method of manufacturing the transistor that includes carbon nano-tubes. The physical behavior of the carbon nano-tubes, particularly a bending action that...
7547930 High performance FET devices and methods thereof  
Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or...
7544978 Lipid nanotube or nanowire sensor  
A sensor apparatus comprising a nanotube or nanowire, a lipid bilayer around the nanotube or nanowire, and a sensing element connected to the lipid bilayer. Also a biosensor apparatus comprising a...
7544552 Method for manufacturing junction semiconductor device  
A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second...
7541626 High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate  
A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A...
7538383 Two-bit memory cell having conductive charge storage segments and method for fabricating same  
According to one exemplary embodiment, a two-bit memory cell includes a gate stack situated over a substrate, where the gate stack includes a charge-trapping layer. The charge-trapping layer...
7525118 Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device  
To provide a TEG capable of early stage feedback of testing contents and a method of testing using the TEG. TFTs for TEG are manufactured on a different substrate than actual panel TFTs by using...
7525133 Trench-gate MOS transistor composed of multiple conductors  
A semiconductor device comprises on a surface of a first semiconductor layer of the first conduction type a second semiconductor layer of the first conduction type. A semiconductor base layer of...
7514325 Fin-FET having GAA structure and methods of fabricating the same  
Example embodiments of the present invention relate to a semiconductor device and methods of fabricating the same. Other example embodiments of the present invention relate to a fin-field effect...
7514747 Silicon-on-insulator semiconductor device  
A semiconductor device formed in a silicon-on-insulator substrate includes a silicon channel region located between silicon source and drain regions, and a low-carrier-concentration layer that...
7511319 Methods and apparatus for a stepped-drift MOSFET  
A power metal-oxide-semiconductor field effect transistor (MOSFET)( 100 ) incorporates a stepped drift region including a shallow trench insulator (STI)( 112 ) partially overlapped by the gate (...
7508039 Carbon nanotube (CNT) multiplexers, circuits, and actuators  
Carbon nanotube (CNT) based devices include an actuator/switch that includes one or more fixed CNTs and a moveable CNT that can be urged toward or into contact with a selected fixed CNT with a...
7504674 Electronic apparatus having a core conductive structure within an insulating layer  
Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive...
7501672 Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor device  
A method used to form a semiconductor device provides a silicide layer on a plurality of transistor word lines and on a plurality of conductive plugs. In one embodiment, the word lines, one or more...
7494856 Semiconductor fabrication process using etch stop layer to optimize formation of source/drain stressor  
A semiconductor fabrication process includes forming an etch stop layer (ESL) overlying a buried oxide (BOX) layer and an active semiconductor layer overlying the ESL. A gate electrode is formed...
7485932 ACCUFET with Schottky source contact  
An accumulation mode FET (ACCUFET) which includes an insulated gate, an adjacently disposed insulated source field electrode, and a source contact that makes Schottky contact with the base region...
7482670 Enhancing strained device performance by use of multi narrow section layout  
A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes...
7479667 Semiconductor device with modified mobility and thin film transistor having the same  
Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active...
7476916 Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film  
[Problems] To provide a semiconductor device including a MIS-type FET having an excellent characteristic of low leakage current despite use of a high-K material of a high dielectric constant in a...
7473943 Gate configuration for nanowire electronic devices  
Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at...
7465953 Positioning of nanoparticles and fabrication of single election devices  
The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and...
7465976 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions  
The present invention relates to a Tunnel Field Effect Transistor (TFET). which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The IFET further includes...
7465989 High withstand voltage trenched MOS transistor and manufacturing method thereof  
A high withstand voltage transistor includes: a gate electrode provided in a trench formed on a semiconductor substrate; a source and a drain which are respectively formed on a side of the gate...
RE40602 Semiconductor device having a ferroelectric TFT and a dummy element  
The present invention provides a semiconductor device including a semiconductor element and a dummy semiconductor element adjacent to the semiconductor element. When the semiconductor element is a...
7459732 Gas-sensitive field-effect transistor with air gap  
A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form...
7449734 Junction semiconductor device and method for manufacturing the same  
A junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a...
Matches 1 - 50 out of 297 1 2 3 4 5 6 >