|
Match
|
Document |
Document Title |
|
|
8178863 |
Lateral collection architecture for SLS detectors
Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the...
|
|
|
8173982 |
Non-degenerate polarization-entangled photon pair generation device and non-degenerate polarization-entangled photon pair generation method
A non-degenerate polarization-entangled photon pair generation device (1) that efficiently and easily generates non-degenerate polarization-entangled photon pairs includes: a quantum-entangled...
|
|
|
8168457 |
Shaped articles comprising semiconductor nanocrystals and methods of making and using same
A shaped article comprising a plurality of semiconductor nanocrystals. Devices incorporating shaped articles are also provided. Methods of manufacturing shaped articles by various molding processes...
|
|
|
8154007 |
Silicon-quantum-dot semiconductor near-infrared photodetector
A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate...
|
|
|
8143615 |
Electron beam emitting device with a superlattice structure
A superlattice structure comprises a plurality of well layers made of first semiconductor and a plurality of barrier layers made of second semiconductor that has a band gap wider than that of the...
|
|
|
8143648 |
Unipolar tunneling photodetector
A photodetector containing a 2DEG layer is disclosed.
|
|
|
8134179 |
Photodiode with a reduced dark current and method for the production thereof
A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped...
|
|
|
8134141 |
Detector with tunable spectral response
A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses tha...
|
|
|
8120014 |
Nanowire based plasmonics
Nanoscaled, tunable detector devices for ultrasensitive detection of terahertz (THz) radiation based on the fabrication of one-dimensional (1D) plasma devices having clouds of strongly correlated...
|
|
|
8115193 |
Vertical resonator type light emitting diode
A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission...
|
|
|
8110427 |
Stacked-layered thin film solar cell and manufacturing method thereof
A stacked-layered thin film solar cell and a manufacturing method thereof are provided. The stacked-layered thin film solar cell includes a front electrode layer, a stacked-layered light-absorbing...
|
|
|
8101940 |
Photodetector and method for manufacturing photodetector
A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs...
|
|
|
8093675 |
Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module
To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member. A photoelectric conversion element of...
|
|
|
8093582 |
Dual band photodetector
A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and...
|
|
|
8080821 |
Thyristor radiation detector array and applications thereof
An array of thyristor detector devices is provided having an epitaxial growth structure with complementary types of modulation doped quantum well interfaces located between a P+ layer and an N+...
|
|
|
8058642 |
Light-receiving device
A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is f...
|
|
|
8053758 |
Semiconductor device
A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed...
|
|
|
8044379 |
Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an...
|
|
|
8043942 |
Method for producing core-shell nanowires, nanowires produced by the method and nanowire device comprising the nanowires
Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the...
|
|
|
8044439 |
Light-emitting device and manufacturing method of the same
A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a...
|
|
|
8026508 |
Semiconductor device and method of fabricating the same
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a single electron box including a first quantum dot, a charge storage gate on the first...
|
|
|
8022391 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Photodetectors and photovoltaics based on semiconductor nanocrystals
A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more...
|
|
|
8022390 |
Lateral conduction infrared photodetector
A photodetector for detecting infrared light in a wavelength range of 3-25 μm is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II ...
|
|
|
8022449 |
Photodiode array, method of manufacturing the same, and detecting device
A photodiode array includes a p-side electrode provided on each p-type region formed by selective diffusion and an n-side electrode connected to a non-growth part of an InP substrate and extends to...
|
|
|
8014636 |
Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices
A phase modulation waveguide structure includes one of a semiconductor and a semiconductor-on-insulator substrate, a doped semiconductor layer formed over the one of a semiconductor and a...
|
|
|
8002412 |
Projection system employing semiconductor diode
A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module...
|
|
|
7999272 |
Semiconductor light emitting device having patterned substrate
There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first...
|
|
|
7989842 |
Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity
The disclosure relates to a zero-bias heterojunction diode detector with varying impedance. The detector includes a substrate supporting a Schottky structure and an Ohmic contact layer. A metallic...
|
|
|
7985604 |
Method of manufacturing photoelectric conversion device
A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a...
|
|
|
7977666 |
Quantum dot infrared photodetector apparatus
The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device includes a substrate,...
|
|
|
7977703 |
Nitride semiconductor device having a zinc-based substrate
A nitride semiconductor device includes a semiconductor substrate; a first nitride semiconductor layer provided on the semiconductor substrate; a mask layer having opening portions, provided on the...
|
|
|
7968869 |
Optoelectronic architecture having compound conducting substrate
Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate...
|
|
|
7964892 |
Light emitting device
A light emitting device, comprises: a first semiconductor light emitting element; a second semiconductor light emitting element; a first metal member mounting on its top face the first...
|
|
|
7948669 |
Methods of optimizing spur-free dynamic range or gain in electro-absorption modulators
Exemplary methods of maximizing a spur-free dynamic range (SFDR) or a gain of an electro-absorption modulator (EAM) are disclosed. At least one parameter in a set of design parameters for an EAM is...
|
|
|
7939840 |
Light emitting device having light extraction structure and method for manufacturing the same
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor...
|
|
|
7919337 |
Optoelectronic architecture having compound conducting substrate
Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate...
|
|
|
7915641 |
Terahertz electromagnetic wave radiation element and its manufacturing method
The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band...
|
|
|
7911015 |
Infrared detector and infrared solid-state imaging device
An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type...
|
|
|
7910916 |
Multi-junction type solar cell device
In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type...
|
|
|
7902546 |
Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth...
|
|
|
7893425 |
Quantum well structure
A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier...
|
|
|
7888250 |
Method and apparatus for activating compound semiconductor
A compound semiconductor is placed in a reaction vessel (12) of which the inner gas is subjected to replacement with a low-vapor-pressure gas (2) whose equilibrium vapor pressure at the melting...
|
|
|
7851782 |
Photodetector including multiple waveguides
An example photodetector includes a waveguide structure having an active waveguide comprising an absorber for converting photons conveying an optical signal into charge carriers conveying a...
|
|
|
7842957 |
Optical transceiver with reduced height
A transceiver having a light source die, a photodetector die and a substrate is disclosed. The substrate has a first well in which the light source die is mounted and a second well in which the...
|
|
|
7838869 |
Dual band photodetector
A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and...
|
|
|
7838868 |
Optoelectronic architecture having compound conducting substrate
Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate...
|
|
|
7829881 |
Semiconductor light emitting device having roughness and method of fabricating the same
A semiconductor light emitting device including a first electrode contact layer, an active layer formed on the first electrode contact layer, a second electrode contact layer formed on the active...
|
|
|
7822089 |
Semiconductor layer structure with superlattice
The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second...
|
|
|
7813401 |
Electrically pumped low-threshold ultra-small photonic crystal lasers
The invention is a photonic crystal laser including a photonic crystal slab laser cavity including InGaP/InGaAlP crystalline layers, the InGaP/InGaAlP crystalline layers having a relaxed strain at...
|
|
|
7812423 |
Optical device comprising crystalline semiconductor layer and reflective element
An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises...
|