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9040955 Semiconductor device, optical sensor device and semiconductor device manufacturing method  
Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for...
9029833 Graphene on semiconductor detector  
Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a...
9030189 Quantum dot photo-field-effect transistor  
Photo-field-effect transistor devices and associated methods are disclosed in which a photogate, consisting of a quantum dot sensitizing layer, transfers photoelectrons to a semiconductor channel...
9024295 Nanowire photodetector and image sensor with internal gain  
A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial...
9024296 Focal plane array with pixels defined by modulation of surface Fermi energy  
Pixels in a focal plane array are defined by controlled variation of the Fermi energy at the surface of the detector array. Varying the chemical composition of the semiconductor at the detector...
9012924 Spectrum detector including a photodector having a concavo-convex patten  
Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate;...
9012933 Light-emitting diode having a roughened surface  
A light-emitting diode includes a substrate, the substrate including an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the...
9000414 Light emitting diode having heterogeneous protrusion structures  
An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to...
8994005 Vertically correlated clusters of charged quantum dots for optoelectronic devices, and methods of making same  
Devices (e.g., optoelectronic devices such as solar cells and infrared or THz photodetectors) with a nanomaterial having vertically correlated quantum dots with built-in charge (VC Q-BIC) and...
8994004 Hybrid silicon optoelectronic device and method of formation  
Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on...
8981431 Semiconductor light emitting device including GaAs substrate  
A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor...
8969850 Nano-structure arrays for EMR imaging  
An electro-magnetic radiation detector is described. The electro-magnetic radiation detector includes a detector material and a voltage biasing element. The detector material includes a...
8969851 Detection device, photodiode array, and method for manufacturing the same  
The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes...
8963120 Optoelectronic semiconductor component and photonic crystal  
An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or...
8963274 Epitaxial structure for vertically integrated charge transfer gate technology in optoelectronic materials  
A low noise infrared photo detector with a vertically integrated field effect transistor (FET) structure is formed without thermal diffusion. The FET structure includes a high sensitivity photo...
8952354 Multi-junction photovoltaic cell with nanowires  
A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is...
8946678 Room temperature nanowire IR, visible and UV photodetectors  
Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art....
8937298 Structure and method for forming integral nitride light sensors on silicon substrates  
A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common...
8933434 Elemental semiconductor material contact for GaN-based light emitting diodes  
A vertical stack including a p-doped GaN portion, a multi-quantum-well, and an n-doped GaN portion is formed on an insulator substrate. The p-doped GaN portion may be formed above, or below, the...
8927965 Light receiving element and optical device  
A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I...
8927964 Photodetection  
Apparatus and methods are provided. A first apparatus includes: a semiconductor film; and at least one semiconductor nanostructure, including a heterojunction, configured to modulate the...
8921829 Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array  
The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the...
8906779 Solar-powered energy-autonomous silicon-on-insulator device  
A solar-powered autonomous CMOS circuit structure is fabricated with monolithically integrated photovoltaic solar cells. The structure includes a device layer including an integrated circuit and a...
8901412 Photovoltaic cell  
The disclosure relates to multiple quantum well (MQW) structures for intrinsic regions of monolithic photovoltaic junctions within solar cells which are substantially lattice matched to GaAs or...
8884271 Photodetection device  
The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (λ) comprising a multilayer with: a layer (11) of a partially absorbent...
8878250 Electronic device and method for producing electronic device  
Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the...
8872156 Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device  
A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the...
8872159 Graphene on semiconductor detector  
Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a...
8872338 Trace routing within a semiconductor package substrate  
A semiconductor device includes a substrate configured with a plurality of conductive traces. The traces are configured to electrically couple to an integrated circuit (IC) die and at least one of...
8866199 Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer  
An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb...
8860164 Light receiving device  
A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to...
8847204 Germanium electroluminescence device and fabrication method of the same  
This invention provides a germanium electroluminescence device and a fabricating method of the same for using germanium of an indirect bandgap semiconductor without modifying a bandgap as a...
8835906 Sensor, semiconductor wafer, and method of producing semiconductor wafer  
A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor...
8835955 IIIOxNy on single crystal SOI substrate and III n growth platform  
A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer...
8835905 Solar blind ultra violet (UV) detector and fabrication methods of the same  
Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the...
8828764 Coupled asymmetric quantum confinement structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
8822977 Photodetector and method of manufacturing the photodetector  
A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including...
8809877 Semiconductor voltage transformation structure  
A semiconductor voltage transformation structure is provided. The semiconductor voltage transformation structure includes: a first electrode layer ; an electricity-to-light conversion layer formed...
8809672 Nanoneedle plasmonic photodetectors and solar cells  
The present disclosure provides a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor...
8803164 Solid-state image sensing device and semiconductor display device  
To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact. Included are a plurality of first...
8803128 Photodetectors and photovoltaics based on semiconductor nanocrystals  
A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more...
8802481 Photodetector capable of detecting the visible light spectrum  
Apparatuses capable of and techniques for detecting the visible light spectrum are provided.
8785908 Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom  
Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the...
8784703 Method of making highly-confined semiconductor nanocrystals  
A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor...
8779413 Optoelectronic devices with all-inorganic colloidal nanostructured films  
Optoelectronic devices and methods of producing the same are disclosed. Methods may include forming a film from fused all-inorganic colloidal nanostructures, where the nanostructures may include...
8772770 P-type semiconductor material and semiconductor device  
An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type...
8766391 Photodetector array having array of discrete electron repulsive elements  
Photodetector arrays, image sensors, and other apparatus are disclosed. In one aspect, an apparatus may include a surface to receive light, a plurality of photosensitive regions disposed within a...
8759816 Schottky-quantum dot photodetectors and photovoltaics  
A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more...
8759826 Organic electroluminescent element  
The organic electroluminescent element (100) of the present invention comprises, on a substrate (1), electrodes (positive electrode (2) and negative electrode (8)) forming a pair and an organic...
8755240 Optical memory device and method of recording/reproducing information by using the same  
An optical memory device and a method of recording/reproducing information by using the optical memory device. The optical memory device includes a substrate; a first barrier layer formed on the...