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7622703 |
Photodetector having a near field concentration
The field of the invention is that of photodetectors ( 10 ), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for...
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7619240 |
Semiconductor photodetector, device for multispectrum detection of electromagnetic radiation using such a photodetector and method for using such a device
This semiconductor photodetector consists of a diode with at least two heterojunctions comprising two external layers, a first layer with a given kind or type of doping and a second layer with a...
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7612363 |
N-type group III nitride semiconductor stacked layer structure
An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer...
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7608857 |
Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules
A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are...
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7605391 |
Optically coupled resonator
An optically coupled resonator includes a resonator body having at least one resonator sidewall and a laterally offset photodiode formed in a semiconductor substrate adjacent to the resonator body....
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7605390 |
Programmable photolithographic mask based on semiconductor nano-particle optical modulators
Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used...
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7601981 |
Electrically programmable hyper-spectral focal-plane-array
A voltage supply is connected to provide a variable bias voltage to a plurality of optical quantum tunneling photodetectors to thereby vary the spectral response of the photodetectors and thus...
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7589391 |
Semiconductor device with STI and its manufacture
A semiconductor device includes: a silicon substrate with semiconductor elements; an isolation trench formed in the silicon substrate for isolating active regions in the silicon substrate, the...
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7573060 |
Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over...
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7566942 |
Multi-spectral pixel and focal plane array
A novel detection pixel micro-structure allowing the simultaneous and continuous detection of several discrete optical frequencies. A focal plane array comprises a plurality of multi-spectral...
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7564096 |
Scalable power field effect transistor with improved heavy body structure and method of manufacture
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate...
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7560750 |
Solar cell device
In a photoelectric conversion device, in a contact between a p-type semiconductor 3 a and an electrode 2 , an n-type semiconductor 6 of a conductivity type opposite to that of the p-type...
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7557368 |
Semiconductor photodetector
A semiconductor photodetector ( 1 ) for detecting short duration laser light pulses of predetermined wavelength in a light signal ( 2 ) comprises a micro-resonator ( 3 ) of vertical Fabry-Perot...
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7550757 |
Semiconductor laser and method for manufacturing semiconductor laser
A back-surface-electrode type semiconductor laser of GaN-based compound has low electric resistance and high light emitting efficiency, and includes negative electrodes made of Al having a contact...
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7550391 |
Method for forming fine patterns of a semiconductor device using double patterning
A method for forming fine patterns of a semiconductor device is disclosed. The method includes forming an etch film on a substrate, forming a protection film on the etch film, forming a hard mask...
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7541610 |
LED device with re-emitting semiconductor construction and converging optical element
A light source is provided including an LED component having an emitting surface, which may include: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor...
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7538340 |
Low side emitting light source and method of making the same
A light source having a die, a substrate, and a housing is disclosed. The die has a semiconducting light emitting device thereon, the die having a top surface and a bottom surface, light being...
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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7521724 |
Light emitting diode package and process of making the same
A light emitting diode (LED) package and process of making the same includes a silicon-on-insulator (SOI) substrate that is composed of two silicon based materials and an insulation layer...
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7515776 |
Temperature-controlled optical modulator
SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this...
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7508043 |
Sensor for analyzing a sample by utilizing localized plasmon resonance
A sensor chip for use in a sensor for detecting the localized plasmon resonance state of a metal particle surface by light and analyzing properties of a sample present near metal particles. The...
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7504675 |
Phase change memories with improved programming characteristics
A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the...
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7492988 |
Ultra-compact planar AWG circuits and systems
Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
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7473922 |
Infrared detector
At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers...
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7470927 |
Semiconductor chip with coil element over passivation layer
A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing...
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7465663 |
Semiconductor device fabrication method
In fabrication of a semiconductor device which is provided with resistances and MOS transistors on the same substrate, conduction failures of contacts and leaching of wiring metal into a silicon...
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7462859 |
Quantum well design for a coherent, single-photon detector with spin resonant transistor
A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has a first electrode forming an isolation...
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7459719 |
Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer
An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers....
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7446334 |
Electronic device comprising active optical devices with an energy band engineered superlattice
An electronic device may include first and second integrated circuits including respective first and second active optical devices establishing an optical communications link therebetween. The...
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7440157 |
Optically addressed spatial light modulator and method
An optical device has an electrically insulating first barrier layer disposed over a first electrode layer, a photoconductive layer disposed over the first barrier layer, and a carrier confining...
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7432537 |
Avalanche photodiode structure
An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and...
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7432524 |
Integrated circuit comprising an active optical device having an energy band engineered superlattice
An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include...
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7423284 |
Light emitting device, method for making the same, and nitride semiconductor substrate
A light-emitting device includes a GaN substrate; a n-type Al x Ga 1-x N layer on a first main surface side of the GaN substrate; a p-type Al x Ga 1-x N layer positioned further away from the GaN...
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7415185 |
Buried-waveguide-type light receiving element and manufacturing method thereof
A buried-waveguide light detecting element includes an n-type cladding layer on a Fe-InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer,...
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7399988 |
Photodetecting device and method of manufacturing the same
A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots...
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7397067 |
Microdisplay packaging system
Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal...
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7397066 |
Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a...
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7378680 |
Migration enhanced epitaxy fabrication of quantum wells
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced...
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7378151 |
Semiconductor nanoparticle, and a process of manufacturing the same
The invention provides a semiconductor nanoparticle comprising a semiconductor nanoparticle core on the surface of which electron-releasing groups are arranged, the semiconductor nanoparticle...
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7372068 |
QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions
A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch...
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7358525 |
Quantum dots of group IV semiconductor materials
The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell...
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7349603 |
Optical arrangement with two optical inputs/outputs and production methods
Optical arrangement comprising two parallel plates each with a through-hole forming an optical input/output with a given optical axis and one at least partly optical component placed between the...
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7348583 |
Wavelength stabilized light source
An apparatus for producing wavelength stabilized electromagnetic radiation is provided, the apparatus comprising a broadband semiconductor radiation source configured to produce broadband...
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7294848 |
Light-emitting Group IV semiconductor devices
In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first...
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7291858 |
QWIP with tunable spectral response
A tunable QWIP FPA device that is configured for spectral tunability for performing the likes of imaging and spectroscopy is disclosed. A selected bias voltage is applied across the contacts...
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7282798 |
Spontaneous emission enhanced heat transport method and structures for cooling, sensing, and power generation
A method and structure for heat transport, cooling, sensing and power generation is described. A photonic bandgap structure ( 3 ) is employed to enhance emissive heat transport from heat sources...
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7279699 |
Integrated circuit comprising a waveguide having an energy band engineered superlattice
An integrated circuit may include at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers....
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7276724 |
Series interconnected optoelectronic device module assembly
Series interconnection of optoelectronic device modules is disclosed. Each device module includes an active layer disposed between a bottom electrode and a transparent conducting layer. An...
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7271405 |
Intersubband detector with avalanche multiplier region
A photodetector for use at wavelengths of 2 μm and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 μm, integrated with an avalanche multiplier region to...
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7268364 |
Hybrid devices
Hybrid devices, such as optically erasable memory cells and light sensors, and related methods are disclosed. In some embodiments, a device includes a structure capable of converting between a...
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