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8183558 Compound semiconductor device with T-shaped gate electrode  
A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance...
8183556 Extreme high mobility CMOS logic  
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
8178369 Nanoscale multi-junction quantum dot device and fabrication method thereof  
The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line...
8164086 Phase-controlled field effect transistor device and method for manufacturing thereof  
A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region...
8164116 Semiconductor device with hetero semiconductor region and method of manufacturing the same  
A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the...
8154007 Silicon-quantum-dot semiconductor near-infrared photodetector  
A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate...
8129749 Double quantum well structures for transistors  
Double quantum well structures for transistors are generally described. In one example, an apparatus includes a semiconductor substrate, one or more buffer layers coupled to the semiconductor...
8115235 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same  
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device...
8106424 Field effect transistor with a heterostructure  
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made...
8093644 Multiwalled carbon nanotube memory device  
A carbon nanotube based memory device comprises a set of three concentric carbon nanotubes having different diameters. The diameters of the three concentric carbon nanotubes are selected such that...
8026508 Semiconductor device and method of fabricating the same  
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a single electron box including a first quantum dot, a charge storage gate on the first...
8022440 Compound semiconductor epitaxial substrate and manufacturing method thereof  
A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs...
8013407 Magnetic memory device having a recording layer  
There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the...
8003975 Semiconductor integrated circuit device and method for fabricating the same  
A semiconductor integrated circuit device includes: a semiconductor layer having a principal surface on which a source electrode, a drain electrode and a gate electrode are formed and having a...
7973338 Hetero junction field effect transistor and method of fabricating the same  
There is provided a hetero junction field effect transistor including: a first layer of a nitride based, group III-V compound semiconductor; a second layer of a nitride based, group III-V compound...
7973304 III-nitride semiconductor device  
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
7964866 Low power floating body memory cell based on low bandgap material quantum well  
Embodiments of the invention relate to apparatus, system and method for use of a memory cell having improved power consumption characteristics, using a low-bandgap material quantum well structure...
7955881 Method of fabricating quantum well structure  
In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer...
7928425 Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods  
A semiconductor device which may include a semiconductor layer, and a superlattice interface layer therebetween. The superlattice interface layer may include a plurality of stacked groups of...
7924107 Resonant tunneling structure  
A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E2). A second quantum well...
7915640 Heterojunction semiconductor device and method of manufacturing  
A metamorphic buffer layer is formed on a semi-insulating substrate by an epitaxial growth method, a collector layer, a base layer, an emitter layer and an emitter cap layer are sequentially...
7915643 Enhancement mode gallium nitride power devices  
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face...
7902012 High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof  
A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source...
7884393 High electron mobility transistor, field-effect transistor, and epitaxial substrate  
Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor (11) is provided with a supporting substrate...
7858964 Semiconductor device formed in a recrystallized layer  
A semiconductor device includes a substrate that includes a first layer and a recrystallized layer on the first layer. The first layer has a first intrinsic stress and the recrystallized layer has...
7858965 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Nanowire heterostructures  
The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and/or to metal-semiconductor junctions that...
7851783 Method and apparatus for fabricating a carbon nanotube transistor  
A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube...
7847281 Semiconductor device with strain in channel region and its manufacture method  
A first film made of SiGe is formed over a support substrate whose surface layer is made of Si. A gate electrode is formed over a partial area of the first film, and source and drain regions are...
7847282 Vertical tunneling transistor  
The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the...
7829883 Vertical carbon nanotube field effect transistors and arrays  
Carbon nanotube field effect transistors, arrays of carbon nanotube field effect transistors, device structures, and arrays of device structures. A stacked device structure includes a gate...
7825399 Optical device and method of fabricating an optical device  
An optical device comprising: a first active stack of layers comprising an optical cavity,at least one quantum dot located in said cavity;an upper contact provided above said optical cavity;a lower...
7821031 Switch circuit, semiconductor device, and method of manufacturing said semiconductor device  
A switch circuit includes: a first FET that is connected to one of an input terminal and an output terminal, and performs ON/OFF operation under the control of a gate electrode connected to a...
7800097 Semiconductor device including independent active layers and method for fabricating the same  
A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced...
7799647 MOSFET device featuring a superlattice barrier layer and method  
A method of forming a semiconductor structure includes forming a channel layer; forming a superlattice barrier layer overlying the channel layer, and forming a gate dielectric overlying the...
7795622 Compound semiconductor device  
A compound semiconductor device having a transistor structure, includes a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and...
7759673 Data recording system and method for using same  
A storage layer is arranged facing an array of micro-tips. The storage layer includes a plurality of insulated conductive dots designed to store electric charges. Each micro-tip includes a...
7754608 Manufacturing method for the integration of nanostructures into microchips  
State-of-the-art synthesis of carbon nanostructures (25) by chemical vapor deposition involve heating a catalyst material to high temperatures up 700-1000° C. in a furnace and flowing hydrocarbon ...
7755107 Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels  
According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET...
7750338 Dual-SiGe epitaxy for MOS devices  
A semiconductor includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor having at least a portion in the semiconductor substrate and adjacent to the gate...
7745852 Hetero junction field effect transistor and method of fabricating the same  
There is provided a hetero junction field effect transistor including: a first layer of a nitride based, group III-V compound semiconductor; a second layer of a nitride based, group III-V compound...
7741633 Ferroelectric oxide artificial lattice, method for fabricating the same and ferroelectric storage medium for ultrahigh density data storage device  
The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by...
7737467 Nitride semiconductor device with a hole extraction electrode  
A nitride semiconductor device comprises: a laminated body; a first and second main electrode provided in a second and third region, respectively, adjacent to either end of the first region on the...
7728324 Field effect transistor, integrated circuit element, and method for manufacturing the same  
A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel...
7714318 Electronic device including a transistor structure having an active region adjacent to a stressor layer  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7705345 High performance strained silicon FinFETs device and method for forming same  
A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the...
7675056 Germanium phototransistor with floating body  
A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer...
7671358 Plasma implantated impurities in junction region recesses  
A transistor device having a conformal depth of impurities implanted by isotropic ion implantation into etched junction recesses. For example, a conformal depth of arsenic impurities and/or carbon...
7663161 Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same  
A transistor includes: a first semiconductor layer and a second semiconductor layer with a first region and a second region, which are sequentially formed above a substrate; a first p-type...
7659537 Field effect transistor  
A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of t...
7659539 Semiconductor device including a floating gate memory cell with a superlattice channel  
A semiconductor device may include a semiconductor substrate and at least one non-volatile memory cell. The at least one memory cell may include spaced apart source and drain regions, and a...
Matches 1 - 50 out of 295 1 2 3 4 5 6 >