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Match Document Document Title
8183552 Semiconductor memory device  
A semiconductor memory device having a first wiring layer which is provided on a first insulator, and which extends in a first direction, and a non-volatile memory cell which is provided in a...
8183551 Multi-terminal phase change devices  
Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified...
8178405 Resistor random access memory cell device  
A memory cell device has a bottom electrode and a top electrode, a plug of memory material in contact with the bottom electrode, and a cup-shaped conductive member having a rim that contacts the...
8178380 Method for selectively establishing an electrical connection in a multi-terminal phase change device  
Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified...
8179712 Non-volatile memory with metal-polymer bi-layer  
A resistive memory cell that includes a metal-polymer bi-layer proximate a CMOS gate. The memory cell has a substrate having a source contact connected to a source line and a drain contact...
8173987 Integrated circuit 3D phase change memory array and manufacturing method  
A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements...
8173486 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same  
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element...
8173989 Resistive random access memory device and methods of manufacturing and operating the same  
Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first...
8173988 Reduced power consumption phase change memory and methods for forming the same  
Memory cells for reduced power consumption and methods for forming the same are provided. A memory cell has a layer of phase change material. A first portion of the phase change material layer...
8174006 Semiconductor device and manufacturing method thereof and method for writing memory element  
An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device...
8168469 Nonvolatile memory device made of resistance material and method of fabricating the same  
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part...
8168479 Resistance variable memory device and method of fabricating the same  
A method of fabricating a resistance variable device includes forming selection devices on a substrate, forming a conductive layer on the selection devices, patterning the conductive layer in a...
8164079 Phase change memory  
A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern...
8164949 Reducing drift in chalcogenide devices  
Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with...
8159856 Bipolar select device for resistive sense memory  
A resistive sense memory apparatus includes a bipolar select device having a semiconductor substrate, a plurality of collector contacts disposed in a first side of the of the semiconductor...
8158965 Heating center PCRAM structure and methods for making  
Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer comprising a first phase change...
8158964 Schottky diode switch and memory units containing the same  
A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor...
8158963 Programmable resistive RAM and manufacturing method  
Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have...
8153485 Method for fabricating memory  
A method for fabricating a memory is described. Word lines are provided in a first direction. Bit lines are provided in a second direction. A top electrode is formed connecting to a corresponding...
8153471 Method for forming a reduced active area in a phase change memory structure  
A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region...
8149608 Multi-level phase change random access memory device  
A multi-level phase change random access memory device includes a first electrode, a second electrode, and a phase change material disposed between the first electrode and the second electrode. The...
8148711 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element  
A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the...
8148707 Ovonic threshold switch film composition for TSLAGS material  
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the...
8143609 Three-terminal cascade switch for controlling static power consumption in integrated circuits  
A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM...
8143089 Self-align planerized bottom electrode phase change memory and manufacturing method  
A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom...
8138574 PCM with poly-emitter BJT access devices  
A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction...
8139393 Method and apparatus for non-volatile multi-bit memory  
A memory device that selectably exhibits first and second logic levels. A first conductive material has a first surface with a first memory layer formed thereon, and a second conductive material...
8138489 Non-volatile semiconductor storage device and method of manufacturing the same  
A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements...
8134860 Shunted phase change memory  
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may...
8133757 Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current  
A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is...
8134150 Hydrazine-free solution deposition of chalcogenide films  
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
8134138 Programmable metallization memory cell with planarized silver electrode  
Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact...
8134139 Programmable metallization cell with ion buffer layer  
A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting...
8129709 Nonvolatile memory device  
A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select...
8129706 Structures and methods of a bistable resistive random access memory  
Structures and methods to form a bistable resistive random access memory for reducing the amount of heat dissipation from electrodes by confining a heating region in the memory cell device are...
8129704 Non-volatile resistive-switching memories  
Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode....
8129705 Nonvolatile memory device and method of manufacturing the same  
Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements...
8129218 Self-aligned, planar phase change memory elements and devices, systems employing the same and method of forming the same  
Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material...
8124950 Concentric phase change memory element  
A memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase...
8124951 Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof  
A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction...
8124952 Programmable resistive memory cell with filament placement structure  
Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact...
8125021 Non-volatile memory devices including variable resistance material  
A non-volatile memory device includes a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the...
8120003 Nanowire magnetic random access memory  
An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10) with a fixed magnetization direction; a free magnetic layer (20) with a changeable magnetization...
8120007 Phase-change memory device, phase-change channel transistor and memory cell array  
A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory...
8120005 Phase change memory devices and their methods of fabrication  
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A...
8119503 Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby  
Methods of forming integrated circuit devices include forming an etch stop layer on a surface of a semiconductor substrate and forming a first interlayer insulating layer on the etch stop layer....
8120004 Storage node, phase change memory device and methods of operating and fabricating the same  
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower...
8116129 Variable resistance memory device and method of manufacturing the same  
A variable resistance memory device includes a substrate, a plurality of active lines formed on the substrate, are uniformly separated, and extend in a first direction, a plurality of switching...
8115186 Phase change memory cell with reduced switchable volume  
A memory cell is fabricated by forming a dielectric layer and patterning a hole in the dielectric layer. Patterning the hole is accomplished at least in part by contacting the dielectric layer with...
8111384 Method for measuring thermo-optically induced material phase-change response in a multiple layer thin film structure using visible and ultraviolet spectroscopy  
A method and device for facilitating measurement of thermo-optically induced material phase change response in a thin planar or a grating film stack is disclosed. The method may include using...
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