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7629665 Semiconductor component with a channel stop zone  
A semiconductor component has a semiconductor body ( 100 ) having a basic doping and a first and second side, an inner region ( 103 ) arranged between the first and second sides, and an edge region...
7619263 Method of radiation generation and manipulation  
A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma...
7615805 Versatile system for optimizing current gain in bipolar transistor structures  
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure ( 106, 306, 400, 404 ) and the required current density...
7615455 Integrated circuit bipolar transistor  
A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an...
7598539 Heterojunction bipolar transistor and method for making same  
A heterojunction bipolar transistor: The transistor may a collector layer, a base layer and an emitter layer. The transistor may include a dielectric material being disposed over the base layer....
7585706 Method of fabricating a semiconductor device  
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
7573080 Transient suppression semiconductor device  
The HBT-based transient suppression device contains a collector layer of a first conduction type, a base layer of a second conduction type, an emitter layer of the first conduction type, stacked in...
7569872 Bipolar transistors with low parasitic losses  
Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that...
7566921 Silicon germanium emitter  
Disclosed are an improved hetero-junction bipolar transistor (HBT) structure and a method of forming the structure that incorporates a silicon-germanium emitter layer with a graded germanium...
7566919 Method to reduce seedlayer topography in BICMOS process  
A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a structure having a field isolation oxide region ( 12 ) adjacent to an active silicon...
7550786 Compound semiconductor epitaxial substrate  
A compound semiconductor epitaxial substrate including a substrate, and a sub-collector layer, a collector layer, a base layer, an emitter layer and a contact layer(s) formed in this order on the...
7535034 PNP light emitting transistor and method  
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with...
7521733 Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor  
For the integration of an npn bipolar transistor with a hetero bipolar transistor, a placeholder layer is generated in a base region of the hetero bipolar transistor after structuring a collector...
7498620 Integration of phosphorus emitter in an NPN device in a BiCMOS process  
According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium...
7491985 Method of collector formation in BiCMOS technology  
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the collector resistance, Rc, is lowered by providing a buried refractory metal silicide layer underneath...
7482643 Semiconductor device  
A semiconductor device is provided. In one example, a semiconductor device has a D-HBT structure which include a base layer formed from InGaAs and an emitter layer and a collector layer both formed...
7465969 Bipolar transistor and method for fabricating the same  
A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single...
7462892 Semiconductor device  
A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high...
7432539 Imaging method utilizing thyristor-based pixel elements  
An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each...
7391062 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication  
Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or...
7372084 Low power bipolar transistors with low parasitic losses  
Low power double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base...
7317215 SiGe heterojunction bipolar transistor (HBT)  
A heterojunction bipolar transistor is formed in a semiconductor substrate of a first conductivity type including a collector region. A base region is formed on the substrate and an emitter region...
7301181 Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum  
The present invention aims at providing a heterojunction bipolar transistor having improved breakdown voltage on operation for high power output, and includes: a GaAs semiconductor substrate 100 ;...
7297993 Bipolar transistor and fabrication method of the same  
A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base...
7297992 Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS process  
According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium...
7285806 Semiconductor device having an active region formed from group III nitride  
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
7247892 Imaging array utilizing thyristor-based pixel elements  
An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each...
7242038 Heterojunction bipolar transistor  
An n-type InP sub collector layer 2 heavily doped with silicon (Si), an InP collector layer 3, a p-type GaAs (0.51) Sb (0.49) base layer 4 heavily doped with carbon (C), an n-type In (1-y)...
7226835 Versatile system for optimizing current gain in bipolar transistor structures  
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure ( 106, 306, 400, 404 ) and the required current density...
7224005 Heterojunction bipolar transistor structure  
A material made by arranging layers of gallium-arsenide-antimonide (GaAs x Sb 1-x , 0.0≦x≦1.0) and/or indium-gallium-arsenic-nitride (In y Ga 1-y As z N 1-z , 0.0≦y, z≦1.0) in a specific...
7186624 Bipolar transistor with lattice matched base layer  
A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of...
7183576 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD  
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is...
7170112 Graded-base-bandgap bipolar transistor having a constant—bandgap in the base  
A bipolar transistor structure and process technology is described incorporating a emitter, a base, and a collector, with most of the intrinsic base adjacent the collector having a graded energy...
7166866 Edge termination for silicon power devices  
A silicon semiconductor die comprises a heavily doped silicon substrate and an upper layer comprising doped silicon of a first conduction type disposed on the substrate. The upper layer comprises a...
7148557 Bipolar transistor and method for fabricating the same  
A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic...
7135721 Heterojunction bipolar transistor having reduced driving voltage requirements  
The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer...
7132701 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods  
Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is...
7126171 Bipolar transistor  
A bipolar transistor of the present invention comprises a collector layer made of an n-type semiconductor and an emitter layer made of an n-type semiconductor provided on this collector layer. A...
7119382 Heterobipolar transistor and method of fabricating the same  
The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the...
7115918 Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications  
An indium phosphide based double hetero-junction bipolar transistor with an increased collector-base breakdown voltage and a reduced operational knee voltage is provided by manipulating the...
7109567 Semiconductor device and method of manufacturing such device  
The invention relates to a semiconductor device with a heterojunction bipolar, in particular npn, transistor with an emitter region ( 1 ), a base region ( 2 ), and a collector region ( 3 ), which...
7091528 Semiconductor device  
A semiconductor device is provided having an improved breakdown voltage on high power output, the semiconductor device comprising a n-type GaAs subcollector layer, a n-type GaAs intermediate...
7084484 Semiconductor integrated circuit  
A semiconductor integrated circuit including a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions, a first conductive type emitter layer...
7075126 Transistor structure with minimized parasitics and method of fabricating the same  
A transistor having minimized parasitics is provided including an emitter having a recessed extrinsic emitter portion atop an intrinsic emitter portion; a base including an intrinsic base portion...
7067858 Heterojunction bipolar transistor with a base layer that contains bismuth  
A heterojunction bipolar transistor (HBT) with improved characteristics is provided. A III–V compound semiconductor having Bi added thereto is used for a base layer of a GaAs-based or InP-based...
7067857 Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module  
The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the...
7064361 NPN transistor having reduced extrinsic base resistance and improved manufacturability  
According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base...
7038256 Low turn-on voltage, non-electron blocking double HBT structure  
A double heterojunction bipolar transistor structure having desirable properties of a low base-emitter turn-on voltage and no electron blocking discontinuities in the base-collector junction. These...
7038254 Hetero-junction bipolar transistor having a transition layer between the base and the collector  
This invention provides a double hetero-junction bipolar transistor (DHBT) in which a probability of the impact ionization at the interface between the base and the collector is reduced, thereby...
7038250 Semiconductor device suited for a high frequency amplifier  
According to the present invention, there is a provided a semiconductor device having, a collector contact layer made of an n-type GaAs layer; a first collector layer formed on the collector...
Matches 1 - 50 out of 363 1 2 3 4 5 6 7 8 >