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Match Document Document Title
8183612 Optical receiver and method of forming the same  
Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a...
8133788 Method of manufacturing semiconductor device  
An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n...
8129725 Semiconductor sensor  
A semiconductor sensor determines physical and/or chemical properties of a medium, in particular a pH sensor. The semiconductor sensor has an electronic component with a sensitive surface, said...
8124989 Light optoelectronic device and forming method thereof  
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes...
8124983 Power transistor  
A power transistor includes a first terminal, a second terminal and a control terminal. A support layer is formed of a first material having a first bandgap. An active region is formed of a second...
8114730 Shared contact structure, semiconductor device and method of fabricating the semiconductor device  
A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region...
8115280 Four-terminal gate-controlled LVBJTs  
An integrated circuit structure includes a well region of a first conductivity type, an emitter of a second conductivity type opposite the first conductivity type over the well region, a collector...
8110472 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources  
A semiconductor power device is formed on a semiconductor substrate. The semiconductor power device includes a plurality of transistor cells distributed over different areas having varying amount...
8101973 Transistor  
A heterojunction bipolar transistor comprising a substrate;a collector on the substrate;a base layer on the collector;an emitter layer on the base layer;the emitter layer comprising an upper...
8101491 Heterojunction bipolar transistor  
According to an example embodiment, a heterostructure bipolar transistor, HBT, includes shallow trench isolation, STI, structures around a buried collector drift region in contact with a buried...
8093683 Semiconductor device  
The invention is directed to providing a technique for increasing a hold voltage of an electrostatic breakdown protection device having a bipolar transistor structure more than conventional and...
8084786 Silicided base structure for high frequency transistors  
High frequency performance of (e.g., silicon) bipolar devices is improved by reducing the extrinsic base resistance Rbx. Emitter, base and collector regions are formed in or on a semiconductor...
8084313 Method for forming a bipolar junction transistor and a metal oxide semiconductor field effect transistor  
A method for forming BiCMOS integrated circuits and structures formed according to the method. After forming doped wells and gate stacks for the CMOS devices and collector and base regions for the...
RE43042 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns  
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can...
8058124 Method of manufacturing a semiconductor device  
The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown...
8039351 Method of fabricating hetero-junction bipolar transistor (HBT)  
A method of fabricating a hetero-junction bipolar transistor (HBT) is disclosed, where the HBT has a structure incorporating a hetero-junction bipolar structure disposed on a substrate including of...
8039324 Image sensor and method of fabricating the same  
An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a first impurity region formed in the semiconductor substrate spaced from the photodiode, a...
8030167 Varied impurity profile region formation for varying breakdown voltage of devices  
Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a...
8026555 Bipolar/dual FET structure having FETs with isolated channels  
According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET...
8022496 Semiconductor structure and method of manufacture  
A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness,...
8013360 Semiconductor device having a junction of P type pillar region and N type pillar region  
A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the...
8008747 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources  
This invention discloses a semiconductor power device disposed on a semiconductor substrate supporting an epitaxial layer as a drift region composed of an epitaxial layer. The semiconductor power...
8008712 Metallization and its use in, in particular, an IGBT or a diode  
The invention relates to a metallization for an IGBT or a diode. In the case of this metallization, a copper layer (10, 12) having a layer thickness of approximately 50 μm is applied to the front ...
8004013 Polycrystalline thin film bipolar transistors  
A semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material...
7998807 Method for increasing the speed of a light emitting biopolar transistor device  
A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for...
7989845 Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof  
The object of the present invention is to provide a semiconductor device and the manufacturing method thereof which are capable of preventing decrease in the collector breakdown voltage and...
7989844 Semiconductor device and method of manufacturing such a device  
The invention relates to a semiconductor device with a substrate (11) and a semiconductor body (12) with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base...
7985987 Field-effect semiconductor device  
A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the...
7977799 Planar packageless semiconductor structure with via and coplanar contacts  
A semiconductor device includes a substrate having a first side and a second side and an epitaxial layer disposed over the second side. The device also includes a conductive via extending through...
7977708 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
HBT/FET process integration  
A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the...
7977752 Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor  
In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a...
7968914 Multi-component electrical module  
A mechanical construction of an electrical module includes two or more electrical components (102-105). Each of the electrical components has a contact surface (106-109) that is capable of forming...
7969429 Sustain driver, sustain control system, and display device  
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal,...
7960758 Bipolar transistor and radio frequency amplifier circuit  
A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes:...
7952131 Lateral junction varactor with large tuning range  
Large tuning range junction varactor includes first and second junction capacitors coupled in parallel between first and second varactor terminals. First and second plates of the capacitors are...
7939854 Semiconductor device with a bipolar transistor and method of manufacturing such a device  
The invention relates to a semiconductor device with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region...
7939416 Method of making bipolar transistor  
A method of manufacturing a bipolar transistor is compatible with FinFET processing. A collector region (18) is formed and patterned, base contact regions (26) formed on either side, and a gap...
7936022 Method and circuit for down-converting a signal  
Methods, systems, and apparatuses for down-converting an electromagnetic (EM) signal by aliasing the EM signal are described herein. Briefly stated, such methods, systems, and apparatuses operate...
7923752 Thin-film crystal wafer having pn junction and method for fabricating the wafer  
A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched lay...
7923754 Bipolar transistor  
A bipolar transistor (1) comprising a subcollector layer (3), a collector layer (4, 5), a base layer (6) and an emitter layer (7) which are successively built up and having: the subcollector layer...
7923751 Bipolar transistor with a low saturation voltage  
A bipolar transistor with a specific area resistance less than about 500 mOhms·mm2 comprises a first semiconductor region of a first conductivity type defining a collector region (2). A second ...
7911033 Bipolar transistor with depleted emitter  
This invention discloses a novel apparatus of fully depleted emitter so that the built-in potential between emitter and the base becomes lower and the charge storage between the emitter and base...
7910949 Power semiconductor device  
A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an...
7902630 Isolated bipolar transistor  
An isolated bipolar transistor formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench extending downward from the surface of the...
7902633 Longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of the base  
Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the...
7893463 Integrated devices on a common compound semiconductor III-V wafer  
An integrated pair of HBT and FET transistors shares a common compound semiconductor III-V epitaxial layer. The integrated pair of transistors includes a semi-insulating substrate of a compound...
7888199 PNP light emitting transistor and method  
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with...
7890079 RFIC with on-chip multiple band power amplifiers  
A radio frequency integrated circuit (RFIC) includes a silicon substrate, CMOS processing circuitry, and a bipolar power amplifier module. The CMOS processing circuitry is on the silicon substrate....
7880200 Semiconductor device including a free wheeling diode  
A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor...
7880270 Vertical bipolar transistor  
A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged...
Matches 1 - 50 out of 753 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >