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7615805 Versatile system for optimizing current gain in bipolar transistor structures  
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure ( 106, 306, 400, 404 ) and the required current density...
7615457 Method of fabricating self-aligned bipolar transistor having tapered collector  
A method is provided for making a bipolar transistor which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted...
7598539 Heterojunction bipolar transistor and method for making same  
A heterojunction bipolar transistor: The transistor may a collector layer, a base layer and an emitter layer. The transistor may include a dielectric material being disposed over the base layer....
7592648 Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method  
An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter...
7585706 Method of fabricating a semiconductor device  
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
7582536 Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same  
An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an...
7579635 Heterojunction bipolar transistor  
A base layer made of SiGe mixed crystal includes a spacer layer formed in contact with a collector layer with no base impurities diffused therein and an intrinsic base layer formed in contact with...
7576409 Group III-V compound semiconductor based heterojuncton bipolar transistors with various collector profiles on a common wafer  
A wafer comprising at least one high F t HBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector...
7576373 Nitride semiconductor device and method for manufacturing the same  
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a first p-AlGaN layer, a second p-AlGaN layer and a high concentration p-GaN layer are formed in this order on a substrate. A gate...
7576352 Method for producing compound semiconductor wafer and compound semiconductor device  
A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a...
7573080 Transient suppression semiconductor device  
The HBT-based transient suppression device contains a collector layer of a first conduction type, a base layer of a second conduction type, an emitter layer of the first conduction type, stacked in...
7569910 Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer  
A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first...
7569872 Bipolar transistors with low parasitic losses  
Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that...
7566921 Silicon germanium emitter  
Disclosed are an improved hetero-junction bipolar transistor (HBT) structure and a method of forming the structure that incorporates a silicon-germanium emitter layer with a graded germanium...
7566920 Bipolar transistor and power amplifier  
A base mesa finger (an emitter ledge layer 15 , a base layer 16 , and a collector layer 17 ) is interposed between two collector fingers (collector electrodes 13 ), and on the base mesa finger,...
7566919 Method to reduce seedlayer topography in BICMOS process  
A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a structure having a field isolation oxide region ( 12 ) adjacent to an active silicon...
7564075 Semiconductor device  
A semiconductor device provided with an emitter layer having a narrowed base contact portion. The semiconductor device includes a collector layer arranged on a semiconductor substrate. A conductive...
7554202 Semiconductor integrated circuit device  
Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a...
7550787 Varied impurity profile region formation for varying breakdown voltage of devices  
Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a...
7550786 Compound semiconductor epitaxial substrate  
A compound semiconductor epitaxial substrate including a substrate, and a sub-collector layer, a collector layer, a base layer, an emitter layer and a contact layer(s) formed in this order on the...
7547959 Bipolar junction transistor and manufacturing method thereof  
An improved bipolar junction transistor and a method for manufacturing the same are provided. The bipolar junction transistor includes: a buried layer and a high concentration N-type collector...
7547929 Semiconductor HBT MMIC device and semiconductor module  
The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength,...
7545018 High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof  
A high voltage operating field effect transistor has a substrate, a source region and a drain region which are spaced apart from each other in a surface of the substrate, a semiconductor channel...
7541624 Flat profile structures for bipolar transistors  
A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an...
7541249 Process for producing a base connection of a bipolar transistor  
A process for producing a base connection of a bipolar transistor is provided. The process includes the steps of providing a semiconductor structure that can include a three-dimensional sacrificial...
7541231 Integration of SiGe NPN and vertical PNP devices on a substrate  
According to one exemplary embodiment, a method for forming an NPN and a vertical PNP device on a substrate comprises forming an insulating layer over an NPN region and a PNP region of the...
7535041 Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance  
A method for making a semiconductor device which may include providing a substrate having a plurality of spaced apart superlattices therein, and forming source and drain regions in the substrate...
7535034 PNP light emitting transistor and method  
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with...
7531851 Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same  
An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an...
7521772 Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods  
A heterostructure bipolar transistor (HBT) and related methods are disclosed. In one embodiment, the HBT includes a heterostructure bipolar transistor (HBT) including: a substrate; a...
7521734 Semiconductor device with reduced base resistance  
A bipolar transistor is provided in which both the base resistance and the base-collector capacitance are reduced and which is capable of operating at a high cutoff frequency. The semiconductor...
7514727 Active element and switching circuit device  
A unit HBT and a unit FET are arranged to be adjacent to each other through an isolation region and a base electrode of the unit HBT is connected to a source electrode of the unit FET to form a...
7511317 Porous silicon for isolation region formation and related structure  
A method of forming an isolation region using porous silicon and a related structure are disclosed. One embodiment of the method may include forming a collector region; forming a porous silicon...
7508047 Vertical cavity surface emitting laser with integrated electrostatic discharge protection  
An electrostatic discharge (ESD) protected semiconductor device. The semiconductor device is formed as a monolithic structure. The monolithic structure includes a vertical cavity surface emitting...
7504708 High-frequency switching device  
A high-frequency switching device comprises a connecting region having a first conductivity type, and a first barrier region bordering on the connecting region and having a second conductivity...
7498620 Integration of phosphorus emitter in an NPN device in a BiCMOS process  
According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium...
7498619 Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process  
A power electronic device is integrated on a semiconductor substrate of a first type of conductivity. The device includes a plurality of elemental units, and each elemental unit includes a body...
7491985 Method of collector formation in BiCMOS technology  
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the collector resistance, Rc, is lowered by providing a buried refractory metal silicide layer underneath...
7488993 Semiconductor device and method of manufacturing the same  
A semiconductor device, includes: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50...
7482652 Multiwalled carbon nanotube memory device  
A carbon nanotube based memory device comprises a set of three concentric carbon nanotubes having different diameters. The diameters of the three concentric carbon nanotubes are selected such that...
7482643 Semiconductor device  
A semiconductor device is provided. In one example, a semiconductor device has a D-HBT structure which include a base layer formed from InGaAs and an emitter layer and a collector layer both formed...
7482642 Bipolar transistors having controllable temperature coefficient of current gain  
A bipolar transistor which has a base formed of a combination of shallow and deep acceptors species. Specifically, elements such as Indium, Tellurium, and Gallium are deep acceptors in silicon, and...
7476914 Methods to improve the SiGe heterojunction bipolar device performance  
Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The...
7473983 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns  
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can...
7462892 Semiconductor device  
A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high...
7449729 Heterojunction bipolar transistor and method for fabricating the same  
On a high-concentration n-type first sub-collector layer, a high-concentration n-type second sub-collector layer made of a material having a small bandgap, an i-type or low-concentration n-type...
7439558 Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement  
A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base...
7432539 Imaging method utilizing thyristor-based pixel elements  
An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each...
7425754 Structure and method of self-aligned bipolar transistor having tapered collector  
A bipolar transistor is provided which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted sidewall extending...
7420228 Bipolar transistor comprising carbon-doped semiconductor  
A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further...
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