Matches 351 - 400 out of 670 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >
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6384469 Vertical bipolar transistor, in particular with an SiGe heterojunction base, and fabrication process  
The semiconductor region of an intrinsic collector is surrounded with a lateral insulating region. A semi-conducting layer comprising a SiGe heterojunction is partially located between the...
6384433 Voltage variable resistor from HBT epitaxial layers  
A voltage variable resistor formed on heterojunction bipolar transistor epitaxial material includes a current channel made on emitter material. Emitter mesas separated by a recess provide the...
6376867 Heterojunction bipolar transistor with reduced thermal resistance  
The performance of a heterojunction bipolar transistor (HBT) operating at high power is limited by the power that can be dissipated by the device. This, in turn, is limited by the thermal...
6355947 Heterojunction bipolar transistor with band gap graded emitter  
A heterojunction bipolar transistor having reduced parasitic emitter resistance. The bipolar transistor comprises a semi-insulating substrate, a collector contact layer formed on the...
6348704 Semiconductor device having successful schottky characteristics  
Each layer of a three-layer structure composed of semiconductor (collector layer 13 )/metal (base layer 14 )/semiconductor (emitter layer 15 ) is formed from a nitride. By so doing, one...
6346452 Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers  
Process for the formation of epitaxial layers with controlled n-type dopant concentration depth profiles for use in NPN bipolar transistors. The process includes first providing a semiconductor...
6337508 Transistor with a quantum-wave interference layer  
A transistor having an electron quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B in a p-layer of a pn junction structure. The second layer B has...
6337494 Super self-aligned bipolar transistor and method for fabricating thereof  
Disclosed is a super self-aligned heterojunction bipolar transistor which is capable of miniaturizing an element, simplifying the process step thereof without using a trench isolation process and a...
6333236 Semiconductor device and method for manufacturing same  
In a hetero-junction bipolar transistor, an undoped Al 0 .7 Ga 0 .3 As stopper layer 5 having good etching controllability is provided on a base layer 4, thereby forming a base without etching...
6320212 Superlattice fabrication for InAs/GaSb/AISb semiconductor structures  
A semiconductor structure and a method of forming same is disclosed. The method includes forming, on a substrate, an n-doped collector structure of InAs/AlSb materials; forming a base structure on...
6320211 Semiconductor device and electronic device by use of the semiconductor  
A semiconductor device is provided with a collector region having a first material of a first conductivity type. A base region is provided having a second material of the opposite conductivity...
6316795 Silicon-carbon emitter for silicon-germanium heterojunction bipolar transistors  
The invention provides an effective means and apparatus for allowing higher operational frequencies in heterojunction bipolar transistors by trapping silicon interstitial atoms and thereby...
6313488 Bipolar transistor having a low doped drift layer of crystalline SiC  
A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the...
6310368 Semiconductor device and method for fabricating same  
A semiconductor device includes: a semiconductor layered structure including a predetermined mesa portion, formed on a semiconductor substrate; a support member formed so as to bury the mesa...
6285044 InP-based heterojunction bipolar transistor with reduced base-collector capacitance  
A heterojunction bipolar transistor based on the InP/InGaAs materials family and its method of making. An n-type collector layer, principally composed of InP is epitaxially grown on an insulating...
6281530 LPNP utilizing base ballast resistor  
A lateral PNP transistor (LPNP) (102) having the low resistance base buried N+ region (114) removed from below the emitter region (118). This leaves a high resistance n-well (116) below the...
6271098 Heterojunction bipolar transistor and method for producing the same  
A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor β from decreasing. The n-GaAs carrier supply layer...
6255674 Silicon-germanium heterobipolar transistor with a step-wise graded base  
A silicon-germanium heterobipolar transistor has a silicon emitter 1, a silicon-germanium base 2 and a silicon collector 3 such that, starting from the emitter 1, the base 2 includes a change in...
6207976 Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof  
A first surface layer made of compound semiconductor material is defined in a surface area of a substrate. A first intermediate layer is formed on the surface layer, the first intermediate layer...
6208012 Zener zap diode and method of manufacturing the same  
The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain...
6147371 Bipolar transistor and manufacturing method for same  
In an element intrinsic region 12 of a bipolar transistor, an emitter is formed by two emitter layers 31,32 so as to reduce the potential barrier presented to minority carriers, this resulting in a...
6133594 Compound semiconductor device  
A compound semiconductor device having a mesa type heterojunction bipolar transistor comprises a collector layer of first conductivity type having a collector breakdown voltage of a predetermined...
6118136 Superlatticed negative-differential-resistance functional transistor  
The invention is to develop a high-speed low power consumption resonant tunneling element--a superlatticed negative-differential-resistance (NDR) functional transistor. The proposed element...
6087684 Bipolar transistor  
A heterojunction bipolar transistor (HBT) has shortened electron transport time through collector region over wide range of biased conditions. The HBT is expected to exhibit enhanced high frequency...
6087721 Semiconductor device with a high-frequency bipolar transistor on an insulating substrate  
A bipolar transistor (3) is provided with a first main surface (4) in contact with a conductive mounting surface (2), and with an opposed second main surface (12) having connection pads (5, 6, 40)...
6087683 Silicon germanium heterostructure bipolar transistor with indium doped base  
The present invention provides, in one embodiment, a method of fabricating a heterostructure bipolar transistor. This particular embodiment comprises forming a n-type doped region in a...
6081003 Heterojunction bipolar transistor with ballast resistor  
A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor β from decreasing. The n-GaAs carrier supply layer...
6060744 Semiconductor device with a main current cell region and a current detecting cell region  
In a current detecting cell of a MOS-type semiconductor device with a current detection function, the area of the contact portions of source regions which contact a current detecting electrode is...
6057567 Integrated circuit and method  
Heterojunction bipolar transistors (130) with bases (138) including an etch stop element are disclosed. The preferred embodiment devices have Al x Ga 1 -x As emitters (140) and GaAs collectors...
6049098 Bipolar transistor having an emitter region formed of silicon carbide  
A bipolar transistor comprises a collector region composed of an N type silicon, a base region composed of a P type silicon film in contact with the N type collector region and a P type SiC film in...
6046486 Heterojunction bipoplar mixer circuitry  
Mixer circuitry having a semiconductor body formed therein mixer circuitry having an oscillator having a heterojunction bipolar transistor and a mixer having a Schottky diode. The heterojunction...
6043520 III-V heterojunction bipolar transistor having a GaAs emitter ballast  
A hetero-junction bipolar transistor having high reliability wherein a ballast resistance is exactly controlled and deterioration in current stability is eliminated. A GaAs ballast resistor layer...
6037616 Bipolar transistor having base contact layer in contact with lower surface of base layer  
In a bipolar transistor including a semi-insulating substrate, a collector layer formed on the semi-insulating substrate and a base layer formed on the collector layer, a base contact layer is in...
6034382 Current-driven semiconductor device and integrated circuit  
A current-driven-type semiconductor device including a substrate, an active part formed on the substrate, and a conductive semiconductor layer formed on the active part as a current path to the...
6034383 High power density microwave HBT with uniform signal distribution  
A heterojunction bipolar transistor power cell consisting of a plurality of parallel connected sub-cells arranged in a chevron type of configuration wherein the sub-cells are staggered relative to...
6034413 High speed biCMOS gate power for power MOSFETs incorporating improved injection immunity  
A circuit and method for implementing a MOSFET gate driver. Two bipolar NPN transistors (Q1, Q2), constructed to achieve rail-to-rail swings when driving a capacitive load (23) by overlapping their...
6031256 Wide voltage operation regime double heterojunction bipolar transistor  
Structure of a wide voltage operation regime double heterojunction bipolar transistor, specifically a modified InGaP/GaAs double heterojunction bipolar transistor featuring a very broad...
6031255 Bipolar transistor stabilized with electrical insulating elements  
A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor...
6028329 Bipolar junction transistor device and a method of fabricating the same  
A novel bipolar junction transistor device and a method of fabricating the same are proposed. In accordance with the present invention, a p-type silicon substrate is vertically all-through...
5994725 MOSFET having Schottky gate and bipolar device  
A semiconductor device having a Schottky gate and a bipolar device. A semiconductor substrate has a surface layer in ohmic contact with the conductor and the deeper layer in Schottky contact with...
5977572 Low offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistor  
The present provides two low offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistors which include AlInAs heterostructure-confinement and AlInAs/GaInAs superlattice-confinement...
5962879 Super self-aligned bipolar transistor  
The invention relates to a method for manufacturing a super self-aligned heterojunction bipolar transistor which is capable of miniaturizing an element, simplifying the process step thereof by...
5962864 Gated resonant tunneling device and fabricating method thereof  
A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of...
5949097 Semiconductor device, method for manufacturing same, communication system and electric circuit system  
The present invention relates to a contact structure not only for a semiconductor device having a hetero-junction bipolar transistor or a hetero-insulated gate field effect transistor but also for...
5939739 Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors  
The present invention relates to a heterojunction bipolar transistor structure having a device mesa 401 with a collector region 402, a base region 403 and an emitter region 404. An emitter metal...
5939729 Optical controlled resonant tunneling diode  
The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a...
5939738 Low base-resistance bipolar transistor  
A method for fabricating a bipolar transistor comprising the steps of: implanting portions 320 of a semiconductor material structure with ions to render the portions semi-insulating; forming an...
5930636 Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes  
A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a...
5923057 Bipolar semiconductor device and method for fabricating the same  
A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so...
5917195 Phonon resonator and method for its production  
A structure of periodically varying density is provided, that acts as a phonon resonator for phonons capable of participating in phonon-electron interactions. Specifically, a phonon resonator that...
Matches 351 - 400 out of 670 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >