Matches 301 - 350 out of 671 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >
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6611008 Heterojunction bipolar transistor capable of restraining the conductivity modulation of the ballast layer  
A heterojunction bipolar transistor has a stack comprised of a base layer, an emitter layer and a ballast layer made of AlGaAs. The emitter layer is comprised of a single layer or a multiplicity of...
6600179 Power amplifier with base and collector straps  
A semiconductor amplifier includes collector straps that form air bridges over a set of transistors and make parallel electrical connections between the collectors of the transistor and collector...
6597057 Epitaxial growth in a silicon-germanium semiconductor device with reduced contamination  
A structure includes an etch stop layer and a cap layer. The etch stop layer is situated over a first oxide isolation region and a second oxide isolation region in a wafer. A window is situated in...
6593604 Heterojunction bipolar transistor, manufacturing method therefor, and communication device therewith  
An emitter of a heterojunction bipolar transistor has a double-layer protrusion formed of a first emitter layer and a second emitter layer and protruded outside an external base region. The...
6586782 Transistor layout having a heat dissipative emitter  
Various embodiments of a novel transistor layout having improved electrical and heat dissipation characteristics are disclosed. Several embodiments include various intrinsic components contoured to...
6579773 Transistor device and fabrication method thereof  
In the fabrication of a transistor device, particularly a low-voltage high-frequency transistor for use in mobile telecommunications, a method for improving the transistor performance and the...
6577200 High-frequency semiconductor device  
A high-frequency semiconductor amplifier circuit minimizing deterioration of high-frequency characteristics and attaining high thermal stability. A driver stage of a power amplifier has a...
6573539 Heterojunction bipolar transistor with silicon-germanium base  
A silicon-germanium base capable of use in heterojunction bipolar transistor includes a silicon substrate having a mesa surrounded by a trench. The mesa has a top surface and a silicon-germanium...
6566694 Heterojunction bipolar transferred electron tetrode  
A heterojunction bipolar transferred electron tetrode has an anode region providing a first terminal, an active region in which Gunn-Hilsum oscillations are generated, a base region providing a...
6566693 Reduced capacitance scaled HBT using a separate base post layer  
High-speed, low capacitance heterojunction bipolar transistors (HBTs) and a method for their fabrication are disclosed. The devices are fabricated by a manufacturable process which moves patterning...
6563145 Methods and apparatus for a composite collector double heterojunction bipolar transistor  
A compound collector double heterojunction bipolar transistor (CCHBT) incorporates a collector comprising two layers: a wide bandgap collector region (e.g., GaAs), and a narrow bandgap collector...
6563147 HBT with a SiGe base region having a predetermined Ge content profile  
A method of manufacturing a hetero-junction bipolar transistor (HBT) which is suitable for high frequency operation. In the method, a first conductive layer and a first insulation layer are formed...
6559482 III-N compound semiconductor bipolar transistor structure and method of manufacture  
A III-N compound semiconductor bipolar transistor structure and method of manufacture. An epitaxial layer structure is formed over a substrate. The epitaxial layer structure includes a nucleation...
6555915 Integrated circuit having interconnect to a substrate and method therefor  
A contact between a source/drain and a gate is made by making a selected portion of the gate dielectric conductive by an implant into that selected portion of the gate dielectric. The gate material...
6555852 Bipolar transistor having an emitter comprised of a semi-insulating material  
The present invention provides a bipolar transistor having a collector located in a semiconductor substrate having a given bandgap, and a base in contact with the collector. The base has a bandgap...
6552374 Method of manufacturing bipolar device and structure thereof  
Disclosed are a method for forming a base layer by epitaxial growth technology of a heterojunction bipolar device and a structure of the bipolar device manufactured by the method. The method...
6548838 Field-effect transistor, bipolar transistor, and methods of fabricating the same  
A field-effect transistor of the present invention has first semiconductor layers disposed in at least two regions located above a substrate and spaced apart in a direction parallel to a substrate...
6545340 Semiconductor device  
A semiconductor device of the invention in the form of a superlattice-heterojunction bipolar transistor (SL-HBT) 10 incorporates a superlattice region 16 within an emitter mesa 21. The...
6534791 Epitaxial aluminium-gallium nitride semiconductor substrate  
A nitride semiconductor epitaxial substrate includes a low-temperature-deposited buffer layer, the composition of which is Al x Ga 1−x N, where 0≦x≦1, and a single crystalline layer, the...
6534802 Method for reducing base to collector capacitance and related structure  
According to a disclosed embodiment, a transistor region comprising a collector region is opened adjacent to an oxide region. The oxide region may be, for example, a field oxide region....
6531720 Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors  
A method for forming a heterojunction bipolar transistor includes forming two sets of spacers on the sides of an emitter pedestal. After the first set of spacers is formed, first extrinsic base...
6531722 Bipolar transistor  
The present invention relates to a hetero-bipolar transistor. This transistor comprises a semi-insulating InP substrate, a buffer layer on the substrate, a sub-collector layer on the buffer layer,...
6531748 Semiconductor power component with a reduced parasitic bipolar transistor  
A semiconductor power component has a MOS structure in which the source region is formed of a material whose band gap is smaller than the band gap of the material of the channel region. This...
6531721 Structure for a heterojunction bipolar transistor  
According to one disclosed embodiment, a heavily doped subcollector is formed. Subsequently, a collector is fabricated over the heavily-doped subcollector, wherein the collector comprises a...
6528828 Differential negative resistance HBT and process for fabricating the same  
A differential negative resistance element includes a heavily doped GaAs layer interposed between a collector layer of lightly doped GaAs and an emitter layer of heavily doped AlGaAs, is shared...
6528829 Integrated circuit structure having a charge injection barrier  
The invention relates to an integrated circuit structure that includes a substrate wafer having an active device layer disposed on a surface of the substrate wafer and having an electrically...
6525349 Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD  
A heterojunction bipolar transistor (HBT), having a substrate formed of indium phosphide (InP), and having emitter, base and collector layers formed over the substrate such that the base layer is...
6525388 Compound semiconductor device having diode connected between emitter and collector of bipolar transistor  
A heterojunction bipolartansistor is fabricated on a semi-insulating substrate, and has a mesa structure, wherein an emitter signal line of titanium-platinum-gold alloy is held in contact with the...
6521974 Bipolar transistor and manufacturing method thereof  
A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made...
6521973 Semiconductor device with integrated power transistor and suppression diode  
A semiconductor device comprises a semiconductor body ( 10 ) in and on which a power transistor (T; 1, 2, 3 ) and a suppression diode (D; 100 ) are integrated. A diode junction ( 40; 40′ ) is...
6506659 High performance bipolar transistor  
In one disclosed embodiment, a collector is deposited and a base is grown on the collector, for example, by epitaxially depositing either silicon or silicon-germanium. An emitter is fabricated on...
6507089 Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device  
A semiconductor device is provided with a plurality of hetero junction bipolar transistors arranged in a specified direction. Also, the semiconductor device comprises emitter wiring connected to...
6495869 Method of manufacturing a double-heterojunction bipolar transistor on III-V material  
The invention relates to a method of manufacturing a double heterojunction bipolar transistor ( 1 ) comprising successively at least one sub-collector layer, a collector layer, a base layer and a...
6492664 Heterojunction bipolar transistor with reduced offset voltage  
A heterojunction bipolar transistor comprises a collector layer, a base layer, and an emitter layer stacked sequentially. The base layer comprises a first base layer joined to the collector layer...
6465870 ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region  
A ESD (electrostatic discharge) robust SiGe bipolar transistor is provided which comprises a substrate of a first conductivity type; a doped subcollector region of a second conductivity type formed...
6465804 High power bipolar transistor with emitter current density limiter  
A heterojunction bipolar transistor (HBT) having an emitter structure capable of reducing the current crowding effect and preventing thermal instabilities is disclosed, wherein a negative...
6465813 Carbon nanotube device  
Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n−m≠3l) nanotubes,...
6462362 Heterojunction bipolar transistor having prevention layer between base and emitter  
A bipolar transistor is disclosed, that comprises a collector layer of first conduction type, a base layer of second conduction type, formed on the collector layer, a prevention layer, formed on...
6459104 Method for fabricating lateral PNP heterojunction bipolar transistor and related structure  
According to one embodiment, a dielectric layer is deposited over an n-well. For example, the dielectric layer can be silicon dioxide, silicon nitride or a low-k dielectric. Subsequently, the...
6459103 Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics  
An InP/InGaAlAs heterojunction bipolar transistor with the characteristics of amplification and negative-differential-resistance phenomenon is presented in the invention. The 3-terminal...
6445058 Bipolar junction transistor incorporating integral field plate  
A semiconductor process is disclosed which forms a field plate structure that integrally contacts an emitter region of a bipolar junction transistor by construction, without intervening...
6437376 Heterojunction bipolar transistor (HBT) with three-dimensional base contact  
A Heterojunction Bipolar Transistor (HBT) is provided which is formed by selectively depositing silicon germanium (SiGe) in a base region subsequent to the deposition of the base electrodes....
6423990 Vertical heterojunction bipolar transistor  
A heterojunction bipolar transistor ( 20, 60 ) is provided with a silicon (Si) base region ( 34, 74 ) that forms a semiconductor junction with a multilayer emitter ( 38 ) having a thin gallium...
6417058 SiGe/poly for low resistance extrinsic base npn transistor  
A low resistance bipolar transistor extrinsic base and method of manufacture. A layer of heavily doped polysilicon is deposited over an oxide layer on an npn silicon substrate and a window is...
6410945 Heterojunction bipolar transistor and its manufacturing process  
A heterojunction bipolar transistor having a ballast resistance layer between an AlGaAs emitter layer and an emitter electrode, wherein the ballast resistance layer comprises n-Al x Ga 1−X As,...
6410396 Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications  
Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation,...
6399971 Semiconductor device and method for fabricating the same  
The semiconductor device comprises a collector layer 14 ; a base layer 16 of a carbon-doped Ga x In 1−x As y Sb 1−y layer having one surface connected to the collector layer 14 ; an...
6399969 Heterojunction bipolar transistor including collector/base heterojunction achieving high operation efficiency  
A hetero junction bipolar transistor has an emitter region, a base region, a collector region and a subcollector region which are serially arranged. The collector region includes a plurality of...
6396107 Trench-defined silicon germanium ESD diode network  
A silicon-germanium ESD element comprises a substrate of a first dopant type coupled to a first voltage terminal and a first diode-configured element. The first diode-configured element has a...
6392262 Compound semiconductor device having low-resistive ohmic contact electrode and process for producing ohmic electrode  
An indium layer sandwiched between palladium layers are treated with heat so that the indium is diffused into a p-type gallium arsenide, and is alloyed with the palladium, whereby the p-type indium...
Matches 301 - 350 out of 671 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >