Matches 251 - 300 out of 671 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >
Match Document Document Title
6759674 Band gap compensated HBT  
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of a first material at a first depth, where the first material impedes the...
6759694 Semiconductor phototransistor  
A phototransistor structure is disclosed. A sidewall is grown on the collector side and under the base. The surface of the sidewall is formed with a sidewall contact. When the contact is connected...
6759697 Heterojunction bipolar transistor  
The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer...
6756278 Lateral heterojunction bipolar transistor and method of fabricating the same  
A lateral heterojunction bipolar transistor comprises a first semiconductor layer in a mesa configuration disposed on an insulating layer, a second semiconductor layer formed by epitaxial growth on...
6756604 Si-Ge base heterojunction bipolar device  
A bipolar transistor is disclosed that is produced using a sacrificial mesa disposed over a layer of Si and SiGe in order to prevent a polysilicon covering layer from forming over a predetermined...
6756615 Heterojunction bipolar transistor and its manufacturing method  
A heterojunction bipolar transistor comprises, an emitter made of a first compound semiconductor of a first conductivity type; a base made of a second compound semiconductor of a second...
6753592 Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing  
A dual polysilicon emitter, complementary output is provided which utilizes a buried power buss. While providing these advantages, the process is not complicated. The process has the speed...
6750482 Highly conductive semiconductor layer having two or more impurities  
The present invention provides a highly doped semiconductor layer. More specifically, the present invention provides a semiconductor layer that includes at least two impurities. Each impurity is...
6744079 Optimized blocking impurity placement for SiGe HBTs  
A high performance SiGe HBT that has a SiGe layer with a peak Ge concentration of at least approximately 20% and a boron-doped base region formed therein having a thickness. The base region...
6744080 Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor  
Transistor and method of manufacturing a bipolar transistor of the double-polysilicon, heterojunction-base type, in which a semiconducting layer with SiGe heterojunction is formed by non-selective...
6740913 MOS transistor using mechanical stress to control short channel effects  
A transistor using mechanical stress to alter carrier mobility. Voids are formed in one or more of the source, drain, channel or gate regions to introduce tensile or compressive stress to improve...
6740914 FET circuit block with reduced self-heating  
A field effect transistor (FET) is disclosed that includes a heat spreader adapted to reduce the thermal resistance and channel operating temperature of a field effect transistor used in a circuit...
6740560 Bipolar transistor and method for producing same  
The aim of the invention is to provide for a bipolar transistor and a method for producing the same. Said bipolar transistor should have minimal base-emitter capacities and very good high frequency...
6734470 Laterally varying multiple diodes  
A method for producing laterally varying multiple diodes and their device embodiment are presented herein. As demonstrated, multiple resonant tunneling diodes are fabricated together utilizing a...
6727153 Superlattice fabrication for InAs/GaSb/AlSb semiconductor structures  
A semiconductor structure and a method of forming same is disclosed. The method includes forming, on a substrate, an n-doped collector structure of InAs/AlSb materials; forming a base structure on...
6727530 Integrated photodetector and heterojunction bipolar transistors  
The speed at which optical networking devices operate is increased with the present invention with integrated circuits that provide both optical and electronic functions. The present invention...
6724020 Semiconductor device and power amplifier using the same  
A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which...
6717220 Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant  
A structure and a process for manufacturing semiconductor devices with improved ESD protection for high voltage applications is described. A thick field gate oxide N channel field effect transistor...
6713790 Semiconductor device and method for fabricating the same  
In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device...
6703647 Triple base bipolar phototransistor  
A high gain phototransistor uses lateral and vertical transistor structures and a triple base. The base regions of two vertical structures are in the bulk of a semiconductor substrate while the...
6699741 Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region  
A high frequency bipolar transistor that has a silicon germanium intrinsic base region is formed in a semiconductor fabrication process that forms the extrinsic base regions after the intrinsic...
6686647 Gunn diode and method of manufacturing the same  
Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the...
6683333 Fabrication of electronic circuit elements using unpatterned semiconductor layers  
A thin-film transistor array comprises at least first and second transistors. Each of the first and second transistors include a shared silicon layer, i.e., an active layer. The shared...
6683332 Heterojunction bipolar transistor and manufacturing method therefor including electrode alloyed reaction layers  
A Pt alloyed reaction layer is formed under a base ohmic electrode. This alloyed reaction layer extends through a base protective layer so as to reach a base layer. Besides, a Pt alloyed reaction...
6683366 Bipolar transistor and related structure  
According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor (“HBT”), comprises a base having a top surface. The HBT further comprises a first inner...
6680497 Interstitial diffusion barrier  
A heterojunction bipolar transistor is doped in the sub-collector layer ( 20 ) with phosphorus ( 24 ). The presence of the phosphorus causes any interstitial gallium ( 22 ) to be bonded ( 26 ) to...
6680494 Ultra high speed heterojunction bipolar transistor having a cantilevered base  
Reduction in the base to collector capacitance of a heterojunction bipolar transistor, and, improved high frequency performance is achieved using existing materials and processes by undercutting...
6677624 Carbon nanotubes transistor  
Transistor, is disclosed, including a base having a bundle of (n,n) nanotubes, and an emitter and a collector connected to opposite sides of the base each having (n,m, n−m≠3 l) nanotubes,...
6677625 Bipolar transistor  
The invention provides a bipolar transistor attaining large MSG and a method of fabricating the same. The bipolar transistor of this invention includes a collector layer; abase layer deposited on...
6674104 Bipolar transistor  
A bipolar transistor having base and collector regions of narrow bandgap semiconductor material and a minority-carrier excluding base contact has a base doping level greater than 10 17 cm −3 ....
6674103 HBT with nitrogen-containing current blocking base collector interface and method for current blocking  
An improved HBT of the invention reduces the current blocking effect at the base-collector interface. Nitrogen is incorporated at the base-collector interface in an amount sufficient to reduce the...
6670653 InP collector InGaAsSb base DHBT device and method of forming same  
A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected In x Ga 1−x As y...
6667489 Heterojunction bipolar transistor and method for production thereof  
A high-speed heterojunction bipolar transistor in a large injection of electrons from the emitter and a method for production thereof. In a typical example of the SiGeC heterojunction bipolar...
6667498 Nitride semiconductor stack and its semiconductor device  
A transistor structure is implemented which can achieve high current gain by causing electrons injected from an emitter to reach a collector. An InGaN graded layer, which is interposed between a...
6664575 GaInP stacked layer structure and field-effect transistor manufactured using the same  
A GaInP stacked layer structure 1 having a GaAs single crystal substrate 10 having stacked on the surface thereof at least a buffer layer 11 , an electron channel layer 12 composed of Ga X...
6664574 Heterojunction semiconductor device and method of manufacturing  
A semiconductor component ( 100 ) includes a semiconductor substrate ( 16 ) that is formed with trench ( 27 ). A semiconductor layer ( 20 ) is formed in the trench for coupling a control signal (V...
6664610 Bipolar transistor and the method of manufacturing the same  
This invention provides a new configuration and manufacturing method of the hetero-junction bipolar transistor. According to the invention, the HBT comprises a semi-insulating InP substrate, a...
6661075 Abrupt pn junction diode formed using chemical vapor deposition processing  
A pn junction diode ( 250 ) having its metallurgical junction of the oppositely-doped regions ( 254, 256 ) coincident with the surface WS of an electrically-doped wafer W and a method of forming...
6661037 Low emitter resistance contacts to GaAs high speed HBT  
A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact...
6661038 Semiconductor device and method of producing the same  
A semiconductor device of the present invention includes a systematic structure layer of first conductivity type and having a systematically arranged structure. The systematic structure layer is...
6657242 Trench-isolated bipolar devices  
In order to produce an electrical connection to an inner layer such as a bottom diffusion ( 103 ), which has a good electrical conductivity and is located inside a bipolar semiconductor device...
6653668 Radio frequency modules and modules for moving target detection  
It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the...
6653666 J-FET semiconductor configuration  
J-FET having a first semiconductor region ( 2, 3 ), which comprises a first contact ( 7 ) with a highly doped contact layer ( 8 ) serving as a source disposed between two second contacts ( 9 )...
6653669 Device for the adjustment of circuits after packaging  
An integrated circuit includes an adjustment resistor, and at least one control transistor connected to a first voltage reference. An adjustment element is connected in parallel with the adjustment...
6642553 Bipolar transistor and method for producing same  
The invention relates to a bipolar transistor and a method for producing same. The aim of the invention is to provide a bipolar transistor and a method for producing same, which during the use of a...
6639256 Structure for eliminating collector-base band gap discontinuity in an HBT  
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth...
6639257 Hetero-junction bipolar transistor having a dummy electrode  
A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a...
6633069 Semiconductor device  
A bipolar transistor has metal silicide as a base lead-out electrode instead of conventional polysilicon, and the metal silicide film extends to an edge of an etching stopper layer, to reduce an...
6627925 Transistor having a novel layout and an emitter having more than one feed point  
A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the...
6617619 Structure for a selective epitaxial HBT emitter  
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter...
Matches 251 - 300 out of 671 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >