Matches 101 - 150 out of 669 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >
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7226835 Versatile system for optimizing current gain in bipolar transistor structures  
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure ( 106, 306, 400, 404 ) and the required current density...
7224005 Heterojunction bipolar transistor structure  
A material made by arranging layers of gallium-arsenide-antimonide (GaAs x Sb 1-x , 0.0≦x≦1.0) and/or indium-gallium-arsenic-nitride (In y Ga 1-y As z N 1-z , 0.0≦y, z≦1.0) in a specific...
7214593 Passivation for improved bipolar yield  
A SiGe heterojunction bipolar transistor including at least an emitter formed on a SiGe base region wherein the sidewalls of the emitter are protected by a conformal passivation layer. The...
7214973 Semiconductor device and method of manufacturing the same  
A bipolar type semiconductor device capable of attaining high current gain and high cut-off frequency and performing a satisfactory transistor operation also in a high current region while...
7208778 Power amplifier having high heat dissipation  
A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least...
7205587 Semiconductor device and method of producing the same  
A method of producing a semiconductor device includes the steps of: preparing a double SOI substrate, forming a deep trench, filling the deep trench, forming an opening, forming a cavity,...
7202514 Self aligned compact bipolar junction transistor layout and method of making same  
The invention relates to a process of forming a bipolar junction transistor (BJT) that includes forming a topology over a substrate. Thereafter, a spacer is formed at the topology. A base layer is...
7202136 Silicon germanium heterojunction bipolar transistor with carbon incorporation  
A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is...
7186624 Bipolar transistor with lattice matched base layer  
A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of...
7183576 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD  
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is...
7180159 Bipolar transistor having base over buried insulating and polycrystalline regions  
A bipolar transistor in a monocrystalline semiconductor substrate ( 101 ), which has a first conductivity type and includes a surface layer ( 102 ) of the opposite conductivity type. The transistor...
7173293 Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation  
A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum...
7170112 Graded-base-bandgap bipolar transistor having a constant—bandgap in the base  
A bipolar transistor structure and process technology is described incorporating a emitter, a base, and a collector, with most of the intrinsic base adjacent the collector having a graded energy...
7170113 Semiconductor device and method of manufacturing the same  
An aspect of a semiconductor device includes: a collector layer of first conductive type formed on a semiconductor substrate; a graft base layer of second conductive type formed in a surface region...
7157749 Bipolar transistor with a GaAs substrate and a SiGe base or collector  
A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a...
7151035 Semiconductor device and manufacturing method thereof  
A sidewall-insulation film 9 is provided on a side surface of a first opening portion 8 a formed in a base extraction electrode 5 B of a hetero-junction bipolar transistor, and a portion of...
7144787 Methods to improve the SiGe heterojunction bipolar device performance  
Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The...
7138668 Heterojunction diode with reduced leakage current  
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity...
7138669 Silicon germanium heterojunction bipolar transistor with carbon incorporation  
A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is...
7135721 Heterojunction bipolar transistor having reduced driving voltage requirements  
The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer...
7132700 SiGe layer having small poly grains  
A disclosed embodiment is a method for fabricating a structure in a semiconductor die, the method comprising depositing a silicon buffer layer over a single crystalline region and at least one...
7132344 Super self-aligned BJT with base shorted field plate and method of fabricating  
A bipolar junction transistor (BJT) structure and fabrication method are provided in which a doped polysilicon filled trench is utilized to form both the extrinsic base contact region and a...
7129530 Semiconductor device  
A high capacity semiconductor device having a narrowed emitter layer. The semiconductor device includes a collector layer formed on a semiconductor substrate. An SiGe alloy layer is formed on the...
7129779 Semiconductor device with floating block  
A band gap circuit using NPN transistors ( 10, 12 ) having collectors connected to a power source voltage is employed, and transistor active regions of the NPN transistors ( 10, 12 ) and...
7126171 Bipolar transistor  
A bipolar transistor of the present invention comprises a collector layer made of an n-type semiconductor and an emitter layer made of an n-type semiconductor provided on this collector layer. A...
7119382 Heterobipolar transistor and method of fabricating the same  
The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the...
7115898 Organic semiconductor device, RF modulation circuit, and IC card  
A pair of electrodes are provided to sandwich an organic semiconductor layer. A lead-out electrode is provided to each of the organic semiconductor layer and the two electrodes constituting the...
7115466 Bipolar transistor with graded base layer  
A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of...
7109567 Semiconductor device and method of manufacturing such device  
The invention relates to a semiconductor device with a heterojunction bipolar, in particular npn, transistor with an emitter region ( 1 ), a base region ( 2 ), and a collector region ( 3 ), which...
7109534 Transistor and electronic device  
The invention provides a transistor capable of achieving a higher speed although its construction is easy to manufacture without requiring wiring to intersect three-dimensionally even if unit...
7105869 Multi-chip package  
A multi-chip package is provided. A first die pad has a first chip attaching surface and a first unoccupied surface. A second die pad has a second chip attaching surface and a second unoccupied...
7098394 Method and apparatus for powering circuitry with on-chip solar cells within a common substrate  
A system and method for providing power to a light-powered transponder. In order to create a sufficient voltage differential, two different photovoltaic elements are used. The photovoltaic elements...
7098113 Method and system for providing a power lateral PNP transistor using a buried power buss  
A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer; an emitter region between the first and second...
7091528 Semiconductor device  
A semiconductor device is provided having an improved breakdown voltage on high power output, the semiconductor device comprising a n-type GaAs subcollector layer, a n-type GaAs intermediate...
7087940 Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer  
A bipolar transistor structure and method of making the bipolar transistor are provided. The bipolar transistor includes a collector region, an intrinsic base layer overlying the collector region,...
7084484 Semiconductor integrated circuit  
A semiconductor integrated circuit including a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions, a first conductive type emitter layer...
7081799 Bipolar transistor, oscillation circuit, and voltage controlled oscillator  
There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is...
7078744 Transistor emitter having alternating undoped and doped layers  
A disclosed embodiment is a method for fabricating an emitter structure, comprising a step of conformally depositing an undoped polysilicon layer in an emitter window opening and over a base. Next,...
7075156 Collector structure for electrostatic discharge protection circuits  
Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first...
7071500 Semiconductor device and manufacturing method for the same  
A bipolar semiconductor device including a collector layer covered at a portion of an outer periphery thereof with an insulating film and having a shape extending in an upper direction and a...
7067857 Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module  
The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the...
7064361 NPN transistor having reduced extrinsic base resistance and improved manufacturability  
According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base...
7064346 Transistor and semiconductor device  
In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base...
7064360 Bipolar transistor and method for fabricating it  
A method is provided to fabricate a bipolar transistor with a low base connection resistance, low defect density and improved scalability. Scalability is to be understood in this case as both the...
7060582 Adjusting the germanium concentration of a semiconductor layer for equal thermal expansion for a hetero-junction bipolar transistor device  
The present invention relates to a semiconductor layer applicable to a hetero-junction bipolar transistor, a forming method thereof, and a semiconductor device and a manufacturing method thereof,...
7061118 Semiconductor device, stacked semiconductor device, methods of manufacturing the same, circuit board, and electronic instrument  
A method of manufacturing a semiconductor device having a connection terminal and a substrate on which a circuit section and an electrode are stacked in this order, the circuit section having a...
7049201 Method and apparatus for a heterojunction bipolar transistor using self-aligned epitaxy  
A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, a number of insulating layers over the semiconductor...
7038249 Horizontal current bipolar transistor and fabrication method  
A bipolar transistor structure for use in integrated circuits where the active device is processed on the sidewall of an n-hill so that the surface footprint does not depend on the desired area of...
7038256 Low turn-on voltage, non-electron blocking double HBT structure  
A double heterojunction bipolar transistor structure having desirable properties of a low base-emitter turn-on voltage and no electron blocking discontinuities in the base-collector junction. These...
7038244 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer, which are sequentially laminated on a substrate. It also includes...
Matches 101 - 150 out of 669 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >