Matches 601 - 650 out of 671 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >
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5093704 Semiconductor device having a semiconductor region in which a band gap being continuously graded  
An improved semiconductor device such as an improved graded band gap transistor and an improved graded band gap diode, characterized by comprising a non-single-crystal material containing silicon...
5093272 Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors  
Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the...
5084750 Push-pull heterojunction bipolar transistor  
A heterojunction bipolar, push-pull transistor includes a substrate, a first bipolar transistor region including a first collector layer, a first base layer and a first emitter layer disposed over...
5070028 Method for manufacturing bipolar transistors having extremely reduced base-collection capacitance  
A method for manufacturing a heterobipolar transistor having and at least greatly diminished extrinsic base-collector capacitance provides an insulation implantation in a sub-collector layer grown...
5068705 Junction field effect transistor with bipolar device and method  
Vertical AlGaAs heterojunction bipolar transistors and GaAs junction field effect transistors are fabricated on a single gallium arsenide (GaAs) substrate to form an integrated circuit structure....
5068756 Integrated circuit composed of group III-V compound field effect and bipolar semiconductors  
Integrated circuits and fabrication methods incorporating both NPN (192, 194, 210) and PNP (196, 121, 124) heterojunction bipolar transistors together with N channel (198, 200, 216, 218) and P...
5064772 Bipolar transistor integrated circuit technology  
An integrated circuit bipolar transistor is described wherein the relative semiconductor electrode areas are established by an electrode pedestal that includes a base contact positioning feature...
5063427 Planar bipolar transistors including heterojunction transistors  
A bipolar transistor is constructed to include a substrate, a collector layer epitaxial grown on the substrate and a base layer ion implanted in the collector layer. Next a further epitaxial layer...
5063426 InP/InGaAs monolithic integrated photodetector and heterojunction bipolar transistor  
A monolithic integrated photoreceiver comprising a p-i-n photodiode and a heterojunction bipolar transistor is realized in a structural configuration that allows the photonics and electronics to be...
5051372 Method of manufacturing a semiconductor optoelectric integrated circuit device, having a pin, hemt, and hbt, by selective regrowth  
There is disclosed a method of manufacturing an integrated circuit, comprising: the first step of growing a first epitaxial crystal on a compound semiconductor substrate, removing an unnecessary...
5049955 Semiconductor ballistic electron velocity control structure  
A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas...
5036372 Heterojunction avalanche transistor  
An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an...
5031005 Semiconductor device  
A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of │Ec 3 -Ec 1 │≉│Ev 3 -Ev 5 │, where Ec 3 ...
5023687 Semiconductor device  
A complementary semiconductor device is disclosed having a substrate and a four layer structure of pnpn provided on the substrate wherein the first three layers constitute a pnp-type bipolar...
5019890 Heterojunction bipolar transistor  
A heterojunction bipolar transistor includes an emitter layer of a first conductivity type, a base layer of a second conductivity type adjacent to the emitter layer, a collector buffer layer of the...
5015874 Status holding circuit and logic circuit using the same  
A status holding circuit includes a transistor having an emitter coupled to a negative power source, a collector and a base coupled to said collector and having a negative conductance range, first...
5010382 Heterojunction bipolar transistor having double hetero structure  
A double heterojunction bipolar transistor which comprises a first conductivity type emitter layer, a second conductivity type base layer which is in contact with the emitter layer and forms a...
5006912 Heterojunction bipolar transistor with SiGe  
A heterojunction bipolar transistor has an emitter which comprises an expitaxial layer of silicon grown on a silicon and germanium base layer. The active region of the transistor comprises a...
5003366 Hetero-junction bipolar transistor  
The present invention provides a hetero-junction bipolar transistor (HBT) whichis so designed that the emitter injection efficiency is improved, the base transit time and base resistance are...
5001534 Heterojunction bipolar transistor  
A scalable and relatively easily manufacturable heterojunction bipolar transistor (HBT) comprises a thin (exemplarily 5-25 nm) emitter layer that serves as an etch stop layer and that furthermore...
4985742 High temperature semiconductor devices having at least one gallium nitride layer  
A device having high temperature operating characteristics is provided by depositing n-type cubic gallium nitride on n-type cubic silicon carbide to provide an ohmic contact or electrode. High...
4979009 Heterojunction bipolar transistor  
2A heterojunction bipolar transistor is disclosed in which a region of a base layer which extends in the vicinity of the interface between the base layer and an emitter layer is doped with an...
4967252 Compound semiconductor bipolar device with side wall contact  
A high-speed compound semiconductor device includes semiconductor layers of a group III-V alloy laminated in a vertical direction. The device uses a base electrode that contacts side walls and...
4967254 Semiconductor device  
A semiconductor device includes a collector layer comprising a first conductivity type semiconductor layer, a base layer comprising a second conductivity type semiconductor layer produced on the...
4956689 High speed gallium arsenide transistor and method  
Vertical buried emitter heterojunction bipolar transistors having greatly reduced emitter to base junction area and collector dimensions are fabricated in a gallium arsenide substrate to form an...
4954457 Method of making heterojunction bipolar transistors  
Heterojunction bipolar transistor technology employing in a body wherein a larger area base electrode over a buried electrode has above it a smaller area electrode, an overhang capability on the...
4935797 Heterojunction bipolar transistors  
Heterojunction bipolar transistor technology employing in a body wherein a larger area base electrode over a buried electrode has above it a smaller area electrode, an overhang capability on the...
4927773 Method of minimizing implant-related damage to a group II-VI semiconductor material  
A method of forming in a semiconductor material a region having a different chemical composition or a different concentration than a chemical composition or concentration of material surrounding...
4920069 Submicron dimension compound semiconductor fabrication using thermal etching  
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided...
4914049 Method of fabricating a heterojunction bipolar transistor  
A heterojunction bipolar transistor having a planar surface topology, reduced lateral dimensions and a base electrode aligned to both the emitter and collector electrodes is fabricated by forming...
4904612 Method for manufacturing a planar, self-aligned emitter-base complex  
A method for the manufacture of a planar, self-aligned emitter-base complex, whereby a semiconductor layer structure standard for hetero-bipolar transistors is first grown on a substrate, the base...
4903092 Real space electron transfer device using hot electron injection  
Real space hot electron transfer devices using hot electron transfer between two conducting channels are described.
4896203 Heterojunction bipolar transistor  
In the inventive heterojunction bipolar transistor and method of manufacturing the same, a semi-insulation layer and an external base layer sequentially epitaxially grown on a collector layer are...
4868633 Selective epitaxy devices and method  
Selective growth of GaAs and related semiconductors (34) by use of tungsten silicide and related materials for growth masks (36) plus devices incorporating the selective growth plus use of the...
4849371 Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices  
A method and product for monocrystalline semiconductor buried layer contacts formed from recrystallized polycrystalline buried layers.
4825269 Double heterojunction inversion base transistor  
A bipolar transistor in which the base region includes a heterostructure and a doped layer of semiconductor material with the heterostructure functioning as a two-dimensional hole gas. The doped...
4824805 Method of manufacturing semiconductor device  
A method of manufacturing a heterojunction bipolar transistor comprising the sequential steps of; forming an extra epitaxial layer (9) on a layered structure which consists of a collector layer...
4818712 Aluminum liftoff masking process and product  
An aluminum liftoff masking process is effected on a prepared gallium arsenide wafer having a base thereon. Successive layers of silicon dioxide and aluminum are deposited on the wafer. The...
4807008 Static memory cell using a heterostructure complementary transistor switch  
A heterostructure complementary transistor switch (HCTS) is fabricated using epitaxial layers on a substrate to form the desired P-N-P-N (or N-P-N-P) complementary structure in III-V compound...
4789643 Method of manufacturing a heterojunction bipolar transistor involving etch and refill  
A heterojunction bipolar transistor and method of manufacturing the same is disclosed in which, a semi-insulation layer and an external base layer sequentially epitaxially grown on a collector...
4775882 Lateral bipolar transistor  
Silicon doping of GaAs provides n conductivity in {100} planes and p conductivity in {111} A planes. A split level of Si-doped GaAs utilizes this phenomena to provide a bipolar transistor. In one...
4751195 Method of manufacturing a heterojunction bipolar transistor  
A method of manufacturing a heterojunction bipolar transistor in which a collector region, a base region and an emitter region are successively formed on a compound semiconductor substrate, forming...
4731340 Dual lift-off self aligning process for making heterojunction bipolar transistors  
A dual lift-off technique is used to provide self-alignment of the emitter area, the emitter contact, and the base contact of a heterojunction, bipolar transistor. A photoresist pattern which...
4723250 Solid state cyclotron laser  
A solid state cyclotron laser device generate coherent electromagnetic radiation. A semiconductor configuration comprises an emitter region and a collector region separated by a base region and...
4717681 Method of making a heterojunction bipolar transistor with SIPOS  
A wafer process flow encompasses an arbitray repeated layered structure of heteroepitaxial layers of silicon based films with process control throughout the strata of chemical potential and...
4683487 Heterojunction bipolar transistor  
A collector lead-out portion and a base lead-out portion are formed so as to oppose to each other in such a manner that active regions including a collector, a base and an emitter are sandwiched...
4679305 Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions  
A method of manufacturing a heterojunction bipolar transistor comprising the steps of forming a first semiconductor layer of a first conductivity type as a collector on a semiconductor substrate,...
4672413 Barrier emitter transistor  
A bipolar transistor, and a corresponding method for its fabrication, in which the injection efficiency, and therefore the common emitter current gain, is greatly increased without significant...
4649411 Gallium arsenide bipolar ECL circuit structure  
A gallium arsenide integrated circuit structure is disclosed wherein each transistor has only two of three terminals exposed at the semiconductor surface, thereby decreasing both the area of the...
4644381 I.sup.2 L heterostructure bipolar transistors and method of making the same  
An integrated injection logic (I 2 L) semiconductor structure is disclosed which may be advantageously implemented in a group III-V compound semiconductor such as gallium arsenide. The base region...
Matches 601 - 650 out of 671 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 >