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Match Document Document Title
7619240 Semiconductor photodetector, device for multispectrum detection of electromagnetic radiation using such a photodetector and method for using such a device  
This semiconductor photodetector consists of a diode with at least two heterojunctions comprising two external layers, a first layer with a given kind or type of doping and a second layer with a...
7618851 Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure  
The production of a microelectronic component, particularly a pHEMT, having a T-shaped gate electrode in a double-recess structure uses a production method for self-adjusting alignment of the two...
7615774 Aluminum free group III-nitride based high electron mobility transistors  
Aluminum free high electron mobility transistors (HEMTs) and methods of fabricating aluminum free HEMTs are provided. In some embodiments, the aluminum free HEMTs include an aluminum free Group...
7612390 Heterojunction transistors including energy barriers  
A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer...
7608865 Club extension to a T-gate high electron mobility transistor  
A method of fabricating a T-gate HEMT with a club extension comprising the steps of: providing a substrate; providing a bi-layer resist on the substrate; exposing an area of the bi-layer resist to...
7608864 High electron mobility transistor with mesa structure and reduced gate leakage current  
The semiconductor device ( 10 ) comprises a semiinsulating substrate ( 12 ), a layered structure ( 20 ) of compound semiconductor which is a mesa structure ( 18 ) and contains an active channel...
7601993 Semiconductor device having ohmic recessed electrode  
The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing...
7601567 Method of preparing organic thin film transistor, organic thin film transistor, and organic light-emitting display device including the organic thin film transistor  
A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain...
7598131 High power-low noise microwave GaN heterojunction field effect transistor  
A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto...
7598108 Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers  
A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method....
7595544 Semiconductor device and manufacturing method thereof  
An object of the present invention is to provide a semiconductor device and a manufacturing method thereof which can realize a normally-off field-effect transistor made of a III group nitride...
7595507 Semiconductor devices having gallium nitride epilayers on diamond substrates  
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or...
7592647 Semiconductor device and manufacturing method thereof  
A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region,...
7589360 Group III nitride semiconductor devices and methods of making  
A device having an electrode-insulator layer-group III nitride layer structure, wherein an interface between the insulator layer and the group III nitride semiconductor layer lies along a non-polar...
7585706 Method of fabricating a semiconductor device  
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
7576373 Nitride semiconductor device and method for manufacturing the same  
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a first p-AlGaN layer, a second p-AlGaN layer and a high concentration p-GaN layer are formed in this order on a substrate. A gate...
7573079 Field effect type semiconductor device  
A field effect type semiconductor device is disclosed wherein a channel is easily depleted just under a gate electrode to implement an E-mode, but a channel is hard to be depleted just under a gate...
7573078 Wide bandgap transistors with multiple field plates  
A transistor comprising a plurality of active semiconductor layers on a substrate, with source and drain electrodes in contact with the semiconductor layers. A gate is formed between the source and...
7569871 Gallium nitride material transistors and methods associated with the same  
Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal...
7569870 Gallium-nitride-based compound semiconductor device  
A semiconductor device having nitride semiconductor layers has a buffer layer ( 2 ) in the form of alternations of a first sublayer ( 8 ) of AlN and a second layer ( 9 ) of GaN with interposition...
7569869 Transistor having tensile strained channel and system including same  
A transistor structure and a system including the transistor structure. The transistor structure comprises: a substrate including a first layer comprising a first crystalline material; a tensile...
7569459 Nonvolatile programmable resistor memory cell  
A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second...
7566918 Nitride based transistors for millimeter wave operation  
Field effect transistors having a power density of greater than 5 W/mm when operated at a frequency of at least 30 GHz are provided. The power density of at least 5 W/mm may be provided at a drain...
7566898 Buffer architecture formed on a semiconductor wafer  
In one embodiment, the present invention includes an apparatus for forming a transistor that includes a silicon (Si) substrate, a dislocation filtering buffer formed over the Si substrate having a...
7564074 Semiconductor device including a lateral field-effect transistor and Schottky diode  
A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer...
7560752 Field effect transistor including two group III-V compound semiconductor layers  
A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band...
7557389 Field-effect transistor  
A field-effect transistor includes a channel layer formed of a III-V compound semiconductor excluding aluminum; a gate contact layer formed of a III-V compound semiconductor and provided on the...
7557378 Boron aluminum nitride diamond heterostructure  
A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B (x) Al (1−x) N) layer disposed in contact with a surface of the diamond layer, where x is...
7550785 PHEMT structure having recessed ohmic contact and method for fabricating same  
According to an exemplary embodiment, a PHEMT (pseudomorphic high electron mobility transistor) structure includes a conductive channel layer. The PHEMT structure further includes at least one...
7550784 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses  
Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes...
7550783 Wide bandgap HEMTs with source connected field plates  
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers....
7547928 AlGaN/GaN high electron mobility transistor devices  
The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy,...
7544963 Binary group III-nitride based high electron mobility transistors  
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III-nitride HEMTs...
7538366 Nitride semiconductor device  
A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a...
7538365 Field effect transistor with aluminum and phosphorus etch stop layer  
A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact...
7528423 Semiconductor device  
It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in I max , and further achieve an...
7525154 Semiconductor substrate, manufacturing method therefor, and semiconductor device  
A semiconductor substrate and a manufacturing method therefore, and a semiconductor device using the semiconductor substrate comprise a strained Si region and unstrained Si region formed at...
7521732 Vertical heterostructure field effect transistor and associated method  
A vertical heterostructure field effect transistor including a first layer having a first material, and the first material having a hexagonal crystal lattice structure defining a first bandgap and...
7518166 Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate  
Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer...
7518154 Nitride semiconductor substrate and semiconductor element built thereon  
A substrate system of the kind having a buffer region interposed between a silicon substrate proper and a nitride semiconductor region in order to make up for a difference in linear expansion...
7508015 Semiconductor device using a nitride semiconductor  
A semiconductor device includes: a first semiconductor layer represented by a composition formula Al x Ga 1-x N (0≦x≦1); a first conductivity type or non-doped second semiconductor layer...
7508014 Field effect transistor including a gate electrode and an additional electrode  
A field effect transistor including an i-type first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer and having a band gap energy higher in magnitude...
7501670 Cascode circuit employing a depletion-mode, GaN-based FET  
A circuit includes an input drain, source and gate nodes. The circuit also includes a group III nitride depletion mode FET having a source, drain and gate, wherein the gate of the depletion mode...
7501669 Wide bandgap transistor devices with field plates  
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source...
7498617 III-nitride integrated schottky and power device  
A III-nitride power device that includes a Schottky electrode integrated with a power switch. The combination is used in power supply circuits such as a boost converter circuit.
7495268 Semiconductor device and manufacturing method of the same  
A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a...
7492017 Semiconductor transistor having a stressed channel  
A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain films are deposited in the recesses. The...
7491988 Transistors with increased mobility in the channel zone and method of fabrication  
A semiconductor transistor structure with increased mobility in the channel zone and a method of its fabrication are described. A semiconductor substrate having a first dopant is formed. A...
7491983 Nitride-based semiconductor device of reduced current leakage  
A high electron mobility transistor is disclosed which has a double-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region...
7491612 Field effect transistor with a heterostructure and associated production method  
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made...
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