Patents in Class 257/192

Matches 1 - 50 out of 800

Match	Document	Document Title
1	7629627	Field effect transistor with independently biased gates A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate...
2	7626216	Systems and methods for electromagnetic noise suppression using hybrid electromagnetic bandgap structures A hybrid electromagnetic bandgap (EBG) structure for broadband suppression of noise on printed wiring boards includes an array of coplanar patches interconnected into a grid by series inductances,...
3	7612364	MOS devices with source/drain regions having stressed regions and non-stressed regions A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a stressor having at least a portion in the semiconductor substrate and adjacent to the...
4	7608864	High electron mobility transistor with mesa structure and reduced gate leakage current The semiconductor device ( 10 ) comprises a semiinsulating substrate ( 12 ), a layered structure ( 20 ) of compound semiconductor which is a mesa structure ( 18 ) and contains an active channel...
5	7605407	Composite stressors with variable element atomic concentrations in MOS devices A semiconductor device includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor adjacent the gate stack and having at least a portion in the semiconductor...
6	7601995	Integrated circuit having resistive memory cells A memory includes an array of memory cells, each memory cell including resistive material, a first insulation material laterally surrounding the resistive material of each memory cell, and a heat...
7	7601993	Semiconductor device having ohmic recessed electrode The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing...
8	7598131	High power-low noise microwave GaN heterojunction field effect transistor A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto...
9	7595544	Semiconductor device and manufacturing method thereof An object of the present invention is to provide a semiconductor device and a manufacturing method thereof which can realize a normally-off field-effect transistor made of a III group nitride...
10	7595536	Semiconductor device A semiconductor device that can prevent an unnecessary current path from being formed so that a normal signal is transmitted is provided. The semiconductor device comprises an N − region formed...
11	7592647	Semiconductor device and manufacturing method thereof A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region,...
12	7592646	Semiconductor device with a SiGe layer having uniaxial lattice strain A semiconductor device includes a MIS transistor. The device includes a buried insulating film formed in one part of a substrate, the buried insulating film being elongated in a gate-width...
13	7589360	Group III nitride semiconductor devices and methods of making A device having an electrode-insulator layer-group III nitride layer structure, wherein an interface between the insulator layer and the group III nitride semiconductor layer lies along a non-polar...
14	7585706	Method of fabricating a semiconductor device The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
15	7579634	Semiconductor device including a field effect transistor A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation...
16	7576373	Nitride semiconductor device and method for manufacturing the same An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a first p-AlGaN layer, a second p-AlGaN layer and a high concentration p-GaN layer are formed in this order on a substrate. A gate...
17	7573083	Transistor type ferroelectric memory and method of manufacturing the same A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source...
18	7573079	Field effect type semiconductor device A field effect type semiconductor device is disclosed wherein a channel is easily depleted just under a gate electrode to implement an E-mode, but a channel is hard to be depleted just under a gate...
19	7573078	Wide bandgap transistors with multiple field plates A transistor comprising a plurality of active semiconductor layers on a substrate, with source and drain electrodes in contact with the semiconductor layers. A gate is formed between the source and...
20	7569871	Gallium nitride material transistors and methods associated with the same Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal...
21	7569870	Gallium-nitride-based compound semiconductor device A semiconductor device having nitride semiconductor layers has a buffer layer ( 2 ) in the form of alternations of a first sublayer ( 8 ) of AlN and a second layer ( 9 ) of GaN with interposition...
22	7569848	Mobility enhanced CMOS devices Compressive or tensile materials are selectively introduced beneath and in alignment with spacer areas and adjacent to channel areas of a semiconductor substrate to enhance or degrade electron and...
23	7566917	Electronic device and heterojunction FET In an electronic device of the present invention a gate Schottky electrode is formed on an active layer constructed of a GaN layer and an AlGaN layer, and a source ohmic electrode and a drain ohmic...
24	7566916	Ohmic metal contact and channel protection in GaN devices using an encapsulation layer A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An...
25	7566913	Gallium nitride material devices including conductive regions and methods associated with the same Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an...
26	7564074	Semiconductor device including a lateral field-effect transistor and Schottky diode A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer...
27	7564073	CMOS and HCMOS semiconductor integrated circuit A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a...
28	7560752	Field effect transistor including two group III-V compound semiconductor layers A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band...
29	7560326	Silicon/silcion germaninum/silicon body device with embedded carbon dopant A semiconductor structure and method of manufacturing a semiconductor device, and more particularly, an NFET device. The devices includes a stress receiving layer provided over a stress inducing...
30	7560301	Coating liquid for forming organic layered film, method of manufacturing field effect transistor, and field effect transistor A method of manufacturing a field effect transistor of the present invention includes: applying a coating liquid 20 containing a solvent 13 as well as first and second organic molecules 11 ...
31	7557388	MOSFET formed on a strained silicon layer A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer...
32	7557378	Boron aluminum nitride diamond heterostructure A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B (x) Al (1−x) N) layer disposed in contact with a surface of the diamond layer, where x is...
33	7550785	PHEMT structure having recessed ohmic contact and method for fabricating same According to an exemplary embodiment, a PHEMT (pseudomorphic high electron mobility transistor) structure includes a conductive channel layer. The PHEMT structure further includes at least one...
34	7550784	Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes...
35	7550783	Wide bandgap HEMTs with source connected field plates A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers....
36	7547932	Vertical gate-depleted single electron transistor A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated...
37	7538480	Organic thin film transistor and flat panel display device including the same Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT...
38	7538365	Field effect transistor with aluminum and phosphorus etch stop layer A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact...
39	7538364	Compound semiconductor FET On a substrate of a GaN FET, an undoped AlN layer, a GaN delta doped layer, an undoped GaN layer, and an undoped Al 0.2 Ga 0.8 N layer are formed in sequence. Arranged on the undoped Al 0.2 Ga 0.8...
40	7531849	High performance FET devices An epitaxially layered structure with gate voltage bias supply circuit element for improvement in performance for semiconductor field effect transistor (FET) devices utilizes a structure comprised...
41	7528424	Integrated circuitry This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon...
42	7525130	Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same Novel GaN/AlGaN metal-semiconductor field-effect transistor (MESFET) structures grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge is created...
43	7521732	Vertical heterostructure field effect transistor and associated method A vertical heterostructure field effect transistor including a first layer having a first material, and the first material having a hexagonal crystal lattice structure defining a first bandgap and...
44	7521731	Semiconductor device and method of manufacturing the same A semiconductor device of the invention includes a first conductive type semiconductor base substrate; and a switching mechanism which is formed on a first main surface of the semiconductor base...
45	7518166	Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer...
46	7508015	Semiconductor device using a nitride semiconductor A semiconductor device includes: a first semiconductor layer represented by a composition formula Al x Ga 1-x N (0≦x≦1); a first conductivity type or non-doped second semiconductor layer...
47	7508014	Field effect transistor including a gate electrode and an additional electrode A field effect transistor including an i-type first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer and having a band gap energy higher in magnitude...
48	7507988	Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer A heterostructure is provided which includes a substantially relaxed SiGe layer present atop an insulating region that is located on a substrate. The substantially relaxed SiGe layer has a...
49	7504691	Power trench MOSFETs having SiGe/Si channel structure Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a...
50	7501669	Wide bandgap transistor devices with field plates A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source...

Matches 1 - 50 out of 800

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