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9041056 Semiconductor device and method of manufacturing same  
According to one embodiment, a semiconductor device including: a substrate; a gate electrode formed above the substrate; a gate insulating film formed under the gate electrode; a channel layer...
9041058 Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate process  
A method of manufacturing a transistor by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer. A semiconductor...
9041064 High voltage GaN transistor  
A multiple field plate transistor includes an active region, with a source, drain, and gate. A first spacer layer is between the source and the gate and a second spacer layer between the drain and...
9041062 Silicon-on-nothing FinFETs  
A semiconductor device includes an insulator formed within a void to electrically isolate a fin from an underlying substrate. The void is created by removing a doped sacrificial layer formed...
9041057 Field effect transistor device with shaped conduction channel  
A field effect transistor device includes a substrate, a silicon germanium (SiGe) layer disposed on the substrate, gate dielectric layer lining a surface of a cavity defined by the substrate and...
9041059 Semiconductor structure for antenna switching circuit  
A manufacturing method for antenna switching circuit includes the following steps of: providing a GaAs wafer, which includes a capping layer; disposing an isolation layer to the GaAs wafer for...
9041060 III-V FET device with overlapped extension regions using gate last  
A structure and method for fabricating a III-V compound semiconductor-containing heterostructure field-effect transistor (FET) with self-aligned and overlapped extensions using a gate last process...
9041061 III-V device with overlapped extension regions using replacement gate  
A structure and method for fabricating a III-V compound semiconductor-containing heterostructure field-effect transistor (FET) with self-aligned and overlapped extensions using a replacement gate...
9035318 Avalanche energy handling capable III-nitride transistors  
A semiconductor device includes a GaN FET with an overvoltage clamping component electrically coupled to a drain node of the GaN FET and coupled in series to a voltage dropping component. The...
9035430 Semiconductor fin on local oxide  
A semiconductor substrate including a first epitaxial semiconductor layer is provided. The first epitaxial semiconductor layer includes a first semiconductor material, and can be formed on an...
9035353 Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same  
A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has...
9035320 Semiconductor device  
According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting...
9035375 Field-effect device and manufacturing method thereof  
Embodiments relate to a field-effect device that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region, and a pocket implant region...
9035362 Sensor for sensing the presence of at least one fluidum  
A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate...
9035311 Organic light emitting diode display device and method of fabricating the same  
An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a...
9029913 Silicon-germanium fins and silicon fins on a bulk substrate  
A first silicon-germanium alloy layer is formed on a semiconductor substrate including silicon. A stack of a first silicon layer and a second silicon-germanium alloy layer is formed over a first...
9029912 Semiconductor substructure having elevated strain material-sidewall interface and method of making the same  
A semiconductor substructure with improved performance and a method of forming the same is described. In one embodiment, the semiconductor substructure includes a substrate, having an upper...
9024392 Multi-port SRAM manufacturing  
Some embodiments relate to an integrated circuit including fin field effect transistors (FinFETs) thereon. The integrated circuit includes first and second active fin regions having a first...
9023703 Method of manufacturing semiconductor device using an oxidation process to increase thickness of a gate insulation layer  
According to a method of manufacturing a semiconductor device including a buried gate, after a recess is formed by etching a semiconductor substrate, since an etching back process is not performed...
9024356 Compound semiconductor device with buried field plate  
A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor...
9018680 Non-planar semiconductor device having active region with multi-dielectric gate stack  
Non-planar semiconductor devices having group III-V material active regions with multi-dielectric gate stacks are described. For example, a semiconductor device includes a hetero-structure...
9018678 Method for forming a Ge on III/V-on-insulator structure  
The present invention concerns a method for forming a Semiconductor-On-Insulator structure that includes a semiconductor layer of III/V material by growing a relaxed germanium layer on a donor...
9018679 Semiconductor device  
A semiconductor device includes: an operation layer that is provided on a substrate and is made of a GaAs-based semiconductor; a first AlGaAs layer provided on the operation layer; a gate...
9018677 Semiconductor structure and method of forming the same  
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in...
9012956 Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGe  
When forming sophisticated P-channel transistors, a semiconductor alloy layer is formed on the surface of the semiconductor layer including the transistor active region. When a metal silicide...
9012958 Semiconductor device  
A semiconductor device of the invention includes an n-GaN layer provided on a substrate, a channel layer provided in contact with the upper surface of the n-GaN layer, an electron supply layer...
9012957 MOS transistor  
A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof,...
9006088 Method for forming semiconductor gate structure and semiconductor gate structure  
A method for forming a semiconductor gate structure and a semiconductor gate structure are provided. The method includes: providing a substrate with a Ge layer as a surface thereof; forming a Sn...
9006787 Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus  
A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the...
9006788 Source/drain re-growth for manufacturing III-V based transistors  
A method of forming an integrated circuit structure includes providing a substrate, and epitaxially growing a first semiconductor layer over the substrate. The first semiconductor layer includes a...
9006707 Forming arsenide-based complementary logic on a single substrate  
In one embodiment, the present invention includes a method for forming a logic device, including forming an n-type semiconductor device over a silicon (Si) substrate that includes an indium...
8999793 Multi-gate field-effect transistor process  
A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a...
9000483 Semiconductor device with fin structure and fabrication method thereof  
A semiconductor device includes a substrate, a first fin structure, an electrical contact structure and a gate structure. The first fin structure includes a horizontal fin structure extending...
8994035 Semiconductor device with low-conducting buried and/or surface layers  
A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured...
8994073 Hydrogen mitigation schemes in the passivation of advanced devices  
Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation...
8994072 Reduced resistance SiGe FinFET devices and method of forming same  
A method for forming a fin field-effect transistor (FinFET) device, comprises forming a plurality of silicon fins on a substrate, depositing silicon germanium (SiGe) on the plurality of fins,...
8987782 Semiconductor structure for forming a combination of different types of devices  
There is provided a compound semiconductor wafer that is suitably used to form a plurality of different types of devices such as an HBT and an FET thereon. The semiconductor wafer includes a first...
8987747 Semiconductor device with silicon nitride films having different oxygen densities  
A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate...
8987781 Structure of heterojunction field effect transistor and a fabrication method thereof  
An improved structure of heterojunction field effect transistor (HFET) and a fabrication method thereof are disclosed. The improved HFET structure comprises sequentially a substrate, a channel...
8987075 Method for manufacturing a compound semiconductor device  
A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed...
8981434 Semiconductor device and field effect transistor  
Provided is a semiconductor device in which the trade-off between the withstand voltage and the on-resistance is improved and the performance is increased. A semiconductor device comprises a...
8975704 Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations  
A HKMG device with PMOS eSiGe source/drain regions is provided. Embodiments include forming first and second HKMG gate stacks on a substrate, each including a SiO2 cap, forming extension regions...
8975641 Transistor having an ohmic contact by gradient layer and method of making the same  
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a gradient having a first concentration of a first...
8975167 Semiconductor device and manufacturing method  
A fabrication process of a semiconductor device is disclosed. The method includes providing a semiconductor substrate with a first insulation layer formed on the semiconductor substrate and a fin...
8969882 Transistor having an ohmic contact by screen layer and method of making the same  
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a first portion and a screen layer over the first...
8969919 Field-effect transistor  
A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an...
8969917 Semiconductor device and method for manufacturing same  
According to an embodiment, a semiconductor device includes a first layer including a first nitride semiconductor, a second layer provided on the first layer and including a second nitride...
8969927 Gate contact for a semiconductor device and methods of fabrication thereof  
Embodiments of a gate contact for a semiconductor device and methods of fabrication thereof are disclosed. In one embodiment, a semiconductor device includes a semiconductor structure and a...
8963203 Nitride semiconductor device and method for manufacturing same  
According to one embodiment, a nitride semiconductor device includes a substrate; semiconductor stacked layers including a nitride semiconductor provided on the substrate, and having a buffer...
8963205 Method for fabricating a semiconductor device  
A transistor of a semiconductor device includes a substrate, a gate over the substrate, a source/drain region formed in the substrate to have a channel region therebetween, and an epitaxial layer...