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8501611 Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls  
Methods of forming integrated circuit devices include forming an electrically conductive layer containing silicon on a substrate and forming a mask pattern on the electrically conductive layer....
8502272 Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication  
A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
8502234 Monolithically integrated vertical JFET and Schottky diode  
An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material...
8501566 Method for fabricating a recessed channel access transistor device  
A method for fabricating a recessed channel access transistor device is provided. A semiconductor substrate having thereon a recess is provided. A gate dielectric layer is formed in the recess. A...
8497553 Semiconductor device  
A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second...
8497508 Semiconductor device and manufacturing method thereof  
A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical...
8497528 Method for fabricating a strained structure  
A structure for a field effect transistor on a substrate that includes a gate stack, an isolation structure and a source/drain (S/D) recess cavity below the top surface of the substrate disposed...
8497513 III-V nitride semiconductor device comprising a diamond layer  
The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect...
8492213 Transistor and method for forming the same  
The invention discloses a semiconductor device which comprises an NMOS transistor and a PMOS transistor formed on a substrate; and grid electrodes, source cathode doped areas, drain doped areas,...
8492771 Heterojunction semiconductor device and method  
A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a...
8492793 Semiconductor device and method of manufacturing the same  
According to one embodiment, a semiconductor device including a tunnel FET, includes a gate electrode, which is formed on a first semiconductor layer formed of Si1−XGeX (0
8492219 Semiconductor device manufacturing method  
In a semiconductor device manufacturing method, a first semiconductor region which includes a narrow portion and a wide portion is formed in an upper portion of a semiconductor substrate, a gate...
8482036 Lateral high electron mobility transistor  
A lateral HEMT includes a substrate, a first semiconductor layer above the substrate and a second semiconductor layer on the first semiconductor layer. The lateral HEMT further includes a gate...
8482037 Gated AlGaN/GaN Schottky device  
Some exemplary embodiments of a semiconductor device using a III-nitride heterojunction and a novel Schottky structure and related method resulting in such a semiconductor device, suitable for...
8476125 Fabrication technique for high frequency, high power group III nitride electronic devices  
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The...
8471340 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure  
Disclosed is semiconductor structure with an insulator layer on a semiconductor substrate and a device layer is on the insulator layer. The substrate is doped with a relatively low dose of a...
8471294 GaN-based nitric oxide sensors and methods of making and using the same  
GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In...
8466493 Self-aligned III-V field effect transistor (FET), integrated circuit (IC) chip with self-aligned III-V FETS and method of manufacture  
Field Effect Transistors (FETs), Integrated Circuit (IC) chips including the FETs, and a method of forming the FETs and IC. FET locations are defined on a layered semiconductor wafer. The layered...
8466494 Field effect transistor, semiconductor switch circuit, and communication apparatus  
A field effect transistor includes a source wiring that is formed on a compound semiconductor substrate, and has a plurality of source electrodes arranged in parallel to each other at...
8466495 Field effect transistor with reduced gate leakage current  
Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided...
8461632 SiC semiconductor device and method of manufacturing the same  
A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve...
8461625 Carrier mobility enhanced channel devices and method of manufacture  
An integrated circuit with stress enhanced channels, a design structure and a method of manufacturing the integrated circuit is provided. The method includes forming a dummy gate structure on a...
8455860 Reducing source/drain resistance of III-V based transistors  
An integrated circuit structure includes a substrate; a channel layer over the substrate, wherein the channel layer is formed of a first III-V compound semiconductor material; a highly doped...
8450774 High performance power switch  
In one example, we describe a new high performance AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor (MISHFET), which was fabricated using HfO2 as the surface...
8450721 III-nitride power semiconductor device  
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
8445942 Semiconductor device having metal oxide film  
A semiconductor device includes: a nitride group semiconductor functional layer including a second nitride group semiconductor region on a first nitride group semiconductor region where a...
8445939 Method of forming a semiconductor device and semiconductor device  
A method of forming a semiconductor device comprises forming a control electrode over a portion of a semiconductor layer, forming recesses extending into the semiconductor layer on opposing sides...
8445940 Source and drain feature profile for improving device performance  
An integrated circuit device is disclosed. The disclosed device provides improved control over a surface proximity and tip depth of integrated circuit devices. An exemplary integrated circuit...
8445341 Semiconductor device and fabrication method for the same  
A semiconductor device includes a substrate; a nitride based compound semiconductor layer placed on the substrate; an active area which is placed on the nitride based compound semiconductor layer,...
8441035 Field effect transistor and method of manufacturing the same  
The present invention has an object to provide an FET and a method of manufacturing the FET that are capable of increasing the threshold voltage as well as decreasing the on-resistance. The FET of...
8441037 Semiconductor device having a thin film stacked structure  
An objective is to provide a semiconductor device capable of utilizing properties of a high-mobility electron transport layer with a thin film stacked structure having large ΔEc, high electron...
8440550 Method for forming strained layer with high Ge content on substrate and semiconductor structure  
A semiconductor structure and a method for forming the same are provided. The semiconductor structure may comprise a substrate (110); an insulation layer (120) formed on the substrate (110); a...
8441030 III-nitride multi-channel heterojunction interdigitated rectifier  
A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
8441034 Gallium nitride semiconductor substrate with semiconductor film formed therein  
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal...
8436399 Semiconductor device  
A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three...
8436336 Structure and method for a high-speed semiconductor device having a Ge channel layer  
The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained...
8431961 Memory devices with a connecting region having a band gap lower than a band gap of a body region  
Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can...
8431960 Dopant diffusion modulation in GaN buffer layers  
An enhancement mode gallium nitride (GaN) transistor with a Mg doped layer and a Mg growth interruption (diffusion barrier) layer to trap excess or residual Mg dopant. The Mg growth interruption...
8431973 High frequency semiconductor device  
A high frequency semiconductor device includes: a field effect transistor including gate terminal electrodes, source terminal electrodes, and a drain terminal electrode; an input circuit pattern...
8426893 Epitaxial substrate for electronic device and method of producing the same  
An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive...
8426892 Compound semiconductor device and method of manufacturing the same  
A compound semiconductor device has a buffer layer formed on a conductive SiC substrate, an AlxGa1-xN layer formed on the buffer layer in which an impurity for reducing carrier concentration from...
8426891 Semiconductor device and method of fabricating the same  
A semiconductor substrate according to one embodiment includes: a first transistor having a first gate insulating film formed on a semiconductor substrate, a first gate electrode formed on the...
8421182 Field effect transistor having MOS structure made of nitride compound semiconductor  
A semiconductor layer of a second conductive type is formed on a RESURF layer of a first conductive type that is formed on a buffer layer. A contact layer of the first conductive type is formed in...
8421077 Replacement gate MOSFET with self-aligned diffusion contact  
A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack is formed in a cavity formed by...
8421060 Reconfigurable logic device using spin accumulation and diffusion  
A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal...
8421120 Field effect transistor capable of reducing shift of threshold voltage  
A problem is arisen in conventional J-FETs that a shifting in a threshold voltage (VT) is generated before or after an energization with a gate current. A junction gate field effect transistor...
8421121 Antimonide-based compound semiconductor with titanium tungsten stack  
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer....
8421123 Semiconductor device having transistor and rectifier  
A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main...
8415214 STI silicon nitride cap for flat FEOL topology  
Transistor devices are formed with a nitride cap over STI regions during FEOL processing. Embodiments include forming a pad oxide layer on a substrate, forming an STI region in the substrate so...
8410524 Group III nitride semiconductor device and epitaxial substrate  
Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be reduced. In a high electron mobility transistor 11, a supporting substrate 13 is...