Match Document Document Title
8754421 Method for processing semiconductors using a combination of electron beam and optical lithography  
Forming an alignment mark on a semiconductor structure using an optical lithography to form a metal alignment mark on a substrate of the structure, using the formed metal alignment mark to form a...
8754449 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof  
The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type,...
8754448 Semiconductor device having epitaxial layer  
A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense...
8754447 Strained channel transistor structure and method  
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain...
8748269 Quantum-well-based semiconductor devices  
Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate...
8748941 Nitride semiconductor device having reduced interface leakage currents  
A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor...
8742450 III-nitride multi-channel heterojunction device  
A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
8742467 Bidirectional switching device and bidirectional switching circuit using the same  
A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the...
8729558 Nitride semiconductor device  
According to one embodiment, a nitride semiconductor device includes a semiconductor layer, a source electrode, a drain electrode, a first and a second gate electrode. The semiconductor layer...
8729565 Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodes  
A FET includes a first and second set of finger arrays that each include a source, gate and drain. A first source pad is electrically coupled to source electrodes in the first set of finger...
8729603 GaN-based semiconductor element  
A GaN-based semiconductor element includes a substrate, a buffer layer formed on the substrate, including an electrically conductive portion, an epitaxial layer formed on the buffer layer, and a...
8729604 Compound semiconductor device, method for manufacturing the device and electric device  
A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein...
8723225 Guard rings on fin structures  
A device includes a semiconductor substrate, isolation regions extending into the semiconductor substrate, a plurality of semiconductor fins higher than top surfaces of the isolation regions, and...
8723229 Semiconductor device and method of manufacturing the device  
In a manufacturing method of a semiconductor device, first, a first semiconductor layer, a second semiconductor layer, and a p-type third semiconductor layer are sequentially epitaxially grown on...
8723296 Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates  
A method includes forming a stress compensating stack over a substrate, where the stress compensating stack has compressive stress on the substrate. The method also includes forming one or more...
8723223 Hybrid Fin field-effect transistors  
A hybrid Fin Field-Effect Transistor (FinFET) includes a first and a second FinFET. The first FinFET includes a first channel region formed of a first semiconductor fin, and a first source region...
8723224 Semiconductor device  
One embodiment of a semiconductor device according to the present invention includes a substrate, a base compound semiconductor layer layered on the substrate to form a base, a channel defining...
8722474 Semiconductor device including stepped gate electrode and fabrication method thereof  
Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the...
8723239 Solid-state imaging element  
A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to...
8716754 Nitride semiconductor device  
The present invention relates to a nitride semiconductor device One aspect of the present invention provides a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG...
8716752 Structure and method for making a strained silicon transistor  
A graded SiGe sacrificial layer is epitaxially grown overlying a silicon substrate. A single crystal silicon layer is then grown by an epitaxial process overlying the graded SiGe layer. A SiGe...
8716803 3-D single floating gate non-volatile memory device  
A 3-D Single Floating Gate Non-Volatile Memory (SFGNVM) device based on the 3-D fin Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The disclosed Non-Volatile Memory (NVM)...
8710551 High electron mobility transistor and manufacturing method thereof  
The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT includes a semiconductor layer, a barrier layer on the semiconductor layer,...
8710548 Semiconductor device and method for manufacturing the same  
A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be...
8709897 High performance strained source-drain structure and method of fabricating the same  
A method for forming a high performance strained source-drain structure includes forming a gate structure on a substrate and forming a pocket implant region proximate to the gate structure....
8710549 MOS device for eliminating floating body effects and self-heating effects  
A SOI MOS device for eliminating floating body effects and self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The...
8709886 Compound semiconductor device and manufacturing method therefor  
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode...
8710550 Semiconductor device with hetero-junction bodies  
A semiconductor device includes a nitride semiconductor stack having at least two hetero junction bodies where a first nitride semiconductor layer and a second nitride semiconductor layer having a...
8703558 Graphene device and method for manufacturing the same  
The invention provides a graphene device structure and a method for manufacturing the same, the device structure comprising a graphene layer; a gate region in contact with the graphene layer;...
8704273 Semiconductor device and method for manufacturing the same, and amplifier  
A semiconductor device includes a nitride semiconductor layer having a (0001) face and a (000-1) face, formed above a common substrate; a (0001) face forming layer provided partially between the...
8703587 Method of manufacturing of a semi-conductor element and semi-conductor element  
A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and...
8698129 Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistor  
An implant free quantum well transistor wherein the doped region comprises an implant region having an increased concentration of dopants with respect to the concentration of dopants of adjacent...
8698198 Nitride semiconductor device  
A nitride semiconductor device includes: a first nitride semiconductor layer formed of non-doped AlXGa1-XN (0≦X<1); a second nitride semiconductor layer formed on the first nitride semiconductor...
8698202 Semiconductor device  
A semiconductor device including at least a p-channel field-effect transistor region formed above a compound semiconductor substrate. The p-channel field-effect transistor region includes an...
8697510 Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling  
A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the...
8697581 III-nitride semiconductor device with trench structure  
A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be...
8698162 Gallium nitride based semiconductor devices and methods of manufacturing the same  
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive...
8698199 FinFET structure  
A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the...
8697506 Heterostructure device and associated method  
A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first...
8692288 Heterojunction bipolar transistors and methods of manufacture  
Semiconductor structures and methods of manufacture semiconductors are provided which relate to heterojunction bipolar transistors. The structure includes two devices connected by metal wires on a...
8680577 Recessed gate field effect transistor  
A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority...
8682116 Integrated circuit including non-planar structure and waveguide  
One embodiment provides an integrated circuit including a first non-planar structure and a waveguide configured to provide electromagnetic waves to the first non-planar structure. The first...
8680580 Field effect transistor and process for manufacturing same  
A field effect transistor includes: a channel layer 103 containing GaN or InGaN; a first electron-supplying layer 104 disposed over the channel layer 103 and containing InxAlyGa1-x-yN (0≦x<1,...
8673754 Method of forming gate dielectric layer and method of fabricating semiconductor device  
A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the...
8674407 Semiconductor device using a group III nitride-based semiconductor  
The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer...
8674408 Reducing source/drain resistance of III-V based transistors  
An integrated circuit structure includes a substrate; a channel layer over the substrate, wherein the channel layer is formed of a first III-V compound semiconductor material; a highly doped...
8669590 Methods and apparatus for forming silicon germanium-carbon semiconductor structures  
Methods and apparatus for forming semiconductor structures are disclosed herein. In some embodiments, a semiconductor structure may include a first germanium carbon layer having a first side and...
8669163 Tunnel field-effect transistors with superlattice channels  
A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate...
8669589 Robust transistors with fluorine treatment  
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the...
8664694 Field effect transistor with narrow bandgap source and drain regions and method of fabrication  
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of...