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8962462 Overvoltage tolerant HFETs  
Design constraints for a self protecting GaN HFET and in general any group III V HFET are described. The design constraints depend on the separation between the gate and the drain and the...
8962428 Method of manufacturing a semiconductor device  
A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gates on a surface of a substrate, forming sidewalls on side...
8963207 Semiconductor device  
A semiconductor device includes a buffer layer, a channel layer and a barrier layer formed over a substrate, a trench penetrating through the barrier layer to reach the middle of the channel...
8963219 Tunnel field effect transistor  
A tunnel field effect transistor and a method of making the same. The transistor includes a semiconductor substrate. The transistor also includes a gate located on a major surface of the...
8963206 Method for increasing fin density  
The present disclosure is directed to a method of manufacturing a FinFET structure in which at least one initial set of fin structures is formed by photolithographic processes, followed by forming...
8956935 Method for manufacturing compound semiconductor device  
A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein...
8957453 Method of manufacturing a semiconductor device and semiconductor device  
A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate...
8957478 Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer  
A semiconductor device having a doped well area includes a doped substrate layer formed on a substrate portion of the semiconductor device. The doped substrate layer extends along a first...
8951871 Semiconductor device and manufacturing method thereof  
This disclosure relates to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a patterned stacked structure formed on a semiconductor substrate, the...
8952352 III-nitride power device  
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
8952420 Method to induce strain in 3-D microfabricated structures  
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin...
8946007 Inverted thin channel mosfet with self-aligned expanded source/drain  
After formation of a gate electrode, a source trench and a drain trench are formed down to an upper portion of a bottom semiconductor layer having a first semiconductor material of a...
8946776 Semiconductor device with selectively etched surface passivation  
A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first...
8946777 Nitride-based transistors having laterally grown active region and methods of fabricating same  
High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown...
8946774 Gallium nitride semiconductor substrate  
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal...
8941072 Silicon drift diode detector configured to switch between pulse height measurement mode and current measurement mode  
A detector with a Silicon Diode and an amplifier, and a feedback element in the form of, for example, a resistor or a diode, switchably connected to the output of the amplifier. When the feedback...
8941118 Normally-off III-nitride transistors with high threshold-voltage and low on-resistance  
A III-nitride transistor includes a III-nitride channel layer, a barrier layer over the channel layer, the barrier layer having a thickness of 1 to 10 nanometers, a dielectric layer on top of the...
8940593 Enhancement-mode GaN MOSFET with low leakage current and improved reliability  
An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO2/Si3N4 gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si3N4...
8941146 Compound semiconductor device and manufacturing method  
A compound semiconductor device includes an electron transit layer; an electron supply layer formed over the electron transit layer; a first recessed portion and a second recessed portion formed...
8941117 Monolithically integrated vertical JFET and Schottky diode  
An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material...
8941147 Transistor formation using cold welding  
A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly...
8937343 Semiconductor device including transistor and method of manufacturing the same  
A semiconductor device includes a gate pattern disposed on a semiconductor substrate, a bulk epitaxial pattern disposed in a recess region formed in the semiconductor substrate at a side of the...
8937335 Gallium nitride devices with aluminum nitride intermediate layer  
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials...
8937337 Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier  
A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type...
8937313 Semiconductor device and method of manufacturing the same  
A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the...
8933485 Compound semiconductor device and method of manufacturing the same  
An embodiment of a compound semiconductor device includes: a Si substrate; a Si oxide layer formed over a surface of the Si substrate; a nucleation layer formed over the Si oxide layer, the...
8933486 GaN based HEMTs with buried field plates  
A transistor with source and drain electrodes formed in contact with an active region and a gate between the source and drain electrodes and in contact with the active region. A first spacer layer...
8928035 Gallium nitride devices with gallium nitride alloy intermediate layer  
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials...
8928037 Heterostructure power transistor with AlSiN passivation layer  
A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first...
8928034 Gallium nitride devices with aluminum nitride alloy intermediate layer  
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials...
8928091 Field-effect-transistor with self-aligned diffusion contact  
Embodiments of the present invention provide an array of fin-type transistors formed on top of an oxide layer. At least a first and a second of the fin-type transistors have their respective...
8928038 Field effect transistor containing a group III nitride semiconductor as main component  
A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate,...
8921950 Semiconductor device  
A semiconductor device includes a gate electrode formed on a nitride semiconductor layer, and a source electrode and a drain electrode provided on the nitride semiconductor layer so as to...
8921172 Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure  
Disclosed are embodiments of a junction field effect transistor (JFET) structure with one or more P-type silicon germanium (SiGe) or silicon germanium carbide (SiGeC) gates (i.e., a SiGe or SiGeC...
8921892 High-performance nitride semiconductor devices  
A method of forming a transistor over a nitride semiconductor layer includes surface-treating a first region of a nitride semiconductor layer and forming a gate over the first region....
8921891 Vertical memory cell string with dielectric in a portion of the body  
Some embodiments include a memory cell string having a body having a channel extending therein and in contact with a source/drain, a select gate adjacent to the body, a plurality of access lines...
8916908 III-nitride heterojunction device  
A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.
8916460 Semiconductor device and method for fabricating the same  
Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second...
8912084 Semiconductor device  
A semiconductor device has a gate electrode including a leg part and a canopy part. A barrier layer is formed on a bottom face of the leg part of the gate electrode. In addition, on the lower...
8912570 High electron mobility transistor and method of forming the same  
A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V...
8912568 Semiconductor device and manufacturing method thereof  
A semiconductor device and manufacturing method therefor includes a Σ-shaped embedded source or drain regions. A U-shaped recess is formed in a Si substrate using dry etching and a SiGe layer is...
8912839 Bridge circuits and their components  
A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode...
8912569 Hybrid transistor  
A hybrid transistor (58) has a substrate (42) with a first (e.g., P type) well region (46) and a second (e.g., N type) well region (44) with an NP or PN junction (43) therebetween. A MOS portion...
8901610 Compound semiconductor device  
The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer...
8901607 Semiconductor device and fabricating the same  
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a gate region, source and drain (S/D) regions separated by the gate region and a first...
8901606 Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer  
A pseudomorphic high electron mobility transistor (pHEMT) comprises: a substrate comprising a Group III-V semiconductor material; buffer layer disposed over the substrate; and a channel layer...
8896026 Semicondutor device  
Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a...
8895421 III-N device structures and methods  
A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and...
8895992 High electron mobility transistor and method of forming the same  
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in...
8890121 Integrated nanowire/nanosheet nanogap and nanopore for DNA and RNA sequencing  
A technique is provided for base recognition in an integrated device is provided. A target molecule is driven into a nanopore of the integrated device. The integrated device includes a nanowire...