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7755172 Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth  
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing...
7755104 FinFET pMOS double gate semiconductor device with uniaxial tensile strain applied to channel by shrinkable gate electrode material, current flow in <110> crystal orientation, and source and drain Schottky contacts with channel and manufacturing method thereof  
A semiconductor device that has a pMOS double-gate structure, has a substrate, the crystal orientation of the top surface of which is (100), a semiconductor layer that is made of silicon or...
7755107 Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels  
According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET...
7750344 Doped aluminum oxide dielectrics  
Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques...
7749828 Method of manufacturing group III Nitride Transistor  
Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor 11 is provided with a supporting substrate 13...
7750369 Nitride semiconductor device  
A nitride semiconductor device according to the present invention includes: a nitride semiconductor laminated structure comprising a first layer made of a Group III nitride semiconductor, a second...
7750368 Memory device  
Disclosed is a memory device and method of operation thereof. The memory device may include a source region and a drain region of a first dopant type, the source and drain regions contain a first...
7745849 Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain  
An enhancement mode III-nitride heterojunction device that includes a region between the gate and the drain electrode thereof that is at the same potential as the source electrode thereof when the...
7745851 Polytype hetero-interface high electron mobility device and method of making  
A high electron mobility device and method of making is provided whereby a two-dimensional electron gas is formed at a hetero-junction or hetero-interface between different polytypes of a...
7745848 Gallium nitride material devices and thermal designs thereof  
Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The...
7741658 Self-aligned super stressed PFET  
The embodiments of the invention comprise a self-aligned super stressed p-type field effect transistor (PFET). More specifically, a field effect transistor comprises a channel region comprising...
7737467 Nitride semiconductor device with a hole extraction electrode  
A nitride semiconductor device comprises: a laminated body; a first and second main electrode provided in a second and third region, respectively, adjacent to either end of the first region on the...
7737466 Semiconductor device and manufacturing method thereof  
A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer...
7736962 Advanced JFET with reliable channel control and method of manufacture  
A junction field effect transistor comprises an insulating layer formed in a substrate. A source region of a first conductivity type is formed on the insulating layer, and a drain region of the...
7737468 Semiconductor devices having recesses filled with semiconductor materials  
Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a...
7732836 Compound semiconductor epitaxial substrate and method for manufacturing the same  
In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layer 9 and AlGaAs layers...
7732837 Nitride semiconductor device  
In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a...
7728354 Semiconductor device  
A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0≦x≦1); a second semiconductor layer of n-type AlyGa1-yN (0
7728353 Semiconductor device in which GaN-based semiconductor layer is selectively formed  
A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate...
7728355 Nitrogen polar III-nitride heterojunction JFET  
An N-polar III-nitride heterojunction JFET which includes a P-type III-nitride body under the gate electrode thereof.
7723749 Strained semiconductor structures  
A method for in situ formation of low defect, strained silicon and a device formed according to the method are disclosed. In one embodiment, a silicon germanium layer is formed on a substrate, and...
7723750 MOSFET with super-steep retrograded island  
The present invention comprises a method for forming a semiconducting device including the steps of providing a layered structure including a substrate, a low diffusivity layer of a...
7723751 Semiconductor device and fabrication method of the same  
A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a...
7718498 Semiconductor device and method of producing same  
A semiconductor device suitable for a source-follower circuit, provided with a gate electrode formed on a semiconductor substrate via a gate insulation film, a first conductivity type layer formed...
7718486 Structures and methods for fabricating vertically integrated HBT-FET device  
Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method...
7714359 Field effect transistor having nitride semiconductor layer  
A field effect transistor includes a nitride semiconductor layer; an InxAlyGa1-x-yN layer (wherein 0
7714360 Surface-stabilized semiconductor device  
A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the...
7705371 Field effect transistor having reduced contact resistance and method for fabricating the same  
A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of...
7700972 Semiconductor device  
A semiconductor device comprises an AlN layer, a GaN layer, and an AlGaN layer sequentially formed on a semiconductor substrate. A first opening extends through said GaN layer and said AlGaN layer...
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor  
A semiconductor structure and method wherein a recess is disposed in a surface portion of a semiconductor structure and a dielectric film is disposed on and in contract with the semiconductor. The...
7687866 Semiconductor device and method of manufacturing semiconductor device  
A semiconductor device includes a semiconductor layer formed partially on a semiconductor substrate by epitaxial growth, an embedded oxide film embedded between the semiconductor substrate and the...
7683400 Semiconductor heterojunction devices based on SiC  
A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC...
7683399 Transistor  
There is provided a normally-off type transistor made of a nitride semiconductor. The transistor includes; an undoped GaN layer which forms a channel region; an undoped Al0.2Ga0.8N layer which is...
7679141 High-quality SGOI by annealing near the alloy melting point  
A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single...
7675090 Semiconductor device having a contact on a buffer layer thereof and method of forming the same  
A semiconductor device and method of forming the same. The semiconductor device includes an epitaxially grown and conductive buffer layer having a contact covering a substantial portion of a...
7675089 Semiconductor device  
In relation to the conventional semiconductor device provided with a plurality of FETs, there is room for improving the pair accuracy of the FET-pair. A semiconductor device includes a first FET,...
7675112 Semiconductor device with a surrounded channel transistor  
The semiconductor device includes a device isolation structure, a surrounded channel structure, and a gate electrode. The device isolation structure is formed in a semiconductor substrate to...
7671358 Plasma implantated impurities in junction region recesses  
A transistor device having a conformal depth of impurities implanted by isotropic ion implantation into etched junction recesses. For example, a conformal depth of arsenic impurities and/or carbon...
7671448 Semiconductor device including two organic semiconductor layers  
It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of...
7663162 Compound semiconductor device and doherty amplifier using compound semiconductor device  
A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an...
7663161 Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same  
A transistor includes: a first semiconductor layer and a second semiconductor layer with a first region and a second region, which are sequentially formed above a substrate; a first p-type...
7659560 Transistor structures  
A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively...
7655546 Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same  
A depletion mode (D-mode) field effect transistor (FET) is monolithically integrated with an enhancement mode (E-mode) FET in a multi-layer structure. The multi-layer structure includes a channel...
7656010 Semiconductor device  
A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the...
7655962 Enhancement mode insulated gate heterostructure field-effect transistor with electrically isolated RF-enhanced source contact  
Aspects of the present invention provide an enhancement mode (E-mode) insulated gate (IG) double heterostructure field-effect transistor (DHFET) having low power consumption at zero gate bias, low...
7652310 Negative resistance field effect device and high-frequency oscillation device  
There is provided a 3-terminal negative differential resistance field effect element having a high output and high frequency characteristic, requiring low power consumption, and preferably having...
7646039 SOI field effect transistor having asymmetric junction leakage  
A source trench and a drain trench are asymmetrically formed in a top semiconductor layer comprising a first semiconductor in a semiconductor substrate. A second semiconductor material having a...
7642568 Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same  
A semiconductor device including a substrate-driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the...
7638818 Robust transistors with fluorine treatment  
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the...
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods  
Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is...