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7851780 Semiconductor buffer architecture for III-V devices on silicon substrates  
A composite buffer architecture for forming a III-V device layer on a silicon substrate and the method of manufacture is described. Embodiments of the present invention enable III-V InSb device...
7847319 Semiconductor device and method for fabricating the same  
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing...
7842972 Low-temperature-grown (LTG) insulated-gate PHEMT device and method  
A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on...
7838905 Semiconductor device having multiple lateral channels and method of forming the same  
A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a...
7834380 Field effect transistor and method for fabricating the same  
A field effect transistor includes a first semiconductor layer made of a multilayer of a plurality of semiconductor films and a second semiconductor layer formed on the first semiconductor layer....
7829916 Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor  
Source and drain electrodes are each formed by an alternation of first and second layers made from a germanium and silicon compound. The first layers have a germanium concentration comprised...
7825400 Strain-inducing semiconductor regions  
A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results...
7825433 MIS-type semiconductor device  
A semiconductor device having a silicide film above source-drain regions comprises an element isolation insulating film which is provided so as to enclose an element forming region of a...
7825434 Nitride semiconductor device  
A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor...
7821030 Semiconductor device and method for manufacturing the same  
A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be...
7821036 Semiconductor device and method for manufacturing the same  
A semiconductor device (10) comprises a substrate (11), a semiconductor layer (12), an insulation film (13), a protective film (15), a source electrode (21), a drain electrode (22), a gate...
7821033 Semiconductor component comprising a drift zone and a drift control zone  
A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from...
7820523 Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor  
The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one...
7821031 Switch circuit, semiconductor device, and method of manufacturing said semiconductor device  
A switch circuit includes: a first FET that is connected to one of an input terminal and an output terminal, and performs ON/OFF operation under the control of a gate electrode connected to a...
7821032 III-nitride power semiconductor device  
An enhancement mode III-nitride power semiconductor device that includes normally-off channels along the sidewalls of a recess and a process for fabricating the same, the device including a first...
7816664 Defect reduction by oxidation of silicon  
A high-quality, substantially relaxed SiGe-on-insulator substrate material which may be used as a template for strained Si is described. The substantially relaxed SiGe-on-insulator substrate...
7816766 Semiconductor device with compressive and tensile stresses  
A semiconductor device includes a gate electrode formed on a silicon substrate in correspondence to a channel region via a gate insulation film, and source and drain regions of p-type formed in...
7816707 Field-effect transistor with nitride semiconductor and method for fabricating the same  
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with...
7812370 Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling  
A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the...
7812371 GaN based semiconductor element  
The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer)...
7812369 Fabrication of single or multiple gate field plates  
A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a...
7808016 Heterogeneous integration of low noise amplifiers with power amplifiers or switches  
A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium...
7808081 Strained-silicon CMOS device and method  
The present invention provides a semiconductor device and a method of forming thereof, in which a uniaxial strain is produced in the device channel of the semiconductor device. The uniaxial strain...
7804110 Field effect transistor with a heterostructure  
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made...
7800133 Semiconductor device and manufacturing method of the same  
In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a...
7800130 Semiconductor devices  
A semiconductor device 10 comprises a heterojunction between a lower semiconductor layer 26 made of p-type gallium nitride and an upper semiconductor layer 28 made of n-type AlGaN, wherein the...
7800132 High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof  
A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating...
7800131 Field effect transistor  
A field effect transistor includes a layer structure made of compound semiconductor (111) provided on a semiconductor substrate (110) made of GaAs or InP, as an operation layer, and employs a...
7795648 Semiconductor device comprising capacitor and method of fabricating the same  
A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to...
7795630 Semiconductor device with oxidized regions and method for fabricating the same  
A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the...
7791064 Semiconductor device and fabrication method thereof  
A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion...
7791106 Gallium nitride material structures including substrates and methods associated with the same  
Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The...
7791107 Strained tri-channel layer for semiconductor-based electronic devices  
A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely...
7783265 Switching element, antenna switch circuit and radio frequency module using the same  
A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio...
7781800 Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer  
Disclosed is a p-type field effect transistor (pFET) structure and method of forming the pFET. The pFET comprises embedded silicon germanium in the source/drain regions to increase longitudinal...
7781801 Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes  
An apparatus includes a field-effect transistor (FET). The FET includes a region of first semiconductor and a layer of second semiconductor that is located on the region of the first...
7776674 Hybrid strained orientated substrates and devices  
A method for forming a semiconductor structure. The method includes providing a semiconductor structure which includes (a) substrate, (b) a first semiconductor region on top of the substrate,...
7777251 Compound semiconductor device and doherty amplifier using compound semiconductor device  
A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an...
7777252 III-V hemt devices  
A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN...
7777305 Nitride semiconductor device and manufacturing method thereof  
It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of...
7767501 Devices using abrupt metal-insulator transition layer and method of fabricating the device  
The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and...
7768035 Semiconductor device and method of manufacturing the same  
A semiconductor device has a semiconductor base of a first conductivity type; a hetero semiconductor region in contact with the semiconductor base; a gate electrode adjacent to a portion of a...
7768036 Integrated circuitry  
This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon...
7763909 Image sensor and method for manufacturing the same  
An image sensor and method for manufacturing the same are provided. The image sensor can include an isolation area and active area on a substrate; a photodiode area and a transistor area provided...
7763910 Semiconductor device and manufacturing method  
A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on...
7759760 Semiconductor switching element and semiconductor circuit apparatus  
A semiconductor switching element, wherein on a semiconductor layer formed on a substrate, or on a semiconductor substrate, a source electrode and a drain electrode are disposed at a predetermined...
7759699 III-nitride enhancement mode devices  
A III-nitride power semiconductor device that includes a nitrogen polar active heterojunction having a two-dimensional electron gas and including a first III-nitride semiconductor body by one band...
7759700 Semiconductor device  
A semiconductor device includes: a first group-III nitride semiconductor layer formed on a substrate; a second group-III nitride semiconductor layer made of a single layer or two or more layers,...
7755103 Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate  
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal...
7755137 Bandgap engineered MOS-gated power transistors  
Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a...