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8309956 Thin film transistor, display unit, and method of manufacturing thin film transistor  
A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate...
8309418 Field effect transistor device with shaped conduction channel  
A field effect transistor device includes a substrate, a silicon germanium (SiGe) layer disposed on the substrate, gate dielectric layer lining a surface of a cavity defined by the substrate and...
8309987 Enhancement mode semiconductor device  
A semiconductor device is disclosed. In one aspect, the device has a first and second active layer on a substrate, the second active layer having a higher bandgap than the first active layer,...
8304808 Electric field read/write head  
Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source...
8304810 Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium  
In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like...
8304809 GaN-based semiconductor device and method of manufacturing the same  
In a GaN-based semiconductor device, an active layer of a GaN-based semiconductor is formed on a silicon substrate. A trench is formed in the active layer and extends from a top surface of the...
8304812 Terahertz wave radiating element  
A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and...
8299499 Field effect transistor  
A field effect transistor includes a Schottky layer; a stopper layer formed of InGaP and provided in a recess region on the Schottky layer; a cap layer provided on the stopper layer and formed of...
8299564 Diffusion regions having different depths  
Formation of transistors, such as, e.g., PMOS transistors, with diffusion regions having different depths for equalization of performance among transistors of an integrated circuit is described....
8299737 Motor driving circuit  
A motor driving circuit includes a three-phase inverter circuit 8, including three upper-arm switching elements 56a to 56c for driving upper arms of different phases of a three-phase motor 3, and...
8294180 CMOS devices with a single work function gate electrode and method of fabrication  
Described herein are a device utilizing a gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is...
8293591 Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device  
A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region...
8294274 Semiconductor contact barrier  
System and method for reducing contact resistance and improving barrier properties is provided. An embodiment includes a dielectric layer and contacts extending through the dielectric layer to...
8288756 Hetero-structured, inverted-T field effect transistor  
The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor...
8288796 Semiconductor device  
One embodiment of a semiconductor device according to the present invention includes a substrate, a base compound semiconductor layer layered on the substrate to form a base, a channel defining...
8288798 Step doping in extensions of III-V family semiconductor devices  
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a buffer layer over a substrate, the buffer layer containing a first compound...
8283699 GaN based HEMTs with buried field plates  
A transistor comprising an active region, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with...
8283700 Field effect transistor and manufacturing method thereof  
A field effect transistor includes a channel layer of group-III nitride-based compound semiconductor; an interface layer formed on the channel layer and of AlXInYGa1-X-YN, where 0≦X≦1, 0≦Y≦1, and...
8283673 Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride  
The present invention relates to a crack-free monocrystalline nitride layer having the composition AlxGa1−xN, where 0≦x≦0.3, and a substrate that is likely to generate tensile stress in the...
8278686 Structure and method for forming planar gate field effect transistor with low resistance channel region  
A vertically-conducting planar-gate field effect transistor includes a silicon region of a first conductivity type, a silicon-germanium layer extending over the silicon region, a gate electrode...
8278688 Compound semiconductor device and manufacturing method thereof  
A compound semiconductor device includes a carrier transit layer including GaN formed over a substrate; a carrier supply layer including GaN formed over the carrier transit layer; a source...
8278685 Semiconductor device used with high frequency band  
A semiconductor device, which reduces the earth inductance, and a fabrication method for the same is provided. The semiconductor device and the fabrication method for the same including: a gate...
8274098 Field effect transistor, logic circuit including the same and methods of manufacturing the same  
Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source...
8269256 Semiconductor device and manufacturing method thereof  
A semiconductor device includes a semiconductor substrate, a gate insulating film formed over the semiconductor substrate, a gate electrode formed on the gate insulating film, a first...
8269259 Gated AlGaN/GaN heterojunction Schottky device  
Some exemplary embodiments of a semiconductor device using a III-nitride heterojunction and a novel Schottky structure and related method resulting in such a semiconductor device, suitable for...
8263477 Structure for use in fabrication of PiN heterojunction TFET  
A method for fabricating a structure for use in fabrication of a PiN heterojunction tunnel field effect transistor (TFET) includes forming an alignment trench in a silicon wafer; forming a silicon...
8264020 Static RAM cell design and multi-contact regime for connecting double channel transistors  
A static RAM cell may be formed on the basis of two double channel transistors and a select transistor, wherein a body contact may be positioned laterally between the two double channel...
8264002 Field-effect transistor  
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with...
8258544 Field-effect transistor  
A field-effect transistor provided with a substrate, a channel layer, a carrier supply layer, a source electrode, a drain electrode, a gate electrode, a first insulating layer that is laminated on...
8258031 Fabrication of a vertical heterojunction tunnel-FET  
Exemplary embodiments include a method for fabricating a heterojunction tunnel field-effect-transistor (FET), the method including forming a gate region on a silicon layer of a...
8258543 Quantum-well-based semiconductor devices  
Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate...
8253167 Method for forming antimony-based FETs monolithically  
An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom...
8253168 Transistors for replacing metal-oxide-semiconductor field-effect transistors in nanoelectronics  
Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing...
8247843 GaN-based permeable base transistor and method of fabrication  
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
8241983 Method of making a hetero tunnel field effect transistor  
Embodiments of the present disclosure provide a method to fabricate a hetero-junction in a Tunnel Field Effect Transistor (TFET) device configuration (e.g. in a segmented nanowire TFET). Since in...
8237196 Semiconductor device  
A semiconductor device includes: a first semiconductor layer of non-doped AlXGa1-XN (0≦X<1); a second semiconductor layer of non-doped or n-type AlYGa1-YN (0
8237195 Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate  
A field effect transistor device having a strained semiconductor channel region overlying a heterostructure-semiconductor on a metal substrate includes a first semiconductor layer overlying a...
8232560 Light-emitting diode in semiconductor material  
A light-emitting diode including: a structure in a semiconductor material of first conductivity type, wherein the structure has a first face of which a first region is in contact with a pad of...
8227834 Semiconductor device  
A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X
8227833 Dual layer gate dielectrics for non-silicon semiconductor devices  
Non-silicon metal-insulator-semiconductor (MIS) devices and methods of forming the same. The non-silicon MIS device includes a gate dielectric stack which comprises at least two layers of...
8222673 Self-aligned embedded SiGe structure and method of manufacturing the same  
A low energy surface is formed by a high temperature anneal of the surfaces of trenches on each side of a gate stack. The material of the semiconductor layer reflows during the high temperature...
8222675 Nitride semiconductor device including gate insulating portion containing AIN  
A nitride semiconductor device 2 comprises a nitride semiconductor layer 10. A gate insulating film 16 is formed on the surface of the nitride semiconductor layer 10. The gate insulating film 16...
8217424 Semiconductor device having stacked InGaP and GaAs layers, and method of making same  
It is desired for semiconductor devices to reduce leakage currents. In a semiconductor device having a stacked structure including a GaAs layer and an InGaP layer, p-type impurity is doped to the...
8213072 Electrofluidic display device and driving method thereof  
An electrofluidic display device including a first structure layer and a second structure layer is provided. The first structure layer includes a first substrate. A trench structure layer is...
8212289 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions  
Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to...
8212288 Compound semiconductor substrate comprising a multilayer buffer layer  
A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer...
8212290 High temperature performance capable gallium nitride transistor  
A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a...
8212336 Field effect transistor source or drain with a multi-facet surface  
FET configurations in which two (or more) facets are exposed on a surface of a semiconductor channel, the facets being angled with respect to the direction of the channel, allow for conformal...
8207523 Metal oxide semiconductor field effect transistor with strained source/drain extension layer  
A method of fabrication of a metal oxide semiconductor field effect transistor is disclosed. At first, a substrate on which a gate structure is formed is provided. Afterward, a portion of the...
8203172 Nitride semiconductor device  
A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger...