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7633083 Metamorphic buffer on small lattice constant substrates  
A semiconductor device is supported by a substrate with a smaller lattice constant. A metamorphic buffer provides a transition from the smaller lattice constant of the substrate to the larger...
7629627 Field effect transistor with independently biased gates  
A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate...
7605407 Composite stressors with variable element atomic concentrations in MOS devices  
A semiconductor device includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor adjacent the gate stack and having at least a portion in the semiconductor...
7589347 Method for fabricating lateral semiconductor device  
A lateral junction semiconductor device and method for fabricating the same comprising the steps of taking a semiconductor structure having a stack formed by a plurality of layers of semiconductor...
7566913 Gallium nitride material devices including conductive regions and methods associated with the same  
Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an...
7560355 Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same  
A method is provided of making a semiconductor wafer for a semiconductor junction diode device having a target forward voltage drop and a target reverse breakdown voltage. The method begins by...
7557388 MOSFET formed on a strained silicon layer  
A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer...
7541232 Method for fabrication of devices in a multi-layer structure  
A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and...
7531397 Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes  
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a...
7514726 Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy  
A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al 2 O...
7504672 Separate absorption and detection diode  
A photodiode for detection of preferably infrared radiation wherein photons are absorbed in one region and detected in another. In one example embodiment, an absorbing P region is abutted with an N...
7495314 Ohmic contact on p-type GaN  
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type...
7495267 Semiconductor structure having a strained region and a method of fabricating same  
A semiconductor structure including a highly strained selective epitaxial top layer suitable for use in fabricating a strained channel transistor. The top layer is deposited on the uppermost of a...
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same  
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the...
7495266 Strained silicon-on-silicon by wafer bonding and layer transfer  
A semiconductor-based structure includes first and second layers bonded directly to each other at an interface. Parallel to the interface, the lattice spacing of the second layer is different than...
7491612 Field effect transistor with a heterostructure and associated production method  
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made...
7459730 Separate absorption and detection diode for VLWIR  
A photodiode for detection of preferably very long wavelength infrared radiation wherein low energy photons are absorbed in one region and detected in another. In one example embodiment, an...
7432541 Metal oxide semiconductor field effect transistor  
A metal oxide semiconductor field effect transistor (MOSFET) is disclosed. The MOSFET includes a semiconductor substrate, a germanium layer formed by implanting germanium (Ge) ions into the...
7423292 Semiconductor device, EL display device, liquid crystal display device, and calculating device  
There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer...
7394111 Strained Si/SiGe structures by ion implantation  
One aspect of this disclosure relates to a method for forming a strained silicon over silicon germanium (Si/SiGe) structure. In various embodiments, germanium ions are implanted into a silicon...
7375385 Semiconductor heterostructures having reduced dislocation pile-ups  
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by...
7368308 Methods of fabricating semiconductor heterostructures  
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by...
7365374 Gallium nitride material structures including substrates and methods associated with the same  
Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The...
7348608 Planar avalanche photodiode  
A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact...
7349248 Non-volatile memory  
A non-volatile memory cell includes an upper electrode; a lower electrode and a state-variable region, in which a conductive state changes only once. The state variable region is formed in a region...
7339255 Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes  
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a...
7309876 Organic semiconductor having polymeric and nonpolymeric constituents  
A composition, comprising organic polymer molecules, and organic nonpolymeric molecules, wherein the composition is a semiconducting solid. The composition includes a distribution of crystal...
7301180 Structure and method for a high-speed semiconductor device having a Ge channel layer  
The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained...
7235821 Optical device with quantum well  
An optical device with a quantum well is provided. The optical device includes an active layer made of a Group III-V semiconductor compound and having a quantum well of a bandgap grading structure...
7224007 Multi-channel transistor with tunable hot carrier effect  
A multiple channel transistor provides a transistor with an improved drive current and speed by using tunable hot carrier effects. A thin gate oxide has a carrier confinement layer formed on top...
7214598 Formation of lattice-tuning semiconductor substrates  
In order to reduce dislocation pile-ups in a virtual substrate, a buffer layer 32 is provided, between an underlying Si substrate 34 and an uppermost constant composition SiGe layer 36 , which...
7202503 III-V and II-VI compounds as template materials for growing germanium containing film on silicon  
An assembly comprising a semiconductor substrate having a first lattice constant, an intermediate layer having a second lattice constant formed on the semiconductor substrate, and a virtual...
7170105 Type II interband heterostructure backward diodes  
A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A...
7170108 Semiconductor light-emitting device and method for fabricating the same  
An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer...
7164169 Semiconductor device having high-permittivity insulation film and production method therefor  
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the...
7148518 Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device  
A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature...
7138649 Dual-channel CMOS transistors with differentially strained channels  
A semiconductor structure having a substrate with a surface layer including strained silicon. The surface layer has a first region with a first thickness less than a second thickness of a second...
7091522 Strained silicon carbon alloy MOSFET structure and fabrication method thereof  
A MOSFET structure utilizing strained silicon carbon alloy and fabrication method thereof. The MOSFET structure includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon...
7078741 Enhanced photodetector  
The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type...
7078723 Microelectronic device with depth adjustable sill  
A microelectronic device includes a substrate, and a patterned feature located over the substrate and a plurality of doped regions, wherein the patterned feature includes at least one electrode....
7061118 Semiconductor device, stacked semiconductor device, methods of manufacturing the same, circuit board, and electronic instrument  
A method of manufacturing a semiconductor device having a connection terminal and a substrate on which a circuit section and an electrode are stacked in this order, the circuit section having a...
7049627 Semiconductor heterostructures and related methods  
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by...
7038250 Semiconductor device suited for a high frequency amplifier  
According to the present invention, there is a provided a semiconductor device having, a collector contact layer made of an n-type GaAs layer; a first collector layer formed on the collector...
7038254 Hetero-junction bipolar transistor having a transition layer between the base and the collector  
This invention provides a double hetero-junction bipolar transistor (DHBT) in which a probability of the impact ionization at the interface between the base and the collector is reduced, thereby...
7009224 Metamorphic long wavelength high-speed photodiode  
A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at...
7009225 Heterojunction bipolar transistor with a base layer that contains bismuth  
A heterojunction bipolar transistor (HBT) with improved characteristics is provided. A III–V compound semiconductor having Bi added thereto is used for a base layer of a GaAs-based or InP-based...
6987310 Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor device  
A multi-layered structure of a semiconductor device includes a substrate, and a heteroepitaxial layer having a low dislocation defect density on the substrate. The heteroepitaxial layer consists of...
6974977 Heterojunction bipolar transistor  
A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with...
6967360 Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof  
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs...
6956250 Gallium nitride materials including thermally conductive regions  
The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor...
Matches 1 - 50 out of 286 1 2 3 4 5 6 >