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7626193 Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor  
A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus...
7612431 Trench polysilicon diode  
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second...
7542258 DV/dt-detecting overcurrent protection circuit for power supply  
An overcurrent protection circuit for a power switching transistor wherein the power switching transistor has a control electrode and two main electrodes, the circuit comprising a circuit including...
7511357 Trenched MOSFETs with improved gate-drain (GD) clamp diodes  
A MOSFET device that includes a first Zener diode connected between a gate metal and a drain metal of said semiconductor power device for functioning as a gate-drain (GD) clamp diode. The GD clamp...
7417282 Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode  
The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions...
7381998 Semiconductor integrated circuit device  
A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island...
7285805 Low reference voltage ESD protection device  
In a low voltage ESD protection device, an extra control electrode is created by not connecting the n+ drain and p+ emitter regions of the LVTSCR, and controlling the control electrode by means of...
7262442 Triac operating in quadrants Q1 and Q4  
A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a...
7112828 Semiconductor device  
A semiconductor device that permits an increase in static destruction resistance while preventing an increase in the chip size includes a protective element formed by a polysilicon layer in which...
6987290 Current-jump-control circuit including abrupt metal-insulator phase transition device  
A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive...
6963088 Semiconductor component  
A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial...
6921931 Electrostatic discharge protection element  
A the present invention provides an electrostatic discharge protection element to be used in a semiconductor integrated circuit providing MOSFET, comprising a thyristor and a trigger diode for...
6921930 Pulse-controlled bistable bidirectional electronic switch  
The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR;...
6897492 Power device with bi-directional level shift circuit  
A gate driver includes a control signal generator having a first input and configured to output a gate control signal to a power semiconductor switch. The gate control signal generator is provided...
6838708 I/O cell and ESD protection circuit  
An ESD protection circuit has a VDD bus, a VSS bus, an IC pad, a PMOS transistor coupled to the IC pad and the VDD bus, and an NMOS transistor coupled to the IC pad and the VSS bus. The pitch of...
6791161 Precision Zener diodes  
The present invention is directed to a novel semiconductor device, which can be efficiently fabricated for use in Zener diode applications. Precision Zener diodes and the method for manufacturing...
6790713 Method for making an inlayed thyristor-based device  
A semiconductor device having a thyristor is manufactured and arranged in a manner that reduces or eliminates difficulties commonly experienced in the formation and implementation of such devices....
6762461 Semiconductor element protected with a plurality of zener diodes  
A protective circuit for protecting an IGBT from a stress due to application of an overvoltage which is induced by a surge such as static electricity is provided. The protective circuit allows for...
6759692 Gate driver with level shift circuit  
A gate driver includes a gate control signal generator having a first input and configured to output a gate control signal to a power semiconductor switch and a first sub-circuit having a first...
6707110 Layout configurable electrostatic discharge device for integrated circuits  
Electrostatic discharge protection device comprising a first highly p-doped region with a base contact, a first highly n-doped region with a collector contact, a second highly n-doped region with...
6696708 Electrostatic discharge protection apparatus  
The present invention reveals an electrostatic discharge protection apparatus including a silicon controlled rectifier, a triggering voltage adapter network and a holding voltage adapter network....
6696701 Electrostatic discharge protection for pixellated electronic device  
An electronic device ( 10 ) comprises an array of pixels ( 12 ), arranged in rows and columns ( 14,16 ) with row and column address lines ( 18,20 ) for addressing each pixel ( 12 ). Each row and...
6614073 SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES  
A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are...
6603153 Fast recovery diode and method for its manufacture  
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer...
6593600 Responsive bidirectional static switch  
A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical...
6576934 Embedded SCR protection device for output and input pad  
An embedded SCR in conjunction with a Gated-NMOS is created for protecting a chip input or output pad from ESD, by inserting a p+ diffusion and the n-well in the drain side and a part of the drain...
6555878 Umos-like gate-controlled thyristor structure for ESD protection  
Described is a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and...
6495866 Semiconductor device for preventing an increased clamp voltage in an ignition circuit  
Providing a semiconductor device for use in a ignition circuit, which prevents an increase in clamp voltage and allows application of a constant voltage across an ignition plug. In a semiconductor...
6433407 Semiconductor integrated circuit  
A protection circuit in a semiconductor integrated circuit having a master slice I/O circuit comprises an internal circuit, a pad, and a desired number of protection elements connected in parallel...
6396084 Structure of semiconductor rectifier  
A semiconductor rectifier includes a substrate of a first conductivity type; a current path layer of the first conductivity type formed near the surface of the substrate; a current block layer of a...
6380566 Semiconductor device having FET structure with high breakdown voltage  
An N-MOSFET is formed on an SOI substrate consisting of a semiconductor substrate, an insulating layer and an n − -active layer. A p-well layer, an n-RESURF layer, and an n-diffusion layer are...
6291879 Integrated circuit chip with improved locations of overvoltage protection elements  
On a semiconductor integrated circuit chip, multiple equipotential power-line conductors are provided to supply power to circuit elements. First protecting elements are provided for interconnecting...
6081002 Lateral SCR structure for ESD protection in trench isolated technologies  
A protection device for trench isolated technologies. The protection device includes a lateral SCR (100) that incorporates a triggering MOS transistor (120) with a first gate electrode (116)...
6066864 Thyristor with integrated dU/dt protection  
6037613 Bidirectional thyristor device  
In a bidirectional photothyristor formed on a single N type silicon substrate, a distance between a P-gate diffusion region of one thyristor and an anode diffusion region of another thyristor...
6008508 ESD Input protection using a floating gate neuron MOSFET as a tunable trigger element  
Disclosed is a floating gate neuron MOS transistor that may be incorporated into devices such as low voltage silicon control rectifiers for protection of internal circuits against electrostatic...
5998813 Component for protecting telephone line interfaces  
A monolithic component for protection against over-currents liable to occur on a line in series with which is connected a detection resistor, comprises a first cathode-gate thyristor associated...
5986290 Silicon controlled rectifier with reduced substrate current  
The invention provides a silicon controlled rectifier having an anode and a cathode and including an NPN transistor and a PNP transistor. The NPN transistor has an emitter coupled to the cathode, a...
5850095 ESD protection circuit using zener diode and interdigitated NPN transistor  
The present invention provides a high efficiency ESD circuit that requires less space through uniform activation of multiple emitter fingers of a transistor structure containing an integral Zener...
5808326 Delta protection component  
A protection semiconductor component includes at least two pairs of main Shockley diodes, each pair including two parallel diodes, head-to-tail connected between a front surface metallization and a...
5767537 Capacitively triggered silicon controlled rectifier circuit  
An SCR circuit formed on a semiconductor substrate includes a well region, a first diffusion region and a second diffusion region in the well region, and a third diffusion region in the substrate....
5747836 Semiconductor integrated circuit provided with thyristor  
A dV/dt clamp circuit is connected to a base of a phototransistor for triggering a control electrode of a thyristor, thereby making an attempt to prevent an operation error. A control electrode...
5719420 Insulated gate type semiconductor device having built-in protection circuit  
A semiconductor substrate is partitioned into a main IGBT region and a protection circuit region by a p-type well portion which is formed therebetween in contact with an emitter electrode and which...
5637886 Thyristor with improved dv/dt resistance  
When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I 10 to I 30 ) which are responsive to junction capacitances (C 10 to C...
5576557 Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits  
An electrostatic discharge (ESD) circuit for protecting a semiconductor integrated circuit (IC) device is disclosed. One ESD circuit is located between each I/O buffering pad that connects to one...
5569940 AC switch triggered at a predetermined half-period  
An a.c. switch includes across first and second main terminals a first thyristor disposed in parallel with, but in an opposite direction of, a first diode and in series with a second thyristor...
5485024 Electrostatic discharge circuit  
An ESD protection circuit which provides protection for CMOS devices against ESD potentials of up to about 10 kV is provided. The ESD protection circuit is able to provide protection against both...
5477064 Thyristor  
An object of the present invention is to provide a semiconductor device which is designed so as to increase a maximum controllable current and decrease hold current without degrading its...
5424563 Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices  
The sensitivity of breakdown voltage to temperature and dV/dT induced currents is reduced in semiconductor power devices having a wide base transistor. The sensitivity is reduced by diverting...
5412227 MOS-controlled thyristor with non-planar geometry  
A non-planar MOS-controlled thyristor (MCT) which improved turn-off capabilities. The unique non-planar geometry brings the MOS channel region closer to the active thyristor junction, thereby...
Matches 1 - 50 out of 143 1 2 3 >