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7432555 |
Testable electrostatic discharge protection circuits
A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection...
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7427787 |
Guardringed SCR ESD protection
Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for...
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7425733 |
Semiconductor apparatus with electrostatic protective device
A semiconductor apparatus includes an electrostatic protective device having PN junction with N-type Si and P-type SiGe. The electrostatic protective device is directly connected with a terminal to...
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7405435 |
Semiconductor device having electrostatic destruction protection circuit using thyristor as protection element
A semiconductor device includes a thyristor, trigger circuit and surge detection/leakage reduction circuit. The anode of the thyristor is connected to a first terminal and the cathode thereof is...
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7402892 |
Printed circuit board for connecting of multi-wire cabling to surge protectors
A printed circuit board assembly for coupling a plurality of surge protectors to multi-line communication cables includes a multi-layer printed circuit board, to which has been mounted at least two...
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7402887 |
Semiconductor device having fuse area surrounded by protection means
A semiconductor device has a semiconductor substrate, first and second insulating layers, a fuse, a diffusion layer and a conductive pattern. The first insulating layer is selectively formed on a...
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7402867 |
Semiconductor device
In a semiconductor device, a plurality of first diffusion regions of a first conductive type are formed on a diffusion layer well of the first conductive type. A plurality of second diffusion...
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7372153 |
Integrated circuit package bond pad having plurality of conductive members
An integrated circuit package bond pad includes an insulating layer and an electrode located over the insulating layer. The electrode has a first surface configured to be bonded to external...
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7372083 |
Embedded silicon-controlled rectifier (SCR) for HVPMOS ESD protection
A high voltage p-type metal oxide semiconductor (HVPMOS) device having electrostatic discharge (ESD) protection functions and a method of forming the same are provided. The HVPMOS includes a PMOS...
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7368761 |
Electrostatic discharge protection device and fabrication method thereof
An electrostatic discharge (ESD) protection device and a fabrication method thereof are provided. The ESD protection device with an embedded high-voltage P type SCR (EHVPSCR) structure of the...
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7361957 |
Device for electrostatic discharge protection and method of manufacturing the same
The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes...
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7355250 |
Electrostatic discharge device with controllable holding current
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped...
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7352032 |
Output driver with split pins
The drains of the PMOS transistor and the NMOS transistor of a driver are separated and connected to two spaced-apart pins. The spaced-apart pins provide ESD protection to the NMOS transistor,...
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7352014 |
Semiconductor device based on a SCR
The present invention provides a semiconductor structure device having a first and a second semiconductor devices with a silicon controlled rectifier (SCR) formed between the two devices with...
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RE40163 |
Semiconductor light-emitting element
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is...
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7345326 |
Electric signal transmission line
An electric signal transmission line includes a signal electrode portion, a ground electrode portion and a dielectric portion formed on a semiconductor substrate. The signal electrode portion has a...
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7342281 |
Electrostatic discharge protection circuit using triple welled silicon controlled rectifier
Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate...
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7329926 |
Semiconductor device with constricted current passage
A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that...
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7329925 |
Device for electrostatic discharge protection
A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor...
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7309883 |
Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same
A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a...
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7294892 |
Multi-transistor layout capable of saving area
A multi-transistor layout capable of saving area includes a substrate; a common drain comprising four sides formed over the substrate; four gates formed over the four sides of the common drain; and...
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7291870 |
Electrostatic protection circuit
An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well...
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7288450 |
General protection of an integrated circuit against permant overloads and electrostatic discharges
In an integrated circuit, a diode is interposed between the semiconductor substrate and the contact pad to an external bias voltage, and the substrate is biased at an internal voltage reference....
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7285805 |
Low reference voltage ESD protection device
In a low voltage ESD protection device, an extra control electrode is created by not connecting the n+ drain and p+ emitter regions of the LVTSCR, and controlling the control electrode by means of...
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7279724 |
Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
A metal oxide varistor comprising one or more zinc oxide layers is formed integral to a ceramic substrate to provide ESD protection of a semiconductor device mounted to the substrate. The portion...
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7274071 |
Electrostatic damage protection device with protection transistor
This invention provides an electrostatic damage protection device which can protects a device to be protected enough from an electrostatic damage and prevents damages of protection transistors...
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7274048 |
Substrate based ESD network protection for a flip chip
In accordance with the objectives of the invention a new arrangement is provided for ESD protection of mounted flip chips. In a first embodiment of the invention, the Input/Output cells and power...
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7274047 |
Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation
An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR)...
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7256434 |
Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP...
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7253453 |
Charge-device model electrostatic discharge protection using active device for CMOS circuits
An integrated circuit for providing electrostatic discharge protection that includes a contact pad, a CMOS device including a transistor having a substrate, and a CDM clamp for providing...
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7250660 |
ESD protection that supports LVDS and OCT
Circuits are described that provide electrostatic discharge protection for I/O circuits that support the low voltage differential signaling (LVDS) and on-chip termination (OCT) standards. At least...
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7250659 |
Semiconductor component with ESD protection
The semiconductor component has ESD protective elements configured outside the semiconductor body. The ESD protective elements connect an additional conductor track that carries a reference...
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7247543 |
Decoupling capacitor
A decoupling capacitor with increased resistance to electrostatic discharge (ESD) is provided on an integrated circuit (IC). The capacitor may be single or multi-fingered. In one example, the...
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7244993 |
Driving circuit
A driving circuit and a data-line driver is provided which are capable of improving the tolerance to noise between adjacent terminals by using a conventional CMOS process while keeping the chip...
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7244970 |
Low capacitance two-terminal barrier controlled TVS diodes
A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the...
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7238969 |
Semiconductor layout structure for ESD protection circuits
A semiconductor layout structure for an electrostatic discharge (ESD) protection circuit is disclosed. The semiconductor layout structure includes a first area, in which one or more devices are...
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7235846 |
ESD protection structure with SiGe BJT devices
The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT)...
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7227238 |
Integrated fuse with regions of different doping within the fuse neck
An integrated fuse has regions of different doping located within a fuse neck. The integrated fuse includes a polysilicon layer and a silicide layer. The polysilicon layer includes first and second...
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7217984 |
Divided drain implant for improved CMOS ESD performance
A divided drain implant structure for transistors used for electrostatic discharge protection is disclosed. At least two transistors are formed close to each other on a substrate with their gates...
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7217980 |
CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection
An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present...
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7217979 |
Semiconductor apparatus including a radiator for diffusing the heat generated therein
A semiconductor apparatus is provided that includes a radiator for efficiently radiating heat generated in a wiring layer used in a surge current path of an electrostatic discharge protection...
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7215005 |
Bipolar ESD protection structure
The invention describes the fabrication and structure of an ESD protection device for integrated circuit semiconductor devices with improved ESD protection and resiliency. A vertical bipolar npn...
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7211843 |
System and method for programming a memory cell
The present invention relates to systems and methods for programming a memory cell. More specifically, the present invention relates to a controlled application of current to a memory cell over a...
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7208776 |
Fuse corner pad for an integrated circuit
A fuse corner pad is part of an integrated circuit that includes a built-in fuse contact and a plurality of auxiliary pads. The fuse contact is a conductive metallic or metalloid structure that is...
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7205612 |
Fully silicided NMOS device for electrostatic discharge protection
A device and method are described for forming a grounded gate NMOS (GGNMOS) device used to provide protection against electrostatic discharge (ESD) in an integrated circuit (IC). The device is...
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7205611 |
Semiconductor device including a protection circuit
A semiconductor device includes a protection circuit protecting a semiconductor integrated circuit from electrostatic discharge, the protection circuit has a detection circuit detecting the...
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7205588 |
Metal fuse for semiconductor devices
A method of forming a metal fuse comprising the following steps. A structure is provided having exposed adjacent metal structures. A patterned dielectric layer is formed over the structure. The...
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7205581 |
Thyristor structure and overvoltage protection configuration having the thyristor structure
A thyristor structure having a first terminal, formed as a first region with a first conductivity type, is provided. A second region of a second conductivity type adjoins the first region. A third...
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7202114 |
On-chip structure for electrostatic discharge (ESD) protection
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon...
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7196378 |
Electrostatic-protection dummy transistor structure
A semiconductor apparatus where output and protection transistors are different in transistor structure, and where, even when breakdown in the output transistor occurs earlier than in the...
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