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9041054 High holding voltage electrostatic discharge protection device  
A high holding voltage (HV) electrostatic discharge (ESD) protection circuit comprises a silicon controlled rectifier (SCR) device and compensation regions located within the length between the...
9029910 Programmable SCR for ESD protection  
A programmable semiconductor controlled rectifier (SCR) circuit is disclosed. The SCR includes a first terminal (310) and a second terminal (308). A first lightly doped region (304) having a first...
9029952 Semiconductor structure and method of manufacturing the same  
A semiconductor structure includes a substrate, a first well having a first conductive type, a second well having a second conductive type, a body region, a first doped region, a second doped...
9006783 Silicon controlled rectifier with integral deep trench capacitor  
Device structures and design structures that include a silicon controlled rectifier, as well as fabrication methods for such device structures. A well is formed in the device layer of a...
9000481 Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage  
A low capacitance transient voltage suppressor with reduced clamping voltage includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first...
8994110 Semiconductor integrated circuit with TSV bumps  
A semiconductor integrated circuit is provided. In the semiconductor integrated circuit, each of ESD protection circuitries is disposed between two of TSV bumps arrayed in a matrix, the two being...
8994068 ESD protection device  
An electrostatic discharge protection clamp adapted to limit a voltage appearing across protected terminals of an integrated circuit to which the electrostatic discharge protection clamp is...
8987779 Electrostatic discharge protection device  
An ESD protection device including second P-type wells, first P+-type doped regions, first N+-type doped regions and a P-type substrate having a first P-type well, an N-type well and an N-type...
8987778 On-chip electrostatic discharge protection for a semiconductor device  
Embodiments of the invention provide increased ESD protection suitable for high-voltage devices. In one embodiment, an internal DMOS circuit is placed in parallel with a lateral NPN ESD clamp. The...
8982581 Electro-static discharge protection for die of a multi-chip module  
Electro-static discharge (“ESD”) protection for a die of a multi-chip module is described. A contact has an externally exposed surface after formation of the die and prior to assembly of the...
8981425 Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)  
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main Zener diode for...
8981426 Electrostatic discharge protection device  
The invention discloses an ESD protection circuit, including a P-type substrate; an N-well formed on the P-type substrate; a P-doped region formed on the N-well, wherein the P-doped region is...
8975099 ESD protection device and method for manufacturing the same  
An ESD protection device is manufactured such that its ESD characteristics are easily adjusted and stabilized. The ESD protection device includes an insulating substrate, a cavity provided in the...
8975661 Asymmetrical bidirectional protection component  
An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first...
8970004 Electrostatic discharge devices for integrated circuits  
A junction diode array is disclosed for use in protecting integrated circuits from electrostatic discharge. The junction diodes integrate symmetric and asymmetric junction diodes of various sizes...
8969914 ESD power clamp with stable power start up function  
An integrated circuit including a first power rail, a second power rail, a power clamp connected between the first and second power rails; and a trigger circuit connected to the power clamp and...
8963253 Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection  
A bi-directional electrostatic discharge (ESD) protection device may include a substrate, an N+ doped buried layer, an N-type well region and two P-type well regions. The N+ doped buried layer may...
8963200 Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection  
Methods and apparatus for increased holding voltage SCRs. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of the first conductivity type; a...
8963202 Electrostatic discharge protection apparatus  
A semiconductor ESD protection apparatus comprises a substrate; a first doped well disposed in the substrate and having a first conductivity; a first doped area having the first conductivity...
8956924 Method of forming a semiconductor device including a silicon controlled rectifier  
A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device...
8956925 Silicon controlled rectifier structure with improved junction breakdown and leakage control  
Device structures and design structures for a silicon controlled rectifier, as well as methods for fabricating a silicon controlled rectifier. The device structure includes first and second layers...
8952456 Electrostatic discharge circuit using inductor-triggered silicon-controlled rectifier  
A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first...
8946770 Semiconductor device with output circuit and pad  
The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor...
8941181 Compensated well ESD diodes with reduced capacitance  
An integrated circuit with a shallow trench isolated, low capacitance, ESD protection diode. An integrated circuit with a gate space isolated, low capacitance, ESD protection diode. An integrated...
8933483 Semiconductor device  
Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an...
8933513 Semiconductor device  
A semiconductor device is disclosed with a protection device formed of a parasitic bipolar transistor, a parasitic diode and a parasitic resistance and operated at a lowered operating voltage to...
8928033 Semiconductor device  
A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection...
8928084 ESD protection device and method of forming an ESD protection device  
An ESD protection device, which is arranged to be active at a triggering voltage (Vt1) for providing ESD protection, comprises a first region of the first conductivity type formed in a...
8916426 Passive devices for FinFET integrated circuit technologies  
Device structures, design structures, and fabrication methods for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated...
8908334 Electrostatic discharge protection for a magnetoresistive sensor  
A magneto-resistive (MR) sensor protection circuit is disclosed, for the protection of an MR sensor. The MR sensor may have a safe operating voltage range, a normal operating voltage range within...
8907443 Semiconductor device  
In order to suppress an off leak current of an off transistor for ESD protection, in an NMOS for ESD protection whose isolation region has a shallow trench structure, a drain region is placed...
8907373 Electronic device for protecting from electrostatic discharge  
A protection device includes a triac and triggering units. Each triggering unit is formed by a MOS transistor configured to operate at least temporarily in a hybrid operating mode and a...
8901601 Vertical power component  
A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in...
8896023 Silicon devices/heatsinks stack assembly and a method to pull apart a faulty silicon device in said stack assembly  
The invention concerns a silicon devices/heatsinks stack assembly and a method to pull apart a faulty silicon device in said stack assembly. Said silicon devices/heatsinks stack assembly comprises...
8896024 Electrostatic discharge protection structure and electrostatic discharge protection circuit  
Provided is an electrostatic discharge (ESD) protection structure including a first and a second well region adjacent to each other, a first and a second doped region disposed in the first well...
8896064 Electrostatic discharge protection circuit  
An electrostatic discharge (ESD) protection structure comprises a high voltage P type implanted region disposed underneath an N+ region. The high voltage P type implanted region and the N+ region...
8890248 Bi-directional ESD protection circuit  
An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising a first transistor with an integrated silicon-controlled rectifier (SCR) coupled...
8890205 Semiconductor component and an operating method for a protective circuit against light attacks  
A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor...
8878241 Semiconductor structure and manufacturing method for the same and ESD circuit  
A semiconductor structure and manufacturing method for the same, and an ESD circuit are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped...
8872223 Programmable SCR for ESD protection  
A programmable semiconductor controlled rectifier (SCR) circuit is disclosed. The SCR includes a first terminal (310) and a second terminal (308). A first lightly doped region (304) having a first...
8866229 Semiconductor structure for an electrostatic discharge protection circuit  
An embodiment of a semiconductor structure for an electrostatic discharge (“ESD”) protection circuit is disclosed. For this embodiment, there is a substrate of a first polarity type. A device area...
8860082 Transient voltage suppressor circuit, and diode device therefor and manufacturing method thereof  
The present invention discloses a transient voltage suppressor (TVS) circuit, and a diode device therefor and a manufacturing method thereof. The TVS circuit is for coupling to a protected circuit...
8860081 Semiconductor device  
To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit...
8847275 Electronic device for protection against electrostatic discharges, with a concentric structure  
The component incorporates, in topological terms, a scalable number of triac structures in a concentric annular arrangement. The component can be used with an electronic device to protect against...
8841174 Silicon controlled rectifier with integral deep trench capacitor  
Device structures and design structures that include a silicon controlled rectifier, as well as fabrication methods for such device structures. A well is formed in the device layer of a...
8829565 High voltage electrostatic discharge protection device  
An electrostatic discharge protection device is provided. The electrostatic discharge protection device can include a semiconductor substrate having a first well and a second well, a silicon...
8816390 System and method for an electronic package with a fail-open mechanism  
In accordance with an embodiment, a semiconductor package includes a first surface configured to be mounted on a circuit board, and a region of thermally expandable material configured to push the...
8816389 Overvoltage and/or electrostatic discharge protection device  
An overvoltage protection devices operable to provide protection against overvoltage events of positive and negative polarity, comprising: an N P N semiconductor structure defining: a first N-type...
8809905 Vertical BJT and SCR for ESD  
An electrostatic discharge (ESD) protection device includes a well region formed from semiconductor material with a first doping type and a floating base formed from semiconductor material with a...
8809986 Semiconductor device  
Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current. In the semiconductor device, at least one of an...