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8164753 Alignment mark arrangement and alignment mark structure  
An alignment mark arrangement includes: a first alignment pattern comprising a plurality of parallel first stripes on a substrate, wherein each of the first stripes includes a first dimension; and...
8138495 Film stress management for MEMS through selective relaxation  
An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of...
8129711 Nitride semiconductor light emitting device and fabrication method thereof  
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same...
8124989 Light optoelectronic device and forming method thereof  
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes...
8124959 High hole mobility semiconductor device  
One embodiment of the invention includes a high hole mobility p-channel GaAsySb1-y quantum well with a silicon substrate and an InxAl1-xAs barrier layer.
8093583 Light emitting diode having barrier layer of superlattice structure  
A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a...
8058661 Semiconductor light emitting device  
A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top...
8058641 Copper blend I-VII compound semiconductor light-emitting devices  
Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
8049203 Nanoelectronic structure and method of producing such  
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than...
8026508 Semiconductor device and method of fabricating the same  
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a single electron box including a first quantum dot, a charge storage gate on the first...
8013321 Composite comprising array of needle-like crystal, method for producing the same, photovoltaic conversion element, light emitting element, and capacitor  
A composite of a base and an array of needle-like crystals formed on the surface of the base is provided, in which the base side and the opposite side to the base with respect to the array can be...
8008647 Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps  
There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type...
7981710 Light emitting device and manufacturing method  
A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole...
7977666 Quantum dot infrared photodetector apparatus  
The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device includes a substrate,...
7968868 Optical semiconductor device and manufacturing method of the same  
A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side...
7964866 Low power floating body memory cell based on low bandgap material quantum well  
Embodiments of the invention relate to apparatus, system and method for use of a memory cell having improved power consumption characteristics, using a low-bandgap material quantum well structure...
7947972 Light emitting device  
Disclosed are a light emitting device. The light emitting device includes a first conductive semiconductor layer, a light emitting layer, a protective layer, a nano-layer and a second conductive...
7947976 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process  
Systems and methods are described for controlled alignment of catalytically grown nanostructures in a large-scale synthesis process. A method includes: generating an electric field proximate an...
7940606 Signal detecting device and signal detecting method  
A signal detecting device includes: a semiconductor substrate; a near-field light generating section that is provided on the semiconductor substrate and generates near-field light near an interface...
7924107 Resonant tunneling structure  
A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E2). A second quantum well...
7888700 Quantum dot light emitting device  
An inorganic light emitting device including a transparent substrate; a first electrode; a second electrode opposed to the first electrode; a polycrystalline inorganic light emitting layer...
7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures  
A semiconductor device may include a semiconductor substrate having a surface, a shallow trench isolation (STI) region in the semiconductor substrate and extending above the surface thereof, and a...
7795609 Densely stacked and strain-compensated quantum dot active regions  
Embodiments provide a quantum dot active structure and a methodology for its fabrication. The quantum dot active structure includes a substrate, a plurality of alternating regions of a quantum dot...
7786467 Three-dimensional nanoscale crossbars  
Various embodiments of the present invention include three-dimensional, at least partially nanoscale, electronic circuits and devices in which signals can be routed in three independent directions,...
7781771 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication  
A method of a bulk tri-gate transistor having stained enhanced mobility and its method of fabrication. The present invention is a nonplanar transistor having a strained enhanced mobility and its...
7755078 Silicon single electron device  
A silicon integrated circuit device comprising a near intrinsic silicon substrate in which there are one or more ohmic contact regions. An insulating layer lies above the substrate, and on top of...
7755080 Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same  
The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate 10, the step of removing...
7750337 Nitride semiconductor device  
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The...
7745813 Nanostructures and methods for manufacturing the same  
A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length...
7745816 Single-photon detector with a quantum dot and a nano-injector  
A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the...
7732806 Refractive index variable element  
A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied...
7723758 Method for dopant calibration of delta doped multilayered structure  
In a calibration method, the relation between dopant concentrations of δ-doping layers in a multilayered semiconductor structure and process parameters is determined S1 based on multiple bulk ...
7723719 Light emitting devices with inhomogeneous quantum well active regions  
A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation...
7700941 Surface-emitting semiconductor laser comprising a structured waveguide  
A surface-emitting semiconductor laser includes an active zone, the active zone having a p-n-junction and surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor...
7701072 Semiconductor device and manufacturing method therefor  
The semiconductor device according to an aspect of the invention includes: an internal circuit area having an internal circuit; an I/O circuit area positioned outside the internal circuit area; and...
7683361 Method for generating quantum-entangled photon pairs  
A method for generating a quantum-entangled photon pair is such that a biexciton in such a state that the angular momentum is 0 is generated through two-photon resonance induced by irradiating a...
7683392 Semiconductor device with anisotropy-relaxed quantum dots  
A semiconductor quantum dot device includes: an inclined InP substrate whose principal surface normal is inclined from a [001] direction to a [1 −10] direction in a (001) plane; and semiconductor q...
7663138 Nitride semiconductor light emitting element  
A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride...
7663139 Optical semiconductor device and manufacturing method of the same  
A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side...
7615800 Quantum dot light emitting layer  
An inorganic light emitting layer having a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each...
7605390 Programmable photolithographic mask based on semiconductor nano-particle optical modulators  
Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used...
7601980 Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures  
A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below...
7570409 Radiation modulation by reflection from controlled composite material  
Modulation of electromagnetic radiation is described in which an incident radiation beam is directed toward a surface of a composite material and at least partially reflects to form a reflected...
7564096 Scalable power field effect transistor with improved heavy body structure and method of manufacture  
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate...
7554109 Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture  
Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active...
RE40725 Magnetic body formed by quantum dot array using non-magnetic semiconductor  
A practically realizable semiconductor magnetic body having a flat-band structure is disclosed. The semiconductor magnetic body is formed by semiconductor quantum dots arranged on lattice points...
7541610 LED device with re-emitting semiconductor construction and converging optical element  
A light source is provided including an LED component having an emitting surface, which may include: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor...
7518162 Semiconductor light emitting device  
A semiconductor light emitting device has a gallium nitride compound semiconductor, and a first cladding layer of a first conductivity type, an active layer, an electron barrier layer of a second...
7514710 Bottom gate thin film transistors  
A transistor is provided comprising: a substrate; a gate electrode; a semiconducting material not located between the substrate and the gate electrode; a source electrode in contact with the...
7485892 Optical broadband emitters and methods of making the same  
An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum...
Matches 1 - 50 out of 354 1 2 3 4 5 6 7 8 >