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7602025 High voltage semiconductor device and method of manufacture thereof  
A drift diffusion layer of a low concentration is formed so as to surround a collector buffer layer having a relatively high concentration including a high-concentration collector diffusion layer...
7525155 High voltage transistor structure for semiconductor device  
A high voltage MOS transistor has a thermally-driven-in first doped region and a second doped region that form a double diffused drain structure. Boundaries of the first doped region are graded. A...
7414273 Two-dimensional silicon controlled rectifier  
A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area)...
7388255 Semiconductor device having separation region  
A semiconductor device includes: a semiconductor substrate; a separation region in the substrate; an embedded layer; a channel forming region; a source region; a drain region; a first electrode for...
7365372 Semiconductor device and method for manufacturing semiconductor device  
The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type...
7332756 Damascene gate structure with a resistive device  
A semiconductor structure having a damascene gate structure and a resistive device on a semiconductor substrate is disclosed. The structure includes a first dielectric layer having a first opening...
7304327 Thyristor circuit and approach for temperature stability  
Switching operations, such as those used in memory devices, are enhanced using a semiconductor device having a thyristor adapted to switch between conducting and blocking states and operate at low...
7268373 Thyristor-based memory and its method of operation  
A semiconductor may contain a plurality of circuits each comprising at least one thyristor having a base region. The base region of at least one of the thyristors has a different doping profile...
7262443 Silicide uniformity for lateral bipolar transistors  
Method and apparatus for forming a semiconductor device. The method includes defining a plurality of rows in a semiconductor layer. Thereafter, on one or more of the plurality of rows, one or more...
7196361 Cascoded bi-directional high voltage ESD protection structure  
In a high voltage ESD protection solution, a plurality of DIACs are connected together to define a cascaded structure with isolation regions provided to prevent n-well and p-well punch through. An...
7161192 Silicon controlled rectifier  
A silicon controlled rectifier is provided, including: a first conducting-type substrate; two second conducting-type deep wells separately disposed inside the first conducting-type substrate; a...
7126168 Silicon controlled rectifier structures with reduced turn on times  
The turn on time of an electrostatic discharge (ESD) structure, such as a silicon controlled rectifier (SCR), a low-voltage triggering SCR (LVTSCR), and a bipolar SCR (BSCR), is reduced by turning...
7109551 Semiconductor device  
A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and...
7109533 Electrostatic discharge protection device  
There is provided an electrostatic discharge protection device comprising a P conductive type first P well region 101 formed in a P type epitaxial layer 31 being deposited on a surface of a P+...
7078739 Thyristor-based memory and its method of operation  
A thyristor-based memory may comprise a thyristor accessible via an access transistor. A temperature dependent bias may be applied to at least one of a supporting substrate and an electrode...
6998651 LVTSCR-like structure with blocking junction under the polygate  
In a LVTSCR-like structure, an additional p+ region is formed adjacent a n+ floating drain to define a p-n junction with the floating drain underneath a polygate of the structure. The polygate is...
6960792 Bi-directional silicon controlled rectifier structure with high holding voltage for latchup prevention  
A bi-directional silicon controlled rectifier structure provides electrostatic discharge (ESD) protection against both positive and negative voltage spikes. The structure utilizes a pair of wells,...
6911680 Self-aligned thin capacitively-coupled thyristor structure  
A semiconductor memory device having a thyristor is manufactured in a manner that makes possible self-alignment of one or more portions of the thyristor. According to an example embodiment of the...
6897103 MOS integrated circuit with reduced on resistance  
An integrated circuit having a high voltage lateral MOS with reduced ON resistance. In one embodiment, the integrated circuit includes a high voltage lateral MOS with an island formed in a...
6891206 Lateral thyristor structure for protection against electrostatic discharge  
To protect against electrostatic discharges in monolithic integrated circuits in CMOS technology, a lateral thyristor structure is presented which has a much lower firing voltage compared to...
6870202 Surge protection semiconductor device  
A pnpn thyristor element Thy 1 and six pn diode elements D 1, D 2, D 3, D 4, D 5, and D 6 are formed in a semiconductor substrate of a first conductivity type, and separated into six regions...
6858884 Lateral semiconductor device  
A lateral semiconductor device ( 10 ) has a semiconductor layer ( 15 ) on an insulating substrate ( 16 ). The semiconductor layer ( 15 ) has a first region ( 12 ) of a first conduction type and a...
6777748 Bi-directional semiconductor component  
A bidirectional semiconductor component having two symmetrical MOS transistor structures integrated laterally in a substrate and connected antiserially, their drain terminals being connected to one...
6750477 Static induction transistor  
In a static induction transistor, in addition to a first gate layer ( 4 ), a plurality of second gate layers ( 41 ) having a shallower depth and a narrower gap therebetween than those of the first...
6720624 LVTSCR-like structure with internal emitter injection control  
In an ESD protection device using a LVTSCR-like structure, the holding voltage is increased by placing the p+ emitter outside the drain of the device, thereby retarding the injection of holes from...
6713791 T-RAM array having a planar cell structure and method for fabricating the same  
A T-RAM array having a planar cell structure is presented. The T-RAM array includes n-MOS and p-MOS support devices which are fabricated by sharing process implant steps with T-RAM cells of the...
6621126 Multifinger silicon controlled rectifier structure for electrostatic discharge protection  
An electrostatic discharge (ESD) protection circuit including a silicon controlled rectifier having a plurality of SCR fingers. Each SCR finger includes at least one interspersed high-doped first...
6617661 High voltage component and method for making same  
A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series...
6541801 Triac with a holding voltage that is greater than the dc bias voltages that are on the to-be-protected nodes  
The holding voltage (the minimum voltage required for operation) of a triac is increased to a value that is greater than a dc bias on to-be-protected nodes. The holding voltage is increased by...
6521952 Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection  
An NMOS-trigger silicon controlled rectifier in silicon-on-insulator (SOI-NSCR) SOI-NSCR includes a P-type well and an N-type well. A first P + doping region and a first N + doping region are in...
6507071 Lateral high-voltage sidewall transistor  
A lateral high-voltage sidewall transistor configuration includes a low-doped semiconductor substrate of a first conductivity type and a low-doped epitaxial layer of a second conductivity type...
6479841 Power component state detector  
A detector of the state (on or off) of a vertical power component formed in a lightly-doped semiconductor substrate of a first conductivity type having a front surface and a rear surface. The...
6465864 Diode structure on MOS wafer  
Three diode structures on a metal-oxide-semiconductor (MOS) wafer. Each diode structure is capable of reducing parasitic current through the wafer and hence increasing the power conversion...
6423987 Self-protect thyristor  
With a self-protect thyristor, having a MOSFET (M 1 ) that is connected in series with the thyristor and a second, self-controlled MOSFET (M 2 ) between the p-base of the thyristor and the external...
6410965 Annular SCR device  
A SCR device having at least one annular unit provided on a first type semiconductor substrate. The annular unit comprises a second type well, a first type doping region, a second type contact...
6313485 Gate-controlled thyristor  
A gate-controlled thyristor in which an IGBT in a first cell and a thyristor in a main cell are connected together in ouch a way that the first cell and the main cell form a lateral FET with a...
6258634 Method for manufacturing a dual-direction over-voltage and over-current IC protection device and its cell structure  
A two terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions provides protection against both positive and negative ESD pulses. When an...
6246079 SCR circuit with a high trigger current  
An SCR with a high trigger current is provided in a P-type semiconductor substrate with an N-well formed therein. In the P-type semiconductor substrate, there is provided a P-type region and an...
6242763 Low triggering voltage SOI silicon-control-rectifier (SCR) structure  
A low triggering voltage PD-SOI (Partially-Depleted Silicon-on-Insulator) electrostatic discharge (ESD) protection structure is disclosed. In one embodiment, the protection structure includes: A...
6172404 Tuneable holding voltage SCR ESD protection  
An SCR provides for increased holding voltage by decoupling the pnp and npn parasitic bipolar transistors of the SCR. In one embodiment, a N+ region is placed between the n+ region and the p+...
6137140 Integrated SCR-LDMOS power device  
An integrated SCR-LDMOS device (10) having a p+ region (13) in the drain region (12), but otherwise similar to a conventional LDMOS transistor. The device (10) may be implemented as a modification...
6075272 Structure for gated lateral bipolar transistors  
An improved structure and method for gated lateral bipolar transistors is provided. The present invention capitalizes on opposing sidewall structures and adjacent conductive sidewall members to...
6049109 Silicon on Insulator semiconductor device with increased withstand voltage  
A power semiconductor device according to the present invention has an SOI substrate formed of a buried silicon oxide film having an uneven surface portion on the surface thereof and an n-type...
6043516 Semiconductor component with scattering centers within a lateral resistor region  
A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor...
6023078 Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability  
Silicon carbide power devices include a semiconductor substrate of first conductivity type (e.g., N-type) having a face thereon and a blocking voltage supporting region of first conductivity type...
6020623 Integrated structure with device having a preset reverse conduction threshold  
An integrated structure is made in a chip of semiconductor material inside an insulated N type region extending from a surface of the chip. The structure comprises a Zener diode formed by a P type...
5986290 Silicon controlled rectifier with reduced substrate current  
The invention provides a silicon controlled rectifier having an anode and a cathode and including an NPN transistor and a PNP transistor. The NPN transistor has an emitter coupled to the cathode, a...
5982016 Monolithic component associating a high-voltage component and logic components  
A monolithic component including, in an N-type lightly-doped substrate of a semiconductor wafer, two portions separated by a P-type insulating wall. A first portion of the two portions includes a...
5925900 Emitter-switched thyristor having a floating ohmic contact  
The operating characteristics of emitter-switched thyristors (1) are improved by the addition of a floating ohmic contact (14) over adjacent regions of n+ and p+ type (15,16). In a lateral device,...
5796146 Semiconductor device having a lateral insulated gate biopolar transistor  
An LIGBT includes an LDMOST structure in which the drain/anode 9, 13 is provided with a pn junction which injects charge carriers into the drift region 8. To prevent latch-up, the base region 6 of...
Matches 1 - 50 out of 164 1 2 3 4 >