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7633083 Metamorphic buffer on small lattice constant substrates  
A semiconductor device is supported by a substrate with a smaller lattice constant. A metamorphic buffer provides a transition from the smaller lattice constant of the substrate to the larger...
7615847 Method for producing a semiconductor component  
A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which...
7612363 N-type group III nitride semiconductor stacked layer structure  
An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer...
7598158 Method and device for growing pseudomorphic AlInAsSb on InAs  
A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of...
7586165 Microelectromechanical systems (MEMS) device including a superlattice  
A microelectromechanical system (MEMS) device may include a substrate and at least one movable member supported by the substrate. The at least one movable member may include a superlattice...
7564096 Scalable power field effect transistor with improved heavy body structure and method of manufacture  
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate...
7547909 III-nitride compound semiconductor light emitting device  
The present invention relates to a IΠ-nitride compound semiconductor light emitting device comprising an active layer with the multi-quantum wells interposed between an n-In x Al y Ga z N(x+y+z=1,...
RE40725 Magnetic body formed by quantum dot array using non-magnetic semiconductor  
A practically realizable semiconductor magnetic body having a flat-band structure is disclosed. The semiconductor magnetic body is formed by semiconductor quantum dots arranged on lattice points...
7541610 LED device with re-emitting semiconductor construction and converging optical element  
A light source is provided including an LED component having an emitting surface, which may include: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor...
7531827 Gallium nitride-based light emitting diode and fabrication method thereof  
A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is...
7518139 Gallium nitride-based device and method  
A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at...
7479651 Semiconductor device  
A semiconductor device comprises an active layer formed on a substrate, a superlattice layer formed on the active layer, and an ohmic electrode formed on the superlattice layer. In the superlattice...
7462859 Quantum well design for a coherent, single-photon detector with spin resonant transistor  
A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has a first electrode forming an isolation...
7459719 Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer  
An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers....
7456442 Super lattice modification of overlying transistor  
The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction...
7456422 Semiconductor device  
A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a...
7446334 Electronic device comprising active optical devices with an energy band engineered superlattice  
An electronic device may include first and second integrated circuits including respective first and second active optical devices establishing an optical communications link therebetween. The...
7432524 Integrated circuit comprising an active optical device having an energy band engineered superlattice  
An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include...
7432550 Semiconductor structure including mixed rare earth oxide formed on silicon  
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
7411187 Ion trap in a semiconductor chip  
A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating...
7405422 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD  
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is...
7375368 Superlattice for fabricating nanowires  
This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges...
7372066 Gallium nitride compound semiconductor device and manufacturing method  
A light-emitting element using GaN. On a substrate ( 10 ), formed are an SiN buffer layer ( 12 ), a GaN buffer layer ( 14 ), an undoped GaN layer ( 16 ), an Si-doped n-GaN layer ( 18 ), an SLS...
7358523 Method and structure for deep well structures for long wavelength active regions  
Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs,...
7352018 Non-volatile memory cells and methods for fabricating non-volatile memory cells  
The invention relates to a method for fabricating stacked non-volatile memory cells. Further, the invention relates to stacked non-volatile memory cells. The invention particularly relates to the...
7323725 Semiconductor device  
The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type...
7279699 Integrated circuit comprising a waveguide having an energy band engineered superlattice  
An integrated circuit may include at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers....
7265375 Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein  
Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer....
7262429 Thz detection employing modulation doped quantum well device structures  
An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor...
7233018 High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same  
Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on...
7227175 Semiconductor device with different lattice properties  
To reduce a current loss through a channel and improve electron mobility, a first semiconductor layer and a second semiconductor layer (sequentially formed on a semiconductor substrate) have...
7227174 Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction  
A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon...
7211822 Nitride semiconductor device  
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more...
7202494 FINFET including a superlattice  
A semiconductor device may include at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin. The...
7176479 Nitride compound semiconductor element  
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline...
7173293 Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation  
A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum...
7166485 Superlattice nanocrystal Si-SiO2 electroluminescence device  
A superlattice nanocrystal Si—SiO 2 electroluminescence (EL) device and fabrication method have been provided. The method comprises: providing a Si substrate; forming an initial SiO 2 layer...
7161168 Superlattice nanopatterning of wires and complex patterns  
Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the...
7148519 Structure of GaN light-emitting diode  
A GaN LED structure with a short period superlattice contacting layer is provided. The LED structure comprises, from the bottom to top, a substrate, a double buffer layer, an n-type GaN layer, a...
7122813 Device for generating THz radiation  
A device for generating terahertz radiation. The device comprising a dipole generating layer, a coupling block and an extraction block. The coupling block is transparent to laser light and is in...
7119358 Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure  
The invention relates to a semiconductor structure for use in the near infrared region, preferably in the range from 1.3 to 1.6 μm, said structure comprising an active zone consisting of a...
7115896 Semiconductor structures for gallium nitride-based devices  
A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a...
7112830 Super lattice modification of overlying transistor  
The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction...
7098471 Semiconductor quantum well devices and methods of making the same  
Semiconductor quantum well devices and methods of making the same are described. In one aspect, a device includes a quantum well structure that includes semiconductor layers defining interleaved...
7087924 Gallium-nitride based light emitting diode structure with enhanced light illuminance  
Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact...
7067838 Gallium-nitride-based light-emitting apparatus  
A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer ( 124 ); an active layer ( 129 ) including an n-type first barrier layer...
7061014 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film  
Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a...
7053418 Nitride based semiconductor device  
The present invention provides a nitride semiconductor device comprising an active layer of a quantum well structure, a first conductive clad layer and a second conductive clad layer. The first...
7049641 Use of deep-level transitions in semiconductor devices  
The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or...
7045813 Semiconductor device including a superlattice with regions defining a semiconductor junction  
A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon...
Matches 1 - 50 out of 290 1 2 3 4 5 6 >