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7485921 Trench gate type MOS transistor semiconductor device  
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer,...
7354781 Method of manufacturing field emission device  
A method of manufacturing a field emission device (FED) using a photoresist for performing multi-patterning processes, whereby different structures can be multi-patterned using a single photoresist...
7332749 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor  
A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator...
7276778 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent  
A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well...
7259440 Fast switching diode with low leakage current  
A fast switching diode includes an nāˆ’ layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A...
7250628 Memory devices and electronic systems comprising thyristors  
The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and...
7056753 Field emission display with double gate structure and method of manufacturing therefor  
A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate,...
7045830 High-voltage diodes formed in advanced power integrated circuit devices  
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for...
6885079 Methods and configuration to simplify connections between polysilicon layer and diffusion area  
An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting...
6727526 Thyristor with recovery time voltage surge resistance  
A preferably asymetrical thyristor ( 1 ) with at least one driver stage ( 20 ) for amplifying a control current (I) fed into the cathodal base ( 16 ) of the thyristor, in which, in the driver...
6670650 Power semiconductor rectifier with ring-shaped trenches  
A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n...
6509578 Method and structure for limiting emission current in field emission devices  
A field emission display has electron emitters that are current-limited by implanting in a silicon layer only enough ions to produce a desired current, and then forming emitters from the silicon...
6495864 High-voltage semiconductor component, method for the production and use thereof  
The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body...
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices  
A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall...
6429501 Semiconductor device having high breakdown voltage and method for manufacturing the device  
A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P āˆ’ -type RESURF layer of a...
6403988 Semiconductor device with reverse conducting faculty  
A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n āˆ’ silicon substrate 101 , p + gate regions 102, 104 ...
6392250 Organic light emitting devices having improved performance  
An organic light emitting device includes a mixed region composed of a mixture of a hole transport material, an electron transport material and at least one dopant material. The hole transport...
6281546 Insulated gate field effect transistor and manufacturing method of the same  
A wide high concentration P + type region is formed on the surface of an N - type epitaxial layer formed on a P type substrate in the vicinity of the edge portion of a cell region in which a...
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior  
Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within...
6218217 Semiconductor device having high breakdown voltage and method of manufacturing the same  
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n - silicon substrate located between gate trenches which are arranged with a predetermined...
6198115 IGBT with reduced forward voltage drop and reduced switching loss  
The boundary between the P type silicon base and N + buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined and located damage sites for reducing...
6180965 Semiconductor device having a static induction in a recessed portion  
In a static induction semiconductor device, particular a high power static induction semiconductor device, recessed portions 12 are formed in one surface of a silicon substrate 11 of one...
6169299 Semiconductor device  
The MOS gate thyristor of the present invention has a p + type anode layer (first semiconductor layer), an n - type base region (second semiconductor layer) with the function of acting as a drift...
6147369 SCR and current divider structure of electrostatic discharge protective circuit  
An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current...
6111278 Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up  
Power semiconductor devices having discontinuous emitter regions therein include a semiconductor substrate containing therein a collector region of second conductivity type, a buffer region of...
RE36818 Insulated gate semiconductor device with stripe widths  
There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n - semiconductor layer (3) by double diffusion in corresponding...
6078065 Bilaterally controllable thyristor  
A specification is given of a bidirectionally controllable thyristor which is distinguished by improved decoupling between the two thyristor structures. In particular, the intention is that the...
5909039 Insulated gate bipolar transistor having a trench  
An IGBT comprises a drain, a highly doped p-type substrate layer, a highly doped n-type buffer layer, a drift layer, a p-type base layer, a highly doped n-type source region layer and a source...
5856683 MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element  
A MOS-gate switched power semiconductor component with a semiconductor body that has a number of unit cells arranged side-by-side and switched in parallel and consisting of a p-emitter zone...
5780877 Break-over photodiode  
A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage...
5763902 Insulated gate bipolar transistor having a trench and a method for production thereof  
An insulated gate bipolar transistor comprises a drain which supports a highly doped p-type substrate layer; a low doped n-type drift layer supported over the substrate layer; a base layer...
5679966 Depleted base transistor with high forward voltage blocking capability  
A depleted base transistor with high forward voltage blocking capability includes cathode and anode regions on opposite faces of a semiconductor substrate, a base region therebetween, a rectifying...
5648665 Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor  
A P + layer is formed on the lower surface of an N - substrate, and recesses are defined in the upper surface of the N - substrate. Then, P + gate regions and bottom gate regions are formed...
5644149 Anode-side short structure for asymmetric thyristors  
A thyristor according to the invention comprises a layer sequence containing an n-type emitter layer (4), a p-type base layer (5), an n-type base layer (6) and a p-type emitter layer (7) in a...
5637887 Silicon controller rectifier (SCR) with capacitive trigger  
A thyristor device includes first and second terminals, a PNPN thyristor structure including first P-region, a first N-region, a second P-region and a second N-region disposed in series between the...
5635734 Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same  
An insulated gate type semiconductor device has a gate electrode which controls current flow between two regions of the same conductivity type in a semiconductor substrate. A main electrode has a...
5619047 Semiconductor diode in which electrons are injected into a reverse current  
A diode (1) is specified which has electron injection means on the anode-side principal surface (3). After the reverse-current peak has been traversed, said means inject electrons into the anode...
5528058 IGBT device with platinum lifetime control and reduced gaw  
For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The...
5463231 Method of operating thyristor with insulated gates  
A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type...
5455442 COMFET switch and method  
The performance of COMFET-based electrical switches may be improved by connecting a MOSFET substantially in parallel with the COMFET. In a monolithic embodiment, a MOSFET drain region may be added...
5444271 Conductivity-modulated semiconductor device with high breakdown voltage  
Base regions of a second conductivity type are formed and spaced apart from one another in a first major surface of a semiconductor substrate of a first conductivity type which functions as a drain...
5428229 Pressure contact type MOS semiconductor device and fabrication method of the same  
A MOS semiconductor device which exhibits high switching operations including high turn-on and an excellent self-cooling capability. The device prevents damage to insulation films and electrodes...
5426314 Insulated gate control static induction thyristor  
A static induction thyristor has a first semiconductor area having a high impurity concentration of a first conductivity type. A second semiconductor area having low impurity concentration is...
5345095 Self arc-extinguishing thyristor and method of manufacturing the same  
A self arc-extinguishing thyristor having a large main current is disclosed. An n-type base layer is formed on a p-type anode layer. The n-type base layer includes in its top center portion a...
5343052 Lateral insulated gate bipolar transistor  
A lateral insulated-gate bipolar transistor has a drift region having therein a base layer and a collector layer. An emitter layer is formed in the base layer. A gate electrode structure,...
5306930 Emitter switched thyristor with buried dielectric layer  
An emitter switched thyristor with buried dielectric layer includes a contiguous P-N-P-N series of semiconductor regions between an anode contact and cathode contact. These regions correspond to an...
5296725 Integrated multicelled semiconductor switching device for high current applications  
An integrated multicelled thyristor includes a plurality of main thyristor cells and a plurality of edge thyristor cells. The main thyristor cells comprise source cells located in the center or...
5202573 Dual anode MOS SCR with anti crosstalk collecting region  
A semiconductor layer made of an epitaxial growing layer (16) is formed on the surface of a p - -type silicon semiconductor substrate (11), first impurity regions are formed by p + -type buried...
5198688 Semiconductor device provided with a conductivity modulation MISFET  
A semiconductive device of the type including a conductivity-modulated field-effect transistor provides all of the three electrodes on the principal surface by use of a buried layer and a variety...
5182626 Insulated gate bipolar transistor and method of manufacturing the same  
In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed...
Matches 1 - 50 out of 76 1 2 >