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7619238 |
Heterostructure including light generating structure contained in potential well
A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons,...
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7615773 |
Semiconductor light-emitting device and manufacturing method thereof
A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer;...
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7615772 |
Nitride semiconductor LED and fabrication method thereof
A nitride semiconductor LED includes a substrate; a GaN-based buffer layer formed on the substrate; Al y Ga 1−y N/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer...
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7612363 |
N-type group III nitride semiconductor stacked layer structure
An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer...
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7601980 |
Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below...
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7601979 |
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device...
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7598514 |
Quasi-particle interferometry for logical gates
A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for...
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7598513 |
SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD 4 with SiH 3 GeH 3 . Using the method, single-phase Si...
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7595508 |
Optical semiconductor device and method for fabricating the same
The optical semiconductor device comprises an active layer including a plurality of quantum dot stacks 18, 22, 26 each of which is formed of a plurality of quantum dot layers 14 and a plurality...
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7582891 |
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn 1-x Ge x buffer layer and their uses are provided.
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7573059 |
Dislocation-free InSb quantum well structure on Si using novel buffer architecture
A device grade III-V quantum well structure formed on a silicon substrate using a composite buffer architecture and the method of manufacture is described. Embodiments of the present invention...
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7569941 |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline...
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7564096 |
Scalable power field effect transistor with improved heavy body structure and method of manufacture
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate...
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7560736 |
Mid-infrared resonant cavity light emitting diodes
A Resonant Cavity Light Emitting Diode (RCLED) device having a first active region having one or more quantum wells disposed within, a first chamber and a second chamber coupled to the first active...
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7560394 |
Nanodots formed on silicon oxide and method of manufacturing the same
A nanodot material including nanodots formed on silicon oxide, and a method of manufacturing the same, is provided. The nanodot material includes a substrate, a silicon oxide layer, and a plurality...
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7550758 |
Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
A method and resulting high electron mobility transistor comprised of a substrate and a relaxed silicon-germanium layer formed over the substrate. A dopant layer is formed within the relaxed...
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7547910 |
Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device ( 11 ),...
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7547909 |
III-nitride compound semiconductor light emitting device
The present invention relates to a IΠ-nitride compound semiconductor light emitting device comprising an active layer with the multi-quantum wells interposed between an n-In x Al y Ga z N(x+y+z=1,...
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RE40725 |
Magnetic body formed by quantum dot array using non-magnetic semiconductor
A practically realizable semiconductor magnetic body having a flat-band structure is disclosed. The semiconductor magnetic body is formed by semiconductor quantum dots arranged on lattice points...
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7541610 |
LED device with re-emitting semiconductor construction and converging optical element
A light source is provided including an LED component having an emitting surface, which may include: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor...
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7535034 |
PNP light emitting transistor and method
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with...
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7535015 |
Semiconductor device method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
Consistent with example embodiments a semiconductor device and a method are disclosed for obtaining on a substrate a multilayer structure with a quantum well structure. The quantum well structure...
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7531827 |
Gallium nitride-based light emitting diode and fabrication method thereof
A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is...
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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7522647 |
Semiconductor laser and method of fabricating the same
An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion...
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7518204 |
Semiconductor device
A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride...
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7518139 |
Gallium nitride-based device and method
A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at...
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7515776 |
Temperature-controlled optical modulator
SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this...
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7514708 |
80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio
A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in...
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7495383 |
Phosphor based on a combination of quantum dot and conventional phosphors
A phosphor composition and a light source constructed therefrom are disclosed. The phosphor composition includes first and second phosphors. The first phosphor includes first phosphor particles...
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7485908 |
Insulated gate silicon nanowire transistor and method of manufacture
An insulated gate silicon nanowire transistor amplifier structure is provided and includes a substrate formed of dielectric material. A patterned silicon material may be disposed on the substrate...
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7485892 |
Optical broadband emitters and methods of making the same
An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum...
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7479652 |
Qubit readout via controlled coherent tunnelling to probe state
This invention concerns quantum computers in which the qubits are closed systems, in that the particle or particles are confined within the structure. A “site” can be produced by any method of...
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7479448 |
Method of manufacturing a light emitting device with a doped active layer
Oxygen is doped in a quantum well active layer. First, an n-type In 0.02 Ga 0.98 N barrier layer 550 of 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, O 2 at 20 sccm, and NH 3 at...
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7473922 |
Infrared detector
At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers...
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7468524 |
Field-effect transistor
A nitride-based group III-V compound semiconductor device includes a buffer layer, a first nitride semiconductor layer and a second nitride semiconductor layer successively stacked on a substrate,...
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7459719 |
Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer
An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers....
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7456423 |
Quantum dot optoelectronic device having an Sb-containing overgrown layer
A quantum dot optoelectronic device has an overgrown layer containing antimony (Sb). The optical characteristics and thermal stability of the optoelectronic device are thus greatly enhanced due to...
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7456422 |
Semiconductor device
A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a...
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7451292 |
Methods for transmitting data across quantum interfaces and quantum gates using same
Quantum gaps exist between an origin and a destination that heretofore have prevented reliably utilizing the advantages of quantum computing. To predict the outcome of instructions with precision,...
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7442575 |
Method of manufacturing semiconductor nanowires
A method is shown for manufacturing silicon semiconductor nanowires on graphite cloth conducting substrates. The nanowires are grown on the substrate by first depositing a thin gold film on the...
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7435987 |
Forming a type I heterostructure in a group IV semiconductor
In one embodiment, the present invention includes a method for forming a transistor that includes forming a first buffer layer of silicon germanium tin (SiGe(Sn)) on a silicon (Si) substrate,...
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7432522 |
Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting...
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7429747 |
Sb-based CMOS devices
A group III-V material CMOS device may have NMOS and PMOS portions that are substantially the same through several of their layers. This may make the CMOS device easy to make and prevent...
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7425732 |
Nitride semiconductor device
A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride...
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7425296 |
Method and system for wavelength specific thermal irradiation and treatment
A system for direct injection of selected thermal-infrared (IR) wavelength radiation or energy into articles for a wide range of processing purposes is provided. These purposes may include heating,...
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7417227 |
Scanning interference electron microscope
The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an...
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7411187 |
Ion trap in a semiconductor chip
A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating...
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7405421 |
Optical integrated device
The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the...
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7399988 |
Photodetecting device and method of manufacturing the same
A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots...
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