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8183556 Extreme high mobility CMOS logic  
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
8178891 Semiconductor light emitting device and method for manufacturing the same  
Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride...
8178431 Process for producing a PN homojunction in a nanostructure  
The invention relates to a process for producing a p-n junction in a nanostructure, in which the nanostructure has one or more nanoconstituents made of a semiconductor material with a single type...
8179585 Coupled quantum well structure  
In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled...
8178889 Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region  
A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a...
8173982 Non-degenerate polarization-entangled photon pair generation device and non-degenerate polarization-entangled photon pair generation method  
A non-degenerate polarization-entangled photon pair generation device (1) that efficiently and easily generates non-degenerate polarization-entangled photon pairs includes: a quantum-entangled...
8173469 Fabrication method of light emitting device  
Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a...
8168964 Semiconductor device using graphene and method of manufacturing the same  
A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used...
8164083 Quantum dot optoelectronic devices with enhanced performance  
An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot...
8154008 Light emitting diode with improved structure  
A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based...
8154010 Memory device and method of fabricating the same  
A memory device includes a first electrode, a second electrode spaced apart from the first electrode and a nanotube or nanowire network disposed between the first electrode and the second...
8148715 Solid state charge qubit device  
This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up....
8148716 Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device  
A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the...
8148713 Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes  
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of...
8143144 Semiconductor nanowire and its manufacturing method  
A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the...
8143686 Laser-induced structuring of substrate surfaces  
In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface)...
8138494 GaN series light-emitting diode structure  
The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking...
8134170 Nitride semiconductor light emitting device and method of manufacturing the same  
A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride...
8129710 Plasmon enhanced nanowire light emitting diode  
A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding...
8124990 Semiconductor light emitting device having an electron barrier layer between a plurality of active layers  
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type...
8124960 Nitride semiconductor light emitting diode  
A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where...
8124989 Light optoelectronic device and forming method thereof  
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes...
8124959 High hole mobility semiconductor device  
One embodiment of the invention includes a high hole mobility p-channel GaAsySb1-y quantum well with a silicon substrate and an InxAl1-xAs barrier layer.
8124432 Nitride semiconductor optical element and manufacturing method thereof  
In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In...
8120012 Group III nitride white light emitting diode  
A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the...
8120013 Nitride semi-conductor light emitting device and a process of producing a nitride semi-conductor light emitting device  
A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the...
8115213 Semiconductor light sources, systems, and methods  
A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper...
8115189 Silica nanowire comprising silicon nanodots and method of preparing the same  
Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption...
8115193 Vertical resonator type light emitting diode  
A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission...
8110823 III-V photonic integration on silicon  
Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other...
8106378 Semiconductor quantum dot device  
A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the...
8106379 Hybrid silicon evanescent photodetectors  
Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on...
8093579 Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip  
A semiconductor chip (1) comprises a p-doped region (I) having a cladding layer (18) and a contact layer (21) between which a first interlayer (19) and a second interlayer (20) are arranged. A...
8093581 Optical semiconductor device and method for manufacturing the same  
There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide...
8084764 Semiconductor light emitting device and nitride semiconductor light emitting device  
The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer...
8084763 Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys  
A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and ...
8080820 Apparatus and methods for improving parallel conduction in a quantum well device  
Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
8076667 Efficient light extraction method and device  
A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device,...
8076684 Group III intride semiconductor light emitting element  
A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting...
8067787 Semiconductor electronic device  
A semiconductor electronic device comprises a substrate; a buffer layer formed on the substrate, the buffer layer including not less than two layers of composite layer in which a first...
8067257 Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device  
In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference ...
8062913 Semiconductor structure and method of manufacturing a semiconductor structure  
A semiconductor structure is formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate. The structure comprises...
8058640 Branched nanoscale wires  
The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires. In some cases, the branched nanoscale wires may be produced using vapor-phase and/or...
8058641 Copper blend I-VII compound semiconductor light-emitting devices  
Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
8058155 Integrated nanowires/microelectrode array for biosensing  
The present invention provides a method for the controlled synthesis of nanostructures on the edges of electrodes and an apparatus capable of optical and electrochemical sensing. In accordance with...
8053758 Semiconductor device  
A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed...
8053757 Gallium nitride light-emitting device with ultra-high reverse breakdown voltage  
One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an...
8053755 Semiconductor heterostructure  
A strained semiconductor heterostructure (10) comprises an injection region comprising a first emitter layer (11) having p-type conductivity and a second emitter layer (12) having n-type...
8049204 Semiconductor memory device having variable resistance element and method for manufacturing the same  
A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a...
8049231 Quantum photonic imagers and methods of fabrication thereof  
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can...
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