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8178947 Semiconductor device  
There is provided a semiconductor device in which an amount of fluctuations in output capacitance and feedback capacitance is reduced. In a trench-type insulated gate semiconductor device, a width...
8164111 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
High voltage semiconductor device including a free wheel diode  
A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an n+ type emitter region in the p type base region, an n+ type cathode region...
8120104 Semiconductor device and method of manufacturing semiconductor device  
A sinker layer is in contact with a first conductivity-type well, and is separated from a first conductivity-type collector layer and a second conductivity-type drift layer. A second...
8120074 Bipolar semiconductor device and manufacturing method  
A bipolar semiconductor device with a hole current redistributing structure and an n-channel IGBT are provided. The n-channel IGBT has a p-doped body region with a first hole mobility and a sub...
8120107 Semiconductor device internally having insulated gate bipolar transistor  
The semiconductor device includes a P-type semiconductor region and an MOS transistor. MOS transistor includes a gate electrode, a collector electrode, a drain electrode, an N-type impurity region...
8120058 High-drive current MOSFET  
A method of forming a semiconductor device having an asymmetrical source and drain. In one embodiment, the method includes forming a gate structure on a first portion of the substrate having a well...
8097901 Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor  
A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an...
8093621 VTS insulated gate bipolar transistor  
In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift...
8089094 Semiconductor device  
A power semiconductor device is provided, that realizes high-speed turnoff and soft switching at the same time, includes n-type main semiconductor layer including lightly doped n-type semiconductor...
8072000 Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area  
A structure of power semiconductor device having dummy cells around edge of active area is disclosed. The UIS test result of said improved structure shows that failed site after UIS test randomly...
8058670 Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up  
A trench insulation gate bipolar transistor (IGBT) power device with a monolithic deep body clamp diode comprising a plurality of trench gates surrounded by emitter regions of a first conductivity...
8017974 Semiconductor device with increased withstand voltage  
A semiconductor device having the present high withstand voltage power device IGBT has at a back surface a p collector layer with boron injected in an amount of approximately 3×1013/cm2 with an ...
7999310 ACCUFET with Schottky source contact  
An accumulation mode FET (ACCUFET) having a source contact that makes Schottky contact with the base region thereof.
7999285 Insulated gate bipolar transistor and method for manufacturing the same  
An insulated gate bipolar transistor according to an embodiment includes a first conductive type collector ion implantation area in a substrate; a second conductive type buffer layer, including a...
7977704 Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor  
A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an...
7968940 Insulated gate bipolar transistor device comprising a depletion-mode MOSFET  
Double gate IGBT having both gates referred to a cathode in which a second gate is for controlling flow of hole current. In on-state, hole current can be largely suppressed. While during switching,...
7952166 Semiconductor device with switch electrode and gate electrode and method for switching a semiconductor device  
A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift...
7944035 Double sided semiconduction device with edge contact and package therefor  
A semiconductor die has devices such as MOSgated devices, diodes and the like formed into the top and bottom surfaces of the die. One terminal of each of the devices terminal in the interior center...
7944017 Semiconductor device and manufacturing method of the same  
An n type impurity region is continuously formed on the bottom portion of a channel region below a source region, a gate region and a drain region. The n type impurity region has an impurity...
7939850 Semiconductor device and method for producing a semiconductor device  
A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is...
7932538 Insulated gate bipolar transistor and method of fabricating the same  
According to embodiments, an insulated gate bipolar transistor (IGBT) may include a first conductive type collector ion implantation area, formed within a substrate, second conductive type first...
7910983 MOS transistor having an increased gate-drain capacitance  
A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source...
7906811 Semiconductor device with protection element disposed around a formation region of a transistor  
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation...
7902601 Semiconductor device having deep trench charge compensation regions and method  
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the...
7897996 Semiconductor device and method for manufacturing the same  
A semiconductor device includes: an insulating film provided on a back surface of a semiconductor substrate; a plurality of isolation regions provided to reach the insulating film from a main...
7897997 Trench IGBT with trench gates underneath contact areas of protection diodes  
A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode...
7872282 Semiconductor device and method of manufacturing same  
A semiconductor device includes deep first field limiting rings, shallow second field limiting rings, insulation films covering each surface portion of each of the first and the second field...
7842968 Integrated low leakage diode  
An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the...
RE41866 Semiconductor device and method of fabricating same  
There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (Vth) with time wherein a surface protective film is not formed in a device area including...
7816741 Semiconductor device  
The semiconductor device of the present invention has a body layer of a P-type impurity region formed on an N− layer of an N-type impurity region. A plurality of trenches is formed through the b...
7804108 Semiconductor devices  
The semiconductor device has a collector electrode, a p+ collector region formed on the collector electrode, an n− drift region formed on the collector region, a p− body region formed on the dri...
7800168 Power semiconductor device  
A semiconductor device includes a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a trench formed from the surface of the barrier...
7799662 Power semiconductor device with soft switching characteristic and manufacturing method for same  
After introducing oxygen into an N− type FZ wafer serving as an N− type first semiconductor layer, a P type second semiconductor layer and an anode are formed on a surface of the FZ wafer. The FZ ...
7777249 Semiconductor device with enhanced switching speed and method for manufacturing the same  
A method for manufacturing a semiconductor device according to the present invention has a step of forming a plurality of MOSFETs each having a channel of a first conductivity type in a stripe on...
7750365 Insulated gate bipolar transistor with built-in freewheeling diode  
An insulated gate bipolar transistor includes a first main electrode on a first main surface and in contact with a base region of an insulated gate transistor at the first main surface, a first...
7732833 High-voltage semiconductor switching element  
In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter...
7696530 Dual-gate sensor  
A sensor includes a first gate electrode, a second gate electrode, a semiconductor layer, a gate-insulating layer, a source electrode, a drain electrode, and a sensing portion including an...
7675113 Insulated gate transistor  
A charge storage layer of first conductive type is formed on the first principal surface of a semiconductor substrate. A base layer of second conductive type is formed on the charge storage layer....
7641316 Ink jet head circuit board, method of manufacturing the same and ink jet head using the same  
An ink jet head circuit board is provided which has heaters to generate thermal energy for ink ejection as they are energized. This circuit board reduces areas of the heaters to achieve higher...
7622754 Semiconductor device and fabrication method thereof  
A p-type collector layer is formed on a reverse side of an n-type high-resistivity first base layer, a p-type second base layer is formed on an obverse side of the first base layer, an emitter...
7616859 Semiconductor device  
A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by...
RE40712 High-breakdown-voltage semiconductor apparatus  
A high-breakdown-voltage semiconductor apparatus is provided, wherein when a gate capacitance of that portion of a gate electrode, under which a channel is formed, is Cg[F], a resistance in a...
7485921 Trench gate type MOS transistor semiconductor device  
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer,...
7432135 Semiconductor device and method of manufacturing the same  
A semiconductor device, including: a semiconductor substrate of a first conductivity type having a first and second major surfaces; a first conductivity type semiconductor layer formed on the first...
7417282 Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode  
The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions...
7335947 Angled implant for shorter trench emitter  
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending...
7309898 Method and apparatus for providing noise suppression in an integrated circuit  
A method and apparatus for improving the latchup tolerance of circuits embedded in an integrated circuit while avoiding the introduction of noise from such tolerance into the power rails.
7247887 Segmented channel MOS transistor  
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor man...
7186355 Insulated nanoscopic pathways, compositions and devices of the same  
The present invention relates to compositions which provide an insulated nanoscopic pathway. The pathway comprises molecules, polymers or nanoscopic particles capable of conducting charge...
7173290 Thyristor switch with turn-off current shunt, and operating method  
A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor...
Matches 1 - 50 out of 256 1 2 3 4 5 6 >