Patents in Class 257/133

Matches 1 - 50 out of 320

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Match	Document	Document Title
1	8441031	ESD protection device Electrostatic discharge (ESD) protection is provided for discharging current between input and output nodes. In accordance with various embodiments, an ESD protection device includes an open-base...
2	8421118	Regenerative building block and diode bridge rectifier and methods A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow...
3	8421077	Replacement gate MOSFET with self-aligned diffusion contact A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack is formed in a cavity formed by...
4	8399907	VTS insulated gate bipolar transistor In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift...
5	8362519	Semiconductor device The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element...
6	8344416	Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits An integrated circuit includes at least one transistor over a substrate. A first guard ring is disposed around the at least one transistor. The first guard ring has a first type dopant. A second...
7	8330185	Semiconductor device having semiconductor substrate including diode region and IGBT region A semiconductor device, including a semiconductor substrate in which a diode region and an IGBT region are formed, is provided. A lifetime control region is formed within a diode drift region. The...
8	8299539	Semiconductor device having IGBT and FWD on same substrate A semiconductor device includes: a semiconductor substrate; an IGBT element including a collector region; a FWD element including a cathode region adjacent to the collector region; a base layer on...
9	8299496	Semiconductor device having semiconductor substrate including diode region and IGBT region Provided is a semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed. A separation region formed of a p-type semiconductor is formed in a...
10	8294218	Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection An integrated circuit with gate self-protection comprises a MOS device and a bipolar device, wherein the integrated circuit further comprises a semiconductor layer with electrically active regions...
11	8278682	Semiconductor device A semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure between an active region and an...
12	8258542	Semiconductor devices and semiconductor apparatuses including the same Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on...
13	8227831	Semiconductor device having a junction FET and a MISFET for control A semiconductor device having a junction FET having improved characteristics is provided. The semiconductor device has a junction FET as a main transistor and has a MISFET as a transistor for...
14	8222671	Power semiconductor devices This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits. The techniques we describe are particularly useful for so-called...
15	8212283	Reverse-conducting semiconductor device A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of...
16	8188540	High breakdown voltage double-gate semiconductor device A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the...
17	8178947	Semiconductor device There is provided a semiconductor device in which an amount of fluctuations in output capacitance and feedback capacitance is reduced. In a trench-type insulated gate semiconductor device, a width...
18	8164110	Integrated lateral high-voltage diode and thyristor The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a...
19	8148748	Adjustable field effect rectifier An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages...
20	8143644	Bipolar device compatible with CMOS process technology A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on the semiconductor substrate; a gate...
21	8138521	Thyristor semiconductor device and switching method thereof The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first semiconductor region 20 is formed on...
22	8122596	System of fabricating a flexible electrode array An image is captured or otherwise converted into a signal in an artificial vision system. The signal is transmitted to the retina utilizing an implant. The implant consists of a polymer substrate...
23	8084783	GaN-based device cascoded with an integrated FET/Schottky diode device A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally...
24	8049278	ESD protection for high voltage applications An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well and the diffusion area has a dopant...
25	8049248	Semiconductor device including thyristor and method of manufacturing the same A semiconductor device includes a thyristor in which a first-conductivity-type first region, a second-conductivity-type second region having a conductivity type reverse to the first conductivity...
26	8035126	One-transistor static random access memory with integrated vertical PNPN device A one-transistor static random access memory (1T SRAM) device and circuit implementations are disclosed. The 1T SRAM device includes a planar field effect transistor (FET) on the surface of the...
27	8022506	SOI device with more immunity from substrate voltage A semiconductor on insulator device has an insulator layer, an active layer (40) on the insulator layer, a lateral arrangement of collector (10), emitter (30) and base (20) on the active layer, and...
28	8015538	Design structure with a deep sub-collector, a reach-through structure and trench isolation The invention relates to noise isolation in semiconductor devices, and a design structure on which a subject circuit resides. A design structure is embodied in a machine readable medium used in a...
29	7982239	Power switching transistors In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source,...
30	7982240	Bidirectional electronic switch A main semiconductor region grown on a substrate has formed on its surface a pair of main electrodes spaced from each other, a gate electrode between the main electrodes, and a pair of...
31	7968940	Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Double gate IGBT having both gates referred to a cathode in which a second gate is for controlling flow of hole current. In on-state, hole current can be largely suppressed. While during switching,...
32	7961540	Dynamic data restore in thyristor-based memory device A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal...
33	7952143	Semiconductor device having IGBT and diode A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part...
34	7948005	Insulated-gate bipolar transistor (IGBT) A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking...
35	7939850	Semiconductor device and method for producing a semiconductor device A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is...
36	7915638	Symmetric bidirectional silicon-controlled rectifier The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a...
37	7915678	Snapback capable NLDMOS, DMOS and extended voltage NMOS devices In an NLDMOS, DMOS and NMOS device, the ability is provided for withstanding snapback conditions by providing one or more p+ emitter regions interdigitated between drain regions having drain...
38	7902601	Semiconductor device having deep trench charge compensation regions and method In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the...
39	7897995	Lateral bipolar junction transistor with reduced base resistance A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the...
40	7897440	Vertical thyristor-based memory with trench isolation and method of fabrication thereof A semiconductor device may comprise a plurality of memory cells. A memory cell may comprise a thyristor, at least a portion of which is formed in a pillar of semiconductor material. The pillar may...
41	7893457	Bipolar mosfet devices and methods for their use A semiconductor device includes at least one cell including a base region of a first conductivity type having disposed therein at least one emitter region of a second conductivity type, a first...
42	7883941	Methods for fabricating memory cells and memory devices incorporating the same A method for fabricating a memory device is provided. A semiconductor layer is provided that includes first, second, third and fourth well regions of a first conductivity type in the semiconductor...
43	7872315	Electronic switching device An integrated switching device has a switching IGFET connected between a pair of main terminals, a protector IGFET connected between the drain and gate electrodes of the switching IGFET, and a gate...
44	7868353	Solid-state switch capable of bidirectional operation A monolithic switching device including a main semiconductor region configured to provide a current-carrying channel as in the form of two-dimensional electron gas. Disposed symmetrically on a...
45	7859011	High ion/Ioff SOI MOSFET using body voltage control A semiconductor device may comprise a partially-depleted SOI MOSFET having a floating body region disposed between a source and drain. The floating body region may be driven to receive injected...
46	7847316	Semiconductor device and its manufacture A reliable semiconductor device is provided which comprises lower and upper IGBTs 1 and 2 preferably bonded to each other by solder, and a wire strongly connected to lower IGBT 1. The semiconductor...
47	7810233	System of fabricating a flexible electrode array An image is captured or otherwise converted into a signal in an artificial vision system. The signal is transmitted to the retina utilizing an implant. The implant consists of a polymer substrate...
48	7808223	Transistor with spatially integrated schottky diode An integrated circuit device for delivering power to a load includes a composite transistor and a composite schottky diode. The composite transistor is formed by a plurality of component...
49	7804107	Thyristor semiconductor device and method of manufacture In a method of processing a semiconductor device, a silicide-blocking layer may be formed over a semiconductor material. After defining the silicide-blocking layer, impurities may be implanted into...
50	7786505	Reduction of charge leakage from a thyristor-based memory cell Formation of a thyristor-based memory cell is described. A first gate dielectric of the storage element is formed over a base region thereof located in a silicon layer. A transistor is coupled to...

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