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8785968 Silicon controlled rectifier (SCR) device for bulk FinFET technology  
Some aspects relate to a semiconductor device disposed on a semiconductor substrate. The device includes an STI region that laterally surrounds a base portion of a semiconductor fin. An anode...
8772836 Semiconductor device  
To provide a semiconductor device in which a rectifying element capable of reducing a leak current in reverse bias when a high voltage is applied and reducing a forward voltage drop Vf and a...
8766325 Semiconductor device  
A semiconductor device includes: an n−-type base layer; a p-type base layer formed in a part of a front surface portion of the n−-type base layer; an n+-type source layer formed in a part of a fro...
8759938 Semiconductor device  
A semiconductor device includes a superjunction structure. The influence of external charge on device performance is suppressed using a shield electrode, field plate electrodes, and cover...
8748936 Methods and structures for electrostatic discharge protection  
A semiconductor device includes a first well region of a first conductivity type, a second well region of a second conductive type within the first well region. A first region of the first...
8723165 Vertical electro-optical component and method of fabricating the same  
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a...
8710543 Cascode circuit device with improved reverse recovery characteristic  
A semiconductor device including: an FET; a MOSFET having a drain thereof connected with a source of the FET; a resistor having one end thereof connected with a gate of the FET and having the other...
8710568 Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a...
8710542 Semiconductor device  
A semiconductor device includes a base layer, a second conductivity type semiconductor layer, a first insulating film, and a first electrode. The first insulating film is provided on an inner wall...
8704271 Bidirectional electrostatic discharge (ESD) protection  
A bidirectional electrostatic discharge (ESD) protection device includes a substrate having a topside semiconductor surface that includes a first silicon controlled rectifier (SCR) and a second SCR...
8698195 Semiconductor device  
A stabilizing plate portion is formed in a region of a first main surface lying between first and second insulated gate field effect transistor portions. The stabilizing plate portion includes a...
8659052 Semiconductor device and method for manufacturing the same  
A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. The diode region includes a first layer embedded in a diode trench...
8659079 Transistor device and method for manufacturing the same  
Provided is a transistor device including at least a vertical transistor structure. The vertical transistor structure includes a substrate, a dielectric layer, a gate, a first doped region, a...
8643056 Power semiconductor device and method of manufacturing the same  
A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer...
8604512 Bidirectional switch  
A bidirectional switch includes a semiconductor element and a substrate potential stabilizer. The semiconductor element includes a first ohmic electrode and a second ohmic electrode, and a first...
8598620 MOSFET with integrated field effect rectifier  
A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER...
8592881 Organic light emitting element and method of manufacturing the same  
An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an...
8587224 Variable gate field-effect transistor and electrical and electronic apparatus including the same  
Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an...
8581298 Semiconductor device  
A semiconductor device includes: a semiconductor layer having a first end portion and a second end portion; a first main electrode provided on the first end portion and electrically connected to...
RE44547 Semiconductor device having deep trench charge compensation regions and method  
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the...
8552468 Power semiconductor device  
A semiconductor layer has a first layer of first conductive type, a second layer of second conductive type, and a third layer. The third layer has a first region of first conductive type, and a...
8546847 Semiconductor device and power conversion apparatus using the same  
A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be...
8541787 High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability  
High power wide band-gap MOSFET-gated bipolar junction transistors (“MGT”) are provided that include a first wide band-gap bipolar junction transistor (“BJT”) having a first collector, a first e...
8519432 Semiconductor switch  
A semiconductor switch comprises a PNPN structure arranged to provide an SCR-like functionality, and a MOS gate structure, preferably integrated on a common substrate. The switch includes ohmic...
8502478 Variable gate field-effect transistor and electrical and electronic apparatus including the same  
Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an...
8497526 Low triggering voltage DIAC structure  
In a DIAC-like device that includes an n+ and a p+ region connected to the high voltage node, and an n+ and a p+ region connected to the low voltage node, at least two MOS devices are formed...
8471291 Semiconductor device  
In a semiconductor device in which a diode and an IGBT are formed in a main region of a same semiconductor substrate, in order to obtain a sufficiently large sense IGBT current in a stable manner,...
8441031 ESD protection device  
Electrostatic discharge (ESD) protection is provided for discharging current between input and output nodes. In accordance with various embodiments, an ESD protection device includes an open-base...
8421118 Regenerative building block and diode bridge rectifier and methods  
A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow...
8421077 Replacement gate MOSFET with self-aligned diffusion contact  
A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack is formed in a cavity formed by...
8399907 VTS insulated gate bipolar transistor  
In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift...
8362519 Semiconductor device  
The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element...
8344416 Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits  
An integrated circuit includes at least one transistor over a substrate. A first guard ring is disposed around the at least one transistor. The first guard ring has a first type dopant. A second...
8330185 Semiconductor device having semiconductor substrate including diode region and IGBT region  
A semiconductor device, including a semiconductor substrate in which a diode region and an IGBT region are formed, is provided. A lifetime control region is formed within a diode drift region. The...
8299539 Semiconductor device having IGBT and FWD on same substrate  
A semiconductor device includes: a semiconductor substrate; an IGBT element including a collector region; a FWD element including a cathode region adjacent to the collector region; a base layer on...
8299496 Semiconductor device having semiconductor substrate including diode region and IGBT region  
Provided is a semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed. A separation region formed of a p-type semiconductor is formed in a...
8294218 Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection  
An integrated circuit with gate self-protection comprises a MOS device and a bipolar device, wherein the integrated circuit further comprises a semiconductor layer with electrically active regions...
8278682 Semiconductor device  
A semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure between an active region and an...
8258542 Semiconductor devices and semiconductor apparatuses including the same  
Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on...
8227831 Semiconductor device having a junction FET and a MISFET for control  
A semiconductor device having a junction FET having improved characteristics is provided. The semiconductor device has a junction FET as a main transistor and has a MISFET as a transistor for...
8222671 Power semiconductor devices  
This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits. The techniques we describe are particularly useful for so-called...
8212283 Reverse-conducting semiconductor device  
A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of...
8188540 High breakdown voltage double-gate semiconductor device  
A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the...
8178947 Semiconductor device  
There is provided a semiconductor device in which an amount of fluctuations in output capacitance and feedback capacitance is reduced. In a trench-type insulated gate semiconductor device, a width...
8164110 Integrated lateral high-voltage diode and thyristor  
The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a...
8148748 Adjustable field effect rectifier  
An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages...
8143644 Bipolar device compatible with CMOS process technology  
A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on the semiconductor substrate; a gate...
8138521 Thyristor semiconductor device and switching method thereof  
The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first semiconductor region 20 is formed on...
8122596 System of fabricating a flexible electrode array  
An image is captured or otherwise converted into a signal in an artificial vision system. The signal is transmitted to the retina utilizing an implant. The implant consists of a polymer substrate...
8084783 GaN-based device cascoded with an integrated FET/Schottky diode device  
A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally...
Matches 1 - 50 out of 347 1 2 3 4 5 6 7 >