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8183576 |
Light-emitting diodes including perpendicular-extending nano-rods
Light-emitting diodes, and methods of manufacturing the light-emitting diode, are provided wherein a plurality of nano-rods may be formed on a reflection electrode. The plurality of nano-rods...
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8183555 |
Semiconductor light emitting device and method for manufacturing the same
A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor...
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8183577 |
Controlling pit formation in a III-nitride device
A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of...
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8178891 |
Semiconductor light emitting device and method for manufacturing the same
Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride...
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8174001 |
Organic electroluminescence element
An organic electroluminescence element including at least two light-emitting layers disposed between an anode and a cathode, wherein the at least two light-emitting layers include a light-emitting...
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8174084 |
Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon...
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8174025 |
Semiconductor light emitting device including porous layer
A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light...
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8173469 |
Fabrication method of light emitting device
Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a...
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8168966 |
GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layer 13 having n-type conductivity, (B) an active layer 15 having a multi-quantum well...
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8168967 |
Organic light emitting device and method of manufacturing the same
An organic light emitting device and a method of manufacturing the same, the device including: a substrate; a barrier layer; a first electrode; a second electrode; and an organic layer interposed...
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8168965 |
Semiconductor device and method using nanotube contacts
A semiconductor device includes at least one semiconductor layer, a metal layer in electrical contact with the semiconductor layer, and a carbon nanotube contact layer interposed between the metal...
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8168986 |
GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus
A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second...
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8164104 |
Light emitting element array and image forming apparatus
A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are...
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8164084 |
Light-emitting device
A light-emitting device with a tunneling structure and a current spreading layer is disclosed. It includes an electrically conductive permanent substrate, an adhesive layer, an epitaxial structure,...
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8164083 |
Quantum dot optoelectronic devices with enhanced performance
An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot...
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8154008 |
Light emitting diode with improved structure
A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based...
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8154009 |
Light emitting structure including high-al content MQWH
A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN...
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8148712 |
Group III nitride compound semiconductor stacked structure
An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is...
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8148733 |
Vertical LED with current guiding structure
Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low...
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8148713 |
Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of...
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8148714 |
Light-emitting device and method for producing light emitting device
A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy...
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8148734 |
Light emitting device having a lateral passivation layer
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type...
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8148741 |
Polychromatic LED's and related semiconductor devices
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum...
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8143629 |
Lighting system and lighting device
An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light...
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8143643 |
Light device and fabrication method thereof
The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an...
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8143614 |
GaN based light emitters with band-edge aligned carrier blocking layers
Band-edge aligned carrier blocking layers are introduced into wurtzite or zinc blend Gallium Nitride based diode laser and LEDs in order to prevent thermionic emission and the overflow of carriers...
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8143613 |
Organic light emitting device having multiple separate emissive layers
An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the...
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8138493 |
Optoelectronic semiconductor device
The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer...
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8138516 |
Light emitting diode
A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal wiring layer; wherein the light emitting...
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8134174 |
Light-emitting diode
A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an...
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8129260 |
Semiconductor substrates having low defects and methods of manufacturing the same
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group...
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8129744 |
Light emitting device
A light emitting device is provided that includes a substrate, a light emitting unit formed on the substrate, and an encapsulation unit. The encapsulation unit may include a first region...
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8129710 |
Plasmon enhanced nanowire light emitting diode
A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding...
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8124990 |
Semiconductor light emitting device having an electron barrier layer between a plurality of active layers
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type...
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8124958 |
Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge...
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8124960 |
Nitride semiconductor light emitting diode
A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where...
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8124996 |
White light devices using non-polar or semipolar gallium containing materials and phosphors
A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific...
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8124989 |
Light optoelectronic device and forming method thereof
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes...
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8124957 |
Low resistance tunnel junctions in wide band gap materials and method of making same
A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band...
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8120046 |
Light-emitting element
A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type...
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8120012 |
Group III nitride white light emitting diode
A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the...
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8120009 |
Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting...
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8120008 |
Carbon-nanotube based opto-electric device
A carbon nano-tube based photoelectric device includes a substrate and a carbon nanotube (CNT) over the substrate. The CNT comprises a first end and a second end, wherein the CNT has a CNT work...
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8120010 |
Quantum dot electroluminescent device and method for fabricating the same
A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot...
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8120055 |
Light source
Embodiments of a light source are disclosed herein. An embodiment of the light source comprises a first terminal and a second terminal. The first terminal comprises a first terminal first portion...
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8120011 |
Opto-electronic device
The present application relates to an opto-electronic device. The opto-electronic device includes a first light-emitting structure and a second light-emitting structure. The first light-emitting...
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8115221 |
Single crystal nitride semiconductor material on conductive substrate using substrate decomposition prevention layer for nitride light emitting device
A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (...
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8115192 |
Light emitting device
A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦x≦1,...
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8106510 |
Nano-tube thermal interface structure
A semiconductor structure having: an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; a...
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8106378 |
Semiconductor quantum dot device
A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the...
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