Matches 1 - 50 out of 102 1 2 3 >


Match Document Document Title
9035440 Integrated circuit packaging system with a lead and method of manufacture thereof  
A method of manufacture of an integrated circuit packaging system includes: forming a package paddle; forming a lead adjacent to the package paddle; depositing a lead conductive cap on the lead,...
9018674 Reverse conducting insulated gate bipolar transistor  
A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region...
9012954 Adjustable field effect rectifier  
An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages...
8994003 Power-insulated-gate field-effect transistor  
To provide a power MISFET using oxide semiconductor. A gate electrode, a source electrode, and a drain electrode are formed so as to interpose a semiconductor layer therebetween, and a region of...
8952744 Semiconductor device and operating method for the same  
A semiconductor device and an operating method for the same are provided. The semiconductor device includes a first doped region, a second doped region, a first doped contact, a second doped...
8946767 Monolithic semiconductor switches and method for manufacturing  
A semiconductor device and method are disclosed. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel...
8946766 Bi-directional silicon controlled rectifier structure  
Bi-directional silicon controlled rectifier device structures and design structures, as well as fabrication methods for bi-directional silicon controlled rectifier device structures. A well of a...
8907373 Electronic device for protecting from electrostatic discharge  
A protection device includes a triac and triggering units. Each triggering unit is formed by a MOS transistor configured to operate at least temporarily in a hybrid operating mode and a...
8860079 Semiconductor packages and methods of packaging semiconductor devices  
Semiconductor packages and methods of forming a semiconductor package are disclosed. The method includes providing at least one die having first and second surfaces. The second surface of the die...
8822274 Packaged IC having printed dielectric adhesive on die pad  
A method of assembling a packaged integrated circuit (IC) includes printing a viscous dielectric polymerizable material onto a die pad of a leadframe having metal terminals positioned outside the...
8796729 Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same  
Junction-isolated blocking voltage devices and methods of forming the same are provided. In certain implementations, a blocking voltage device includes an anode terminal electrically connected to...
8786033 Biometric sensor and sensor panel, method for detecting biometric pattern using the same, and method for manufacturing the same  
A biometric sensor panel includes (a) a first flexible substrate, (b) a plurality of first electrodes formed on the first flexible substrate, the first electrodes being arranged in a first...
8704271 Bidirectional electrostatic discharge (ESD) protection  
A bidirectional electrostatic discharge (ESD) protection device includes a substrate having a topside semiconductor surface that includes a first silicon controlled rectifier (SCR) and a second...
8686470 ESD protection circuit  
An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD protection circuit includes a diode-type circuit having a p-n...
8643055 Series current limiter device  
Semiconductor protection devices, and related methods and systems, especially devices for providing series current limiting. The device typically comprises two regenerative building blocks and/or...
8642403 Replacement contacts for all-around contacts  
In one aspect, a method of forming contacts to source and drain regions in a FET device includes the following steps. A patternable dielectric is deposited onto the device so as to surround each...
8598620 MOSFET with integrated field effect rectifier  
A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER...
8563986 Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices  
Semiconductor switching devices include a wide band-gap drift layer having a first conductivity type (e.g., n-type), and first and second wide band-gap well regions having a second conductivity...
8441031 ESD protection device  
Electrostatic discharge (ESD) protection is provided for discharging current between input and output nodes. In accordance with various embodiments, an ESD protection device includes an open-base...
8431986 Semiconductor device having three-dimensional transistor and manufacturing method thereof  
A semiconductor device includes a silicon pillar formed substantially perpendicular to a principal surface of a silicon substrate, a first impurity diffusion layer and a second impurity diffusion...
8421118 Regenerative building block and diode bridge rectifier and methods  
A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a...
8357952 Power semiconductor structure with field effect rectifier and fabrication method thereof  
A power semiconductor structure with a field effect rectifier having a drain region, a body region, a source region, a gate channel, and a current channel is provided. The body region is...
8354690 Solid-state pinch off thyristor circuits  
Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to...
8344415 Semiconductor component  
A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second...
8338855 Voltage-controlled bidirectional switch  
A voltage-controlled vertical bi-directional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the...
8217453 Bi-directional DMOS with common drain  
A three terminal bi-directional laterally diffused metal oxide semiconductor (LDMOS) transistor which includes two uni-directional LDMOS transistors in series sharing a common drain node, and...
8193559 Monolithic semiconductor switches and method for manufacturing  
One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source...
8148748 Adjustable field effect rectifier  
An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages...
8008687 Electrostatic discharge protection device  
An electrostatic discharge protection device including a substrate, a first doped region, a first gate electrode, a second doped region, a second gate electrode, and a third doped region is...
7973387 Insulated gate bipolar transistor  
An insulated gate bipolar transistor includes bump pad connectors to provide thermal contact with a heat spreader for dissipating heat away form the insulated gate bipolar transistor.
7943955 Monolithic semiconductor switches and method for manufacturing  
One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and...
7915638 Symmetric bidirectional silicon-controlled rectifier  
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a...
7910950 High voltage ESD LDMOS-SCR with gate reference voltage  
In an LDMOS-SCR ESD protection structure gate voltage of an ESD protection LDSCR is defined by connecting the gate to the source of a reference LDSCR. The reference LDSCR is implemented as a...
7872315 Electronic switching device  
An integrated switching device has a switching IGFET connected between a pair of main terminals, a protector IGFET connected between the drain and gate electrodes of the switching IGFET, and a...
7626214 Small-sized semiconductor device featuring protection circuit for MOSFET  
In a semiconductor device, a metal oxide semiconductor field effect transistor (MOSFET) is formed in a semiconductor substrate, and an isolation layer is formed on the semiconductor substrate so...
7605435 Bi-directional MOSFET power switch with single metal layer  
A bi-directional power switch is formed as a monolithic semiconductor device. The power switch has two MOSFETs formed with separate source contacts to the external package and a common drain. The...
7589359 Silicon controlled rectifier  
A silicon controlled rectifier structure with the symmetrical layout is provided. The N-type doped regions and the P-type doped regions are disposed with the N-well and symmetrically arranged...
7141831 Snapback clamp having low triggering voltage for ESD protection  
An SCR device having a first P type region disposed in a semiconductor body and electrically connected to anode terminal of the device. At least one N type region is also disposed in the body...
7053423 Thyristor having a first emitter with relatively lightly doped portion to the base  
A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter...
6906354 T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same  
A T-RAM array having a plurality of T-RAM cells is presented where each T-RAM cell has dual devices. Each T-RAM cell is planar and has a buried vertical thyristor and a horizontally stacked...
6838321 SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE CAPABLE OF BIDIRECTIONALLY RETAINING BREAKDOWN VOLTAGE AND METHOD OF MANUFACTURING THE SAME  
An N−-type silicon substrate (1) has a bottom surface and an upper surface which are opposed to each other. In the bottom surface of the N−-type silicon substrate (1), a P-type impurity diffusion...
6677616 Fabrication method of thin film transistor substrate for X-ray detector  
A method of fabricating a thin film transistor substrate for an X-ray detector reduces the number of steps in etching processes using masks. In the method, a gate line, a gate pad and a gate...
6674131 Semiconductor power device for high-temperature applications  
In a SiC substrate (10), a first active region (12) composed of n-type heavily doped layers (12a) and undoped layers (12b), which are alternately stacked, and a second active region (13) composed...
6661036 Semiconductor switches with evenly distributed fine control structures  
Semiconductor structure configured as a semiconductor switch that can be used in various forms to switch currents. Semiconductor switch comprising non-doped or very lightly doped semiconductor...
6617661 High voltage component and method for making same  
A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series...
6580100 Voltage-controlled vertical bidirectional monolithic switch  
A vertical voltage-controlled bidirectional monolithic switch formed between the upper and lower surfaces of a semiconductor substrate surrounded with a peripheral wall, including: a first...
6576935 Bidirectional semiconductor device and method of manufacturing the same  
A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The...
6545297 High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown  
Area efficient static memory cells and arrays containing p-n-p-n transistors which can be latched in a bistable on state. Each transistor memory cell includes a gate which is pulse biased during...
6541801 Triac with a holding voltage that is greater than the dc bias voltages that are on the to-be-protected nodes  
The holding voltage (the minimum voltage required for operation) of a triac is increased to a value that is greater than a dc bias on to-be-protected nodes. The holding voltage is increased by...
6501137 Electrostatic discharge protection circuit triggered by PNP bipolar action  
An electrostatic discharge protection circuit, comprising a semiconductor-controlled rectifier and a PMOS device. The semiconductor-controlled rectifier, coupled between two nodes, has an N-type...

Matches 1 - 50 out of 102 1 2 3 >