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7667241 Electrostatic discharge protection device  
An electrostatic discharge protection device for protecting a node includes a transistor, a silicon controlled rectifier, a second contact region laterally displaced from the first contact region,...
7538362 Lateral semiconductor diode and method for fabricating it  
The invention relates to a lateral semiconductor diode, in which contact metal fillings ( 6, 7 ), which run in trenches ( 3, 4 ) in particular in a silicon carbide body ( 1, 2 ), are interdigitated...
7465964 Semiconductor device in which an injector region is isolated from a substrate  
A high voltage/power semiconductor device has a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer. Low and high voltage terminals are connected to...
7414273 Two-dimensional silicon controlled rectifier  
A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area)...
7387908 CMOS imager with enhanced transfer of charge and low voltage operation and method of formation  
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are...
7365372 Semiconductor device and method for manufacturing semiconductor device  
The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type...
7342282 Compact SCR device and method for integrated circuits  
A semiconductor device and method for electrostatic discharge protection. The semiconductor device includes a first semiconductor controlled rectifier and a second semiconductor controlled...
7288450 General protection of an integrated circuit against permant overloads and electrostatic discharges  
In an integrated circuit, a diode is interposed between the semiconductor substrate and the contact pad to an external bias voltage, and the substrate is biased at an internal voltage reference....
7285824 Semiconductor device having a lateral diode structure  
A semiconductor device comprises: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type provided on the semiconductor layer, the first...
7262443 Silicide uniformity for lateral bipolar transistors  
Method and apparatus for forming a semiconductor device. The method includes defining a plurality of rows in a semiconductor layer. Thereafter, on one or more of the plurality of rows, one or more...
7205629 Lateral super junction field effect transistor  
A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provided as a power transistor with a voltage rating >200V....
7196361 Cascoded bi-directional high voltage ESD protection structure  
In a high voltage ESD protection solution, a plurality of DIACs are connected together to define a cascaded structure with isolation regions provided to prevent n-well and p-well punch through. An...
7145185 Voltage-controlled bidirectional switch  
The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate ( 1 ) comprising first and second vertical thyristors (Th 1 , Th 2 ), a first electrode (A 2 ) of the...
7050125 Transferring TFT method with adhesive layer  
A method of manufacturing an active matrix substrate comprises forming a plurality of elements on an element formation substrate, forming wirings on a final substrate, transferring some elements...
6963087 Pulsed bistable bidirectional electronic switch  
The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate ( 1 ) whereof the rear surface (A 2 ) is coated with a...
6924531 LDMOS device with isolation guard rings  
A method of forming a LDMOS semiconductor device and structure for same. A preferred embodiment comprises forming a first guard ring around and proximate the drain of a LDMOS device, and forming a...
6911679 LVTSCR with compact design  
In an ESD protection device making use of a LVTSCR, at least one contacted drain and at least one emitter are formed, and are arranged laterally next to each other to be substantially equidistant...
6894351 Semiconductor device for electrostatic protection  
The invention makes it possible to form thyristers and SCRs that show a good discharge efficiency upon application of static electricity in semiconductor devices using a SOI substrate. A...
6870202 Surge protection semiconductor device  
A pnpn thyristor element Thy 1 and six pn diode elements D 1, D 2, D 3, D 4, D 5, and D 6 are formed in a semiconductor substrate of a first conductivity type, and separated into six regions...
6806510 Semiconductor device with surge protective component and method of manufacturing the semiconductor device  
In order to provide a reliable surge protective component with a straightforward manufacturing process, first and second buried layers are diffused over the entire inside surfaces of a...
6777721 SCR device for ESD protection  
The present invention provides a novel ESD structure for protecting an integrated circuit (IC) from ESD damage and a method of fabricating the ESD structure on a semiconductor substrate. The ESD...
6617661 High voltage component and method for making same  
A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series...
6541801 Triac with a holding voltage that is greater than the dc bias voltages that are on the to-be-protected nodes  
The holding voltage (the minimum voltage required for operation) of a triac is increased to a value that is greater than a dc bias on to-be-protected nodes. The holding voltage is increased by...
6023078 Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability  
Silicon carbide power devices include a semiconductor substrate of first conductivity type (e.g., N-type) having a face thereon and a blocking voltage supporting region of first conductivity type...
5982016 Monolithic component associating a high-voltage component and logic components  
A monolithic component including, in an N-type lightly-doped substrate of a semiconductor wafer, two portions separated by a P-type insulating wall. A first portion of the two portions includes a...
5818282 Bridge circuitry comprising series connection of vertical and lateral MOSFETS  
A field relaxation region of the second conductivity type is formed between the base region and a drain electrode contact portion at which the drain region contacts with a drain electrode but...
5608236 Semiconductor device  
A semiconductor device includes an emitter region, a collector region provided directly under the emitter region, and a two-region base structure. The first base region is interposed between the...
5608235 Voltage-controlled bidirectional switch  
A voltage-controlled power monolithic bidirectional switch has two main terminals and includes a control electrode whose voltage is referenced to one of the main terminals. The switch includes a...
5587595 Lateral field-effect-controlled semiconductor device on insulating substrate  
A field-effect-controlled semiconductor device has a cathode, an anode, and a gate, and extends laterally on a first insulating layer covering a substrate. The device includes a main thyristor, a...
5502317 Silicon controlled rectifier and method for forming the same  
A semiconductor controlled rectifier is disclosed herein. In a preferred embodiment, a first n-doped region 112 is formed in a p-doped semiconductor layer 126. A first n-well region 122 is formed...
5497010 High-voltage semiconductor device  
The high-voltage semiconductor device includes a single chip having a plurality of semiconductor elements connected in series with each other which includes an insulating substrate (2); a...
5446295 Silicon controlled rectifier with a variable base-shunt resistant  
An optically triggered silicon controlled rectifier (SCR) circuit (20) has a number of semiconductor layers diffused into an N- substrate (21). The layers form an SCR (50) having a P+ anode region...
5345094 Light triggered triac device and method of driving the same  
Disclosed is a semiconductor device comprising an output Triode AC switch with a vertical structure, which is provided in a silicon substrate and has a gate, a first output terminal and a second...
5298769 GTO thyristor capable of preventing parasitic thyristors from being generated  
A GTO thyristor includes a p-type emitter layer, an n-type base layer, a p-type base layer and an n-type emitter layer. An additional n-type layer is formed on the p-type base layer next to the...
5293051 Photoswitching device including a MOSFET for detecting zero voltage crossing  
A switching device includes a thyristor and a MOSFET, and a voltage clamp circuit. The voltage clamp circuit includes an N + type contact region formed in a surface layer of a N type substrate...
5142348 Lateral thyristor  
A lateral thyristor is provided which includes a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on the semiconductor substrate, an...
4947226 Bilateral switching device  
A bilateral switch device capable of conducting a current therethrough established by a first control signal and ended by an alternate control signal and having a low "on" resistance.
4912541 Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication  
A monolithically integrated reverse conducting lateral insulated gate semiconductor device includes an inherent four layer structure which supplies a sufficient base drive to turn on an inherent...
4857977 Lateral metal-oxide-semiconductor controlled triacs  
Lateral MOS controlled gate turn-off triacs with large OFF-Gate-width to emitter-width ratios. In one embodiment an ON channel is provided at one main electrode and an OFF channel is provided at...
4742380 Switch utilizing solid-state relay  
A solid-state relay is combined with a control circuit to form a switch which is bilateral and linear through the origin, can withstand large current or voltage surges, and can be toggled either...
4691220 Radial high voltage bidirectional switch structure with concavo-concave shaped semiconductor regions  
An improved radial type high voltage solid-state switch is essentially a gated diode switch (GDS) having two anode regions, two gate regions, a common cathode region, and a common shield region....
4633283 Circuit and structure for protecting integrated circuits from destructive transient voltages  
A protection circuit comprises first and second circuit to respectively protect an IC against negative and positive going transients in an input signal. If the input includes a repetitive signal...
4622568 Planar field-shaped bidirectional power FET  
Lateral planar FET structure (2) is disclosed for bidirection power switching, including AC application. Voltage blocking capability is enhanced in the lateral current flow device (2) by field...
4613884 Light controlled triac with lateral thyristor firing complementary main thyristor section  
The invention relates to a controllable semiconductor circuit element consisting of a vertical thyristor comprised of four zones of alternating conductivity types and arranged in a semiconductor...
4612562 PNPN switch device with capacitor formed outside active device areas  
A PNPN switch device with a circuit for preventing an error due to a surge voltage. The circuit comprises two capacitors. The first capacitor is formed in a P-type gate region. The second capacitor...
4471372 FET Controlled Triac  
Bidirectional thyristor or Triac, including a semiconductor body, first and second antiparallel-connected thyristor sections integrated in the semiconductor body, each of the thyristor sections...
4467344 Bidirectional switch using two gated diode switches in a single dielectrically isolated tub  
A semiconductor structure contains two interconnected gated diode switches in a common dielectrically isolated semiconductor tub. This structure functions as a bidirectional switch. A gate region...
4447744 Control circuitry for high voltage solid-state switches  
Control circuitry used with the combination of a control switch (typically a gated diode switch GDS) which is coupled to a control (gate) terminal of a like load switch which consists essentially...
4414560 Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region  
A high-voltage, high current switching device is formed of two D-MOS transistors which are merged together to have a common drain and insulated metal gate. At the time P-type regions for the two...
4216488 Lateral semiconductor diac  
The specification discloses a lateral diac including a semiconductor body having three alternating layers of first and second opposite conductivity types of semiconductor material. An isolating...
Matches 1 - 50 out of 63 1 2 >