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9041143 Semiconductor devices  
The semiconductor device includes a first semiconductor layer of the first conductive type, a second semiconductor layer having the cubic crystalline structure formed on the first semiconductor...
9006863 Diode string voltage adapter  
A diode string voltage adapter includes diodes formed in a substrate of a first conductive type. Each diode includes a deep well region of a second conductive type formed in the substrate. A first...
8946766 Bi-directional silicon controlled rectifier structure  
Bi-directional silicon controlled rectifier device structures and design structures, as well as fabrication methods for bi-directional silicon controlled rectifier device structures. A well of a...
8816388 Semiconductor device with gate protection diode  
Disclosed is a semiconductor device including: a semiconductor substrate; a field effect transistor formed on the semiconductor substrate; and a diode forming area adjacent to a forming area of...
8760831 Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structures  
Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional...
8723227 Heterojunction compound semiconductor protection clamps and methods of forming the same  
A protection clamp is provided between a first terminal and a second terminal, and includes a multi-gate high electron mobility transistor (HEMT), a current limiting circuit, and a forward trigger...
8710541 Bi-directional switch using series connected N-type MOS devices in parallel with series connected P-type MOS devices  
A bi-directional switch circuit includes a pair of N-type MOS devices connected in series with a common source terminal, and a pair of P-type MOS devices connected in series with a common source...
8563986 Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices  
Semiconductor switching devices include a wide band-gap drift layer having a first conductivity type (e.g., n-type), and first and second wide band-gap well regions having a second conductivity...
8357952 Power semiconductor structure with field effect rectifier and fabrication method thereof  
A power semiconductor structure with a field effect rectifier having a drain region, a body region, a source region, a gate channel, and a current channel is provided. The body region is...
8354690 Solid-state pinch off thyristor circuits  
Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to...
8212282 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter  
A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage...
7932537 Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same  
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same,...
7906812 Tunable voltage isolation ground to ground ESD clamp  
A tunable voltage isolation ground to ground ESD clamp is provided. The clamp includes a dual-direction silicon controlled rectifier (SCR) and trigger elements. The SCR is coupled between first...
7842967 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter  
A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage...
7786504 Bidirectional PNPN silicon-controlled rectifier  
The present invention discloses a bidirectional PNPN silicon-controlled rectifier comprising: a p-type substrate; a N-type epitaxial layer; a P-type well and two N-type wells all formed inside the...
7750437 Semiconductor device having a diode for a rectifier circuit  
A semiconductor device has a rectifier circuit and integrated circuit on a semiconductor substrate of a first conduction type, and has a first well region in the substrate, a second well region in...
7671379 Semiconductor system for voltage limitation  
A semiconductor system for voltage limitation includes a first cover electrode, a highly p-doped semiconductor layer that is connected to the first cover electrode, a slightly n-doped...
7663190 Tunable voltage isolation ground to ground ESD clamp  
A tunable voltage isolation ground to ground ESD clamp is provided. The clamp includes a dual-direction silicon controlled rectifier (SCR) and trigger elements. The SCR is coupled between first...
7622753 Ignition circuit  
A component formed in a substrate of a first conductivity type, having two inputs and two outputs and: a first diode having its anode connected to a first input and having its cathode connected to...
7605435 Bi-directional MOSFET power switch with single metal layer  
A bi-directional power switch is formed as a monolithic semiconductor device. The power switch has two MOSFETs formed with separate source contacts to the external package and a common drain. The...
7598536 Semiconductor device having load resistor and method of fabricating the same  
A semiconductor device includes a semiconductor substrate having a resistor region, an isolation layer disposed in the resistor region, the isolation layer defining active regions, first...
7528017 Method of manufacturing complementary diodes  
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same,...
7439563 High-breakdown-voltage semiconductor device  
A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions...
7436004 Semiconductor device  
An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first...
7427786 Diode device utilizing bellows  
A diode device is disclosed, comprising a pair of electrodes separated by bellows. The corrugated walls of the bellows create a tortuous thermal pathway thereby reducing parasitic heat losses and...
7402845 Cascoded rectifier package  
A semiconductor package that includes a compound component and a diode arranged in a cascode configuration to function as a rectifier.
7385231 Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element  
A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface...
7381998 Semiconductor integrated circuit device  
A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island...
7217980 CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection  
An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present...
7145185 Voltage-controlled bidirectional switch  
The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first...
7126204 Integrated semiconductor circuit with an electrically programmable switching element  
The invention relates to a semiconductor circuit (20) having an electrically programmable switching element (10), an “antifuse”, which includes a substrate electrode (2), produced in a substrate...
7053404 Active semiconductor component with an optimized surface area  
A semiconductor component in which the active junctions extend along at least one cylinder perpendicular to the main surfaces of a semiconductor chip substantially across the entire thickness...
6963087 Pulsed bistable bidirectional electronic switch  
The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate (1) whereof the rear surface (A2) is coated with a...
6906354 T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same  
A T-RAM array having a plurality of T-RAM cells is presented where each T-RAM cell has dual devices. Each T-RAM cell is planar and has a buried vertical thyristor and a horizontally stacked...
6825504 Semiconductor integrated circuit device and method of manufacturing the same  
In order to eliminate the difference in ESD resistance caused by polarities of excessive voltages applied to an external terminal and enhance ESD resistance of a semiconductor integrated circuit...
6723585 Leadless package  
A variety of leadless packaging arrangements and methods of packaging integrated circuits in leadless packages are disclosed. The described lead frames are generally arranged such that each device...
6603153 Fast recovery diode and method for its manufacture  
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer...
6593600 Responsive bidirectional static switch  
A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical...
6590349 Bidirectional flip-flop  
A bidirectional switch, including a first bidirectional switch between two power terminals of the switch, a low-voltage storage element between a first power terminal and a control terminal of the...
6583496 Single-control monolithic component for a composite bridge  
A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an...
6559481 Semiconductor device for precise measurement of a forward voltage effect  
A semiconductor device such as an IGBT, for realizing measurement precision for forward voltage effect characteristics using a relatively small current. It includes a second conductivity type of...
6437383 Dual trench isolation for a phase-change memory cell and method of making same  
The invention relates to a phase-change memory device. The device includes a double-trench isolation structure around the diode stack that communicates to the lower electrode. The present...
6396084 Structure of semiconductor rectifier  
A semiconductor rectifier includes a substrate of a first conductivity type; a current path layer of the first conductivity type formed near the surface of the substrate; a current block layer of...
6388276 Reverse conducting thyristor  
Providing a reverse conducting thyristor, wherein a diode and a GTO thyristor are reverse parallel-connected, with which it is possible to reduce a surface area size of a separation portion and...
6262443 Monolithic protected rectifying bridge  
The present invention relates to a semiconducting structure constituting a protected rectifying bridge implemented in an N-type semiconductor substrate divided into first, second, and third wells...
6180964 Low leakage wire bond pad structure for integrated circuits  
An improved bond pad structure for semiconductor devices provides improved electrical isolation between adjacent bond pads by incorporating a pair of pn junctions between the pad and substrate....
RE36770 MOS-controlled high-power thyristor  
This thyristor comprises a main current-carrying portion in the form of a semiconductor body having four layers, with contiguous layers being of different P and N conductivity types and with three...
5945723 Composite controlled semiconductor device  
In a composite controlled semiconductor device having an insulated gate and a power conversion device using the same, a p type semiconductor region forming no channel is provided in the composite...
5883401 Monolithic semiconductor switch and supply circuit component  
A monolithic semiconductor component has a first thyristor having a gate, an anode and a cathode. The gate is connected to the cathode through a first resistor and to the anode through the series...
5859446 Diode and power converting apparatus  
In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p+ conductivity type and an anode electrode do not contact each other, is made longer than the...

Matches 1 - 50 out of 98 1 2 >