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9041132 Solid-state image pickup device  
A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer...
9006780 Semiconductor device  
Between a back surface electrode and an electrode, a first thyristor is formed of fifth and seventh semiconductor regions, a substrate region, first and second semiconductor regions and a third...
8907372 Thyristor and method for the same  
A thyristor includes a base region, a pair of first doping regions, at least one second doping region, at least one third doping region, and a pair of metal layers. The first doping regions are...
8866125 Integration of LED driver circuit with LED  
Various embodiments provide materials and methods for integrating exemplary heterostructure field-effect transistor (HFET) driver circuit or thyristor driver circuit with LED structures to reduce...
8816468 Schottky rectifier  
A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more...
8796728 Photonically-activated single-bias fast-switching integrated thyristor  
Preferred embodiments of the invention include a thyristor core that is single biased by a source, such as a power source (or a portion thereof) that is being switched through the thyristors. An...
8748935 Light-emitting chip, print head, and image forming apparatus  
A light-emitting chip includes plural light-emitting thyristors having a first anode terminal, a first cathode terminal, and a first gate terminal, plural setting thyristors having a second anode...
8642986 Integrated circuit having microelectromechanical system device and method of fabricating the same  
An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a...
8598621 Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor  
A memory cell includes a thyristor having a plurality of alternately doped, vertically superposed semiconductor regions; a vertically oriented access transistor having an access gate; and a...
8552466 Low capacitance photodiode element and computed tomography detector  
A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of...
8536617 Optically triggered semiconductor device and method for making the same  
A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical...
8420454 Three-terminal power device with high switching speed and manufacturing process  
An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a...
8415710 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method  
A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged...
8310339 Method and system for triggering an operating device  
A system and methods are provided for triggering an operating device. In one embodiment, a triggering device includes a receiving unit configured to receive one or more wireless control signals....
8242534 Semiconductor device and manufacturing method thereof  
The present invention improves the performance of a semiconductor device formed with a triac. A thyristor is formed between a back surface electrode and an electrode by p-type semiconductor...
8174031 Light-emitting element chip, exposure device and image forming apparatus  
The light-emitting element chip includes: a substrate; a light-emitting portion including plural light-emitting elements each having a first semiconductor layer that has a first conductivity type...
8174285 Component provided with an integrated circuit comprising a cryptorocessor and method of installation thereof  
In order to protect an integrated circuit provided with a cryptoprocessor from attacks aiming to reveal secrets, it is anticipated to use a component sensitive to the activation of a parasitic...
8145020 Semiconductor device  
A semiconductor device includes a direct light-triggered thyristor triggered by an optical gate signal, a first optical fiber connected to the direct light-triggered thyristor and through which...
8124987 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Light-emitting element chip, exposure device and image forming apparatus
 
The light-emitting element chip includes: a substrate; a light-emitting portion including plural light-emitting elements each having a first semiconductor layer that has a first conductivity type...
8084764 Semiconductor light emitting device and nitride semiconductor light emitting device  
The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer...
7989841 Fast injection optical switch  
A fast injection optical switch is disclosed. The optical switch includes a thyristor having a plurality of layers including an outer doped layer and a switching layer. An area of the thyristor is...
7986353 Image sensing apparatus and imaging system  
An image sensing apparatus includes a pixel array including a light-shielded area where light-shielded pixels are arranged, and an effective area where non-light-shielded pixels are arranged. Each...
7884389 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method  
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor...
7834363 Light-emitting element having PNPN-structure and light-emitting element array  
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a...
7821016 Light activated silicon controlled switch  
The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one...
7723748 Semiconductor device including electrostatic discharge protection circuit  
A SGPMOS transistor includes a base, a P-type diffusion layer, a gate electrode, and a LOCOS oxide film. The base includes at least one of a N-type semiconductor substrate, a P-type semiconductor...
7715162 Optically triggered electro-static discharge protection circuit  
The present invention provides a method and apparatus for providing electro-static discharge (ESD) protection between a first and a second circuit node. One embodiment of the ESD protection...
7693360 Optoelectronic hybrid integrated module and light input/output apparatus having the same as component  
On the back surface of a transparent plate having a light extracting part for outputting lights to the outside, an electrode for wiring, and an electrode for an electromagnetic shield, an optical...
7687826 Thyristor with recovery protection  
A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140)....
7605440 Pixel cell isolation of charge storage and floating diffusion regions using doped wells  
A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one...
7595516 Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal  
An optoelectronic circuit includes a resonant cavity formed on a substrate and into which is injected an input digital optical signal that encodes bits of information (each bit representing an OFF...
7592654 Reduced crosstalk CMOS image sensors  
CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate,...
7554130 Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region  
An integrated circuit having memory, including thyristor-based memory cells, is described, where each of the thyristor-based memory cells includes a thyristor-based storage element and an access...
7554170 Variably responsive photosensor  
A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A...
7531850 Semiconductor device including a memory cell with a negative differential resistance (NDR) device  
A semiconductor device may include at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto. The NDR device may include a superlattice...
7525131 Photoelectric surface and photodetector  
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III...
7495265 ESD protection circuit with SCR structure for semiconductor device  
An ESD protection structure has: a first P-type semiconductor region connected to a pad; a first N-type semiconductor region coupled with the first P-type semiconductor region; a second P-type...
7492988 Ultra-compact planar AWG circuits and systems  
Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
7397066 Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers  
Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate,...
7385230 Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit  
A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped...
7378687 Photothyristor device, bidirectional photothyristor device and electronic apparatus  
In order to provide a photothyristor having high breakdown voltage and less-varying light sensitivity by improving the sensitivity and the breakdown voltage of the device while maintaining the...
7339203 Thyristor and method of manufacture  
A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the...
7317203 Method and monitor structure for detecting and locating IC wiring defects  
A 3-dimensional PCM structure and method for using the same for carrying out 3-dimensional integrated circuit wiring electrical testing and failure analysis in an integrated circuit manufacturing...
7259407 Isolated HF-control SCR switch  
A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via...
7214971 Semiconductor light-receiving device  
A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a...
7193322 Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices  
A strained-silicon (Si) channel CMOS device shallow trench isolation (STI) oxide region, and method for forming same have been provided. The method forms a Si substrate with a relaxed-SiGe layer...
7057214 Light-activated semiconductor switches  
Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a...
7002829 Apparatus and method for programming a one-time programmable memory device  
A method and apparatus for opening a fuse formed on a semiconductor substrate. The apparatus comprises a thyristor formed from CMOS device regions and having a one or two control terminals for...
6919583 End surface light-emitting element having increased external light emission efficiency and self-scanning light-emitting element array using the same  
An edge-emitting thyristor having an improved external luminous efficiency and a self-scanning light-emitting device array comprising the edge-emitting thyristor are disclosed. To improve the...
6818927 Sensitive high bidirectional static switch  
A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical...
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