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8168965 |
Semiconductor device and method using nanotube contacts
A semiconductor device includes at least one semiconductor layer, a metal layer in electrical contact with the semiconductor layer, and a carbon nanotube contact layer interposed between the metal...
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8129710 |
Plasmon enhanced nanowire light emitting diode
A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding...
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8120139 |
Void isolated III-nitride device
Isolation of III-nitride devices may be performed with a dopant selective etch that provides a smooth profile with little crystal damage in comparison to previously used isolation techniques. The...
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8084764 |
Semiconductor light emitting device and nitride semiconductor light emitting device
The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer...
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8030638 |
Quasi single crystal nitride semiconductor layer grown over polycrystalline SiC substrate
A compound semiconductor device is manufactured by using a polycrystalline SiC substrate, the compound semiconductor device having a buffer layer being formed on the substrate and having a high...
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8017176 |
Robust activation method for negative electron affinity photocathodes
A method by which photocathodes(201), single crystal, amorphous, or otherwise ordered, can be surface modified to a robust state of lowered and in best cases negative, electron affinity has been...
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7982208 |
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using...
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7973303 |
Nitride semiconductor device
A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a...
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7973325 |
Reflective electrode and compound semiconductor light emitting device including the same
Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type...
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7968865 |
Boron aluminum nitride diamond heterostructure
A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between...
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7968909 |
Reconditioned substrates for fabricating compound material wafers
Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite...
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7968864 |
Group-III nitride light-emitting device
A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well...
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7943924 |
Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices
Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A...
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7943964 |
AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same
An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of...
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7935955 |
Group III nitride semiconductor multilayer structure
An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure...
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7935615 |
III-V nitride semiconductor substrate and its production method
A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm ...
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7915640 |
Heterojunction semiconductor device and method of manufacturing
A metamorphic buffer layer is formed on a semi-insulating substrate by an epitaxial growth method, a collector layer, a base layer, an emitter layer and an emitter cap layer are sequentially...
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7902561 |
Nitride semiconductor light emitting device
The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an...
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7902737 |
Light emission device with enhanced image luminance and display having the same
A light emission device and a display having the light emission device are provided. The light emission device includes first and second substrates arranged opposite to each other, an electron...
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7812427 |
Soft switching semiconductor component with high robustness and low switching losses
A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by...
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7800097 |
Semiconductor device including independent active layers and method for fabricating the same
A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced...
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7795608 |
Photocathode
When to-be-detected light is made incident from a support substrate 2 side of a photocathode E1, a light absorbing layer 3 absorbs this to-be-detected light and produces photoelectrons. However,...
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7781777 |
Pn junction type group III nitride semiconductor light-emitting device
A pn junction type Group III nitride semiconductor light-emitting device 10 (11) of the present invention has a light-emitting layer 2 of multiple quantum well structure in which well layers 22 and...
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7741654 |
Group III nitride semiconductor optical device
The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding...
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7737429 |
Nitride based semiconductor device using nanorods and process for preparing the same
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in...
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7714316 |
Method of manufacturing semiconductor device, acid etching resistance material and copolymer
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom...
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7649173 |
Method of preparing a sample for transmission electron microscopy
A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device;...
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7595498 |
Electromagnetic wave generation apparatus and manufacturing method of electromagnetic wave generation apparatus
The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a...
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7576351 |
Nitride semiconductor light generating device
A nitride semiconductor light generating device comprises an n-type gallium nitride based semiconductor layer, a quantum well active layer including an InX1AlY1Ga1-X1-Y1N (1>X1>0, 1>Y1>0) well...
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7547908 |
III-nitride light emitting devices grown on templates to reduce strain
In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting...
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7531826 |
Photocathode structure and operation
A novel photocathode employing a rectifying junction is described that permits color imaging extending applications for photocathodes in a variety of instruments and night vision devices.
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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7518163 |
Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
A gallium nitride-based compound semiconductor light-emitting device is disclosed which includes an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting...
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7492988 |
Ultra-compact planar AWG circuits and systems
Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
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7485950 |
Impact ionization amplification apparatus method and system
An input signal comprising electronic carriers is injected into an impact ionization device with a high electric field whereupon the electronic carriers are accelerated toward an electron collector...
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7459718 |
Field effect transistor
A FET includes a nitride semiconductor in which leak current is reduced and breakdown voltage is improved. The FET is formed from a substrate, a buffer layer made of a nitride semiconductor, a...
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7432521 |
Logical operation element field emission emitter and logical operation circuit
A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration. A logical operation circuit has a construction wherein, in a...
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7420261 |
Bulk nitride mono-crystal including substrate for epitaxy
The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal...
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7399692 |
III-nitride semiconductor fabrication
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
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7378680 |
Migration enhanced epitaxy fabrication of quantum wells
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced...
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7365356 |
Photocathode
The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the...
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7279697 |
Field effect transistor with enhanced insulator structure
A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material...
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7271404 |
Group III-V nitride-based semiconductor substrate and method of making same
A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a...
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7268361 |
Electron emission device
The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type...
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7259406 |
Semiconductor optical element
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant...
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7244959 |
Detection of electromagnetic radiation using micromechanical multiple quantum wells structures
An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well...
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7230285 |
Semiconductor device and hetero-junction bipolar transistor
In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base...
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7227172 |
Group-III-element nitride crystal semiconductor device
In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by...
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7227173 |
Semiconductor devices and methods
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device;...
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7202511 |
Near-infrared visible light photon counter
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral r...
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