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8178864 |
Asymmetric barrier diode
A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and...
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8174051 |
III-nitride power device
A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device.
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8138521 |
Thyristor semiconductor device and switching method thereof
The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first semiconductor region 20 is formed on...
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8089095 |
Two terminal multi-channel ESD device and method therefor
In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical...
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8084783 |
GaN-based device cascoded with an integrated FET/Schottky diode device
A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally...
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8053807 |
Semiconductor packages, stacked semiconductor packages, and methods of manufacturing the semiconductor packages and the stacked semiconductor packages
A semiconductor package may include a semiconductor pattern, a bonding pad, and a polymer insulation member. The semiconductor pattern may include a semiconductor device and first hole. The bonding...
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8030110 |
Nitride semiconductor light-emitting device and method for fabrication thereof
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a...
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7989841 |
Fast injection optical switch
A fast injection optical switch is disclosed. The optical switch includes a thyristor having a plurality of layers including an outer doped layer and a switching layer. An area of the thyristor is...
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7982239 |
Power switching transistors
In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source,...
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7960754 |
Diode having high breakdown voltage and low on-resistance
A Schottky or PN diode is formed where a first cathode portion is an N epitaxial layer that is relatively lightly doped. An N+ buried layer is formed beneath the cathode for conducting the cathode...
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7943928 |
ESD protection structures for semiconductor components
An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is...
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7915637 |
Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined...
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7902626 |
Semiconductor device and method for its manufacture
In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and...
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7888701 |
Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor
An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type...
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7868352 |
Silicon break over diode
A Break Over Diode (“BOD”) device is a gate-less two terminal high power semiconductor switch in which transitions from a blocking state to a conducting state are triggered by a dV/dt pulse to the...
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7864560 |
Nano-electronic array
A nano device includes an array of cells disposed in rows and columns and constructed over a substrate, and an optical circuit disposed over the substrate, wherein the optical circuit is formed by...
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7847315 |
High efficiency rectifier
A high-efficiency power semiconductor rectifier device (10) comprising a δP++ layer (12), a P-body (14), an N-drift region (16), an N+ substrate (18), an anode (20), and a cathode (22). The method ...
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7816662 |
RF nanoswitch
An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the...
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7812367 |
Two terminal low capacitance multi-channel ESD device
In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.
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7786504 |
Bidirectional PNPN silicon-controlled rectifier
The present invention discloses a bidirectional PNPN silicon-controlled rectifier comprising: a p-type substrate; a N-type epitaxial layer; a P-type well and two N-type wells all formed inside the...
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7737465 |
Semiconductor apparatus and manufacturing method thereof
The present invention provides a semiconductor apparatus for improving a switching speed and a withstand voltage, and a manufacturing method of the semiconductor apparatus. The semiconductor...
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7696528 |
Thyristor which can be triggered electrically and by radiation
A thyristor has a radiation-sensitive breakdown structure (20), a gate electrode (92) that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at...
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7679103 |
Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor
An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type...
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7638790 |
RF nanoswitch
An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the...
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7622752 |
Schottky diode with a vertical barrier
A Schottky diode with a vertical barrier extending perpendicularly to the surface of a semiconductor chip having a vertical central metal conductor in contact on the one hand with the substrate of...
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7608867 |
Vertical IMOS transistor having a PIN diode formed within
A vertical IMOS-type transistor including: a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion,...
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7538362 |
Lateral semiconductor diode and method for fabricating it
The invention relates to a lateral semiconductor diode, in which contact metal fillings (6, 7), which run in trenches (3, 4) in particular in a silicon carbide body (1, 2), are interdigitated at a...
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7538412 |
Semiconductor device with a field stop zone
A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side...
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7511297 |
Phase change memory device and method of fabricating the same
A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A...
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7498617 |
III-nitride integrated schottky and power device
A III-nitride power device that includes a Schottky electrode integrated with a power switch. The combination is used in power supply circuits such as a boost converter circuit.
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7417265 |
Schottky diode structure with enhanced breakdown voltage and method of manufacture
In one embodiment, a Schottky diode structure comprises a Schottky barrier layer in contact with a semiconductor material through a Schottky contact opening. A conductive ring is formed adjacent...
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7368760 |
Low parasitic capacitance Schottky diode
A low parasitic capacitance Schottky diode including a lightly doped polycrystalline silicon island that is formed on a shallow trench isolation (STI) pad such that the polycrystalline silicon...
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7330369 |
NANO-electronic memory array
Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the...
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7321138 |
Planar diac
The invention concerns an asymmetric diac comprising a highly-doped substrate (21) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity on the...
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7309905 |
Bipolar-based SCR for electrostatic discharge protection
A system and method is disclosed for implementing a new bipolar-based silicon controlled rectifier (SCR) circuit for an electrostatic discharge (ESD) protection. The SCR circuit comprises a bipolar...
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7279726 |
ESD protection device
An ESD protection device for protecting a circuit against electrostatic discharges. The ESD protection device having a series circuit of N diodes, each diode comprising an anode and a cathode. The...
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7260939 |
Thermal transfer device and system and method incorporating same
A method of manufacturing a thermal transfer device including providing first and second thermally conductive substrates that are substantially atomically flat, providing a patterned electrical...
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7190006 |
Symmetrical planar diac
The invention concerns at disc comprising a highly-doped substrate (20) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity including in the...
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7135717 |
Semiconductor switches and switching circuits for microwave
The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60...
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7071498 |
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in...
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7034385 |
Topless semiconductor package
A semiconductor package which includes a die pad that is exposed through the top surface of its molded housing, a semiconductor die having one power electrode electrically and mechanically...
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7002187 |
Integrated schottky diode using buried power buss structure and method for making same
An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an...
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6956249 |
Termination of semiconductor components
The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b,...
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6940104 |
Cascaded diode structure with deep N-well and method for making the same
A cascaded diode structure with a deep N-well for effectively reducing the leakage current of the P-type substrate by floating the base of a parasitic transistor in the cascaded diode structure....
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6936850 |
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material
The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically...
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6933540 |
ESD protection apparatus and method for dual-polarity input pad
An ESD protection apparatus for dual-polarity input pad comprises a triple-well formed with a first, second and third regions to form an SCR structure. A first and second ground connection regions...
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6894318 |
Diode having a double implanted guard ring
The present invention provides a diode 200 that includes a substrate 215 doped with a first type dopant and a double implanted guard ring 245 located within the substrate and doped with a second...
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6891205 |
Stability in thyristor-based memory device
A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one...
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6885077 |
Schottky diode
A Schottky diode has a Schottky junction formed by a thin metal layer and/or metal silicide layer at the top side of a doped well in a semiconductor body or substrate. In contrast to the...
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6870202 |
Surge protection semiconductor device
A pnpn thyristor element Thy1 and six pn diode elements D1, D2, D3, D4, D5, and D6 are formed in a semiconductor substrate of a first conductivity type, and separated into six regions by a...
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