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9026063 Complementary metal-oxide semiconductor direct current to direct current converter  
Disclosed embodiments include a direct current to direct current (DC-DC) converter including one or more charge pumps and configured to receive an input voltage and a first clock signal and a...
9018623 Array substrate, display panel having the same and method of manufacturing the array substrate  
An array substrate includes a thin film transistor which includes a gate electrode electrically connected to a gate line, a source electrode electrically connected to a data line, a drain...
8981473 Dielectric isolation substrate and semiconductor device  
According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first...
8952418 Gated bipolar junction transistors  
Some embodiments include gated bipolar junction transistors. The transistors may include a base region between a collector region and an emitter region; with a B-C junction being at an interface...
8946766 Bi-directional silicon controlled rectifier structure  
Bi-directional silicon controlled rectifier device structures and design structures, as well as fabrication methods for bi-directional silicon controlled rectifier device structures. A well of a...
8928029 Single-band and dual-band infrared detectors  
Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the...
8928084 ESD protection device and method of forming an ESD protection device  
An ESD protection device, which is arranged to be active at a triggering voltage (Vt1) for providing ESD protection, comprises a first region of the first conductivity type formed in a...
8907372 Thyristor and method for the same  
A thyristor includes a base region, a pair of first doping regions, at least one second doping region, at least one third doping region, and a pair of metal layers. The first doping regions are...
8895390 Memory device with a textured lowered electrode  
Embodiments of the invention generally relate to memory devices and methods for manufacturing such memory devices. In one embodiment, a method for forming a memory device with a textured electrode...
8890259 SCR apparatus and method for adjusting the sustaining voltage  
An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N...
8878236 High voltage breakover diode having comparable forward breakover and reverse breakdown voltages  
In a first embodiment, an ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than...
8878235 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same  
In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled...
8878237 Active edge structures providing uniform current flow in insulated gate turn-off thyristors  
An insulated gate turn-off thyristor, formed as a die, has a layered structure including a p+ layer (e.g., a substrate), an n− layer, a p-well, vertical insulated gate regions formed in the...
8866125 Integration of LED driver circuit with LED  
Various embodiments provide materials and methods for integrating exemplary heterostructure field-effect transistor (HFET) driver circuit or thyristor driver circuit with LED structures to reduce...
8860039 Semiconductor device  
A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate;...
8847220 Semiconductor device  
A semiconductor device including an oxide semiconductor can have stable electric characteristics and high reliability. A transistor in which an oxide semiconductor layer containing indium,...
8841696 High-trigger current SCR  
An SCR includes a first doped region of a first type having a first doping concentration. A first well of the first type and a first well of a second type are disposed in upper areas of the first...
8835974 Driving device, print head and image forming device  
A driving device that drives a light emitting thyristor array includes: a first driving circuit operated by a second power source; a scanning circuit including plural stages of scanning thyristors...
8835977 TVS with low capacitance and forward voltage drop with depleted SCR as steering diode  
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate of a first conductivity type. The TVS includes a buried dopant region of a second conductivity type disposed and...
8835975 Ultra-fast breakover diode  
In a first embodiment, an ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than...
8823053 Semiconductor device including a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency  
The semiconductor device includes a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency. Any of the first flat plates is disposed above...
8815654 Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devices  
A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or...
8809904 Electronic device structure with a semiconductor ledge layer for surface passivation  
Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a...
8809902 Power semiconductor diode, IGBT, and method for manufacturing thereof  
A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a...
8785972 Semiconductor electrostatic protection circuit device  
An electrostatic protection circuit in a semiconductor device includes a first first-conductivity type well extending in a first direction over a semiconductor substrate, a second...
8779464 Starting structure and protection component comprising such a starting structure  
A structure for starting a semiconductor component including a porous silicon layer in the upper surface of a semiconductor substrate. This porous silicon layer is contacted, on its upper surface...
8772880 Semiconductor integrated circuit device  
A high-speed semiconductor integrated circuit device is achieved by adjusting an offset voltage. For example, dummy NMOS transistors MND1 (MND1a and MND1b) and MND2 (MND2a and MND2b) are connected...
8766232 Semiconductor memory devices having variable resistor and methods of fabricating the same  
According to a method of fabricating the semiconductor memory device, a contact plug can be protected while mold openings are formed. A semiconductor memory device may include a mold dielectric...
8748934 Vertical selection transistor, memory cell, and three-dimensional memory array structure and method for fabricating the same  
The present disclosure discloses a vertical selection transistor, a memory cell having the vertical selection transistor, a three-dimensional memory array structure and a method for fabricating...
8742456 Integrating a trench-gated thyristor with a trench-gated rectifier  
An integrated trench-MOS-controlled-thyristor plus trench gated diode combination, in which the trenches are preferably formed at the same time. A backside polarity reversal process permits a...
8742450 III-nitride multi-channel heterojunction device  
A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
8704269 Die package  
According to one embodiment, a die package is provided comprising a first die structure with a first plurality of switching elements wherein controlled current input terminals of the first...
8685800 Single event latch-up prevention techniques for a semiconductor device  
A technique for addressing single-event latch-up (SEL) in a semiconductor device includes determining a location of a parasitic silicon-controlled rectifier (SCR) in an integrated circuit design...
8674400 Stress enhanced junction engineering for latchup SCR  
A latchup silicon controlled rectifier (SCR) includes a p+ region and an n+ region located in a p-well of the latchup SCR; and a p+ region and an n+ region located in a n-well of the latchup SCR,...
8664728 Power transistor with protected channel  
A transistor includes a substrate, a well formed in the substrate, a drain including a first impurity region implanted in the well, a source including a second impurity region implanted in the...
8664690 Bi-directional triode thyristor for high voltage electrostatic discharge protection  
A bi-directional triode thyristor (TRIAC) device for high voltage electrostatic discharge (ESD) protection may include a substrate, an N+ doped buried layer, an N-type well region and two P-type...
8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure  
A high-voltage-resistant semiconductor component (1) has vertically conductive semiconductor areas (17) and a trench structure (5). These vertically conductive semiconductor areas are formed from...
8610237 Semiconductor apparatus  
A semiconductor apparatus includes a semiconductor chip, a lead frame that has a first surface having the semiconductor chip mounted thereover and a second surface opposite to the first surface, a...
8575695 Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode  
This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate....
8535992 Thyristor random access memory device and method  
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce...
8530949 Semiconductor device with common contact coupling gate wiring integrated with gate electrode of antifuse to diffusion layer  
An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation...
8476672 Electrostatic discharge protection device and method for fabricating the same  
The present invention provides an ESD protection device comprising a SCR structure that is a transverse PNPN structure formed by performing a P-type implantation and an N-type implantation in an...
8456155 Radio-frequency power amplifier  
A power amplifier includes: an input matching circuit including an inductor, the input matching circuit receiving an input signal and matching input impedances with each other; an amplifier...
8441030 III-nitride multi-channel heterojunction interdigitated rectifier  
A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
8420454 Three-terminal power device with high switching speed and manufacturing process  
An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a...
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings  
Provided is a semiconductor device including a substrate, and a first wiring layer, a second wiring layer, and a switch via formed on the substrate. The first wiring layer has first wiring formed...
8390068 Electrostatic discharge protection device and method of fabricating same  
A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body...
8378382 High aspect-ratio PN-junction and method for manufacturing the same  
A semiconductor device having high-aspect-ratio PN-junctions is provided. The semiconductor device includes a conducting layer. The semiconductor device further includes a plurality of first doped...
8377754 Stress enhanced junction engineering for latchup SCR  
A method of forming an IC device including a latchup silicon controlled rectifier (SCR) includes forming a mask on a top surface of a substrate, wherein the mask covers a first portion of the...
8324656 Reduction of electrostatic coupling for a thyristor-based memory cell  
Embodiments of integrated circuits for mitigating against electrostatic coupling are described. In an embodiment, first gate dielectrics are respectively located over first active regions. First...

Matches 1 - 50 out of 322 1 2 3 4 5 6 7 >