Matches 251 - 300 out of 322 < 1 2 3 4 5 6 7 >


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5777346 Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench  
One embodiment of a metal oxide semiconductor controlled thyristor in accordance with the present invention has a semiconductor wafer with opposing first and second surfaces. The wafer includes...
5705835 Semiconductor device and method of manufacturing the same  
A second region 3 is formed via a buffer layer 3a on a first region 2 formed with an anode electrode 1 on the rear and a third region 4 like a well is formed on the surface of the second region 3....
5637886 Thyristor with improved dv/dt resistance  
When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I10 to I30) which are responsive to junction capacitances (C10 to C30) of...
5635729 Hydrogen-activated thin film switching device  
A description is given of a switching device (1) comprising a transparent substrate (3), a reflective switching film (5) of yttrium having a thickness of 500 nm and a palladium layer (7) having a...
5600160 Multichannel field effect device  
A dual channel field-effect switching device is disclosed. The switching device includes two adjacent semiconductor regions of opposite polarity forming a PN junction therebetween. A gate...
5514882 Bistable four layer device memory cell and method for storing and retrieving binary information  
A new static memory cell based on the bistable operation of a three-terminal four layer semiconductor device working in the forward blocking state is disclosed. The power consumption of the memory...
5502317 Silicon controlled rectifier and method for forming the same  
A semiconductor controlled rectifier is disclosed herein. In a preferred embodiment, a first n-doped region 112 is formed in a p-doped semiconductor layer 126. A first n-well region 122 is formed...
5453384 Method of making a silicon controlled rectifier device for electrostatic discharge protection  
A first silicon controlled rectifier structure (220) is provided for electrostatic discharge protection, comprising a lightly doped semiconductor layer (222) having a first conductivity type and a...
5401984 Semiconductor component for transient voltage limiting  
A semiconductor component for limiting transient voltages on the signal or other supply lines of a system, includes, in a common semiconductor body, a plurality of multi-junction diodes connected...
5379089 Flash control device using cascade-connected thyristor and MOSFET  
The semiconductor device is composed of a thyristor and a MOSFET cascade-connected. The thyristor includes a bipolar transistor cascade-connected with the MOSFET, the base (p-- semiconductor...
5369291 Voltage controlled thyristor  
A voltage controlled thyristor includes an intrinsic layer of material between an anode and a cathode and a gate region between the intrinsic layer and the cathode comprising a lightly doped P...
5359210 Integrated circuit  
An integrated circuit including a first device having respective input and output electrodes at opposed first and second faces of a semiconductor block in which the device is formed, and a second...
5357125 Power switching semiconductor device including SI thyristor and MOSFET connected in cascade  
A semiconductor device including a normally-on SI thyristor, and a MOSFET connected in cascade with the SI thyristor. The gate of the SI thyristor is connected to the source of the MOSFET. This...
5243205 Semiconductor device with overvoltage protective function  
In a photothyristor, a main thyristor consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed on a semiconductor substrate. Also a pilot thyristor...
5027180 Double gate static induction thyristor  
A double gate static induction thyristor comprises a semiconductor substrate, a first gate region formed at a first principal surface of the substrate, and a first semiconductor region of a first...
4952990 Gate turn-off power semiconductor component  
In a gate turn-off power semiconductor component in the form of a field-controlled thyristor (FCTh) with (14) separated from each other by trenches (10), means of control which make possible a...
4807008 Static memory cell using a heterostructure complementary transistor switch  
A heterostructure complementary transistor switch (HCTS) is fabricated using epitaxial layers on a substrate to form the desired P-N-P-N (or N-P-N-P) complementary structure in III-V compound...
4800415 Bipolar inversion channel device  
A new solid state field effect bipolar device provides for high current gain and low input capacitance, while avoiding the "punch-through" effects that limit the downward scaling of conventional...
4728371 Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation  
A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si30 (n,γ) Si31 β- P31 includes the steps of covering...
4675719 Thyristor device  
A thyristor device where the thyristor and protection device are formed flat with two surfaces thereof operating as a electrodes, and the conductive plate which electrically connects these...
4658282 Semiconductor apparatus  
A semiconductor junction related structure to control sensitivity of signal processing systems to signals of greater versus smaller values.
4651191 Semiconductor device and fabrication method thereof  
Disclosed is a semiconductor device constructed such that among elements forming a brazing material for bonding an electrode on a semiconductor substrate to an external electrode, the amounts of...
4520552 Semiconductor device with deep grip accessible via the surface and process for manufacturing same  
A semiconductor device with deep grid accessible via the surface having a silicon substrate and comprising U-shaped grooves. The upper parts of the side walls of these grooves are insulated by a...
4449140 Semi-conductor barrier switching devices  
Two and three terminal semi-conductor barrier switching devices are disclosed in which a semi-conductor junction or a Schottky barrier is used to inject carriers towards a barrier formed by a...
4441115 Thyristor having a center pn junction formed by plastic deformation of the crystal lattice  
A thyristor comprises two semiconductor plates, discs or chips, one n-doped and one p-doped, each having a structure of parallel ridges on one major surface and an opposite conducting type layer...
4353754 Thermo-sensitive switching element manufacturing method  
A thermo-sensitive semiconductor element having a four-layer pnpn structure. A defect layer is formed at the junction of the p base layer and the n base layer by implantation of argon ions to...
4210466 Process for preparing heat sensitive semiconductor switch  
A process for preparing heat sensitive semiconductor switch which switches from OFF state to ON state at relatively low temperature.In a heat sensitive thyristor having PNPN four layer structure,...
4178630 Fluid-cooled thyristor valve  
A fluid-cooled thyristor valve including a plurality of series-connected thyristors that are cooled by non-conducting fluid flowing through electrically conducting cooling bodies positioned at the...
4151011 Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure  
A planar pnpn thyristor structure is prepared to include an SiO2 film with a thickness of about 10,000A wholly disposed on its main face to which pn junctions are exposed. That portion of the SiO2...
4021269 Post diffusion after temperature gradient zone melting  
Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a...
4009485 Semiconductor pellet assembly mounted on ceramic substrate  
Disclosed is an isolated semiconductor assembly with a pellet mounting plate having a beveled periphery and surmounted by a semiconductor pellet. A ribbon-shaped lead overhangs the edge of the top...
3988766 Multiple P-N junction formation with an alloy droplet  
A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting...
3940783 Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure  
A majority charge carrier semiconductor structure including a relatively heavily doped n type support layer, a second n type layer formed on the support layer and having a relatively light doping,...
3786425 INTEGRATED CIRCUIT SWITCHING NETWORK PROVIDING CROSSPOINT GAIN  
An integrated circuit thyristor switching network in which a parasitic pnp transistor effect, normally encountered as a result of the junction isolation employed, provides a crosspoint gain rather...
3729719 STORED CHARGE STORAGE CELL USING A NON LATCHING SCR TYPE DEVICE  
This specification discloses a stored charge storage cell for monolithic memories. The cell comprises a device akin to a silicon-controlled rectifier and can be schematically illustrated as an NPN...
3697827 STRUCTURE AND FORMATION OF SEMICONDUCTORS WITH TRANSVERSE CONDUCTIVITY GRADIENTS  
An electrical semiconductor device in which the impurity concentration of a conduction region of independently controlled depth is graded in a direction parallel to an associated junction to...
3656540 METHOD OF AND SYSTEM FOR DISSIPATING THE HEAT GENERATED BY ELECTRONIC CONTROL DEVICES IN CRYOGENIC INSTALLATIONS  
A method of and a system for dissipating the heat produced by electronic components, especially motor-control thyristors (silicon-controlled rectifiers) used in motor-control circuits in cryogenic...
3633046 PARALLEL THYRISTORS SWITCHING MATRICES  
Disclosed are solid-state switching matrices adapted to be serially connected to other such matrices to form an electric valve of a converter system. Each matrix comprises a plurality of...
3588632 STRUCTURALLY REINFORCED SEMICONDUCTOR DEVICE  
3821774 ELECTROLUMINESCENT SEMICONDUCTOR DEVICES  
3454434 MULTILAYER SEMICONDUCTOR DEVICE  
3416009 Static circuit breaker having a semiconductor component  
3404327 Conversion systems comprising scr's with gate control arrangements  
3341821 Adaptive semiconductor device  
3313952 Phase sensitive switching element  
3283171 Semiconductor switching device and circuit  
3275906 Multiple hetero-layer composite semiconductor device  
3274400 Temperature compensated silicon controlled rectifier  
3257624 Frequency divider employing semiconductor devices  
3238384 Two terminal triggering circuit comprising complementary transistors with one transistor having emitter operating as collector  

Matches 251 - 300 out of 322 < 1 2 3 4 5 6 7 >