Matches 201 - 250 out of 322 < 1 2 3 4 5 6 7 >


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6759691 ESD protection circuit having a high triggering threshold  
An ESD protection circuit having a high triggering threshold. The ESD protection circuit comprises a semiconductor-controlled rectifier (SCR) and a bipolar-junction-transistor (BJT). The SCR...
6759692 Gate driver with level shift circuit  
A gate driver includes a gate control signal generator having a first input and configured to output a gate control signal to a power semiconductor switch and a first sub-circuit having a first...
6734462 Silicon carbide power devices having increased voltage blocking capabilities  
A structure and method for a voltage blocking device comprises a cathode region, a drift region positioned on the cathode region, a gate region positioned on the drift region, an anode region...
6727525 Diode comprising a metal semiconductor contact and a method for the production thereof  
A diode includes a semiconductor substrate that is arranged between two metallic electrodes, having a strongly doped first zone that forms an ohmic transition to the first electrode, a weakly...
6727526 Thyristor with recovery time voltage surge resistance  
A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the...
6717182 Edge-emitting light-emitting device having improved external luminous efficiency and self-scanning light-emitting device array comprising the same  
A self-scanning light-emitting element array using an end face light-emitting thyristor having improved external emission efficiency is provided. To improve the external emission efficiency of the...
6703646 Thyristor with lightly-doped emitter  
A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter...
6686631 Negative differential resistance (NDR) device and method of operating same  
An n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits negative differential resistance in its output characteristic (drain current as a function of drain...
6683328 Power semiconductor and fabrication method  
A power semiconductor containing an anode disposed on either a top side or a bottom side is described. A cathode is disposed on the side that is unoccupied by the anode, and edge terminations are...
6664601 Method of orperating a dual mode FET & logic circuit having negative differential resistance mode  
A process for operating a dual mode FET and a logic circuit to include a negative differential resistance (NDR) characteristic is disclosed. In a FET embodiment, an NDR characteristic is...
6657239 Power-switching semiconductor device  
In order to reduce a turn-on time of a power switching semiconductor device at a low cost, a first main electrode divided into a plurality of segments forming segment rows of a multi-concentric...
6639252 Integrated circuit and method for fabricating an integrated circuit  
An integrated circuit includes a first circuit section and a second circuit section, which is necessary or useful for the emulation of the first circuit section. Such an integrated circuit...
6614055 Surface light-emitting element and self-scanning type light-emitting device  
A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve...
6608713 Optical switching device  
A description is given of a switching device (1) comprising a transparent substrate (3), a switching film (5) comprising a hydride of scandium and magnesium, covered with a palladium layer (7). By...
6603153 Fast recovery diode and method for its manufacture  
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer...
6593600 Responsive bidirectional static switch  
A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical...
6590261 Electrostatic discharge protection structure  
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot...
6583452 Thyristor-based device having extended capacitive coupling  
A thyristor-based semiconductor device has a thyristor that exhibits increased capacitive coupling between a conductive structure and a portion of a thyristor. According to an example embodiment...
6583496 Single-control monolithic component for a composite bridge  
A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an...
6576934 Embedded SCR protection device for output and input pad  
An embedded SCR in conjunction with a Gated-NMOS is created for protecting a chip input or output pad from ESD, by inserting a p+ diffusion and the n-well in the drain side and a part of the drain...
6552370 Network of triacs with gates referenced with respect to a common opposite face electrode  
The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor...
6521918 Semiconductor device and driving method thereof  
To make it possible to control turn-off operation even after switch over to transistor operation after commutation of the main current from cathode electrode to gate electrode in turn-off...
6512274 CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same  
An n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits negative differential resistance in its output characteristic (drain current as a function of drain...
6423985 SCR compact structure  
A compact SCR structure is provided, having an N-type semiconductor layer, a P-type semiconductor layer in contact with the N-type semiconductor layer, an anode doped region, a cathode doped...
6423987 Self-protect thyristor  
With a self-protect thyristor, having a MOSFET (M1) that is connected in series with the thyristor and a second, self-controlled MOSFET (M2) between the p-base of the thyristor and the external...
6410353 Contact chain for testing and its relevantly debugging method  
The present invention provides a structure of a contact chain comprising a substrate of a first conductive type, a dielectric layer on the substrate, a plurality of contact structures and two...
6407412 MOS varactor structure with engineered voltage control range  
The present invention relates to a metal oxide semiconductor (MOS) varactor that takes advantage of the beneficial characteristics of MOS varactors to provide a high maximum to minimum capacitance...
6396084 Structure of semiconductor rectifier  
A semiconductor rectifier includes a substrate of a first conductivity type; a current path layer of the first conductivity type formed near the surface of the substrate; a current block layer of...
6380569 High power unipolar FET switch  
A high power unipolar FET switch has an N− drift layer; a layer of metal contacts the drift layer via an ohmic contact to provide a drain connection for the FET. Each switch cell has a pair of...
6380565 Bidirectional switch with increased switching breakdown voltage  
A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear...
6362112 Single step etched moat  
A single step etched moat (24), having a regular grid work mask (28) of mesa shields (42) and edge termination shields (44), is utilized to form, in a single etching step, semiconductor devices...
6316794 Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region  
A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and...
6303961 Complementary semiconductor devices  
A metal-oxide semiconductor device having an enhanced compatibility for use as a complementary device comprises an additional lateral well region interposed between the source and drain region of...
6274910 ESD protection circuit for SOI technology  
An ESD protection circuit is fabricated on a semiconductor block on an insulating layer overlying a supporting substrate. The ESD protection circuit comprises a first N-type doped region, a first...
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior  
Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within...
6259123 High voltage power MOS device  
A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the...
6255672 Semiconductor device  
A semiconductor device includes a pair of semiconductor switching elements and a board. Each semiconductor switching element has positive and control electrodes formed on one surface and a...
6242763 Low triggering voltage SOI silicon-control-rectifier (SCR) structure  
A low triggering voltage PD-SOI (Partially-Depleted Silicon-on-Insulator) electrostatic discharge (ESD) protection structure is disclosed. In one embodiment, the protection structure includes: A...
6144045 High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures  
High power thyristor-type devices comprising a first layer of p-type doped semiconductor alloy aluminum gallium nitride, a second layer of n-type doped aluminum gallium nitride with lower aluminum...
RE36770 MOS-controlled high-power thyristor  
This thyristor comprises a main current-carrying portion in the form of a semiconductor body having four layers, with contiguous layers being of different P and N conductivity types and with three...
6084253 Low voltage four-layer device with offset buried region  
A four-layer low voltage thyristor device (30) in which the breakover voltage is independent of the holding current. Rather than forming a buried region (38) underlying the emitter region (42),...
6072200 Gate unit for a hard-driven GTO  
In a gate unit (47) for a hard-driven GTO (10), at least some of the electronic components (37, . . , 42) needed for driving are arranged on a printed circuit board (34). The printed circuit board...
6064100 Product for ROM components having a silicon controlled rectifier structure  
A manufacturing method and a structure for ROM component having a silicon controlled rectifier as the basic memory instead of a channel transistor in a conventional ROM, and using a formation of...
6043516 Semiconductor component with scattering centers within a lateral resistor region  
A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor...
5914502 Assembly of thyristors having a common cathode  
A monolithic assembly of thyristors having a common cathode and a single gate includes a lightly-doped substrate, several anode regions, on the front surface side, a cathode gate layer on the rear...
5910683 Power semiconductor module  
The invention relates to a power semiconductor module having at least one power semiconductor switch, a cooling system, control electronics and a relieving network. According to this invention,...
5895974 Durable substrate subassembly for transistor switch module  
A durable substrate subassembly for a high power transistor switching module. The substrate subassembly is durable because wire bonds to the semiconductor device electrodes are replaced with a...
5856683 MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element  
A MOS-gate switched power semiconductor component with a semiconductor body that has a number of unit cells arranged side-by-side and switched in parallel and consisting of a p-emitter zone...
5793063 High voltage, vertical-trench semiconductor device  
An optically-triggered silicon controlled rectifier (SCR) (21) having a number of semiconductor layers (23, 24, 31) diffused into an N type substrate (22). Specifically, the SCR is formed by...
5793126 Power control chip with circuitry that isolates switching elements and bond wires for testing  
An integrated circuit chip with multiple switching element segments that cooperatively provide high power switching is provided with circuitry for isolating each individual switching element...

Matches 201 - 250 out of 322 < 1 2 3 4 5 6 7 >